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Part : IL-AG5-10P-S3T2 Supplier : JAE Manufacturer : Interstate Connecting Components Stock : 516 Best Price : $0.7521 Price Each : $0.8775
Part : PS3T20-3X Supplier : Anderson Power Products Manufacturer : PEI Genesis Stock : 48 Best Price : $1.49 Price Each : $1.74
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Part : AAT4280IJS-3-T1 Supplier : Skyworks Solutions Manufacturer : Richardson RFPD Stock : 6,000 Best Price : $0.13 Price Each : $0.13
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Part : 140077 - XN-S3T-SBB Supplier : Eaton Electronics Manufacturer : Shortec Electronics Stock : 400 Best Price : - Price Each : -
Part : 140079 - XN-S3T-SBC Supplier : Eaton Electronics Manufacturer : Shortec Electronics Stock : 400 Best Price : - Price Each : -
Part : 826462 - SD-WMS 3 TOOL Supplier : Phoenix Contact Manufacturer : Shortec Electronics Stock : - Best Price : - Price Each : -
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S3T31

Catalog Datasheet MFG & Type PDF Document Tags

Marking G1s

Abstract: 199 â  BF992R tt,S3T31 0D53ti2M SIS â  APX N AUER PHILIPS/DISCRETE b7E » RATINGS
-
OCR Scan
Marking G1s S3131 200MH

2N3820

Abstract: bfc>S3T31 Q03Sfl4fl STO -V os = 10 V Vgs = o f = 10 MHz -V os = 10 V Vgs = o f = 1 kHz 0.7
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OCR Scan
2N3820 MBB181 003SA4 MGM009

MB8114

Abstract: BF246 bt,S3T31 005350? 552 â  APX N AMER PHILIPS/DISCRETE b?E D BF246A to C BF247A to C N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical n-channel planar epitaxial junction field-effect transistors in plastic TO-92 variants, intended for VHF and UHF amplifiers, mixers and general purpose switching. QUICK REFERENCE DATA Drain-source voltage ±vDS max. 25 V Total power dissipation up to Tamb = 25 °C ptot max. 250 mW Drain current VDS= 15 V; VGS=0 A B C 'dss min. max. 30 80 60 140 110 250
-
OCR Scan
BF246 MB8114 8F247

PHS1101

Abstract: PHS1102 PHS1101 SERIES N AMPR PHILIPS/DISCRETE ⡠bE » bt>S3T31 OOllbö? 7 T- OZ-/S- EPITAXIAL AVALANCHE RECTIFIERS The PHS1101 series devices are giass-passivated epitaxial silicon rectifier diodes in hermetically sealed glass envelopes. These devices feature low forward voltage drop, ultra fast recovery, very low stored charge, soft recovery switching characteristics and are capable of absorbing reverse transient energy. These properties make the diodes very suitable for use in switched-mode power supplies and
-
OCR Scan
PHS1102 PHS1103 7Z77551 53T31 T-03- 7Z88043

BSP15

Abstract: BSP19 N AMER PHILIPS/DISCRETE 64 Surface Mount Devices BSE D bfc>S3T31 Q01b24S 5 HIGH VOLTAGE TRANSISTORS (cont.) TYPE PACKAGE â'¢ â'¢ ' RATINGS hFE VcE(sat) ' :; fr ' typ: mh2 PINOUT SEE SECTION Vt ; VCEQ V VcBO Â¥ 'c mA minimax, at Iq/Vce mA/V " max.atlc% V mA/mA NPN (cont.) bf622 sot-89 250 250 20 50/- 25/20 0.6 30/5 60 f bf722 sot-223 250 250 50 50/- 25/20 0.6 30/5 60 r bf822 sot-23 250 250 50 50/- 25/20 0.6 30/5 60 f bsp20 sot-223 250 300 1000 40/160 30/10 0.5 20/2 50 r bst40 sot
-
OCR Scan
BSP15 BSP19

615CT

Abstract: 620CT apply to each diode. 684 July 1987 N AMER PHILIPS/DISCRETE OLE D bt>S3T31 ODlltb? 1 Very fast
-
OCR Scan
615CT 620CT KHR605CT IEC134 PHR605CT M801 PKR605CT T0-220
Abstract: N AMER P H X L X P S / D X S C R E T E 'IV V ^ *M A .vlu O % S7D D bt,S3T31 ' 1 QDD7Q7fl fc , C E R A M IC STRI INLINE RF TR A N SISTO R S r. . M ILITARY ' INSTRUMENTATION CO M M UNICATIO NS -
OCR Scan
PAC-70 BFQ23C BFQ51C PAC-85 PAC-100

