NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
EDS-102421 - Datasheet Archive
Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices SCA-6 is a high performance Gallium
SCA-6 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices SCA-6 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 50mA is +30dBm. Product Features High Output IP3 : +30dBm Flat Gain : +/- 0.7dB Over Full Band Cascadable 50 Ohm : 1.5:1 VSWR Patented GaAsHBT Technology Operates From Single Supply Low Thermal Resistance Package These unconditionally stable amplifiers provides 15dB of gain and +14.5dBm of 1dB compressed power and requires only a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for operation. Output IP3 vs. Frequency 32 30 dBm Applications 28 26 PA Driver Amplifier 24 Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite 22 0.1 1 2 3 GHz Sy mbol Parameter Units Frequency Min. Ty p. Max. 14.4 16.0 15.5 15.0 17.6 GP Small Signal Pow er Gain dB dB dB 850 M Hz 1950 M Hz 2400 M Hz GF Gain Flatness dB 0.1-2.0 GHz +/- 0.7 P1dB Output Pow er at 1dB Compression dBm 1950 M Hz 14.5 OIP3 Output Third Order Intercept Point dBm 1950 M Hz 28.0 NF Noise Figure dB 1950 M Hz 5.5 VSWR Input / Output - 0.1-3.0 GHz 1.5:1 Reverse Isolation dB 0.1-3.0 GHz 20 VD Device Operating Voltage V 3.3 3.8 4.3 ID Device Operating Current mA 45 50 55 ISOL dG/dT Device Gain Temperature Coefficient dB/°C -0.0018 RTH, j-l Thermal Resistance (junction to lead) °C/W 510 Test Conditions: VS = 8 V RBIAS = 82 Ohms ID = 50 mA Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-102421 EDS-102421 Rev A Preliminary SCA-6 DC-3 GHz Cascadable MMIC Amplifier Typical Performance at 25° C (Vds = 3.8V, Ids = 50mA) |S21| vs. Frequency |S11| vs. Frequency 18 0 -5 dB 16 dB -10 14 -15 12 -20 0.1 1 2 0.1 3 1 2 3 GHz GHz |S12| vs. Frequency |S22| vs. Frequency -12 0 -5 -16 dB dB -10 -20 -15 -24 -20 0.1 1 2 3 0.1 1 2 3 GHz GHz Output Power vs.Frequency 16 15 dBm 14 13 12 0.1 1 2 3 GHz Typical S-Parameters Vds = 3.8V, Id = 50mA Freq GHz |S11| S11 Ang |S21| S21 Ang |S12| S12 Ang |S22| S22 Ang .100 0.247 125 6.531 148 0.108 -42 0.212 124 .500 0.241 117 6.606 136 0.103 -31 0.206 117 .900 0.256 70 6.397 103 0.102 -55 0.228 71 1.00 0.260 58 6.362 93 0.103 -61 0.235 59 1.50 0.272 3 6.174 52 0.102 -93 0.260 3 2.00 0.265 -50 6.078 10 0.101 -122 0.273 -52 2.50 0.240 -104 5.638 -32 0.104 -153 0.274 -109 0.204 -160 5.343 -70 0.106 172 0.264 -167 3.00 (S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die) 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-102421 EDS-102421 Rev A Preliminary SCA-6 DC-3 GHz Cascadable MMIC Amplifier Absolute Maximum Ratings Typical Biasing Configuration Parameter Absolute Limit Max. Device Current (ID) 75 mA Max. Device Voltage (VD) 6V Max. RF Input Pow er +20 dBm Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C 3.8 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Recommended Bias Resistor Values Supply Voltage (Vs) 5V 7.5V 9V 12V 15V 20V Rbias (Ohms) Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l 20 70 100 160 220 320 Mounting Instructions The data shown was taken on a 31mil thick FR-4 board with 1 ounce of copper on both sides. The board was mounted to a baseplate with 3 screws as shown. The screws bring the top side copper temperature to the same value as the baseplate. Pin Designation 1 RF in 2 1. Use 1 or 2 ounce copper, if possible. 2. Solder the copper pad on the backside of the device package to the ground plane. 3. Use a large ground pad area with many plated throughholes as shown. 4. If possible, use at least one screw no more than 0.2 inch from the device package to provide a low thermal resistance path to the baseplate of the package. 5. Thermal resistance from ground lead to screws is 2 deg. C/W. GND RF out and Bias GND 3 4 Outline Drawing 1 2 4 3 SCA-6 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-102421 EDS-102421 Rev A