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Part Manufacturer Description Datasheet BUY
BQ20Z655EVM Texas Instruments bq20z655EVM and bq34z651EVM SBS 1.1 Impedance Track Technology Enabled EVM visit Texas Instruments
BQ30Z50DBT Texas Instruments SBS 1.1 compliant Gas Gauge with Impedance TrackT version 3.5 38-TSSOP visit Texas Instruments
BQ3050DBTR Texas Instruments SBS 1.1-Compliant 2S to 4S Battery Gas Gauge & Protection 38-TSSOP -40 to 85 visit Texas Instruments
BQ2063DBQ Texas Instruments Li-Ion SBS 1.1 Compliant Gas Gauge With Protector Interface 28-SSOP 0 to 70 visit Texas Instruments
BQ2084DBTR-V150 Texas Instruments SBS v1.1 Compliant Gas Gauge with LED Delay 38-TSSOP -20 to 85 visit Texas Instruments
BQ2085DBTR-V1P3 Texas Instruments SBS-Compliant Gas Gauge IC For Use With The bq29311 38-TSSOP -20 to 85 visit Texas Instruments

SBS thyristor

Catalog Datasheet MFG & Type PDF Document Tags

MBS4991 equivalent

Abstract: SBS thyristor - 0.02 %/°C Typical MBS4991 MBS4992 MBS4993 SBS (PLASTIC) MT2 0- -O MT1 CASE 29-04 CTO , OOTDE^ti bSfi _ Motorola Thyristor Device Data MBS4991 M B S 4992M B S , TEMPERATURE (°C) fc.3fc.7255 DTQHT? STM Motorola Thyristor Device Data 3 -1 2 9 MBS4991 M BS4992 M , 15 V - 10 ms i M IN ' b3b725S 3-130 OO'iOE'iñ 4H0 Motorola Thyristor Device Data , between V s and Vp. FIGURE 9 - TURN-OFF TIME TEST CIRCUIT +V With the SBS in conduction and the
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MBS4991 equivalent SBS thyristor motorola thyristor thyristor device data CTO-226AA MBS49 BS4993 3L72S5

SBS thyristor

Abstract: BS4991 0.02 %/°C Typical MBS4991 MBS4992 MBS4993 SBS (PLASTIC) MT2 O - - O MT1 / MT2 MAXIMUM , Motorola Thyristor Device Data MBS4991 M B S4992 MBS4993 ELECTRICAL CHARACTERISTICS (Ta 25"C unless , ) Motorola Thyristor Device Data 3 -129 M BS4991 M B S 4992 M B S 4993 FIGURE 3 - HOLDING CURRENT , - PEAK O UTPUT VOLTAGE TEST CIRCUIT 3-130 Motorola Thyristor Device Data MBS4991 M B S4992 , and Vp. FIGURE 9 - TURN-OFF TIME TEST CIRCUIT CHARACTERISTICS With the SBS in conduction and the
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MBS4992 equivalent thyristor circuits triac phase control circuits mbs4992 MOTOROLA MBS-4992 TSTA 60/002

diac SBS 14

Abstract: DIAC EQUIVALENT circuit contrast the properties of alternative trigger devices. The closest equivalent to the diac is the SBS. DIAC REPLACEMENT WITH SBS Figures 11 through 14 contrast trigger performance in a simple phase control , gate damping resistance is used. The short high amplitude pulse (Figure 12) of the SBS used without , current above the latching and holding value. To convert to a MBS4991 SBS (Figure 2): R2 = y^vp = 9^7s27 , angle because of the lower SBS voltage. ALTERNATE METHODS OF TRIGGERING Trigger performance is
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1N5760 diac SBS 14 DIAC EQUIVALENT circuit DIAC 1n5760 DIAC EQUIVALENT DIAC application AN964/D

2n2646 equivalent

Abstract: 2N2646 resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNILATERAL AND BILATERAL SWITCHES (SUS, SBS) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"
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2n2646 equivalent triac phase control EQUIVALENT 2N1671 four-layer diode 2N4987 3n84 2N489-494 2N2646-47 2N489-94 2N602 INI4993
Abstract: package is readily adaptable for use in automatic insertion equipment. â'¢ â'¢ â'¢ â'¢ â'¢ SBS , Tstg â'"65 to +150 °C REV 2 Motorola Thyristor Device Data © Motorola, Inc. 1995 1 , Motorola Thyristor Device Data MBS4991 MBS4992 MBS4993 FIGURE 3 â'" HOLDING CURRENT versus TEMPERATURE , Motorola Thyristor Device Data D.U.T. RL 0 V0 3 MBS4991 MBS4992 MBS4993 FIGURE 8 â , VF2 â'"I CHARACTERISTICS With the SBS in conduction and the relay contacts open, close the ON Semiconductor
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MBS4991/D

