NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: AN898 AN898 MOSFET Jamie Dunn Microchip Technology Inc. MOSFET MOSFET MOSFET MOSFET Insulated Gate Bipolar Transistor IGBT MOSFET MOSFET MOSFET IGBT 1 5 , MOSFET IGBT ? MOSFET IGBT MOSFET IGBT MOSFET IGBT D C G G S , VCC GND 9 PWM MOSFET IC G Q1 A S D G Q1 VCC D Q2 B Q2 GND S IC 9 12 15 2 Microchip MOSFET 9 10 12 0.5A 9.0A ... | Original |
18 pages, |
mosfet 600V 30A AN885 AN898 mosfet 20A 500V "MOSFET " 400V AN983 fet 500v 10A Fairchild 9020 mosfet 1000v 9A Mosfet 600V, 20A mosfet 12A 600V IGBT Designers Manual igbt 50V 10A AN898 abstract |
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| Abstract: Philips Semiconductors Objective specification PowerMOS transistor BUK113-50DL BUK113-50DL Logic level TOPFET_ DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope , MOSFET and supply of overload protection circuits derived from input • Low operating input current , CONFIGURATION SYMBOL January 1996 1 Rev 1.000 Philips Semiconductors Objective specification PowerMOS transistor , power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN. ... | OCR Scan |
5 pages, |
TOPFET logic BUK113-50DL TOPFET S 170 MOSFET TRANSISTOR BUK113-50DL abstract |
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| Abstract: BISS loadswitches that combine a low VCEsat (BISS) transistor with a resistor-equipped transistor (RET , conventional S transistors Application example Vdrive VCC Key benefits 4 omponent count reduction C 4 oard space reduction B Key applications 4 omplementary MOSFET driver C 4 alf and , applications A 4.9 x 3.9 x 1.75 mm 001aag170 MOSFET driver/push-pull amplifier Application , 2 170 * 250 0.5 0.05 0.01 2 170 * 250 0.5 0.05 PBSS2515VPN PBSS2515VPN 200 ... | Original |
4 pages, |
PBSS4160DPN PBSS2515YPN PBSS4140DPN PBSS2515VPN PBSS4160DS PBSS4240DPN PBSS4350SS PBSS5160DS PNP driver transistor PBSS2515VS PBSS3515VS S 170 MOSFET TRANSISTOR npn transistor footprint datasheet abstract |
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| Abstract: 2.7 V I,s Input supply current normal operation; V,s = 5 V - 330 450 ^A V,s = 4 V - : 170 270 , Philips Semiconductors Objective specification PowerMOS transistor BUK113-50DL BUK113-50DL Logic level TOPFET_ DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic , Control of power MOSFET and supply of overload protection circuits derived from input • Low operating , Its Respective Manufacturer Philips Semiconductors Objective specification PowerMOS transistor ... | OCR Scan |
5 pages, |
BUK113-50DL TOPFET S 170 MOSFET TRANSISTOR BUK113-50DL abstract |
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| Abstract: ST13P10 ST13P10 P Channel Enhancement Mode MOSFET -13.0A DESCRIPTION ST13P10 ST13P10 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench , Mode MOSFET -13.0A ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Symbo l Typical , ST13P10 ST13P10 P Channel Enhancement Mode MOSFET -13.0A ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless , -52 uA A 115 130 3.2 m S -1.6 V Dynamic Total Gate Charge Qg 58 ... | Original |
9 pages, |
TO-252 MOSFET p channel p channel mosfet 100v ST13P10 S 170 MOSFET TRANSISTOR -100V/-13 ST13P10 abstract |
