S9015 S9014 -100A - Datasheet Archive

 

TO-92 Plastic-Encapsulate Transistors TO-92 S9015 TRANSISTOR (PNP) 1.EMITTER FEATURES High total power dissipation.(PC=0.45W)

 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors TO-92 S9015 S9015 TRANSISTOR (PNP) 1.EMITTER FEATURES High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9014 S9014 2. BASE 3. COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.45 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Symbol Parameter Test conditions Collector-base breakdown voltage V(BR)CBO IC= -100A -100A, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN TYP MAX UNIT -50 V IC= -1mA, IB=0 -45 V V(BR)EBO IE=-100A -100A, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.05 A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.05 A DC current gain hFE VCE=-5V, IC= -1mA IE=0 60 1000 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V fT Transition frequency CLASSIFICATION OF Rank Range VCE=-5V, IC= -10mA 100 f=30MHz MHz hFE(1) A B C D 60-150 100-300 200-600 400-1000 Typical Characteristics S9015 S9015