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Part : SGS5N150UFTU Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : SGS5N150UFTU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 900 Best Price : $2.90 Price Each : $3.57
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SGS5N150UF Datasheet

Part Manufacturer Description PDF Type
SGS5N150UF Fairchild Semiconductor IGBT Original
SGS5N150UF Fairchild Semiconductor Discrete, High Performance IGBT Original
SGS5N150UFTU Fairchild Semiconductor Discrete, High Performance IGBT Original
SGS5N150UFTU_NL Fairchild Semiconductor Discrete, High Performance IGBT Original

SGS5N150UF

Catalog Datasheet MFG & Type PDF Document Tags

SGS5N150UF

Abstract: 220F SGS5N150UF May 2001 IGBT SGS5N150UF General Description Fairchild's Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching , °C SGS5N150UF 1500 ± 20 10 5 20 50 20 -55 to +150 -55 to +150 300 Units V V A A A W W °C °C °C Notes : (1 , 2.5 62.5 Units ° C/ W ° C/ W ©2001 Fairchild Semiconductor Corporation SGS5N150UF Rev. A SGS5N150UF Electrical Characteristics of IGBT Symbol Parameter TC = 25°C unless otherwise noted
Fairchild Semiconductor
Original
220F
Abstract: SGS5N150UF General Description Features Fairchildâ'™s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power , °C @ TC = 100°C SGS5N150UF 1500 ± 20 10 5 20 50 20 -55 to +150 -55 to +150 Units V V , . - Max. 2.5 62.5 Units °C/W °C/W SGS5N150UF Rev. B SGS5N150UF IGBT Symbol , =10â"¦ VGE = 10V Inductive Load TC = 25°C VCE = 600 V, IC = 5A VGE = 10V SGS5N150UF Rev. B Fairchild Semiconductor
Original

SGS5N150UF

Abstract: SGS5N150UF General Description Features Fairchild's Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply , °C SGS5N150UF 1500 ± 20 10 5 20 50 20 -55 to +150 -55 to +150 Units V V A A A W W °C °C , Units °C/W °C/W SGS5N150UF Rev. B SGS5N150UF IGBT Symbol Parameter TC = 25°C unless , Load TC = 25°C VCE = 600 V, IC = 5A VGE = 10V SGS5N150UF Rev. B SGS5N150UF Electrical
Fairchild Semiconductor
Original

SGS5N150UF

Abstract: IGBT SGS5N150UF General Description Features Fairchild's Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power , = 100°C SGS5N150UF 1500 ± 20 10 5 20 50 20 -55 to +150 -55 to +150 Units V V A A , Max. 2.5 62.5 Units °C/W °C/W SGS5N150UF Rev. A SGS5N150UF May 2001 Symbol , Inductive Load TC = 25°C VCE = 600 V, IC = 5A VGE = 10V SGS5N150UF Rev. A SGS5N150UF Electrical
Fairchild Semiconductor
Original
Abstract: SGS5N150UF General Description Features Fairchildâ'™s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power , °C @ TC = 100°C SGS5N150UF 1500 ± 20 10 5 20 50 20 -55 to +150 -55 to +150 Units V V , . - Max. 2.5 62.5 Units °C/W °C/W SGS5N150UF Rev. B SGS5N150UF IGBT Symbol , =10â"¦ VGE = 10V Inductive Load TC = 25°C VCE = 600 V, IC = 5A VGE = 10V SGS5N150UF Rev. B Fairchild Semiconductor
Original

INDUCTION HEATING

Abstract: induction heating ic No Yes Induction Heating; Motor Control; Power Conversion SGS5N150UF 1500 5 4.7
Fairchild Semiconductor
Original
HGT1N30N60A4D SGF5N150UF INDUCTION HEATING induction heating ic high power Induction Heating HGT1S5N120BNDS HGT1S12N60C3S HGT1N40N60A4D HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD

RURU8060

Abstract: 3 phase motor control SGS13N60UF SGS13N60UFD SGS10N60RUF SGS10N60RUFD SGS23N60UF SGS23N60UFD SGS5N150UF TO-247 HGTG12N60B3
Fairchild Semiconductor
Original
FFPF60B150DS RURU8060 3 phase motor control FM2G75US60 smps welding machine 1N4004 SMA FGS15N40L HGTP3N60B3 HGTP3N60B3D SGP5N60RUF SGP5N60RUFD SGP13N60UF