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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

S9018 transistor

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S9018 transistor

Abstract: S9018 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S9018 TRANSISTOR (NPN) 1.EMITTER FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 2.BASE 3.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter , 180-270 Typical Characteristics S9018 Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
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S9018 transistor transistor S9018 S9018 TO92 S9018 TO-92 S9018* transistor 400MH

s9018 transistor

Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR (NPN) SOT-23 FEATURES AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING:J8 MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current
Jiangsu Changjiang Electronics Technology
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S9018 transistor

Abstract: S9018 M C C TO-92 Plastic-EncapsuSate Transistors S9018 TRANSISTOR(NPN) FEATURES P cm; 0.31W (Tamb=25°C) Icm: 0.05 A V|8R)CB0: 25 V Junction tem perature range T j.T s tg : -5 5 " C to + 150°C ELECTRICAL CHARACTERISTICS (Tam b=25°C u n le s s o th e rw is e s p e c ifie d ) Collector-base breakdown voltage Coilector-emitter breakdown voltage Emitter-base breakdown , Typical Characteristics S9018 H Z U i tr x D O D C O f- o LU o o VcifV]. COLLECTOR-EMITTER
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S9018 transistor

Abstract: S9018 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 3. COLLECTOR MARKINGJ8 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base , S9018 Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR (NPN) SOT-23 FEATURES AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING:J8 MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current Jiangsu Changjiang Electronics Technology
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO â'" 92 S9018 TRANSISTOR (NPN) 1.EMITTER FEATURES High Current Gain Bandwidth Product 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 18 V , S9018 50uA 40uA 4 30uA Ta=100â"ƒ 120 Ta=25â"ƒ 80 40 20uA 2 IB=10uA 0 Jiangsu Changjiang Electronics Technology
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transistor SOT23 J8

Abstract: transistor S9018 Electrical Production specification Silicon Epitaxial Planar Transistor S9018 TYPICAL , BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor S9018 , BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES S9018 Pb High current gain bandwidth product. Lead-free power dissipation.(PC=200mW) APPLICATIONS NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-23 Type No. Marking
BL Galaxy Electrical
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transistor SOT23 J8 S9018 SOT-23 J8 SOT23 S9018 J8 S9018 SOT23 transistor S9018 G BL/SSSTC085 3000/T

g21 Transistor

Abstract: transistor y21 Ic= 5mA S9018 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd NPN EPITAXIAL SILICON TRANSISTOR S9018 MRA154 100 Y11 MRA156 -10 b11 handbook , S9018 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain , of frequency. Common base forward transfer admittance (Y21). S9018 SEMICONDUCTOR
Shandong Yiguang Electronic Joint Stock
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g21 Transistor transistor y21 y11 transistor Y22 SOT23 B1140 transistor y21 sot-23 1100MH S9018LT1 MRA157 MRA150 MRA152 MRA151

transistor S9018

Abstract: s9018 MCC Features · · · · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# S9018 TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.05A Collector-base Voltage 25V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S9018 NPN Silicon Transistors TO-92 A E C Electrical Characteristics @ , =10mAdc, IB =1.0mAdc) Base-Emitter Saturation Voltage (IC=10mAdc, IB =1.0mAdc) Transistor Frequency (IC
Micro Commercial Components
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transistor S9018

Abstract: S9018 MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# S9018 Features · · · · · · TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.05A Collector-base Voltage 25V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S9018 NPN Silicon , SMALL-SIGNAL CHARACTERISTICS fT DIMENSIONS Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f
Micro Commercial Components
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S9018

Abstract: S9018 transistor S9018 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector Max 2.800 3.040 B 1.200 1.400 C 0.890 1.110 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 , -Jun-2004 Rev. B VCE=5V, IC= 5mA f=400MHz 70 600 190 MHz S9018 = J8 Any changing of
SeCoS
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S9018H

Abstract: transistor s9018h MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# S9018 S9018-G S9018-H S9018-I NPN Silicon Transistors TO-92 A E Features · · · · · · · · TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts(Tamb=25OC) of Power Dissipation , OC Marking : S9018 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See , =1.0mAdc) Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) G 70-108 H 97-146 Min 25 18 4.0
Micro Commercial Components
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S9018H transistor s9018h

transistor s9018

Abstract: S9018 to-92 S9018 S9018 TO-92 TRANSISTOR (NPN) FEATURES 1. EMITTER 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25) Collector current ICM: 0.05 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE
WEJ Electronic
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S9018

Abstract: transistor S9018 MCC Features · · · · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# S9018 TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.05A Collector-base Voltage 25V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S9018 NPN Silicon Transistors TO-92 A E C Electrical Characteristics @ , =10mAdc, IB =1.0mAdc) Base-Emitter Saturation Voltage (IC=10mAdc, IB =1.0mAdc) Transistor Frequency (IC
Micro Commercial Components
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transistor S9018

Abstract: S9018 MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# S9018 Features · · · · · · TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.05A Collector-base Voltage 25V Operating and storage junction temperature range: -55OC to +150 OC Marking : S9018 NPN Silicon Transistors TO-92 A E · , ) Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f=400MHz) G 70-108 H 97-146 Min 25 18 4.0 -Max -0.1
Micro Commercial Components
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S9018 SOT-23

Abstract: s9018 SOT-23 Transistor(NPN) S9018 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MARKINGJ8 Dimensions in inches and (millimeters) Value 30 15 5 50 200 150 -55-150 Units V V V mA mW , f=400MHz CLASSIFICATION OF Rank Range hFE L 70-105 H 105-190 SOT-23 Transistor(NPN) S9018 Typical Characteristics -
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S9018 transistor

Abstract: S9018 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 S9018 Features · · · · · · TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.05A Collector-base Voltage 25V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S9018 NPN Silicon Transistors TO-92 A , SMALL-SIGNAL CHARACTERISTICS fT DIMENSIONS Transistor Frequency (IC=5.0mAdc, V CE=5.0Vdc, f
Shanghai Lunsure Electronic
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DATASHEET Transistor BC107 S9018 datasheet

S9018

Abstract: S9018 TO92 FORWARD INTERNATIONAL ELECTRONICS LID. SEMICONDUCTOR ~~ TECHNICAL DATA S9018 NPN EPITAXIAL SILICON TRANSISTOR AM /FM IF AMPLIFIER^LOCAL OSCILLATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=l 100MHz * High Total Power Dissipation : Pc=400mW ABSOLUTE MAXIMUM RATINGS at Tan*=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 30 V Collector-Emitter Volage Vceo 15 V Emitter-Base Voltage Vebo 5 V Collector Curreit Ic 50 mA Collector Dissipation Pc 400 mW Junction
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100MH

S9018 transistor

Abstract: S9018 S9018 PNP EPITAXIAL SILICON TRANSISTOR High Frequency Low Noise Amplifier Application TO-92 Collector Current Ic=-50mA Collector Power Dissipation Pc=400mW High Current Gain Bandwidth Product fT=1,100MHz (Typ) (Ta=25oC) ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 V Collector Current IC 50 Collector Power Dissipation PC 400 mW
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IB-015 h-97

transistor S9018

Abstract: S9018 S9018 TO-92 Plastic-Encapsulate Transistors Transistor(NPN) FEATURES TO-92 Power dissipation o P CM :0.31 W (Tamb=25 C) Collector current I CM :0.05 A Collector-base voltage V (BR)CBO :25 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ELECTRICAL CHARACTERISTICS o (Tamb=25 C unless otherwise specified , I C (mA),COLLECTOR CURRENT S9018 V CE =5V 100 10 1 IC(mA),COLLECTOR CURRENT V
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