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Part Manufacturer Description Datasheet BUY
PGA102AG Texas Instruments INSTRUMENTATION AMPLIFIER, 500uV OFFSET-MAX, 1.5MHz BAND WIDTH, CDIP16, HERMETIC SEALED, CERAMIC, DIP-16 visit Texas Instruments
PGA102KP Texas Instruments High Speed Programmable Gain Amplifier 16-PDIP visit Texas Instruments
PGA102KP-BI Texas Instruments INSTRUMENTATION AMPLIFIER, 1500uV OFFSET-MAX, 1.5MHz BAND WIDTH, PDIP8 visit Texas Instruments
PGA102AG-BI Texas Instruments INSTRUMENTATION AMPLIFIER, 500uV OFFSET-MAX, 1.5MHz BAND WIDTH, CDIP16, CERAMIC, DIP-16 visit Texas Instruments
PGA102SG-BI Texas Instruments INSTRUMENTATION AMPLIFIER, 250uV OFFSET-MAX, 1.5MHz BAND WIDTH, CDIP8 visit Texas Instruments
PGA102SG Texas Instruments INSTRUMENTATION AMPLIFIER, 250uV OFFSET-MAX, 1.5MHz BAND WIDTH, CDIP16, HERMETIC SEALED, DIP-16 visit Texas Instruments

SCR GA102

Catalog Datasheet MFG & Type PDF Document Tags

GA101

Abstract: to30A SCRs Nuclear Radiation Resistant, Planar GAI 00 GA101 GA102 FEATURES â'¢ Optimized for , discharge switches. ABSOLUTE MAXIMUM RATINGS GA1DO GA101 GA102 Repetitive Peak Off-State Voltage. V , '¢ lOOi.OlO DIA. 2.54J.204 DIA. H .041*. 005 1.041.127 .028-048 .711-1 22 8-28 GA100 GAIOI GA102 , ] gate bias resistance. DESIGN CONSIDERATIONS 1. Curve 1 shows the off-state current, lDBM of the SCR , '¢ WATERTOWN, MA 02172 TEL. (617) 926-0404 â'¢ FAX (617) 924-1235 8-29 PRINTED IN U.S.A. GA100 GAIOI GA102
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to30A 220O

220S2

Abstract: 220 ohm resistor .â'"65°C to â'"150°C MECHANICAL SPECIFICATIONS GA100 GAI 01 GA102 INCHES MILLIMETERS A .178- 195 DIA , 1.044.127 J .028 - 048 .711-1.22 TO-18 569 UNITRQDE GAIOO GAIOI GA102 ELECTRICAL SPECIFICATIONS (at , à gate bias resistance. DESIGN CONSIDERATIONS 1. Curve 1 shows the off-state current, lDRM of the SCR , PRINTED IN U.S.A. GAIOO GAIOI GA102 5. Max. Gate Trigger Voltage vs. Neutron Dosage Max. Input Trigger , ) 861-6540 TWX (710) 326-6509 â'¢ TELEX 95-1064 571 PRINTED IN U.S.A. GAIOO GAIOI GA102 Holding Current
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220S2 220 ohm resistor
Abstract: GAIOO GA101 GA102 SCRs Nuclear Radiation Resistant, Planar FEA TU R ES DESCRIPTION â , .â'"65°C to +150â'C M ECHANICAL SPECIFICATIO N S 8-28 hllSôbS 0003QQ3 GA102 . 80V GA100 GA101 GA102 ELEC TR IC A L SPECIFICATIO N S (at 25â'˜ C unless notfid) Preradiation , current, l0RM of the SCR as a function of temperature. ID M is increased by radiation damage, R but is , GA102 GA100 Holding Current â'"65 â'" 25 0 25 50 75 GA101 GA102 8. Max -
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CID03004

BY2202

Abstract: st GK 12 M IC O N D U C T O R PRODUCTS GA100 GAIOI GA102 ELECTRICAL SPECIFICATIONS (at 25 , . DESIGN CONSIDERATIONS 1. Curve 1 shows the off-state current, lDRM of the SCR as a function of , the device after the radiation burst. Special circuit approaches such as additional SCR s to crowbar , 9-37 PRINTED IN U.S.A. GAIOO GAIOI GA102 GA100 GAIOI GA102 7. Holding
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BY2202 st GK 12

2n3031

Abstract: TE 555-1 GA200 GA200A GA300 GA300A GA201 GA201A GA301 GA301A GA100 GA101 GA102 2N3027 2N3Q30 ID100 JAN2N3027 , 419 ! SCR 419 419 419 ! 419 ! S e c tio n O rg a n iz a tio n : S ilic o n C o n tro lle d R , SCR-1 http://w w w .m icrosem i.com
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2n3031 TE 555-1 419 on 80 JAN2N3030 JANTX2N3027 JANTX2N3030 2N3028 2N3031 AA100

micronote 103

Abstract: 2n2369 avalanche in other cases single-event latchup (SEL) as a result of a parasitic SCR structure in an IC becoming , . Examples include the 2N3027 to 2N3032, which are radiation tolerant. Also the GA100, GA101, and GA102
Microsemi
Original
UM9441 micronote 103 2n2369 avalanche Semiconductor Nuclear Radiation Detector Semiconductor Radiation Detector DIODE ga101

pin diodes radiation detector

Abstract: 2n2369 avalanche in other cases single-event latchup (SEL) as a result of a parasitic SCR structure in an IC becoming , . Examples include the 2N3027 to 2N3032, which are radiation tolerant. Also the GA100, GA101, and GA102
Microsemi
Original
pin diodes radiation detector radiation ionizing dose TID detector 1N829A 2N2369 2N3725 pin diodes nuclear radiation detector

Microsemi micronote series 050

Abstract: 2N2369 avalanche result of a parasitic SCR structure in an IC becoming energized by an ion strike. Despite these type , 2N3032 which are radiation tolerant. Also the GA100, GA101, and GA102 devices are specifically
Microsemi
Original
Microsemi micronote series 050 Microsemi Generic Diode diode GA100 nuclear radiation detector 2N5153 JANS RH829A

NIKKO NR 9600

Abstract: SEMICON INDEXES triggered devices 4.212 Wmm 5 Surface Mount Diodes and SCR's Identification of surface mount devices , geliefert. Dieser Band behandelt Dioden, gesteuerte Siliziumgleichrichter (SCR), 3- und 4-schichtige Dioden
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NIKKO NR 9600 SEMICON INDEXES varicap serie kv diode SR360 BL diodo ZO 150 69 Diode Equivalent 1ss99

triacs bt 804 600v

Abstract: UR720 ; 3.0W; 3.0W; 3.0W; 3.0W; 3.0W; 20% 10% 5% 20% 10% 5% SCR * * * * 2N876 2N877 , * * * * * * * * * * * * PART N U M B E R SCR ,35A@100°C 150V; 10-18 ,35A@100°C 20CV; TO-18 ,35A@100°C 300V; TO , °C 200V; TO-18 SCR .26A@125°C 30V; TO-18 .26A@125°C 60V; TO-18 .26A@125°C 100V; TO-18 â , IP T IO N T R A N S IS T O R NPN; 5A; 60V; TO-61 NPN; 5A; 45V; TO-61 NPN; 5A; 60V; TO-61 SCR , 2N1883 SCR 91 91 91 91 91 95 95 95 95 95 95 97 97 97 J J J .1 1.25A@100°C 15V
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triacs bt 804 600v UR720 Unitrode discrete databook unitrode 655 BRIDGE rectifier AO110 AA116 diode