E63532 B100/125 1/T-1/T100 - Datasheet Archive

 

Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC 1200 232 A Tc = 80 °C 179 A 150 Tj = 175 °C V Tc = 25

 

SEMiX151GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC 1200 232 A Tc = 80 °C 179 A 150 Tj = 175 °C V Tc = 25 °C A ICnom ICRM SEMiX®13 tpsc Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 150 A 450 A VGES VCC = 800 V VGE 15 V Tj = 150 °C VCES 1200 V Tj Inverse diode IF SEMiX151GD12T4s Tj = 175 °C IFnom Features · Homogeneous Si · Trench = Trenchgate technology · VCE(sat) with positive temperature coefficient · High short circuit capability · UL recognised file no. E63532 E63532 Typical Applications · AC inverter drives · UPS · Electronic Welding IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C A -40 . 175 Tj °C Module It(RMS) 600 Visol °C 4000 AC sinus 50Hz, t = 1 min A -40 . 125 Tstg V Characteristics Symbol · Case temperature limited to TC=125°C max. · Product reliability results are valid for Tj=150°C typ. max. Unit Tj = 25 °C 1.8 2.05 V Tj = 150 °C 2.20 2.4 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C Remarks Conditions min. 0.7 0.8 V Tj = 25 °C 6.7 7.7 m 10.0 10.7 m 5.8 6.5 V 0.1 0.3 mA IGBT VCE(sat) IC = 150 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V VGE(th) ICES VGE = 0 V VCE = 1200 V Tj = 150 °C VGE=VCE, IC = 6 mA Cies Coes Cres VCE = 25 V VGE = 0 V 5 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 9.3 nF f = 1 MHz 0.58 nF f = 1 MHz 0.51 nF QG VGE = - 8 V.+ 15 V 850 nC RGint Tj = 25 °C 5.00 td(on) 190 ns Eoff VCC = 600 V IC = 150 A Tj = 150 °C RG on = 1 RG off = 1 di/dton = 3900 A/µs di/dtoff = 2000 A/µs Rth(j-c) per IGBT Rth(j-s) per IGBT tr Eon td(off) tf 39 ns 14.1 mJ 420 ns 63 ns 14.4 mJ 0.19 K/W K/W GD © by SEMIKRON Rev. 20 ­ 02.12.2008 1 SEMiX151GD12T4s Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 min. typ. max. Unit Tj = 25 °C 2.1 2.5 V Tj = 150 °C 2.1 2.4 V V SEMiX®13 1.1 1.3 1.5 0.7 0.9 1.1 V Tj = 25 °C rF Tj = 25 °C Tj = 150 °C 4.3 5.6 6.4 m 6.7 7.8 8.5 m Rth(j-c) Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 3400 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode Rth(j-s) per diode IRRM Trench IGBT Modules SEMiX151GD12T4s Qrr Err 185 A 23 µC 8.9 mJ 0.31 K/W K/W Module LCE Features · Homogeneous Si · Trench = Trenchgate technology · VCE(sat) with positive temperature coefficient · High short circuit capability · UL recognised file no. E63532 E63532 Typical Applications · AC inverter drives · UPS · Electronic Welding Remarks · Case temperature limited to TC=125°C max. · Product reliability results are valid for Tj=150°C RCC'+EE' 20 res., terminal-chip Rth(c-s) to heat sink (M5) 1 m K/W 3 to terminals (M6) Mt m 0.04 per module Ms TC = 125 °C nH 0.7 TC = 25 °C 5 Nm 2.5 5 Nm Nm w 350 g Temperature sensor R100 Tc=100°C (R25=5 k) 0,493 ±5% k B100/125 B100/125 R(T)=R100exp[B100/125 B100/125(1/T-1/T100 1/T-1/T100)]; T[K]; 3550 ±2% K GD 2 Rev. 20 ­ 02.12.2008 © by SEMIKRON SEMiX151GD12T4s Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic © by SEMIKRON Rev. 20 ­ 02.12.2008 3 SEMiX151GD12T4s Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 20 ­ 02.12.2008 © by SEMIKRON SEMiX151GD12T4s SEMiX 13 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 20 ­ 02.12.2008 5