SBL2030PT SBL2060PT SBL2035PT SBL2040PT SBL2045PT SBL2050PT 88/540/EEC - Datasheet Archive

 

Vishay Lite­On Power Semiconductor 20A Schottky Barrier Rectifier Features D Schottky barrier chip D Guard ring die

 

SBL2030PT SBL2030PT­SBL2060PT SBL2060PT Vishay Lite­On Power Semiconductor 20A Schottky Barrier Rectifier Features D Schottky barrier chip D Guard ring die constuction for transient protection D Low power loss, high efficiency D High current capability and low forward voltage drop D High surge capability D For use in low voltage, high frequency inverters, 14 414 free wheeling, and polarity protection application D Plastic material ­ UL Recognition flammability classification 94V­0 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage =DC Bl ki voltage DC Blocking lt Test Conditions Type SBL2030PT SBL2030PT SBL2035PT SBL2035PT SBL2040PT SBL2040PT SBL2045PT SBL2045PT SBL2050PT SBL2050PT SBL2060PT SBL2060PT Peak forward surge current Average forward current TC=100°C Junction and storage temperature range Symbol VRRM =VRWM =VR V IFSM IFAV Tj=Tstg Value 30 35 40 45 50 60 250 20 ­65.+150 Unit V V V V V V A A °C Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=10A, TC=25°C TC=25°C TC=100°C Diode capacitance VR=4V, f=1MHz Thermal resistance TL=const. junction to case Reverse current Rev. A2, 24-Jun-98 Type SBL2030PT SBL2030PT­SBL2045PT SBL2045PT SBL2050PT SBL2050PT­SBL2060PT SBL2060PT Symbol Min VF VF IR IR CD RthJC Typ Unit 0.55 0.75 1.0 50 1100 2.5 Max V V mA mA pF K/W 1 (4) SBL2030PT SBL2030PT­SBL2060PT SBL2060PT Vishay Lite­On Power Semiconductor 4000 20 C D ­ Diode Capacitance ( pF ) IFAV ­ Average Forward Current ( A ) Characteristics (Tj = 25_C unless otherwise specified) 16 12 8 4 0 Tj = 25°C f = 1 MHz 1000 100 0 50 100 150 Tamb ­ Ambient Temperature ( °C ) 15373 Figure 1. Max. Average Forward Current vs. Ambient Temperature 0.1 1.0 10 100 VR ­ Reverse Voltage ( V ) 15376 Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 100 100 10 SBL2050PT SBL2050PT­SBL2060PT SBL2060PT 1.0 Tj = 25°C IF Pulse Width = 300 µs 2% Duty Cycle I R ­ Reverse Current ( mA ) IF ­ Forward Current ( A ) SBL2030PT SBL2030PT­SBL2045PT SBL2045PT 0.1 15374 0.3 0.5 0.7 0.9 VF ­ Forward Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage IFSM ­ Peak Forward Surge Current ( A ) Tj = 75°C 1.0 0.1 Tj = 25°C 0.01 0.1 300 15377 0 80 40 120 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage 8.3 ms Single Half­Sine­Wave JEDEC method 250 200 150 100 50 0 1 15375 10 Tj = 100°C 10 100 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 SBL2030PT SBL2030PT­SBL2060PT SBL2060PT Vishay Lite­On Power Semiconductor Dimensions in mm 14470 Case: molded plastic Polarity: as marked on body Approx. weight: 5.6 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) SBL2030PT SBL2030PT­SBL2060PT SBL2060PT Vishay Lite­On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC 88/540/EEC and 91/690/EEC 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98