S2551 KSPDB0173EA KSPDB0053EB KSPDB0175EA KSPDB0174EA KSPDB0176EA KSPDA0116EA

Si photodiode S2551 For visible to infrared precision photometry S2551 is a Si photodiode having a long active area of 1.2

PHOTODIODE Si photodiode S2551 S2551 For visible to infrared precision photometry S2551 S2551 is a Si photodiode having a long active area of 1.2 × 29.1 mm, designed for visible to infrared precision photometry. Features Applications l Long, narrow active area: 1.2 × 29.1 mm l High sensitivity l Low capacitance l Analytical instruments l Optical measurement equipment s Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 30 -20 to +60 -20 to +80 s Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Temperature coefficient of I, Rise time Terminal capacitance Shunt resistance Noise equivalent power Symbol p S Isc ID TCID tr Ct Rsh NEP Condition =p =663 nm 100 lx VR=10 mV VR=0 V, RL=1 k VR=0 V, f=10 kHz VR=10 mV Min. 24 0.01 - Unit V °C °C Typ. 320 to 1060 920 0.6 0.37 30 1.15 0.6 350 0.03 3.9 × 10-14 Max. 1 - Unit nm nm A/W A/W µA nA times/°C µs pF G W/Hz1/2 S2551 S2551 Si photodiode s Photo sensitivity temperature characteristic s Spectral response (Typ. Ta =25 °C) PHOTO SENSITIVITY (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 190 400 600 800 (Typ. ) +1.5 TEMPERATURE COEFFICIENT (%/°C) 0.7 +1.0 +0.5 0 -1.5 190 1000 WAVELENGTH (nm) 400 600 800 1000 WAVELENGTH (nm) KSPDB0173EA KSPDB0173EA KSPDB0053EB KSPDB0053EB s Dark current vs. reverse voltage s Rise time vs. load resistance (Typ. Ta=25 °C, VR=0 V) 1 ms 100 µs 1 nA DARK CURRENT RISE TIME (Typ. Ta=25 °C) 10 nA 10 µs 1 µs 100 pA 10 pA 100 ns 1 pA 10 ns 102 103 104 100 fA 0.01 105 0.1 1 10 REVERSE VOLTAGE (V) LOAD RESISTANCE () KSPDB0175EA KSPDB0175EA KSPDB0174EA KSPDB0174EA s Shunt resistance vs. ambient temperature s Dimensional outline (unit: mm) (Typ. VR=10 mV) 1 T 40.0 ± 0.7 29.1 1.2 10 G ACTIVE AREA 1.2 × 29.1 100 M 0.5 3.2 ± 0.2 1 G PHOTOSENSITIVE SURFACE 10 M 13 SHUNT RESISTANCE 100 G 3.0+0 - 0.3 33.1 ± 0.7 1 M 33.1 ± 0.7 100 k 10 k -20 0.45 LEAD 0 20 40 60 80 AMBIENT TEMPERATURE (°C) KSPDB0176EA KSPDB0176EA The resin coating may extend a maximum of 0.1 mm beyond the upper surface of the package. KSPDA0116EA KSPDA0116EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1027E01 KSPD1027E01 Mar. 2001 DN