500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : SGP10N60RUFDTU Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : SGP10N60RUFDTU Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.7929 Price Each : €1.1349
Part : SGP10N60RUFDTU Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.6909 Price Each : $0.7319
Part : SGP10N60A Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 37,300 Best Price : $1.10 Price Each : $1.36
Part : SGP10N60RUFDTU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 21,677 Best Price : $1.37 Price Each : $1.68
Shipping cost not included. Currency conversions are estimated. 

SGP10N60 Datasheet

Part Manufacturer Description PDF Type
SGP10N60 Infineon Technologies 10A 600V TO220AB IGBT Original
SGP10N60 Siemens IGBT Original
SGP10N60 Siemens Fast S-IGBT in NPT-Technology Original
SGP10N60 Siemens Original
SGP10N60A Infineon Technologies Fast IGBT in NPT-Technology Original
SGP10N60RUF Fairchild Semiconductor N-CHANNEL IGBT Original
SGP10N60RUF Fairchild Semiconductor Short Circuit Rated IGBT Original
SGP10N60RUF Fairchild Semiconductor Discrete, Short Circuit Rated IGBT Original
SGP10N60RUF Fairchild Semiconductor N-CHANNEL IGBT Scan
SGP10N60RUFD Fairchild Semiconductor IGBT Original
SGP10N60RUFD Fairchild Semiconductor Discrete, Short Circuit Rated IGBT with Diode Original
SGP10N60RUFD Fairchild Semiconductor CO-PAK IGBT Scan
SGP10N60RUFDTU Fairchild Semiconductor Discrete, Short Circuit Rated IGBT with Diode Original

SGP10N60

Catalog Datasheet MFG & Type PDF Document Tags

bup400d

Abstract: Preliminary data SIEMENS SGP10N60, SGB10N60, SGW10N60 Fast S-IGBT in NPT-Technology â , capability E TO-220AB E TO-263AB £ SGP10N60 600 V LU Type h 10 A ^CE(sat , SGP10N60, SGB10N60, SGW10N60 Thermal Resistance Parameter Symbol Values Unit min. typ , SIEMENS SGP10N60, SGB10N60, SGW10N60 Electrical Characteristics, at 7| =25 °C, unless otherwise , cto r G ro u p 3 0 2 /1 9 9 9 Preliminary data SIEMENS SGP10N60, SGB10N60, SGW10N60
-
OCR Scan
bup400d Q67041-A4710-A2 Q67041-A4710-A4 Q67040-S4234

bup400d

Abstract: Q67041-A4710-A2 Preliminary data SGP10N60, SGB10N60, SGW10N60 Fast S-IGBT in NPT-Technology · 75 % lower Eoff , VCE(sat) 600 V 10 A 2.2 V Type SGP10N60 Tj Package Ordering Code 150 °C TO , SGP10N60, SGB10N60, SGW10N60 Thermal Resistance Parameter Symbol Values Unit min. typ , / 1999 SGP10N60, SGB10N60, SGW10N60 Electrical Characteristics, at Tj =25 °C, unless otherwise , Semiconductor Group 3 02 / 1999 Preliminary data SGP10N60, SGB10N60, SGW10N60 Switching
Siemens
Original
bup400 IC Packages siemens igbt BUP400D SMD Q67040S4234

Q67041-A4710-A2

Abstract: SGB10N60 SGP10N60 SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology · 75% lower Eoff compared to previous , -220AB Q67041-A4710-A2 SGB10N60 TO-263AB Q67041-A4710-A4 SGW10N60 TO-247AC Q67040-S4234 SGP10N60 , : 1s. 1 Mar-00 SGP10N60 SGB10N60, SGW10N60 Thermal , short circuits: >1s. 2 Mar-00 SGP10N60 SGB10N60, SGW10N60 Switching Characteristic, Inductive , Total switching energy Ets - 0.577 0.706 3 ns mJ Mar-00 SGP10N60 SGB10N60
Infineon Technologies
Original
Abstract: SIEMENS P relim inary data IGBT SGP10N60 · Low forward voltage drop · High switching speed · Low tail current · Latch-up free · Avalanche rated Type SGP10N60 Maximum Ratings Parameter , , junction - case RthJC , . Values typmax. SGP10N60 Unit AC Characteristics T ranscond uctance \/c e = 20 V, /c = 10 A Input , ) SGP10N60 Values typ. max. Unit ns = 25 £2 * r 20 30 Rise time Vcc = 400 V, VGE = 15 V -
OCR Scan
Q67040-A P400D SGF10N60 GPT05155

