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Part : SGP6N60UFDTU Supplier : Rochester Electronics LLC Manufacturer : Rochester Electronics Stock : - Best Price : - Price Each : -
Part : SGP6N60UFDTU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 869 Best Price : $0.62 Price Each : $0.76
Part : SGP6N60UFDTU_NL Supplier : Rochester Electronics LLC Manufacturer : Rochester Electronics Stock : - Best Price : - Price Each : -
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SGP6N60UF Datasheet

Part Manufacturer Description PDF Type
SGP6N60UF Fairchild Semiconductor Discrete, High Performance IGBT Original
SGP6N60UF Fairchild Semiconductor Ultra-Fast IGBT Original
SGP6N60UF Fairchild Semiconductor N-CHANNEL IGBT Scan
SGP6N60UFD Fairchild Semiconductor Ultra-Fast IGBT Original
SGP6N60UFD Fairchild Semiconductor Discrete, High Performance IGBT with Diode Original
SGP6N60UFD Fairchild Semiconductor N-CHANNEL IGBT Scan
SGP6N60UFDTU Fairchild Semiconductor Discrete, High Performance IGBT with Diode Original

SGP6N60UF

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SGP6N60UF FEATURES N-CHANNEL IGBT TO-220 * High Speed Switching * Low Saturation Voltage , temperature Rev.B ©1999 Fairchild Semiconductor Corporation N-CHANNEL IGBT SGP6N60UF ELECTRICAL , nC Le Internal Emitter Inductance Measured 5mm from PKG - 7.5 - nH SGP6N60UF , Case-to-Sink - 0.5 - °C/W N-CHANNEL IGBT SGP6N60UF 8 25 Vcc = 300V Load Current : peak , IGBT SGP6N60UF 10 T hermal Response [Zthjc] 0 .5 1 0 .2 0 .1 0 .0 5 Pdm 0 .0 2 Fairchild Semiconductor
Original

SGP6N60UF

Abstract: IGBT SGP6N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate , = 100°C SGP6N60UF 600 ± 20 6 3 25 30 12 -55 to +150 -55 to +150 Units V V A A A , . 4.0 62.5 Units °C/W °C/W SGP6N60UF Rev. A SGP6N60UF September 2000 Symbol , , Inductive Load, TC = 125°C VCE = 300 V, IC = 3A, VGE = 15V Measured 5mm from PKG SGP6N60UF Rev. A SGP6N60UF Electrical Characteristics of IGBT T Collector Current, IC [A] 25 Collector Current
Fairchild Semiconductor
Original
Abstract: method Product Folder - Fairchild P/N SGP6N60UF - Discrete, High Performance IGBT SGP6N60UFTU , SGP6N60UF IGBT SGP6N60UF Ultra-Fast IGBT General Description Fairchild's UF series of , °C SGP6N60UF 600 ± 20 6 3 25 30 12 -55 to +150 -55 to +150 300 Units V V A A A W W °C °C °C Notes : (1 , 4.0 62.5 Units °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGP6N60UF Rev. A1 SGP6N60UF Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise Fairchild Semiconductor
Original

SGP6N60UF

Abstract: SGP6N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat , This Material Copyrighted By Its Respective Manufacturer SGP6N60UF N-CHANNEL IGBT ELECTRICAL , Copyrighted By Its Respective Manufacturer SGP6N60UF N-CHANNEL IGBT THERMAL RESISTANCE Symbol , Case-to-Sink - 0.5 - °c/w This Material Copyrighted By Its Respective Manufacturer SGP6N60UF N-CHANNEL , SGP6N60UF N-CHANNEL IGBT Rectangular Pulse Duration [sec] Fig.5 Maximum Effective Transient Thermal
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OCR Scan

