SD-SST211/213/215 SD211DE/SST211 SD211 SD214 SD213DE/SST213 SD215DE/SST215

N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications ·

SD-SST211/213/215 SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications · Ultra-High Speed Switching-tON: 1 ns · Ultra-Low Reverse Capacitance: 0.2 pF · Low Guaranteed rDS @5 V · Low Turn-On Threshold Voltage · N-Channel Enhancement Mode · High-Speed System Performance · Low Insertion Loss at High Frequencies · Low Transfer Signal Loss · Simple Driver Requirement · Single Supply Operation · Fast Analog Switch · Fast Sample-and-Holds · Pixel-Rate Switching · DAC Deglitchers · High-Speed Driver Description The SD211DE/SST211 SD211DE/SST211 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 SD211 may be used for ±5-V analog switching or as a high speed driver of the SD214 SD214. The SD214 SD214 is normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance Linear Integrated Systems and ultra-fast switching speeds. An integrated Zener diode provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability. For similar products see: quad array-SD5000/5400 series, and non-Zener protection-SD210DE/214DE. · 4042 Clipper Court · Fremont, CA 94538 · Tel: 510 490-9160 · Fax: 510 353-0261 Absolute Maximum Ratings (TA = 250C Unless Otherwise Noted) Gate-Drain, Gate-Source Voltage (SD211DE/SST211 SD211DE/SST211) . -30/25 V (SD213DE/SST213 SD213DE/SST213) . -15/25 V (SD215DE/SST215 SD215DE/SST215) . -25/30 V (SD211DE/SST211 SD211DE/SST211 . -0.3/25 V Gate-Substrate Voltagea (SD213DE/SST213 SD213DE/SST213) . -0.3/25 V (SD215DE/SST215 SD215DE/SST215) . -0.3/30 V Drain-Source Voltage (SD211DE/SST211 SD211DE/SST211) . 30 V (SD213DE/SST213 SD213DE/SST213) . 10 V (SD215DE/SST215 SD215DE/SST215) . 20 V Source-Drain Voltage (SD211DE/SST21 SD211DE/SST21) . 10 V (SD213DE/SST213 SD213DE/SST213) . 10 V (SD215DE/SST215 SD215DE/SST215) . 20 V Drain-Substrate Voltage (SD211DE/SST211 SD211DE/SST211) . 30 V (SD213DE/SST213 SD213DE/SST213) . 15 V (SD215DE/SST215 SD215DE/SST215) . 25 V Source-Substrate Voltage (SD211DE/SST211 SD211DE/SST211) . 15 V (SD213DE/SST213 SD213DE/SST213) . 15 V (SD215DE/SST215 SD215DE/SST215) . 25 V Drain Current . 50 mA Lead Temperature (1/16" from case for 10 seconds) . 3000C 3000C Storage Temperature . -65 to 1500C 1500C Operating Junction Temperature . -55 to 1250C 1250C Power Dissipationa . 300 mW Notes: a. Derate 3 mW/0C above 250C Specificationsa Linear Integrated Systems · 4042 Clipper Court · Fremont, CA 94538 · Tel: 510 490-9160 · Fax: 510 353-0261 Specificationsa Notes: a. TA = 250C unless otherwise noted. b. B is the body (substrate) and V(BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Linear Integrated Systems · 4042 Clipper Court · Fremont, CA 94538 · Tel: 510 490-9160 · Fax: 510 353-0261