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MB90F543GSPF-GS-9014 Cypress Semiconductor IC MCU 16BIT 128KB FLASH 100QFP visit Digikey
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Part : SS9014CBU Supplier : Fairchild Semiconductor Manufacturer : Chip1Stop Stock : 29,740 Best Price : $0.0227 Price Each : $0.0227
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Part : SS9014CBU Supplier : Fairchild Semiconductor Manufacturer : element14 Asia-Pacific Stock : 8,149 Best Price : $0.02 Price Each : $0.1260
Part : SS9014CBU Supplier : Fairchild Semiconductor Manufacturer : Farnell element14 Stock : 8,474 Best Price : £0.0250 Price Each : £0.1610
Part : MT2000-3.0-X-40IN-CS9014 Supplier : TE Connectivity Manufacturer : Sager Stock : - Best Price : $7.53 Price Each : $7.53
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S9014 Datasheet

Part Manufacturer Description PDF Type
S9014 AUK NPN Silicon Transistor Original
S9014 Fairchild Semiconductor Pre-Amplifier, Low Level & Low Noise Original
S9014 Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original
S9014 Micro Commercial Components NPN Silicon Transistor Original
S9014 Micro Commercial Components TRANS GP BJT NPN 45V 0.1A 3TO-92 Original
S9014 Weitron NPN General Purpose Transistors Original
S9014 N/A Cross Reference Datasheet Scan
S9014 N/A SOT-23 Plastic-Encapsulate Transistors Scan
S9014A Micro Commercial Components TRANS GP BJT NPN 45V 0.1A 3TO-92 Original
S9014A N/A Cross Reference Datasheet Scan
S9014AMMO Micro Commercial Components TRANS GP BJT NPN 45V 0.1A 3TO-92 T/R Original
S9014B Micro Commercial Components TRANS GP BJT NPN 45V 0.1A 3TO-92 Original
S9014B N/A Cross Reference Datasheet Scan
S9014C N/A Cross Reference Datasheet Scan
S9014C1 Micro Commercial Components TRANS GP BJT NPN 45V 0.1A 3TO-92 Original
S9014C2 Micro Commercial Components TRANS GP BJT NPN 45V 0.1A 3TO-92 Original
S9014C-TS01 Micro Commercial Components TRANS GP BJT NPN 45V 0.1A 3TO-92 Original
S9014D Micro Commercial Components TRANS GP BJT NPN 45V 0.1A 3TO-92 Original
S9014LT1 Weitron NPN General Purpose Transistors Original
S9014LT1 N/A SOT-23 Plastic-Encapsulate Transistors Scan
Showing first 20 results.

