NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
E63532 B100/125 1/T-1/T100 - Datasheet Archive
Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC 600 201 A Tc = 80 °C 152 A 150 Tj = 175 °C V Tc = 25
SEMiX151GD066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC 600 201 A Tc = 80 °C 152 A 150 Tj = 175 °C V Tc = 25 °C A ICnom ICRM SEMiX®13 tpsc Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C 219 A Tc = 80 °C 161 A 150 A VGES VCC = 360 V VGE 15 V Tj = 150 °C VCES 600 V Tj Inverse diode SEMiX151GD066HDs IF Preliminary Data Tj = 175 °C IFnom Features · Homogeneous Si · Trench = Trenchgate technology · VCE(sat) with positive temperature coefficient · UL recognised file no. E63532 E63532 Typical Applications · Matrix Converter · Resonant Inverter · Current Source Inverter IFRM IFRM = 2xIFnom 300 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 980 A -40 . 175 °C Tj Module It(RMS) Visol · Case temperature limited to TC=125°C max. · Product reliability results are valid for Tj=150°C · For short circuit: Soft RGoff recommended · Take care of over-voltage caused by stray inductance 4000 AC sinus 50Hz, t = 1 min A °C V Characteristics Symbol Remarks 600 -40 . 125 Tstg Conditions min. typ. max. Unit Tj = 25 °C 1.45 1.9 V Tj = 150 °C 1.70 2.1 V IGBT VCE(sat) IC = 150 A VGE = 15 V chiplevel Tj = 25 °C rCE VGE = 15 V 0.9 1 V Tj = 150 °C VCE0 0.85 0.9 V Tj = 25 °C 3.7 6.0 m m Tj = 150 °C VGE(th) VGE=VCE, IC = 2.4 mA ICES VGE = 0 V VCE = 600 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 25 °C 5.7 5 8.0 5.8 6.5 V 0.15 0.45 mA Tj = 150 °C mA f = 1 MHz 9.2 nF f = 1 MHz 0.58 nF f = 1 MHz 0.27 nF QG VGE = - 8 V.+ 15 V 1200 nC RGint Tj = 25 °C 2.00 td(on) VCC = 300 V IC = 150 A Tj = 150 °C RG on = 4.5 RG off = 4.5 140 ns tr Eon td(off) tf 40 ns 3.8 mJ 385 ns Rth(j-c) per IGBT Rth(j-s) per IGBT ns 6.1 Eoff 40 mJ 0.29 K/W K/W GD © by SEMIKRON Rev. 12 02.12.2008 1 SEMiX151GD066HDs Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 min. typ. max. Unit Tj = 25 °C 1.4 1.6 V Tj = 150 °C 1.4 1.6 V SEMiX®13 0.9 1 1.1 V 0.75 0.85 0.95 V Tj = 25 °C 2.0 2.7 3.3 m Tj = 150 °C rF Tj = 25 °C Tj = 150 °C 3.0 3.7 4.3 m Rth(j-c) IF = 150 A Tj = 150 °C di/dtoff = 3000 A/µs T = 150 °C j VGE = -8 V Tj = 150 °C VCC = 300 V per diode SEMiX151GD066HDs Rth(j-s) per diode Preliminary Data Module IRRM Trench IGBT Modules Qrr Err 155 · Homogeneous Si · Trench = Trenchgate technology · VCE(sat) with positive temperature coefficient · UL recognised file no. E63532 E63532 RCC'+EE' µC 5.8 mJ 0.36 20 res., terminal-chip Rth(c-s) to heat sink (M5) 1 m K/W 3 to terminals (M6) Mt m 0.04 per module Ms TC = 125 °C nH 0.7 TC = 25 °C 5 Nm 2.5 5 Nm Nm Typical Applications w · Matrix Converter · Resonant Inverter · Current Source Inverter Remarks · Case temperature limited to TC=125°C max. · Product reliability results are valid for Tj=150°C · For short circuit: Soft RGoff recommended · Take care of over-voltage caused by stray inductance K/W K/W LCE Features A 24 350 g Temperature sensor R100 Tc=100°C (R25=5 k) 0,493 ±5% k B100/125 B100/125 R(T)=R100exp[B100/125 B100/125(1/T-1/T100 1/T-1/T100)]; T[K]; 3550 ±2% K GD 2 Rev. 12 02.12.2008 © by SEMIKRON SEMiX151GD066HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic © by SEMIKRON Rev. 12 02.12.2008 3 SEMiX151GD066HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 12 02.12.2008 © by SEMIKRON SEMiX151GD066HDs SEMiX 13 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 12 02.12.2008 5