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SGP13N60UF Datasheet

Part Manufacturer Description PDF Type
SGP13N60UF Fairchild Semiconductor Discrete, High Performance IGBT Original
SGP13N60UF Fairchild Semiconductor IGBT Original
SGP13N60UF Fairchild Semiconductor N-CHANNEL IGBT Scan
SGP13N60UFD Fairchild Semiconductor Ultra-Fast IGBT Original
SGP13N60UFD Fairchild Semiconductor Discrete, High Performance IGBT with Diode Original
SGP13N60UFD Fairchild Semiconductor N-CHANNEL IGBT Original
SGP13N60UFD Fairchild Semiconductor N-CHANNEL IGBT Scan
SGP13N60UFDTU Fairchild Semiconductor Discrete, High Performance IGBT with Diode Original
SGP13N60UFTU Fairchild Semiconductor Discrete, High Performance IGBT Original

SGP13N60UF

Catalog Datasheet MFG & Type PDF Document Tags

SGP13N60UF

Abstract: SGP13N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated , = 100°C SGP13N60UF 600 ± 20 13 6.5 52 60 25 -55 to +150 -55 to +150 Units V V A A , Max. 2.0 62.5 Units °C/W °C/W SGP13N60UF Rev. A1 SGP13N60UF IGBT C Symbol , SGP13N60UF Rev. A1 SGP13N60UF Electrical Characteristics of the IGBT T 30 Common Emitter TC = 25 , 3 9 Load Current [A] Collector - Emitter Voltage, VCE [V] SGP13N60UF 60 6.5A 2
Fairchild Semiconductor
Original

GE power transistor list

Abstract: SGP13N60UF IGBT SGP13N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate , = 100°C SGP13N60UF 600 ± 20 13 6.5 52 60 25 -55 to +150 -55 to +150 Units V V A A , . - Max. 2.0 62.5 Units °C/W °C/W SGP13N60UF Rev. A SGP13N60UF September 2000 , 5mm from PKG SGP13N60UF Rev. A SGP13N60UF Electrical Characteristics of IGBT T 30 Common , GE = 15V 13A 3 9 Load Current [A] Collector - Emitter Voltage, VCE [V] SGP13N60UF
Fairchild Semiconductor
Original
GE power transistor list
Abstract: method Product Folder - Fairchild P/N SGP13N60UF - Discrete, High Performance IGBT SGP13N60UFTU , SGP13N60UF IGBT SGP13N60UF Ultra-Fast IGBT General Description Fairchild's UF series of , °C SGP13N60UF 600 ± 20 13 6.5 52 60 25 -55 to +150 -55 to +150 300 Units V V A A A W W °C °C °C Notes : (1 , 2.0 62.5 Units °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGP13N60UF Rev. A1 SGP13N60UF Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise Fairchild Semiconductor
Original

SGP13N60UF

Abstract: SGP13N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Voltage : VCE , Semiconductor Corporation This Material Copyrighted By Its Respective Manufacturer SGP13N60UF N-CHANNEL IGBT , from PKG - 7.5 - nH This Material Copyrighted By Its Respective Manufacturer SGP13N60UF N-CHANNEL , Respective Manufacturer SGP13N60UF N-CHANNEL IGBT Vcc = 300V Load Current : peak of square wave Duty , Its Respective Manufacturer SGP13N60UF N-CHANNEL IGBT 0.00001 0.0001 0.001 0.01 0.1 Rectangular
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OCR Scan
Abstract: SGP13N60UF FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V (@ lc , Säiü rv'ii C iC i N jO L J . ©1999 Fairchild Semiconductor Corporation SGP13N60UF , - - - SSiü rv'ii C iC i N jO L J rO Ï-5 . SGP13N60UF THERMAL RESISTANCE Symbol , SGP13N60UF N-CHANNEL IGBT 0.1 1 10 100 1000 0 2 4 6 8 10 Frequency , Temperature S ä iü r v 'ii C iC i N J O L J ^ 5` . SGP13N60UF N-CHANNEL IGBT R ectangular -
OCR Scan
Abstract: SGP13N60UF FEATURES * High Speed Switching * Low Saturation Volatge : V CE(sat) = 1.95 V (@ lc , ELECTRONICS SGP13N60UF ELECTRICAL CHARACTERISTICS (Tc=25t:, Unless Otherwise Specified) N-CHANNEL , - Vcc = 300V VGE=15V lc = 6.5A Measured 5mm from PKG - 44 ELECTRONICS SGP13N60UF , SGP13N60UF N-CHANNEL IGBT Frequency [kHz] VceM Fig.1 Typical Load Current vs. Frequency Fig , ELECTRONICS SGP13N60UF N-CHANNEL IGBT Rectangular Pulse Duration [sec] Fig,5 Maximum Effective -
OCR Scan
Abstract: N-CHANNEL IGBT SGP13N60UF FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat , IGBT SGP13N60UF ELECTRICAL CHARACTERISTICS (Tc=25°C,Unless Otherwise Specified) Symbol , Internal Emitter Inductance Measured 5mm from PKG - 7.5 - nH Units SGP13N60UF , °c/w Symbol Characteristics ReJC N-CHANNEL IGBT SGP13N60UF 0 2 4 Fig , Emitter Voltage vs. Case Temperature N-CHANNEL IGBT SGP13N60UF R ectangular P ulse Duration [sec -
OCR Scan
Abstract: SGP13N60UF N-CHANNEL IGBT FEATURES T0-220 * High Speed Switching * Low Saturation , max. junction temperature 7Tbm42 0 0 3 ^ 7 3 2 * m W N-CHANNEL IGBT SGP13N60UF ELECTRICAL , SGP13N60UF N-CHANNEL IGBT THERMAL RESISTANCE Symbol Characteristics ReJC Junction-to-Case , SGP13N60UF 0 1 2 3 Frequency [Hz] 50 75 100 5 6 7 8 9 10 Vce M , 3 ^ 7 3 5 bTR SGP13N60UF N-CHANNEL IGBT Rectangular Pulse Duration [sec] Fig.5 Maximum -
OCR Scan
00M1N
Abstract: SGP13N60UF FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic , Semiconductor Corporation SGP13N60UF ELECTRICAL CHARACTERISTICS (Tc=25°C,Unless Otherwise Specified , VGE = 15V Ic = 6.5A Measured 5mm from PKG - SGP13N60UF THERMAL RESISTANCE Symbol RJC RJA RCS , Max 2.0 80 - Units °C/W °C/W °C/W SGP13N60UF 12 Vcc = 300V Load Current : peak of square , Current vs. Case Temperature Fig.4 Collector to Emitter Voltage vs. Case Temperature SGP13N60UF 10 Fairchild Semiconductor
Original

