SGR20N40L SGU20N40L - Datasheet Archive

 

N-CHANNEL IGBT SGR20N40L / SGU20N40L FEATURES D-PAK I-PAK * High Input Impedance * High Peak Current Capability (150A) * Easy

 

Preliminary N-CHANNEL IGBT SGR20N40L SGR20N40L / SGU20N40L SGU20N40L FEATURES D-PAK I-PAK * High Input Impedance * High Peak Current Capability (150A) * Easy Gate Drive APPLICATIONS C *Strobe Flash G E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics VCES Rating Units Collector-Emitter Voltage 450 V VGES Gate-Emitter Voltage »6 V ICM (1) Pulsed Collector Current 150 A PC Maximum Power Dissipation @Tc = 25 45 W Tj Operating Junction Temperature -55 ~ 150 Tstg Storage Temperature Range -55 ~ 150 TL Maximum Lead Temp. For Soldering Purposes, ÜÌfrom case for 5 seconds Notes: (1) Repetitive rating : Pulse width limited by max. junction temperature 300 Preliminary N-CHANNEL IGBT SGR20N40L SGR20N40L / SGU20N40L SGU20N40L ELECTRICAL CHARACTERISTICS (Tc=25 ,Unless Otherwise Specified) Symbol Characteristics Test Conditions Min BVCES C - E Breakdown Voltage VGE = 0V , IC = 1mA 450 - - V VGE(th) G - E threshold voltage IC =1mA , VCE = VGE 0.7 1.0 1.4 V ICES Collector cutoff Current VCE = VCES , VGE = 0V - - 10 uA IGES G - E leakage Current VGE = - - »0.1 uA VCE(sat) C - E Saturation voltage Ic=150A, VGE = 4.5V - - 8.0 V Cies Input capacitance VGE = 0V , f = 1 - 4800 - pF Coes Output capacitance VCE = 30V - 60 - pF Cres Reverse transfer capacitance - 35 - pF td(on) Turn on delay time VCC = 300V , IC = 150A - 0.3 - uS tr Turn on rise time VGE = 4.5V - 0.9 - uS td(off) Turn off delay time RG = 30 7* - 0.8 - uS tf Turn off fall time Resistive Load - 2.0 - uS »VGES , VCE = 0V M Typ Max Units Notes : Recommendation of RG Value : RG ÿ30 7 THERMAL RESISTANCE Symbol Characteristics Min Typ Max R.JC Junction-to-Case - - 3.0 R.JA Junction-to-Ambient (PCB Mount) - - 50 R.CS Junction-to-Ambient - - 110 Notes : Mounted on 1" squre PCB (FR4 or G-10 Material) Units /W /W /W Preliminary N-CHANNEL IGBT SGR20N40L SGR20N40L / SGU20N40L SGU20N40L 200 200 Tc = -40 Tc = 25 5V 4.5V 5V 4V 4.5V 150 150 3.5V 4V 3.5V Ic [A] Ic [A] 3V 100 100 3V 2.5V 2.5V 50 50 2V 2V Vge =1.5V Vge = 1.5V 0 0 0 2 4 6 8 0 10 2 4 8 10 Fig.2 Typical Output Characteristics Fig.1 Typical Output Characteristics 200 6 Vce [V] Vce [V] 200 Tc = 70 Tc = 125 5V 150 150 5V 4.5V 4.5V 4V Ic [A] Ic [A] 4V 3.5V 100 100 3.5V 3V 3V 2.5V 50 2.5V 50 2V 2V Vge =1.5V Vge =1.5V 0 0 0 2 4 6 8 10 Vce [V] Fig.3 Typical Output Characteristics 0 2 4 6 8 Vce [V] Fig.4 Typical Output Characteristics 10 Preliminary N-CHANNEL IGBT SGR20N40L SGR20N40L / SGU20N40L SGU20N40L 2.0 10000 Cies 1.5 Vge(th) [V] 1.0 100 Coes 0.5 Cres 0.0 10 10 20 30 40 -50 0 50 Tc [] Vce [V] Fig.5 Typical Capacitance vs. Collector to Emitter Voltage 100 150 Fig.6 Gate-Emitter Threshold Voltage vs. Case Temperature 200 8 Vge = 4.5V Vce = 8V 150 Tc = -40 7 70 125 150 6 25 4 100 Icp [A] 5 Vce(sat) [V] Capacitance [pF] 1000 100 3 70 2 Ic = 40A 50 1 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tc [ ] Fig.7 Collector to Emitter Saturation Voltage vs. Case Temperature 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Vge [V] Fig.8 Typical Output Characteristics 4.5 Preliminary N-CHANNEL IGBT SGR20N40L SGR20N40L / SGU20N40L SGU20N40L 10 Tc = -40 10 Tc = 25 6 6 Vce [V] 8 Vce [V] 8 150 150 4 4 100 100 70 70 Ic = 40A 2 Ic = 40A 2 0 0 0 1 2 3 4 5 0 6 1 2 Fig.9 Collector to Emitter Voltage vs. Gate to Emitter Voltage 10 Tc = 70 3 4 5 6 Vge [V] Vge [V] Fig.10 Collector to Emitter Voltage vs. Gate to Emitter Voltage 10 Tc = 125 8 8 150 6 6 Vce [V] Vce [V] 150 4 100 4 100 70 70 Ic = 40A 2 Ic = 40A 2 0 0 0 1 2 3 4 5 Vge [V] Fig.11 Collector to Emitter Voltage vs. Gate to Emitter Voltage 6 0 1 2 3 4 5 Vge [V] Fig.12 Collector to Emitter Voltage vs. Gate to Emitter Voltage 6