PZB16035U

Abstract: discrete transistor amplifier 2.5 ghz Manufacturer N AMER PHILIPS/DISCRETE dt.E D â  bt>S3T31 00151S7 i Microwave power transistor PZB16035U T
-
OCR Scan
discrete transistor amplifier 2.5 ghz Q01S1S3 PZB16 F057C FO-57C 0G151SL T-33-//
Abstract: ,S3T31 DQ1S033 T LWE2015R 7^33-c>5 â'" Fig. 5 Output power versus source power. Conditions for -
OCR Scan
FO-93

BDX96

Abstract: May 1988 â  bfc>S3T31 0Q2Q033 S Silicon epitaxial-base power transistors N AMER PHILIPS
-
OCR Scan
BDX96 BDX92 BDX94 BDX91 BDX95 T-33-21
Abstract: transistor ObE D â  bt . S3T31 0 0 1 4 4 b 4 3 â  BUZ73 â'" T-39-11 150 -
OCR Scan
Abstract: D bt)S3T31 0026353 2^0 « A P X Product S pecification P hilips Sem iconductors BU2508D -
OCR Scan
BU2S08D

BC56C

Abstract: BC560 BC559 BC560 b«ÌE D bt,S3T31 DD27SÃ"2 TTS IAPX RATINGS Limiting values in accordance with the
-
OCR Scan
BC56C BC 559 philips BC 560 philips BC559A BC559B BC560B 0QE75 NECC-C-002 200HZ

BGY22A

Abstract: BGY22 bt,S3T31 0013E5Ã 7 T-74-09-01 U.H.F, power amplifier modules X BGY22 BGY22A CHARACTERISTICS Th
-
OCR Scan
T-74-09-0 0D13257 BGV22A DD13531

BUW32

Abstract: BUW132 tracer). January 1988 511 N AMER PHILIPS/DISCRETE BUW132 SERIES 2SE D â  bfc>S3T31 001^032 1 â
-
OCR Scan
BUW132H BUW32 132h BUW132A L100 T-13-/S T-33- T-33-13 7Z81016 7Z21439
Abstract: BDT41B;C 25E D bt,S3T31 QQn? lb b â  , - T-33-11 V|M ~ 12V RB = 270 S 2 -
OCR Scan
BDT41 TIP41 BDT42 BDT41A T-33-1

BD239

Abstract: tp 9054 BD239B; BD239C ESE D bfc>S3T31 0011304 7 T-33-09 RATINGS Limiting values in accordance with the
-
OCR Scan
BD239 BD239A IBD239B BD240 BD240C tp 9054 B0239A b0239c T-3S-07

BSJ110

Abstract: BSJ109 Material 349 Copyrighted By Its Respective Manufacturer â I t.t,S3T31 Cm237Sb TOB hi APX Philips
-
OCR Scan
BSJ108 BSJ109 BSJ110 BSJ11Q
Abstract: 500 ms 7Z78131 Fig. 3 Switching times test circuit. Y Lt,S3T31 OOSM^Ofc. 03S October -
OCR Scan
TIP31 TIP31B 0D34T07 0034T0 T1P31

BFQ234

Abstract: BFQ254 Semiconductors ^ bt>S3T31 DD3171tj 440 â  APX Product specification NPN 1 GHz video transistor BFQ234; BFQ234/I
-
OCR Scan
BFQ254 UBB364 SOT-172A 244D-01 BFQ254/I DD3171 UBBS80 MBB434
Abstract: 199 â  BF992R tt,S3T31 0D53ti2M SIS â  APX N AUER PHILIPS/DISCRETE b7E » RATINGS -
OCR Scan
BFQ162 MBB896 UBB43S
Abstract: bt,S3T31 005350? 552 â  APX N AMER PHILIPS/DISCRETE b?E D BF246A to C BF247A to C N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical n-channel planar epitaxial junction field-effect transistors in plastic TO-92 variants, intended for VHF and UHF amplifiers, mixers and general purpose switching. QUICK REFERENCE DATA Drain-source voltage ±vDS max. 25 V Total power dissipation up to Tamb = 25 °C ptot max. 250 mW Drain current VDS= 15 V; VGS=0 A B C 'dss min. max. 30 80 60 140 110 250 -
OCR Scan
S3331 PRLL4001 PRLL4002 7Z95937

T120 Switch

Abstract: FBR1 ObE D â  bt,S3T31 DD14aoa 7 ~~ BUZ307 " T-39-11 RATINGS Limiting values in accordance with the
-
OCR Scan
BUK457-450B T0220AB T120 Switch FBR1 00205S0 T0220

V103 TRANSISTOR

Abstract: transistor k 3911 ,S3T31 DQ1S033 T LWE2015R 7^33-c>5 â'" Fig. 5 Output power versus source power. Conditions for
-
OCR Scan
V103 TRANSISTOR transistor k 3911 V103 K 3911 T0218AA 0014SD7
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