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| Abstract: external common emitter switching transistor configuration (see Figure 2) will turn the P-Channel MOSFET , MOSFETS: A MOSFET transistor is constructed of many individual MOSFET cells connected in parallel. They , M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 , Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing Isolated Package , 4.0 -4.0 0.26 0.31 0.16 0.20 - V V A A nA V V S S ID = 14A VDS = 80V VGS ... | Original |
6 pages, |
P-channel MOSFET 100V, 20 Amps MPM3002 P-channel MOSFET 100V, 10 Amps MPM3012 150 amp H-bridge Mosfet 4707 N Channel MOSFETs datasheet abstract |
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| Abstract: Motorola TMOS Power MOSFET Transistor Device Data MTP33N10E MTP33N10E ELECTRICAL CHARACTERISTICS (Tj = 25°C unless , Power MOSFET Transistor Device Data 4-865 MTP33N10E MTP33N10E TYPICAL ELECTRICAL CHARACTERISTICS < I- z UJ cc cc o , Figure 6. Drain-To-Source Leakage Current versus Voltage 4-866 Motorola TMOS Power MOSFET Transistor , Variation Motorola TMOS Power MOSFET Transistor Device Data 4-865 MTP33N10E MTP33N10E 10 ST 14 h i 12 lu cs § § lu O , values indicated. 4-868 Motorola TMOS Power MOSFET Transistor Device Data 4-865 SAFE OPERATING AREA ... | OCR Scan |
6 pages, |
MTP33N10E AN569 S 170 MOSFET TRANSISTOR datasheet abstract |
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| Abstract: ) Turn-Off Time td(off) -4.0 uA A 115 135 170 240 -0.8 -1.2 m S V Dynamic Crss , STP7401 STP7401 P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION STP7401 STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench , design 3 D G S 1 2 1.Gate 2.Source 3.Drain PART MARKING SOT-323 3 01YW , http://www.stansontech.com STP7401 STP7401 2005. V1 STP7401 STP7401 P Channel Enhancement Mode MOSFET ... | Original |
6 pages, |
ST7401S32RG S 170 MOSFET TRANSISTOR SOT323 MOSFET P STP7401 SC-70 -30V/-2 -30V/-1 STP7401 abstract |
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| Abstract: MOSFET Transistor Device Data MTY25N60E MTY25N60E TYPICAL ELECTRICAL CHARACTERISTICS co Q. S ce 3 o Q I I I I , overall value. REV 2 Motorola TMOS Power MOSFET Transistor Device Data 4-1091 MTY25N60E MTY25N60E ELECTRICAL , Voltage 600 4-1092 Motorola TMOS Power MOSFET Transistor Device Data MTY25N60E MTY25N60E POWER MOSFET SWITCHING , Capacitance Variation 4-1092 Motorola TMOS Power MOSFET Transistor Device Data MTY25N60E MTY25N60E Figure 8. Gate Charge , 4-1092 Motorola TMOS Power MOSFET Transistor Device Data MTY25N60E MTY25N60E SAFE OPERATING AREA "3060 2500 J I ... | OCR Scan |
6 pages, |
MTY25N60E AN569 datasheet abstract |
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| Abstract: ISO-9001 ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3014 4707 , 45 46 760 260 170 58 8.3 32 - nC nC nC nS nS nS nS pF pF pF - 1.3 -1.6 130 130 650 650 190 190 970 970 V V nS nS uC uC V uA uA nA V V S S , the gate gets turned ON and OFF will determine the dissipation of the transistor while it is , important to have as low a driving impedance as practical for the size of the transistor. Many motor drive ... | Original |
5 pages, |