GE TRIAC SC40B

Abstract: 2n4992 resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNILATERAL AND BILATERAL SWITCHES (SUS, SBS) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"
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SC40B GE TRIAC SC40B 2n4992 transistor 2n4992 2N4992 equivalent triac 9012 2N4992

2n2646 equivalent

Abstract: 2N4991 resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNILATERAL AND BILATERAL SWITCHES (SUS, SBS) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"
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2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 THYRISTOR A2f low voltage scr equivalent transistor of 2n6027

MBS4991 equivalent

Abstract: MBS4992 equivalent package is readily adaptable for use in automatic insertion equipment. · · · · · SBS (PLASTIC , +150 °C REV 2 Motorola Thyristor Device Data © Motorola, Inc. 1995 1 MBS4991 MBS4992 , Motorola Thyristor Device Data MBS4991 MBS4992 MBS4993 FIGURE 3 ­ HOLDING CURRENT versus TEMPERATURE , VOLTAGE TEST CIRCUIT Cc 10 K 15 V Vin 10 ms MIN Motorola Thyristor Device Data D.U.T , .) +V IS2 D.U.T. VS2 IB1 IH2 MT1 VF2 ­I CHARACTERISTICS With the SBS in conduction
Motorola
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5Bp power control Gate Turn-off Thyristor Thyristor Device Data motorola 1/MBS4991 equivalent triac Motorola DATA BOOK motorola triac

2n2646 ujt

Abstract: applications of ujt with circuits Unilateral Switches (SUSs) are Silicon planar, monolithic ICs having thyristor electrical characteristics , Silicon planar, monolithic ICs having the electrical characteristics of a bilateral thyristor. Designed to , triggering at lower voltages. The SBS is ideally suited for half-wave and full-wave triggering in low-voltage , PUT 150 40 0.2-1.6 TO-92 GES6028 PUT 150 40 0.2-0.6 TO-92 2N4991 SBS 175 - 6.0-10.0 TO-98 2N4992 SBS
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MPS2906A GES2646 2n2646 ujt applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 2N6076 MPS2907A 2N4126 MPS-A55 2N4125 MPS-A56
Abstract: a bilateral thyristor. The device is designed to switch at 7 to 9 volts with a 0.01%/°C , Control and Synchronization Applications: £ Trigger Circuits for Thyristor or Triac, Oscillators , EXAMPLES +I EQUIVALENT CIRCUIT THYRISTOR TRIGGER CIRCUIT VT1 T2 LOAD D R 220kâ"¦ -V VR 1Mâ"¦ AC INPUT 100VAC ID2 VS2 CR2AM-8 +V CR IS2 IH2 G C SBS BS08D , A A D2 SBS BS08D C1 0.47 µF 25WV BCR16 HM-8 This circuit is usable in such Powerex
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BS08D-T112 400WV

BS08D-T112

Abstract: SBS thyristor EXAMPLES THYRISTOR TRIGGER CIRCUIT LOAD D R 220k AC INPUT 100VAC VR 1M C 0.1 µF SBS BS08D CR G R2 1k , silicon planar monolithic integrated circuit with the electrical characteristics of a bilateral thyristor , Thyristor or Triac, Oscillators, Timers Ordering Information: BS08D-T112 is tape and fancil packaged (2500 , VT2 -I TRIAC TRIGGER CIRCUIT LOAD VR 220K R1 100 0.25W D2 SBS BS08D C1 0.47 µF 25WV CIRCUIT
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Triac trigger circuit CR2AM CR2AM-8 CR2AM8 T14-2 BS08D equivalent

