S350P 88/540/EEC 91/690/EEC D-74025 - Datasheet Archive

 

Vishay Semiconductors Silicon NPN Phototransistor Description S350P is a high sensitive silicon NPN epitaxial planar

 

S350P S350P Vishay Semiconductors Silicon NPN Phototransistor Description S350P S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center­to­center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of unlimited size. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters with lp > 850nm. Features D D D D D High radiant sensitivity 94 8640 Miniature T­¾ flat plastic package with IR filter Very wide angle of half sensitivity = ± 40° Suitable for near infrared radiation Suitable for 0.1" (2.54 mm) center­to­center spacing Applications Detector in electronic control and drive circuits Absolute Maximum Ratings Tamb = 25_C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Document Number 81543 Rev. 2, 20-May-99 Test Conditions x tp/T = 0.5, tp 10 ms Tamb 55 °C x t x3s Symbol VCEO VECO IC ICM Ptot Tj Tstg Tsd RthJA Value 32 5 50 100 100 100 ­55.+100 260 450 Unit V V mA mA mW °C °C °C K/W www.vishay.com 1 (5) S350P S350P Vishay Semiconductors Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Collector Light Current Test Conditions IC = 1 mA Symbol V(BR)CE Min 32 Typ Max Unit V 2 6 1 200 nA pF mA O VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E=0 Ee = 1 mW/cm2, l = 950 nm, VCE = 5 V ICEO CCEO Ica 0.2 lp l0.5 VCEsat ±40 925 860.990 W ton 6 ms W toff 5 ms W fc 110 kHz Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Ee = 1 mW/cm2, Voltage l = 950 nm, IC = 0.1 mA Turn­On Time VS = 5 V, IC = 5 mA, RL = 100 Turn­Off Time VS = 5 V, IC = 5 mA, RL = 100 Cut­Off Frequency VS = 5 V, IC = 5 mA, RL = 100 0.3 deg nm nm V Typical Characteristics (Tamb = 25_C unless otherwise specified) 104 I CEO ­ Collector Dark Current ( nA ) P tot ­ Total Power Dissipation ( mW ) 125 100 75 RthJA 50 25 103 VCE=20V 102 101 100 0 0 20 40 60 80 Tamb ­ Ambient Temperature ( °C ) 94 8308 Figure 1. Total Power Dissipation vs. Ambient Temperature www.vishay.com 2 (5) 100 20 94 8260 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) Figure 2. Collector Dark Current vs. Ambient Temperature Document Number 81543 Rev. 2, 20-May-99 S350P S350P C CEO ­ Collector Emitter Capacitance ( pF ) Vishay Semiconductors I ca rel ­ Relative Collector Current 2.0 1.8 VCE=5V Ee=1mW/cm2 l=950nm 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 12 8 4 0 0.1 100 10 Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage 12 m t on / t off ­ Turn on / Turn off Time ( s ) 10 1 VCE ­ Collector Emitter Voltage ( V ) 94 8247 Figure 3. Relative Collector Current vs. Ambient Temperature Ica ­ Collector Light Current ( mA ) f=1MHz 16 100 Tamb ­ Ambient Temperature ( °C ) 94 8239 20 1 0.1 VCE=5V l=950nm 0.01 0.001 0.01 mW / cm2 ) 6 ton 4 toff 2 Ee=1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 0.1 mW/cm2 l 0.1 1 10 VCE ­ Collector Emitter Voltage ( V ) Figure 5. Collector Light Current vs. Collector Emitter Voltage Document Number 81543 Rev. 2, 20-May-99 8 12 16 IC ­ Collector Current ( mA ) 1.0 0.8 0.6 0.4 0.2 0 700 0.01 0.1 4 Figure 7. Turn On/Turn Off Time vs. Collector Current S ( ) rel ­ Relative Spectral Sensitivity l=950nm 1 0 94 8253 10 Ica ­ Collector Light Current ( mA ) 8 10 1 Figure 4. Collector Light Current vs. Irradiance 94 8256 W l 0 0.1 Ee ­ Irradiance ( 94 8255 VCE=5V RL=100 =950nm 10 100 94 8261 800 900 1000 1100 l ­ Wavelength ( nm ) Figure 8. Relative Spectral Sensitivity vs. Wavelength www.vishay.com 3 (5) S350P S350P Vishay Semiconductors S rel ­ Relative Sensitivity 0° 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8257 Figure 9. Relative Radiant Sensitivity vs. Angular Displacement Dimensions in mm 96 12188 www.vishay.com 4 (5) Document Number 81543 Rev. 2, 20-May-99 S350P S350P Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC 88/540/EEC and 91/690/EEC 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81543 Rev. 2, 20-May-99 www.vishay.com 5 (5) Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1