SGA-3463 DC-2000 EDS-100636 SGA-3463-TR1

Product Description SGA-3463 Stanford Microdevices' SGA-3463 is a high performance cascadeable 50-ohm amplifier designed for

Preliminary Product Description SGA-3463 SGA-3463 Stanford Microdevices' SGA-3463 SGA-3463 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.8V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-3463 SGA-3463 requires only DC blocking and bypass capacitors for external components. Small Signal Gain vs. Frequency 24 18 DC-2000 DC-2000 MHz Silicon Germanium HBT Cascadeable Gain Block Product Features · DC-2000 DC-2000 MHz Operation · Single Voltage Supply · High Output Intercept: +24.0dBm typ. at 850 MHz · Low Current Draw: 35mA at 2.8V typ. · Low Noise Figure: 2.5dB typ. at 850 MHz dB 1 2 6 Frequency MHz Symbol 6000 3500 2400 1900 900 500 100 0 Applications · Oscillator Amplifiers · PA for Low Power Applications · IF/ RF Buffer Amplifier · Drivers for CATV Amplifiers Parameters: Test Conditions: Z0 = 50 Ohms, Id = 35 mA, T = 25ºC Units Min. dB m dB m Typ. P 1dB Output Power at 1dB Compression f = 850 MHz f = 1950 MHz S 21 Small Signal Gain f = DC - 1000 MHz f = 1000 - 2000 MHz dB dB S 12 Reverse Isolation f = DC - 1000 MHz f = 1000 - 2000 MHz dB dB S11 Input VSWR f = DC - 2000 MHz - 1.2 S 22 Output VSWR f = DC - 2000 MHz - 1.1 IP3 Third Order Intercept Point Power out per Tone = -5 dBm f = 850 MHz f = 1950 MHz dB m dB m 24.0 24.6 NF Noise Figure f = DC - 1000 MHz f = 1000 - 2000 MHz dB dB 2.7 3.0 TD Group Delay f = 1000 MHz pS 121 VD Device Voltage Max. V 11.3 11.0 20.3 22.5 20.5 24.6 24.4 2.5 2.8 3.1 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100636 EDS-100636 Rev A Preliminary Preliminary SGA-3463 SGA-3463 DC-2000 DC-2000 MHz 2.8V SiGe Amplifier Specification Parameter Bandwidth Frequency Range Device Bias Operating Voltage Operating Current 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation Min Typ. Test Max. Unit 2000 Condition MHz T= 25C DC T= 25C 2.8 35 V mA 22.6 2.8 24.6 10.9 18.2 24.9 dB dB dB m dB m dB dB 22.0 2.5 24.0 11.3 17.2 24.7 dB dB dB m dB m dB dB 19.5 2.9 24.6 11.0 16.1 23.8 dB dB dB m dB m dB dB T= 25C T= 25C T= 25C The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-100636 EDS-100636 Rev A Preliminary Preliminary SGA-3463 SGA-3463 DC-2000 DC-2000 MHz 2.8V SiGe Amplifier Pin # 1 2 3 4 5 6 Function Description GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. GND Sames as Pin 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Sames as Pin 1 GND Sames as Pin 1 RF OUT RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Device Schematic Application Schematic for +5V Operation at 900 MHz Note: A bias resistor is needed for stability over temperature 1uF 68pF 63 ohms VCC=+5V 33nH 50 ohm microstrip 50 ohm microstrip 1,2 3 6 100pF 100pF 4,5 Application Schematic for +5V Operation at 1900 MHz 1uF 22pF 63 ohms VCC=+5V 22nH 50 ohm microstrip 50 ohm microstrip 1,2 3 6 68pF 4,5 68pF The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-100636 EDS-100636 Rev A