IGBT Guide

Abstract: SGL40N150 80 80 110 100 80 110 100 50 50 70 80 80 80 110 80 110 80 100 50 70 TO-220 SGP6N60UF SGP13N60UF , SGR2N60UFD SGW6N60UFD SGW13N60UFD TO-220 SGP6N60UFD SGP13N60UFD TO-3P SGH13N60UFD SGH23N60UFD
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OCR Scan
SGH40N60UFD SGH80N60UFD SGL60N90D SGL40N150 IGBT Guide F 10 L 600 SGR6N60UF SGW6N60UF SGW13N60UF SGW23N60UF SGP23N60UF SGP40N60UF

SSP35n03

Abstract: bc417 (*) SGL5N60RUFD Fairchild (*) SGR5N60RUF Fairchild (*) SGP13N60UF Fairchild (*) SGP13N60UFD Fairchild
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA

SGH80N60RUFD

Abstract: bup314 equivalent ; Power Conversion SGP13N60UF 600 6.5 2.1 97 No No Motor Control; Power Conversion SGP13N60UFD 600 6.5 2.1 97 No Yes Motor Control; Power Conversion HGTP7N60B3 600
Infineon Technologies
Original
SGH30N60UFD SGH80N60RUFD BUP314 bup314 equivalent bup314d SGU06N60 SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGL10N60RUFD SGS10N60RUFD

INDUCTION HEATING

Abstract: induction heating ic SGP5N60RUF SGP5N60RUFD SGP13N60UF SGP13N60UFD HGTP7N60B3 HGTP7N60B3D HGTP7N60C3 HGTP7N60C3D
Fairchild Semiconductor
Original
HGT1N30N60A4D SGF5N150UF INDUCTION HEATING induction heating ic high power Induction Heating HGT1S5N120BNDS SGS5N150UF HGT1N40N60A4D HGTP3N60C3 HGTP3N60C3D HGTP3N60B3 HGTP3N60B3D

RURU8060

Abstract: 3 phase motor control TO-3P IKW08T120 SGP10N60RUF 600 10.0 2.2 TO-220 SGP10N60A SGP13N60UF 600 6.5 2.0 TO-220 SGP06N60 SGP13N60UFD 600 6.5 2.0 TO-220 SKP04N60
Fairchild Semiconductor
Original
FFPF60B150DS RURU8060 3 phase motor control FM2G75US60 smps welding machine 1N4004 SMA FGS15N40L HGTP3N60A4 HGTP3N60A4D HGTP12N60B3 HGTP12N60B3D HGTP12N60C3

STR-G6551

Abstract: STR-F6654 SGP13N60UF 29 SGP13N60UFD 29 SGP15N60RUF 29 SGP20N60RUF 29 SGP23N60UF 29 SGP40N60UF 29 SGP5N60RUF
Infineon Technologies
Original
STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 2002-S P-DSO14/16 P-TO-220

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp IGBT SGP13N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate , 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGP13N60UFD 600 ± 20 13 6.5 52 8 56 60 25 , . - Max. 2.0 3.5 62.5 Units °C/W °C/W °C/W SGP13N60UFD Rev. A SGP13N60UFD , /dt = 200A/us V ns A nC SGP13N60UFD Rev. A SGP13N60UFD Electrical Characteristics of , ] SGP13N60UFD 60 6.5A 2 IC = 3A 6 3 1 Duty cycle : 50% TC = 100 Power Dissipation = 14W
Fairchild Semiconductor
Original
ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 S-112 F-91742
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