S-90P0332SUA UP003-A S-90P0332SUA-TF S-90P0112SMA-TF S-90P0222SUA-TF - Datasheet Archive

 

P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state

 

Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA S-90P0332SUA The S-90P0332SUA S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection diode is built in as a countermeasure for static electricity. Small SOT-89-3 package realize high-density mounting. This product can be driven directly by a -2.5 V power source. If use this product in combination with SII switching regulator products, you can get the highest performance. Features · Low on-state resistance: · Ultra high-speed switching · Operational voltage: · Built-in gate protection diode · Small package: RDS(on)1 = 0.14 Max. (VGS = -4.5 V, ID = -1.5 A) RDS(on)2 = 0.24 Max. (VGS = -2.5 V, ID = -1.5 A) -2.5 V drive available SOT-89-3 Applications · Notebook PCs · Cellular and portable phones · On-board power supplies Packages · SOT-89-3 (Package drawing code: UP003-A UP003-A) Item code · Item code · Delivery form : S-90P0332SUA-TF S-90P0332SUA-TF : Taping only Seiko Instruments Inc. 1 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA S-90P0332SUA Rev.1.0_01 Pin Configuration Table SOT-89-3 Top view 1 2 Pin No. 1 2 3 1 Symbol G D S Description Gate pin Drain pin Source pin 3 Figure 1 Equivalent Circuit D (Drain) Body Diode G (Gate) Gate Protection Diode S (Source) Figure Caution The diode connected between the gate and source of the transistor serves as a protector against electrostatic discharge. Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in gate protection diode. And when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2 Absolute Maximum Ratings Table Item Drain to source voltage (When between gate and source short circuits) Gate to source voltage (When between drain and source short circuits) Drain current (DC) Drain current (Pulse) Reverse drain current Power dissipation *1, *2 Channel temperature Storage temperature 2 (Ta = 25°C unless otherwise specified) Conditions Ratings Unit Symbol VDSS VGS = 0 V -20 VGSS VDS = 0 V ±12 ID IDP IDR PD Tch Tstg PW = 10 µs, Duty Cycle1% -2.5 -10 -2.5 2.5 150 -55 to +150 V A W °C Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. *1. Mounted on a ceramics board (1225 mm2 × 1 mm) *2. The allowable power dissipation differs depending on the mounting form. 2 Seiko Instruments Inc. P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA S-90P0332SUA Rev.1.0_01 Electrical Characteristics DC characteristics Table Item Symbol Drain cut-off current Gate to source leakage current Gate to source cut-off voltage Drain to source on-state resistance *1 IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 |Yfs| Vf Forward transfer admittance *1 Body drain diode forward voltage 3 (Ta = 25°C unless otherwise specified) Min. Typ. Max. Unit -10 µA VDS = -20 V, VGS = 0 V VGS = ±12 V, VDS = 0 V ±10 V -0.5 -1.2 ID = -1 mA, VDS = -10 V 0.11 0.14 ID = -1.5 A, VGS = -4.5 V 0.17 0.24 ID = -1.5 A, VGS = -2.5 V 3.9 S ID = -1.5 A, VDS = -10 V V -0.8 -1.1 If = -2.5 A, VGS = 0 V Conditions *1. Effective during pulse test (600 µs). Dynamic characteristics Table Item Input capacitance Output capacitance Feedback capacitance Symbol Ciss Coss Crss 4 (Ta = 25°C unless otherwise specified) Min. Typ. Max. Unit 350 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 110 85 Conditions Seiko Instruments Inc. 3 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA S-90P0332SUA Rev.1.0_01 Switching characteristics Table Item Symbol Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf D.U.T. PG. RL 5 (Ta = 25°C unless otherwise specified) Min. Typ. Max. Unit 15 ns VGS = -5 V, ID = -1.5 A, 75 VDD = -10 V 145 140 Conditions 0 VGS Wave Form 10 % VGS 90 % VDD 0 0 VDS Wave Form 10 % 10 % VDS 90 % 90 % VGS td(on) tr td(off) tf = 10 µs Duty Cycle 1 % Figure 3 Table 6 Thermal characteristics Item Thermal resistance (Channel to ambience) Symbol Rth(ch-a) (Ta = 25°C unless otherwise specified) Min. Typ. Max. Unit Conditions Mounted on a ceramics board (1225 mm2 × 1 mm) 50 °C/W Precautions · The application conditions for the input voltage, output voltage, and load current should not exceed the allowable power dissipation after mounting. · SII claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. 