bup400

Abstract: BUP400D SGP10N60 Preliminary data IGBT · Low forward voltage drop · High switching speed · Low , VCE IC Package Ordering Code SGP10N60 600V 10A TO-220 AB Q67040-A . . . . , Semiconductor Group W P tot 125 1 Apr-08-1998 SGP10N60 Preliminary data Maximum Ratings , nA IGES 2 - 100 Apr-08-1998 SGP10N60 Preliminary data Electrical , -08-1998 SGP10N60 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Siemens
Original

SGH80N60RUFD

Abstract: bup314 equivalent (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) SGR2N60UFD SGP10N60RUF SGP10N60RUFD , anti-parallel diode Closest Siemens Equivalent SKB02N60 SGP10N60 SKP10N60 SKP10N60 SKB10N60 SKW10N60 , SGP06N60 SKP10N60 SGB10N60 SKB10N60 SKP10N60 SGP10N60 SGP20N60 SGW20N60 SKW20N60 SGD06N60 , / SGP10N60 no device SGU06N60 / SGP10N60 SGD06N60 / SGB10N60 SGB06N60 / SGB10N60 SGP15N60 no device , SGW25N120 SGW25N120 no device no device no device no device SGP06N60 SGP10N60,SGP15N60 SGP20N60
Infineon Technologies
Original
SGH30N60UFD SGH80N60RUFD BUP314 bup314 equivalent bup314d motorola diode cross reference SGH10N60RUFD SGW10N60RUFD SGL10N60RUFD SGS10N60RUFD SGP23N60UF SGW23N60UFD

7222-F

Abstract: SGP10N60 Preliminary SIGC12T60SN IGBT Chip in NPT-technology C FEATURES: · 600V NPT technology · 100µm chip · short circuit prove · positive temperature coefficient · easy paralleling Chip Type VCE SIGC12T60SN 600V This chip is used for: · SGP10N60 G Applications: · drives ICn 10A Die Size Package 3.5 x 3.5 mm2 sawn on foil E Ordering Code , CHARACTERISTICS: This chip data sheet refers to the device data sheet SGP10N60 Package :TO220
Infineon Technologies
Original
7222-F Q67041-A4664A001

SGP10N60

Abstract: SIGC12T60SNC SIGC12T60SNC IGBT Chip in NPT-technology C FEATURES: · 600V NPT technology · 100µm chip · short circuit prove · positive temperature coefficient · easy paralleling This chip is used for: · SGP10N60 G Applications: · drives Chip Type VCE ICn Die Size Package SIGC12T60SNC 600V 10A 3.5 x 3.5 mm2 sawn on foil SIGC12T60SNC 600V 10A 3.5 x 3.5 mm2 unsawn , ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet SGP10N60 Package
Infineon Technologies
Original
7222 UM 7222 G Q67041-A4664A002 7222-S

SGP10N60

Abstract: SIGC12T60SNC SIGC12T60SNC IGBT Chip in NPT-technology C FEATURES: · 600V NPT technology · 100µm chip · short circuit prove · positive temperature coefficient · easy paralleling This chip is used for: · SGP10N60 G Applications: · drives Chip Type VCE ICn Die Size Package SIGC12T60SNC 600V 10A 3.5 x 3.5 mm2 sawn on foil SIGC12T60SNC 600V 10A 3.5 x 3.5 mm2 unsawn , : This chip data sheet refers to the device data sheet SGP10N60 Package :TO220 Description
Infineon Technologies
Original
Abstract: SIGC12T60SNC IGBT Chip in NPT-technology C FEATURES: â'¢ 600V NPT technology â'¢ 100µm chip â'¢ short circuit prove â'¢ positive temperature coefficient â'¢ easy paralleling This chip is used for: â'¢ SGP10N60 G Applications: â'¢ drives Chip Type VCE ICn Die Size Package SIGC12T60SNC 600V 10A 3.5 x 3.5 mm2 sawn on foil SIGC12T60SNC 600V 10A , : This chip data sheet refers to the device data sheet SGP10N60 Package :TO220 Description Infineon Technologies
Original