transistor servo drive S 170 MOSFET TRANSISTOR MSK3014 P channel MOSFET 10A schematic 4707 N Channel MOSFETs ISO-9001 ISO-9001 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| SPICE libraries for MOSFET SPICE libraries for MOSFET Click SFET to download a SPICE library containing models for the following S-FET Transistors: BUZ 100s BUZ 100sl BUZ 101s BUZ 101sl BUZ 102s BUZ 102sl BUZ 103s BUZ 103sl BUZ 104s BUZ 104sl BUZ 110s BUZ 110sl BUZ 111s SPD 13N05L 13N05L 13N05L 13N05L SPU 14N05 14N05 14N05 14N05 SPU 13N05L 13N05L 13N05L 13N05L BSP 318s BSP 320s www.datasheetarchive.com/files/infineon/products/36/3681.htm |
Infineon | 26/11/1998 | 7.01 Kb | HTM | 3681.htm |
| SABER libraries for MOSFET SABER libraries for MOSFET Click SFET to download a SABER library containing models for the following S-FET Transistors: BUZ 100s BUZ 100sl BUZ 102s BUZ 102sl BUZ 103s BUZ 103sl BUZ 104s BUZ 104sl BUZ 110s BUZ 110sl BUZ 111s BUZ 111sl SPD 31N05 31N05 31N05 31N05 following SIPMOS Power Transistors: BUZ 10 BUZ 10L BUZ 10M BUZ 11 BUZ 11GE www.datasheetarchive.com/files/infineon/products/36/3686.htm |
Infineon | 26/11/1998 | 6.75 Kb | HTM | 3686.htm |
| (typ)(nC) 22.0 Category Power MOSFETs for S-correction capacitor/mode switching Ohm) 230.0@10V Category Power MOSFETs for S-correction capacitor/mode switching V DS @ max (on) (m Ohm) 230.0@10V I D max(A) 7.6 Category Power MOSFETs for S-correction capacitor Single N-channel Q GD (typ)(nC) 12.0 Category Power MOSFETs for S-correction capacitor Efficiency(%) >40 T p (uS) 500 P L (W) =170 PUMH10 PUMH10 PUMH10 PUMH10 Category Double RETs R1(k www.datasheetarchive.com/files/philips/catalog/parametrics/33-v1.html |
Philips | 21/01/2002 | 25.25 Kb | HTML | 33-v1.html |
| MOSFET Transistor Data DL150/D DL150/D DL150/D DL150/D TVS/Zener Device Data DL410/D DL410/D DL410/D DL410/D Power Applications Manual DL Line Operated, Regulated 5V/50A Switching Power Supply AN875/D AN875/D AN875/D AN875/D Power Transistor Safe Operating Theory and Applications of the MC34063 MC34063 MC34063 MC34063 and uA78S40 Switching Regulator Control Circuits AN929/D AN929/D AN929/D AN929/D Insuring Reliable Performance from Power MOSFETs AN951/D AN951/D AN951/D AN951/D Drive Optimization for 1.0kV Off-Line Converter Transistors *AN954/D AN954/D AN954/D AN954/D A Unique Converter Configuration AN976/D AN976/D AN976/D AN976/D A New www.datasheetarchive.com/files/motorola/design-n/lit/html/br135a/power.htm |
Motorola | 25/11/1996 | 9.06 Kb | HTM | power.htm |
| SILICON POWER TRANSISTOR 5 866 Datasheets TLC116A TLC116A TLC116A TLC116A TLC116D TLC116D TLC116D TLC116D TLC116S TLC116T TLC116T TLC116T TLC116T TLC226A TLC226A TLC226A TLC226A BUW48 BUW48 BUW48 BUW48 BUW49 BUW49 BUW49 BUW49 HIGH CURRENT NPN SILICON TRANSISTORS 6 733 Datasheets BUR50S TRANSISTOR 6 733 Datasheets BUY49S SILICON NPN TRANSISTOR 5 733 Part Number(s) Description Size (kb) 1000 Datasheets BU407 BU407 BU407 BU407 HIGH CURRENT NPN SILICON TRANSISTOR 5 1000 Datasheets BU406 BU406 BU406 BU406 SILICON NPN SWITCHING TRANSISTOR 5 www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/191.htm |
STMicroelectronics | 31/03/1999 | 60.11 Kb | HTM | 191.htm |
