SFF130/5 SFF130 IRFF130 MIL-PRF-19500 F00019D

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773

SFF130/5 SFF130/5 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER'S DATA SHEET 8 AMP / 100 Volts 0.18 N-Channel Power MOSFET Part Number / Ordering Information 1/ SFF130 SFF130 _ _ Screening 2/ _ = Not Screen TX = TX Level TXV = TXV Level S = S Level Package /5= TO-5 Features: · · · · · · · · · · · · TO-5 Rugged Construction with Poly Silicon Gate Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Package Available in both hot case and isolated versions Ideal for low power applications TX, TXV, Space Level Screening Available 2/ Replacement for IRFF130 IRFF130 Types Maximum Ratings 3/ Symbol Value Units Drain Source Voltage VDS 100 Volts Gate Source Voltage VGS ±20 Volts TC = 25ºC TC = 100ºC TC = 25ºC TA = 25ºC Continuous Collector Current Power Dissipation PD Amps Watts Top & Tstg ºC 5 ºC/W EAS Thermal Resistance Junction to Case Single Pulse Avalanche Energy -55 to +150 RJC Operating & Storage Temperature NOTES: 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500 MIL-PRF-19500. 3/ Unless Otherwise Specified, All Maximum Ratings and Electrical Characteristics @25ºC. 8 5 25 19 ID 75 mJ TO-5 Case Outline: NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00019D F00019D DOC SFF130/5 SFF130/5 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units BVDSS 100 Volts BVDSS Tj 100 mV/ ºC RDS(on) 0.13 0.14 0.18 0.21 VGS(th) 2.0 2.8 4.0 V gfs 3 7 mho Zero Gate Voltage Drain Current (VDS=80% max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125ºC) IDSS 25 250 µA Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IGSS +100 -100 nA VGS=10 Volts 50% rated VDS Rated ID Qg Qgs Qgd 12 1 3.8 17 3.7 7.0 28 6.3 16.6 nC td(on) tr td(off) tf 9.5 42 22 25 30 75 40 45 nsec VSD 1 1.5 V Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µA) Temperature Coefficient of Breakdown Voltage ID=5A ID=8A Drain to Source On State Resistance (VGS=10 V ) Gate Threshold Voltage (VDS=VGS, ID=250 µA ) Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 9A) Total Gate Charge Gate to Source Charge Gate to Drain Charge VDD=50% Rated VDS ID = 8A RG= 7.5 Turn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) Diode Reverse Recovery Time Reverse Recovery Charge TJ=25ºC IF=10A Di/dt=100A/µsec trr QRR 120 0.7 300 3 nsec nC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0 Volts VDS=25 Volts f=1 MHz Ciss Coss Crss 650 250 44 pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. Available Part Number: SFF130/5 SFF130/5 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. PIN ASSIGNMENT (Standard) Package TO-5 Drain Pin 3 DATA SHEET #: F00019D F00019D Source Pin 1 Gate Pin 2 DOC