SGP6N60UF

Abstract: SGP6N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated , = 100°C SGP6N60UF 600 ± 20 6 3 25 30 12 -55 to +150 -55 to +150 Units V V A A A , . 4.0 62.5 Units °C/W °C/W SGP6N60UF Rev. A1 SGP6N60UF IGBT C Symbol Parameter , , Inductive Load, TC = 125°C VCE = 300 V, IC = 3A, VGE = 15V Measured 5mm from PKG SGP6N60UF Rev. A1 SGP6N60UF Electrical Characteristics of the IGBT T Collector Current, IC [A] 25 Collector
Fairchild Semiconductor
Original
Abstract: N-CHANNEL IGBT SGP6N60UF FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat , SGP6N60UF ELECTRICAL CHARACTERISTICS (Tc=25°C,Unless Otherwise Specified) Symbol Characteristics , 1MHz C O > II ^ G E (th ) O a v Typ Max SGP6N60UF N-CHANNEL IGBT THERMAL , Characteristics ReJC N-CHANNEL IGBT SGP6N60UF 0 Fig.1 Typical Load Current vs. Frequency 25 , T c fC ] Fig.4 Collector to Emitter Voltage vs. Case Temperature 10 SGP6N60UF N-CHANNEL -
OCR Scan
Abstract: SGP6N60UF FEATURES * High Speed Switching * Low Saturation Volatge : VC E(sat) = 2.1 V (@ lc , SGP6N60UF ELECTRICAL CHARACTERISTICS (Tc=25t:,Unless Otherwise Specified) Symbol BVCes ¿IV ces , = 300V VGE=15V < C O O II - Measured 5mm from PKG - 38 ELECTRONICS SGP6N60UF , SGP6N60UF N-CHANNEL IGBT Frequency [kHz} VceM Fig.1 Typical Load Current vs. Frequency Fig , Fig.4 Collector to Emitter Voltage vs. Case Temperature 40 ELECTRONICS SGP6N60UF N-CHANNEL -
OCR Scan
Abstract: SGP6N60UF FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V (@ lc , i C i N jO L J . ©1999 Fairchild Semiconductor Corporation SGP6N60UF ELECTRICAL , SGP6N60UF THERMAL RESISTANCE Symbol Rq JC R ftJA R eC S N-CHANNEL IGBT Characteristics , - - 0.5 U D SGP6N60UF N-CHANNEL IGBT 0.1 1 10 100 1000 0 2 4 , ft O M I U D S ä S ü ì'v 'j !C i C i N j O L J ìc ;.' 5` SGP6N60UF N-CHANNEL IGBT Thermal -
OCR Scan
Abstract: SGP6N60UF FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic , Corporation SGP6N60UF ELECTRICAL CHARACTERISTICS (Tc=25°C,Unless Otherwise Specified) Symbol BVCES VCES , PKG - SGP6N60UF THERMAL RESISTANCE Symbol RJC RJA RCS N-CHANNEL IGBT Characteristics , SGP6N60UF 8 Vcc = 300V Load Current : peak of square wave 25 N-CHANNEL IGBT 20 6 Tc = 25 Tc = , Current vs. Case Temperature Fig.4 Collector to Emitter Voltage vs. Case Temperature SGP6N60UF 10 Fairchild Semiconductor
Original

IC 74142

Abstract: SGP6N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Volatge : VCE , . junction temperature 7^4142 0 0 3 ^ 7 5 7 2bT SGP6N60UF N-CHANNEL IGBT ELECTRICAL , 7.5 7^4142 DD3T7Sfl 1Tb 95 ns 280 ns nH SGP6N60UF N-CHANNEL IGBT THERMAL , Max Units °c/w N-CHANNEL IGBT SGP6N60UF 100 1000 10000 100000 0 2 4 , .4 Collector to Emitter Voltage vs. Case Temperature 7 T b 4 1 4 E G D 3 T 7 b O Ã54 SGP6N60UF
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OCR Scan
IC 74142

