SGR15N40L SGU15N40L - Datasheet Archive

 

SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have

 

IGBT SGR15N40L SGR15N40L / SGU15N40L SGU15N40L General Description Features Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for strobe applications · High Input Impedance · High Peak Current Capability (130A) · Easy Gate Drive Application Strobe Flash C C G G E D-PAK Absolute Maximum Ratings Symbol VCES VGES ICM (1) PC TJ Tstg TL GC E I-PAK E TC = 25°C unless otherwise noted Description Collector - Emitter Voltage Gate - Emitter Voltage Pulsed Collector Current Maximum Power Dissipation @ TC = 25°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds SGR / SGU15N40L SGU15N40L 400 ±6 130 45 -40 to +150 -40 to +150 Units V V A W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC RJA (D-PAK) RJA (I-PAK) Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Thermal Resistance, Junction-to-Ambient Typ. - Max. 3.0 50 110 Units °C/W °C/W °C/W Notes : (2) Mounted on 1" square PCB (FR4 or G-10 Material) ©2000 Fairchild Semiconductor International SGR15N40L SGR15N40L / SGU15N40L SGU15N40L Rev. A SGR15N40L SGR15N40L / SGU15N40L SGU15N40L September 2000 Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 450 - - -10 ± 0.1 V uA uA IC = 1mA, VCE = VGE IC = 130A , VGE = 4.5V 0.5 2.0 1.0 4.5 1.4 8.0 V V VGE = 0V , VCE = 30V, f = 1MHz - 3000 45 30 - pF pF pF VCC = 300V , IC = 130A, VGE = 4.5V , RG = 15* Resistive Load - 0.08 1.4 0.1 1.1 -0.5 2.0 us us us us Off Characteristics BVCES ICES IGES Collector - Emitter Breakdown Voltage Collector Cut-Off Current G - E Leakage Current On Characteristics VGE(th) VCE(sat) G - E Threshold Voltage C - E Saturation Current Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time * Notes : Recommendation of RG Value : RG 15 ©2000 Fairchild Semiconductor International SGR15N40L SGR15N40L / SGU15N40L SGU15N40L Rev. A SGR15N40L SGR15N40L / SGU15N40L SGU15N40L Electrical Characteristics of IGBT T Collector-Emitter Voltage, VCE [V] 4.5V 150 4V Collector Current, I C [A] Common Emitter VGE = 4.5V 5V Commom Emitter TC = 25 120 3.5V 3V 90 VGE = 2.5V 60 30 6 130A 5 100A 4 IC = 70A 3 2 0 0 2 4 6 -50 8 0 Common Emitter TC = 25 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 150 10 Common Emitter TC = -40 8 6 130A 100A 4 IC = 70A 2 0 8 6 130A 100A 4 IC = 70A 2 0 0 1 2 3 4 5 6 0 Gate-Emitter Voltage , VGE [V] 1 2 3 4 5 6 Gate-Emitter Voltage, VGE [V] Fig 4. Saturation Voltage vs. VGE Fig 3. Saturation Voltage vs. VGE 10000 10 Common Emitter TC = 125 Cies 8 130A Capacitance [pF] Collector-Emitter Voltage, VCE [V] 100 Fig 2. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 1. Typical Output Characteristics 10 50 Case Temperature, TC [] Collector-Emitter Voltage, VCE [V] 6 100A 4 IC = 70A 1000 Common Emitter VGE = 0V, f = 1MHz TC = 25 100 Coes 2 Cres 10 0 0 1 2 3 4 Gate-Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2000 Fairchild Semiconductor International 5 6 0 10 20 30 40 Collector-Emitter Voltage, VCE [V] Fig 6. Capacitance Characteristics SGR15N40L SGR15N40L / SGU15N40L SGU15N40L Rev. A SGR15N40L SGR15N40L / SGU15N40L SGU15N40L 7 180 180 Collector Peak Current, I CP [A] Gate - Emitter Voltage, VGE [V] Common Emitter VCC = 300V, RL = 2.2 TC = 25 4 2 160 140 120 100 80 60 40 20 0 0 0 10 20 30 40 Gate Charge, Qg [nC] Fig 7. Gate Charge Characteristics ©2000 Fairchild Semiconductor International 50 60 0 2 4 6 8 10 Gate-Emitter Voltage, VGE [V] Fig 8. Collector Current Limit vs. Gate - Emitter Voltage Limit SGR15N40L SGR15N40L / SGU15N40L SGU15N40L Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. F1