4 Seiko Instruments Inc. P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA S-90P0332SUA Rev.1.0_01 Typical Characteristics DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulse test (600 µs), Ta = 25°C DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE Pulse test (600 µs), VDS = -10 V ­10 ­10 ­9 ­4.5 V ­4.0 V ­3.5 V ­8 ­7 ­3.0 V ­6 ­2.5 V ­5 ­4 ­3 ­6 0 ­0.5 ­4 ­3 ­2 ­2.0 ­2.5 ­3.0 0 Drain to Source Voltage VDS [V] 0.35 0.30 ID = ­2.5 A 0.20 ­1.5 A 0.10 0.05 0 0 ­2 ­6 ­4 0.1 0.01 ­4.5 V 0 ­2 ­4 ID = ­2.5 A ID = ­1.5 A 0.15 ID = ­1.5 A, ­2.5 A 0.05 VGS = ­4.5 V ­8 ­10 GATE TO SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE VDS = -10 V, ID = -1 mA 0.4 0.3 0.2 0.1 0 ­0.1 ­0.2 ­0.3 ­0.4 0 ­50 ­25 Gate to Source Cut-off Voltage Variance VGS(off) Variance [V] Drain to Source On-State Resistance RDS(on) [] 0.30 0.10 ­6 Drain Current ID [A] 0.35 VGS = ­2.5 V ­4 VGS = ­2.5 V ­10 ­8 DRAIN TO SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Pulse test (600 µs) 0.20 ­3 1 Gate to Source Voltage VGS [V] 0.25 ­2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulse test (600 µs), Ta = 25°C Drain to Source On-State Resistance RDS(on) [] Drain to Source On-State Resistance RDS(on) [] 0.40 0.15 ­1 Gate to Source Voltage VGS [V] DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulse test (600 µs), Ta = 25°C 0.25 125 °C ­1 0 ­1.5 ­1.0 ­55 °C ­5 ­1.5 V ­1 0 ­7 ­2.0 V ­2 25 °C ­8 Drain Current ID [A] Drain Current ID [A] ­9 VGS = ­5.0 V 0 25 50 75 100 125 150 Ambient Temperature Ta [°C] ­50 0 50 100 150 Ambient Temperature Ta [°C] Seiko Instruments Inc. 5 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA S-90P0332SUA Rev.1.0_01 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING TIME vs. DRAIN CURRENT VGS = -5 V, VDD = -10 V, PW = 10 µs, Duty Cycle1%, Ta = 25°C VGS = 0 V, f = 1 MHz, Ta = 25°C 1000 Ciss td(off) Switching Time t [ns] Capacitance Ciss, Coss, Crss [pF] 1000 Coss 100 Crss 100 tr ­5 ­10 1 0.01 ­20 ­15 td(on) 10 10 0 tf 0.1 Drain to Source Voltage VDS [V] GATE TO SOURCE VOLTAGE vs. GATE CHARGE VDS = -10 V, ID = -2.5 A, Ta = 25°C REVERSE DRAIN CURRENT vs. SOURCE TO DRAIN VOLTAGE Pulse test (600 µs), Ta = 25°C ­10 ­9 Reverse Drain Current IDR [A] Gate to Source Voltage VGS [V] ­10 ­8 ­6 ­4 ­2 0 0 2 4 6 8 10 ­8 ­7 ­6 12 VGS = ­4.5 V ­5 ­4 ­2.5 V ­3 0V ­2 ­1 0 Gate Charge Qg [nC] 4.5 V 0 ­0.2 ­0.4 ­0.6 Standardized Transition Thermal Resistance 1 Single Pulse 0.1 0.01 0.1 ­0.8 Source to Drain Voltage VSD [V] STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH 2 Rth(ch-a) = 50°C/W, Ta = 25°C, Mounted on a ceramics board (1225 mm × 1 mm) 1 10 Pulse Width PW [s] 6 10 1 Drain Current -ID [A] Seiko Instruments Inc. 100 1000 ­1.0 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA S-90P0332SUA Rev.1.0_01 Marking Specification SOT-23-3 Top view 3 (1)(3) (4) (1) (2) (3) (4) 1 Product name vs. Product code Product code Product name (1) (2) (3) S-90P0112SMA-TF S-90P0112SMA-TF O N S 2 (1)(3) (4)(6) (4) (5) (6) (1) (2) (3) SOT-89-3 Top view 1 : Product code (Refer to Product name vs. Product code) : Lot number 2 3 : Product code (Refer to Product name vs. Product code) : Lot number Product name vs. Product code Product code Product name (1) (2) (3) S-90P0222SUA-TF S-90P0222SUA-TF O N W S-90P0332SUA-TF S-90P0332SUA-TF O N X Remark The mark shows the product indicated in this data sheet. Seiko Instruments Inc. 7 4.5±0.1 1.5±0.1 1.6±0.2 1 2 3 1.5±0.1 1.5±0.1 0.4±0.05 45° 0.4±0.1 0.4±0.1 0.45±0.1 No. UP003-A-P-SD-1 UP003-A-P-SD-1.1 TITLE SOT893-A-PKG Dimensions No. UP003-A-P-SD-1 UP003-A-P-SD-1.1 SCALE UNIT mm Seiko Instruments Inc. +0.1 ø1.5 -0 4.0±0.1(10 pitches : 40.0±0.2) 2.0±0.05 ø1.5 +0.1 -0 5° max. 0.3±0.05 8.0±0.1 2.0±0.1 4.75±0.1 Feed direction No. UP003-A-C-SD-1 UP003-A-C-SD-1.1 TITLE SOT893-A-Carrier Tape No. UP003-A-C-SD-1 UP003-A-C-SD-1.1 SCALE UNIT mm Seiko Instruments Inc. 16.5max. 13.0±0.3 Enlarged drawing in the central part (60°) (60°) No. UP003-A-R-SD-1 UP003-A-R-SD-1.1 SOT893-A-Reel TITLE No. UP003-A-R-SD-1 UP003-A-R-SD-1.1 SCALE UNIT QTY. mm Seiko Instruments Inc. 1,000 · · · · · · The information described herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. When the products described herein are regulated products subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.