| *POLYFET RF DEVICES *03/22/96 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * D G S .SUBCKT F1020/PF F1020/PF F1020/PF F1020/PF 1 2 3 4 5 X1 1 2 5 F1020A/PF F1020A/PF F1020A/PF F1020A/PF X2 4 3 5 F1020A/PF F1020A/PF F1020A/PF F1020A/PF .ends 14 F1020MOS F1020MOS F1020MOS F1020MOS L=1.1U W= 0.30 ;D G S B LEVEL1 JFET 17 14 13 F1020JF F1020JF F1020JF F1020JF ;D G S DBODY 14 17 F1020DB F1020DB F1020DB F1020DB ;P N .MODEL F1020MOS F1020MOS F1020MOS F1020MOS NMOS(VTO=2.7 KP=1.70E-5 LAMBDA=0.1 RD= 0 www.datasheetarchive.com/files/polyfet/eagle/f1020.lib |
Polyfet | 12/02/2004 | 0.98 Kb | LIB | f1020.lib |
| A Overtemperature Protection Adjustable Blanking Time for MOSFET's Current Sense Signal (LTC4441 LTC4441 LTC4441 LTC4441 models, as well as resistors, transistors and MOSFET models. Step 1. If you do not already have a Linear Technology - LTC4441 LTC4441 LTC4441 LTC4441 - N-Channel MOSFET Gate Driver and MOSFET Drivers > LTC4441 LTC4441 LTC4441 LTC4441 PowerPath Controllers / Ideal Diodes High Side Switches and MOSFET Drivers Circuit Breakers & Overvoltage Protection www.datasheetarchive.com/files/linear/product/2582.html |
Linear | 17/09/2010 | 20.95 Kb | HTML | 2582.html |
| different power solutions from 6W to 170W and operates up to 1GHz. F or much of the semiconductor industry's history, the vast bulk of MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor transistors but must be optimized for a completely different set of needs. Key differences between RF MOSFETs (from 6W for the SD57006 SD57006 SD57006 SD57006 to the SD57170 SD57170 SD57170 SD57170's 170W) but also provides low IMD levels in the simpler class AB , Bristol Blue glass and state-of-the-art RF power transistors? The answer is at the end of this article but www.datasheetarchive.com/files/stmicroelectronics/stonline/press/magazine/challeng/3rdedi99/chal04.htm |
STMicroelectronics | 23/11/1999 | 10.23 Kb | HTM | chal04.htm |
| , powering the south bridge and the PCI slots through an external NPN pass transistor during sleep states (S3 ) transistor in S3 sleep state. In S4/S5 sleep states, the ISL6504 ISL6504 ISL6504 ISL6504 5V DUAL output is shut down. In the ISL6504 ISL6504 ISL6504 ISL6504 Controllers Military/Space Optical Storage Power MOSFET Drivers Power Supply Support Special Analog Switches . Package MSL Price US $ ISL6504CB ISL6504CB ISL6504CB ISL6504CB Active Comm 16 Ld SOIC 1 1.70 ISL6504CB-T ISL6504CB-T ISL6504CB-T ISL6504CB-T Active Comm 16 Ld SOIC T+R 1 1.70 ISL6504CBN ISL6504CBN ISL6504CBN ISL6504CBN Active Comm 16 Ld SOIC www.datasheetarchive.com/files/intersil/device_pages/device_isl6504.html |
Intersil | 07/09/2006 | 31.02 Kb | HTML | device_isl6504.html |
| power darlington transistors (7) Multi-chip 25 - 300 V MOSFETs (12) N-channel dual gate MOSFETs -effect transistors for switching (20) N-channel, single gate MOSFETs for Switching (5) P-channel junction horizontal deflection output stages (39) S-Band Bipolar Transistors (7) S-Band Radar Bipolar (1 Philips Semiconductors; Interactive Selectionguides of Transistors 1.0 GHz LDMOS (4) 1.0 GHz LDMOS Transistors (1) 1.8 - 2.0 GHz LDMOS (4) 1.8 - 2.0 GHz www.datasheetarchive.com/files/philips/selectionguides/tables/30928_i.html |
Philips | 15/04/2003 | 50.23 Kb | HTML | 30928_i.html |