S9014

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: S9014 Pb Complementary To S9015. Lead-free Excellent HFE Linearity. Power dissipation.(PC , S9014 Package Code J6 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol , Production specification Silicon Epitaxial Planar Transistor S9014 ELECTRICAL CHARACTERISTICS @ Ta , Planar Transistor S9014 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document , Silicon Epitaxial Planar Transistor S9014 PACKAGE OUTLINE Plastic surface mounted package SOT BL Galaxy Electrical
Original
transistor SOT23 J6 Transistor S9014 transistor SOT-23 marking code J6 S9014 sot-23 J6 s9014 equivalent s9014 TRANSISTOR BL/SSSTC083 3000/T
Abstract: S9014 NPN General Purpose Transistors TO-92 * â'Gâ' Lead(Pb)-Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage , S9014 WEITRON Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Symbol , http://www.weitron.com.tw S9014 FIG.1 FIG.3 WEITRON http://www.weitron.com.tw FIG.2 FIG.4 S9014 unit:mm TO-92 Outline Dimensions E H TO-92 Dim A B C D E G H J K Weitron
Original
270TYP
Abstract: S9014 3 * â'Gâ' Lead(Pb)-Free 1 2 SOT-23 V CEO Value 45 50 5.0 100 200 1.6 625 S9014=J6 45 0.1 50 100 100 E=45 Vdc, I E= 0 ) 50 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u S9014 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit hFE 200 1000 - , CURRENT GAIN I C , COLLENTOR CURRENT(mA) S9014 I B =140uA I B =120uA 70 I B =100uA 60 Weitron
Original
Abstract: S9014 NPN General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base , =0) IEBO - 0.1 uAdc WEITRON http://www.weitron.com.tw S9014 WEITRON Electrical , Range 60-150 100-300 200-600 400-1000 WEITRON http://www.weitron.com.tw S9014 FIG.1 FIG.3 WEITRON http://www.weitron.com.tw FIG.2 FIG.4 S9014 unit:mm TO-92 Outline Weitron
Original
S9014 TO92 S9014 datasheet S9014 TRANSISTORS S-9014
Abstract: S9014 3 1 2 SOT-23 V CEO Value 45 50 5.0 100 200 1.6 625 S9014=J6 45 0.1 50 100 100 E=45 Vdc, I E= 0 ) 50 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u S9014 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit hFE 200 1000 - ON CHARACTERISTICS , CURRENT(mA) S9014 I B =140uA I B =120uA 70 I B =100uA 60 I B =80uA 50 I B =60uA Weitron
Original
S9014-J6 S9014 SOT-23 s9014 data S9014-3
Abstract: S9014 NPN Silicon Pre-Amplifier, Low Level & Low Noise Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector PCM : 0.2 W Collector Current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V 1 Tj, Tstg : - 55 , DEVICE MARKING: S9014 =J6 http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 1 of 2 S9014 NPN Silicon Low Frequency, Low Noise SeCoS
Original
2s9014 S9014 J6 2s9014- 450-100 450-1
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR (NPN) 1. BASE FEATURES Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO , L H 200-450 450-1000 Typical Characteristics S9014 Jiangsu Changjiang Electronics Jiangsu Changjiang Electronics Technology
Original
Abstract: MCC Features · · · · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# S9014 TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S9014 NPN Silicon Transistors TO-92 A E Pin Configuration C BE B Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Base Breakdown Micro Commercial Components
Original
NPN Transistor S9014
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR (NPN) 1. BASE FEATURES Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO , hFE L H 200-450 450-1000 A,Apr,2011 Typical Characteristics S9014 A,Apr,2011 Jiangsu Changjiang Electronics Technology
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR (NPN) 1. EMITTER FEATURES High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 2. BASE 3. COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base , 400-1000 Typical Characteristics S9014 Jiangsu Changjiang Electronics Technology Jiangsu Changjiang Electronics Technology
Original
transistor -s9014 transistor TO-92 S9015
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# S9014 S9014-B S9014-C S9014-D NPN Silicon Transistors TO-92 A E Features · · · · · · · · TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Marking : S9014 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering Micro Commercial Components
Original
Abstract: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# S9014 Features · · · · · · TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S9014 NPN Silicon Transistors TO-92 Pin Configuration Bottom View C B E A E Electrical Characteristics @ 25OC Unless Otherwise Specified Micro Commercial Components
Original
transistor npn s9014
Abstract: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# S9014 Features · · · · · · TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S9014 NPN Silicon Transistors Pin Configuration TO-92 A C E BE Electrical Characteristics @ 25OC Unless Micro Commercial Components
Original
transistor TO-92 S9014 transistor s9014 TO 92
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR (NPN) 1. BASE FEATURES Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage , Characteristics S9014 Jiangsu Changjiang Electronics Technology Jiangsu Changjiang Electronics Technology
Original
marking J6 s9015 SOT23 transistor j6 sot23 marking J6 transistors SOT23 J6 J6 SOT 23
Abstract: S9014(NPN) TO-92 Bipolar Transistors 1. EMITTER 2. BASE 3. COLLECTOR TO-92 Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction , Range hFE(1) A 60-150 B 100-300 C 200-600 D 400-1000 S9014(NPN) TO-92 Bipolar Transistors -
Original
Abstract: MCC Features · · · · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# S9014 TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S9014 NPN Silicon Transistors TO-92 A E Pin Configuration C BE B Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Base Breakdown Micro Commercial Components
Original
Abstract: S9014 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage , 450-1000 S9014 SOT-23 Transistor(NPN) Typical Characteristics - -
Original
J6 transistor j6 transistor sot-23 SOT-23 j6 SOT-23 J6 transistor base of s9014 transistor J6 marking transistor sot-23
Abstract: S9014 TRANSISTOR (NPN) 2.92 MIN FEATURES 0.4 W (Tamb=25) Collector current ICM: 0.1 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 4.32 5.33 12.7 6.35 MIN MIN 0.41 0.41 0.53 0.48 Seating Plane Power dissipation PCM: 1.25MAX S9014 4.45 5.21 3.43 MIN 2.41 2.67 3.18 4.19 2.03 2.67 2.03 2.67 1.14 1.40 TO-92 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless WEJ Electronic
Original
s9014 transistor datasheet s9014transistor
Abstract: S9014»J6 II jClMCAlr t.- HARACTKltlSTTCS CftarartarlatK« à|iiW Un Man Unil OIT C :i 1A EtAiTTEUFTTCS ,  S9014 NPN General Purpose Transistors % j V! K â  SOT-2J MAXIMUM XATlKCiS STr^bri YJIU* Unh Cdodar-Emnor '.'â :â ! :.i y- VÇÇ0 « Ytt vcw SQ V« EmÃMi-B*!» VÛf-lrÇG VEÃ0 VBc tefcdof ÙirrarlitKTtliMHM 1 fe 100 nMe TrtlKli CBUACliOUmCS n^M if ci r. _u- , rp-i-i (j^o rt iO-ifiâ m S9014 ELECTRJCÃ'LCHARACTERISTICS (Ta.=25vC unless otherwise noted -
OCR Scan
59014 59014 transistor 59014 c MS9014
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR (NPN) 1. EMITTER FEATURES High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 , 200-600 400-1000 A,Apr,2011 Typical Characteristics S9014 A,Apr,2011 Jiangsu Changjiang Jiangsu Changjiang Electronics Technology
Original
Abstract: TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. BASE 0.4 W (Tamb=25â"ƒ) 3. COLLECTOR Collector current 0.1 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55â"ƒ to +150â"ƒ ELECTRICAL CHARACTERISTICS (Tamb=25â"ƒ Parameter Symbol , ) Rank Range A B C D 60-150 100-300 200-600 400-1000 S9014 Admissible power Bytes
Original
BR 9014 BR 9014 c BR 9014 transistor TRANSISTOR 9014 transistors BR 9014 V. 9014 c
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# S9014 Features · · · · · · TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Marking : S9014 NPN Silicon Transistors TO-92 A E · Case Material: Molded Plastic. Classification Rating 94V-0 UL Flammability C O B Micro Commercial Components
Original
Abstract: S9014 TO-92 Plastic-Encapsulate Transistors Transistor(NPN) FEATURES TO-92 Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :0.1 A Collector-base voltage V (BR)CBO :50 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C 1.EMITTER 2.BASE 3.COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS o (Tamb=25 C unless otherwise specified , S9014 I B =160uA I B =140uA I B =120uA 80 70 I B =100uA 60 I B =80uA 50 I B -
Original
Showing first 20 results.