IGBT Guide

Abstract: SGL40N150 80 80 110 100 80 110 100 50 50 70 80 80 80 110 80 110 80 100 50 70 TO-220 SGP6N60UF SGP13N60UF , SGR2N60UFD SGW6N60UFD SGW13N60UFD TO-220 SGP6N60UFD SGP13N60UFD TO-3P SGH13N60UFD SGH23N60UFD
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OCR Scan
SGH40N60UFD SGH80N60UFD SGL60N90D SGL40N150 IGBT Guide F 10 L 600 SGR6N60UF SGW6N60UF SGW13N60UF SGW23N60UF SGP23N60UF SGP40N60UF

SGH80N60RUFD

Abstract: bup314 equivalent SGH30N60UFD SGH30N60RUFD SGL30N60RUFD SGP6N60UF SGP6N60UFD SGW6N60UF SGW6N60UFD SGU6N60UF SGH80N60UF
Infineon Technologies
Original
SGH80N60RUFD BUP314 bup314 equivalent bup314d SGU06N60 motorola diode cross reference SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGL10N60RUFD SGS10N60RUFD

INDUCTION HEATING

Abstract: induction heating ic Control SGP6N60UF 600 3 2.1 70 No No Motor Control; Power Conversion SGP6N60UFD
Fairchild Semiconductor
Original
HGT1N30N60A4D SGF5N150UF INDUCTION HEATING induction heating ic high power Induction Heating HGT1S5N120BNDS SGS5N150UF HGT1N40N60A4D HGTP3N60C3 HGTP3N60C3D HGTP3N60B3 HGTP3N60B3D

SSP35n03

Abstract: bc417 -227 HGT1N30N60A4D HGT1N40N60A4D TO-220 HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 HGTP3N60B3D
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA

RURU8060

Abstract: 3 phase motor control 5.0 2.0 TO-220 SGP06N60 SGP6N60UF 600 3.0 2.1 TO-220 SGP04N60 SGP6N60UFD
Fairchild Semiconductor
Original
FFPF60B150DS RURU8060 3 phase motor control FM2G75US60 smps welding machine 1N4004 SMA FGS15N40L SGP5N60RUF SGP5N60RUFD HGTP7N60B3 HGTP7N60B3D HGTP7N60C3

STR-G6551

Abstract: STR-F6654 29 SGP5N60RUFD 29 SGP6N60UF 29 SGP6N60UFD 29 SGR15N40L 30 SGR20N40L 30 SGR2N60UFD 29
Infineon Technologies
Original
STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 2002-S P-DSO14/16 P-TO-220

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp SGP6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated , 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGP6N60UFD 600 ± 20 6 3 25 4 25 30 12 -55 , . - Max. 4.0 7.0 62.5 Units °C/W °C/W °C/W SGP6N60UFD Rev. A1 SGP6N60UFD IGBT , /us V ns A nC SGP6N60UFD Rev. A1 SGP6N60UFD Electrical Characteristics of the IGBT T , SGP6N60UFD 15 30 IC = 1.5A 1 4 2 0 Duty cycle : 50% TC = 100 Power Dissipation = 9W
Fairchild Semiconductor
Original
ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 S-112 F-91742

thermistor KSD201

Abstract: IRF power mosfets catalog SGP6N60UFD IG BT CO-PAK FEATURES * High Speed Switching * Low Saturation Volatge : VCE(sat , ) Repeatitive rating : Pulse width limited by max. junction temperature 7*ib414E 003^3 5b3 SGP6N60UFD IG BT , 4TT â  SGP6N60UFD IG BT CO-PAK ELECTRICAL CHARACTERISTICS (DIODE PART) (Tj=2S>c,Unless Otherwise , °c/w 7^4142 003^7^ 33b SGP6N60UFD IG BT CO-PAK ¿4 , Voltage vs. Case Temperature SGP6N60UFD IG BT CO-PAK Ractangular Puis« Duration [sec] Fig.5 Maximum
Fairchild Semiconductor
Original
thermistor KSD201 IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode make SMPS inverter welding machine ISO-14001
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