Preliminary Preliminary SGA-3463 SGA-3463 DC-2000 DC-2000 MHz 2.8V SiGe Amplifier S21, Id =35mA, T=+25C S12, Id =35mA, T=+25C 3500 6000 3500 6000 2400 1900 6000 Frequency MHz 900 -4 0 500 0 100 -3 0 3500 6 2400 dB -2 0 1900 12 100 -1 0 900 18 dB 0 500 24 Frequency MHz S22, Id =35mA, T=+25C S11, Id =35mA, T=+25C 2400 100 1900 -4 0 900 -4 0 500 -3 0 6000 -3 0 3500 dB -2 0 2400 dB -2 0 1900 -1 0 900 -1 0 500 0 100 0 Frequency MHz Frequency MHz S22, Id=35mA, Ta= +25C S11, Id=35mA, Ta= +25C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-100636 EDS-100636 Rev A Preliminary Preliminary SGA-3463 SGA-3463 DC-2000 DC-2000 MHz 2.8V SiGe Amplifier S21, Id =35mA, T=-40C S12, Id =35mA, T=-40C 6000 3500 2400 6000 Frequency MHz 1900 -4 0 900 0 500 -3 0 100 6 3500 dB -2 0 2400 dB 1 2 1900 -1 0 900 18 500 0 100 24 Frequency MHz S22, Id =35mA, T=-40C S11, Id =35mA, T=-40C 6000 3500 2400 100 1900 -4 0 900 -4 0 500 -3 0 6000 -3 0 3500 dB -2 0 2400 dB -2 0 1900 -1 0 900 -1 0 500 0 100 0 Frequency MHz Frequency MHz S22, Id=35mA, T=-40C S11, Id=35mA, T=-40C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-100636 EDS-100636 Rev A Preliminary Preliminary SGA-3463 SGA-3463 DC-2000 DC-2000 MHz 2.8V SiGe Amplifier S21, Id =35mA, T=+85C S12, Id =35mA, T=+85C 3500 6000 3500 6000 2400 1900 6000 Frequency MHz 900 -4 0 500 0 100 -3 0 3500 6 2400 dB -2 0 1900 12 100 -1 0 900 18 dB 0 500 24 Frequency MHz S22, Id =35mA, T=+85C S11, Id =35mA, T=+85C 2400 100 1900 -4 0 900 -4 0 500 -3 0 6000 -3 0 3500 dB -2 0 2400 dB -2 0 1900 -1 0 900 -1 0 500 0 100 0 Frequency MHz Frequency MHz S22, Id=35mA, T=+85C S11, Id=35mA, T=+85C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-100636 EDS-100636 Rev A Preliminary Preliminary SGA-3463 SGA-3463 DC-2000 DC-2000 MHz 2.8V SiGe Amplifier Part Number Ordering Information Absolute Maximum Ratings Parameter Value U nit Part Number Reel Siz e Devices/Reel 70 mA SGA-3463-TR1 SGA-3463-TR1 7" 3000 -40 to +85 C +5 dB m Supply C urrent Operati ng Temperature Maxi mum Input Power Storage Temperature Range -40 to +85 C +125 C Operati ng Juncti on Temperature Caution: Recommended Bias Resistor Values Operation of this device above any one of these parameters may cause permanent damage. Appropriate precautions in handling, packaging and testing devices must be observed. Thermal Resistance (Lead-Junction): 255° C/W 6 5 Supply Voltage(Vs) 4V 5V 7.5V 9V 12V Rbias (Ohms) 34 63 134 177 263 4 Pin Designation 1 2 RF in 4 GND 5 1 2 GND 6 3 RF out Package Dimensions Pad Layout 0.026 1.30 (0.051) REF. 2.20 (0.087) 2.00 (0.079) when you can read package marking GND 3 A34 Package Marking Note: Pin 1 is on lower left GND 1.35 (0.053) 1.15 (0.045) 0.075 0.035 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.016 0.425 (0.017) TYP. 0.10 (0.004) 0.00 (0.00) 1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006) 0.20 (0.0080 0.10 (0.004) 0.30 REF. 10° 0.30 (0.012) 0.10 (0.0040 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 7 http://www.stanfordmicro.com EDS-100636 EDS-100636 Rev A