SIGC12T60SNC

Abstract: TO220 package infineon SIGC12T60SNC IGBT Chip in NPT-technology C FEATURES: · 600V NPT technology · 100µm chip · short circuit prove · positive temperature coefficient · easy paralleling This chip is used for: · SGP10N60 G Applications: · drives Chip Type VCE ICn Die Size Package SIGC12T60SNC 600V 10A 3.5 x 3.5 mm2 sawn on foil SIGC12T60SNC 600V 10A 3.5 x 3.5 mm2 unsawn , : This chip data sheet refers to the device data sheet SGP10N60 Package :TO220 Description
Infineon Technologies
Original
TO220 package infineon
Abstract: Preliminary SIGC12T60SNC IGBT Chip in NPT-technology FEATURES: · 600V NPT technology · 100µm chip · short circuit prove · positive temperature coefficient · easy paralleling C This chip is used for: · SGP10N60 Applications: · drives G E Chip Type SIGC12T60SNC SIGC12T60SNC VCE 600V 600V ICn 10A 10A Die Size 3.5 x 3.5 mm2 3.5 x 3.5 mm2 Package Ordering Code , ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet SGP10N60 Package Infineon Technologies
Original
Q67041-A4664

A001

Abstract: SGP10N60 Preliminary SIGC12T60SNC IGBT Chip in NPT-technology C FEATURES: · 600V NPT technology · 100µm chip · short circuit prove · positive temperature coefficient · easy paralleling Chip Type VCE This chip is used for: · SGP10N60 G Applications: · drives ICn Die Size E Package SIGC12T60SNC 600V 10A 3.5 x 3.5 mm2 SIGC12T60SNC 600V 10A 3.5 x 3.5 mm2 , ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet SGP10N60 Package
Infineon Technologies
Original
A001

SIPC69N60C3

Abstract: SPW20N60S5 equivalent Dual_Pspice.exe SGP02N60 SGP04N60 SGP06N60 SGP10N60 SGB15N60 SGW20N60 SKP02N60 SKP06N60 SKW10N60
Infineon Technologies
Original
BTS555 SPNA2N80C2 SIPC26N60C3 SIPC30S2N08 BSP229 SKP15N60 SIPC69N60C3 SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets BUZ78 equivalent SDP06S60 SDP04S60 SDB10S30 BTS550P BTS650P

igbt dimmer

Abstract: SKW30N60HS SGP06N60 10 A 21 A 2.2 V 0.28 mJ SGB10N60 SGP10N60 SGW10N60 15 A 31 A 2.3 V
Infineon Technologies
Original
SGB02N60 SGB04N60 igbt dimmer SKW30N60HS SGP15N120 SKW25N120 igbt 2A 220 volt dimmer circuit SGD02N60 SGD04N60 B152-H7942-X-X-7600

mosfet d408

Abstract: transistor d407 30.0 Type SGP02N60 SGP04N60 SGP06N60 SGP10N60 SGP15N60 SGP20N60 SGP30N60 VCE [V] 600 I
Freescale Semiconductor
Original
mosfet d408 transistor d407 TRANSISTOR D405 mosfet D403 transistor tp122 D408 mosfet

BUZ MOSFET

Abstract: mosfet BUZ 326 DF01S DF02M DF02S DF04M DF04S DF06M DF06S DF08M DF08S DF10M DF10S DF02M DF04M SGP10N60RUF SGP10N60RUFD SGW10N60RUFD SGH10N60RUFD SGL60N90D 1N4447 1N4448 1N3070 1N3070 1N4448 1N4448 1N4448
Siemens
Original
BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615NV PL-03-821 B152-H6493-G5-X-7600

SSP35n03

Abstract: bc417 SGP10N60RUFD RON() 40 60 80 100 120 Loss(µJ) 3.16 3.58 4.73 5.31 6.44 , 66.4 67.2 SGP10N60RUFD RON() 40 60 80 100 120 Loss(µJ) 45.9 45.9 47.3
-
Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA
Showing first 20 results.