Triac trigger circuit

Abstract: CR2AM-8 : Trigger Circuits for Thyristor or Triac, Oscillators, Timers Outline Drawing Dimensions , electrical characteristics of a bilateral thyristor. The device is designed to switch at 7 to 9 volts with , 15697-1800 (724) 925-7272 BS08D Silicon Bilateral Switch APPLICATION EXAMPLES THYRISTOR TRIGGER CIRCUIT , 100VAC IH1 IS1 ID2 VS2 -V CR2AM-8 +V CR IS2 G C SBS BS08D 0.1 F IH2 , SYMBOL LOAD T2 VR 200K D1 47 R1 100, 0.25W AC INPUT 100VAC R3 15k (1W) D2 SBS
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silicon bilateral switch thyristor control circuit diagram

Triac trigger circuit

Abstract: SBS thyristor : Trigger Circuits for Thyristor or Triac, Oscillators, Timers Outline Drawing Dimensions , electrical characteristics of a bilateral thyristor. The device is designed to switch at 7 to 9 volts with , 15697-1800 (724) 925-7272 BS08D Silicon Bilateral Switch APPLICATION EXAMPLES THYRISTOR TRIGGER CIRCUIT , 100VAC IH1 IS1 ID2 VS2 -V CR2AM-8 +V CR IS2 G C SBS BS08D 0.1 F IH2 , SYMBOL LOAD T2 VR 200K D1 47 R1 100, 0.25W AC INPUT 100VAC R3 15k (1W) D2 SBS
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TRIAC EQUIVALENT triac dc motor control circuits

silicon bilateral switch

Abstract: BCR16 Synchronization. Applications: £ Trigger Circuits for Thyristor or Triac, Oscillators, Timers 1.27 H , electrical characteristics of a bilateral thyristor. The device is designed to switch at 7 to 9 volts with , Volts APPLICATION EXAMPLES THYRISTOR TRIGGER CIRCUIT STATIC CHARACTERISTICS +I EQUIVALENT , IH1 IS1 ID2 +V IS2 G C SBS BS08D 0.1 F IH2 ID1 VS1 R2 1k VT2 This , 25WV SBS BS08D Triac BCR16 HM-8 This circuit is useable in such applications as lighting
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BS08D-112 T112

BS08D-112

Abstract: silicon bilateral switch Switching Operation Control and Synchronization. Applications: £ Trigger Circuits for Thyristor or , monolithic integrated circuit with the electrical characteristics of a bilateral thyristor. The device is , APPLICATION EXAMPLES THYRISTOR TRIGGER CIRCUIT STATIC CHARACTERISTICS +I EQUIVALENT CIRCUIT VT1 , IS1 ID2 +V IS2 G C SBS BS08D 0.1 F IH2 ID1 VS1 R2 1kî VT2 This , C1 0.47F 25WV SBS BS08D Triac BCR16 HM-8 This circuit is useable in such
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2n2646 equivalent

Abstract: IN5059 resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNILATERAL AND BILATERAL SWITCHES (SUS, SBS) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"
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2N4990 SUS-2N4986 IN5059 SUS 2N4987 2N4987-90 2N4987 equivalent CIRCUITS BY USING 2N6027

2N4983

Abstract: transistor 2N4983 resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNILATERAL AND BILATERAL SWITCHES (SUS, SBS) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"
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2N4983 2N4986 transistor 2N4983 general electric C22B GE C22B scs thyristor GE 2N4992 S-2N4983 2N4963

znr 10k 391

Abstract: TRIAC BCR 1 AM , D4, R1, R3. · Phase control range is 10 to 170°. The thyristor CR trigger phase is controlled , 11.2 Temperature Control Circuit of an Electric Blanket using a Thyristor · Electric blankets of up to approximately 100W can be controlled by a thyristor. · Control by the zero volt switch , of the thyristor CR is set at around zero volt, and the on-off of the device is controlled by the , turned on, Q1 is always turned off and Q2 is always turned on, and the thyristor CR is triggered by
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BS08A znr 10k 391 TRIAC BCR 1 AM znr 10k BCR 3A 400V triac bcr BCR1AM-12

2N4985

Abstract: 2N2646 cross reference resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNILATERAL AND BILATERAL SWITCHES (SUS, SBS) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"
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2N4984 2N4985 GEC32U 2N2646 cross reference GE SCR cross reference SUS 2N4984 I2N2647

2N2646 equivalent

Abstract: SUS-2N4989 resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNILATERAL AND BILATERAL SWITCHES (SUS, SBS) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"
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2N4988 SUS-2N4989 20 amp 800 volt triac 3N81 D5K2 2n4989 047/1F 2N4989 J2N2647
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