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S 170 MOSFET TRANSISTOR

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Abstract: SO T6 66 BSS84AKV BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 , -170 mA - 4.5 7.5 Per transistor VDS drain-source voltage VGS gate-source voltage , cm2. BSS84AKV BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 2. Pinning , 50 V, 170 mA dual P-channel Trench MOSFET 001aao121 120 001aao122 120 Pder (% , Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal ... NXP Semiconductors
Original
datasheet

17 pages,
154.36 Kb

BSS84AKV TEXT
datasheet frame
Abstract: SO T6 66 BSS84AKV BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 - 19 May 2011 , Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning , BSS84AKV BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 5. Limiting values Table 5 , 50 V, 170 mA dual P-channel Trench MOSFET 001aao121 120 001aao122 120 Pder (% , 50 V, 170 mA dual P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal ... NXP Semiconductors
Original
datasheet

17 pages,
853.07 Kb

BSS84AK NXP SMD TRANSISTOR MARKING CODE s1 BSS84AKV TEXT
datasheet frame
Abstract: SO T6 BSS84AKV BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 - 19 May 2011 Product data , transistor -170 mA 7.5 Static characteristics (per transistor) [1] Device mounted on an FR4 , BSS84AKV BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 , BSS84AKV BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET 5. Limiting values Table 5. Symbol VDS VGS ID IDM , Semiconductors BSS84AKV BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET 120 Pder (%) 80 001aao121 120 Ider ... NXP Semiconductors
Original
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18 pages,
853.96 Kb

g1 TRANSISTOR SMD MARKING CODE Dual P-Channel MOSFET BSS84AKV TEXT
datasheet frame
Abstract: €§ , 请参考 ELM 的英文版或日文版。 G S 备注 单 N 沟道 MOSFET ELM32428LA-S ELM32428LA-S , 3.0 V A 1 mΩ 1 S 1 1.3 75 1.5 nA V A 1 170 栅极阈值ç”uå , Enhancement Mode Field Effect Transistor 单 N 沟道 MOSFET ELM32428LA-S ELM32428LA-S P75N02LDG P75N02LDG TO-252 (DPAK , 单 N 沟道 MOSFET ELM32428LA-S ELM32428LA-S ■概要 ■特点 ELM32428LA-S ELM32428LA-S 是 N 沟道低输入ç”uå , =25℃ Ta=100℃ Id 75 50 A 漏极ç”uæuï¼ˆè„‰å†²ï¼‰ Idm 170 A 崩溃ç”uæu å ... ELM Technology
Original
datasheet

4 pages,
394.01 Kb

ELM32428LA-S TEXT
datasheet frame
Abstract: NIKO-SEM N-Channel Logic Level Enhancement Single N-channel MOSFET Mode Field Effect Transistor , Single N-channel MOSFET ELM32428LA-S ELM32428LA-S ■General description ■Features ELM32428LA-S ELM32428LA-S uses , Id Pulsed drain current Avalanche current Avalanche energy 170 Iar Ta=25°C Ta , -252-3(TOP VIEW) TAB Pin No. 1 2 1 GATE DRAIN 3 2 Pin name SOURCE 3 4-1 G S Single N-channel MOSFET ELM32428LA-S ELM32428LA-S ■Electrical characteristics Parameter STATIC PARAMETERS ... ELM Technology
Original
datasheet

4 pages,
415.64 Kb

P75N02LDG ELM32428LA-S TEXT
datasheet frame
Abstract: . 1 2 3 2 1 Pin name GATE DRAIN SOURCE 3 4- 1 G S Single N-channel MOSFET , Single N-channel MOSFET ELM32428LA-S ELM32428LA-S ■General description ■Features ELM32428LA-S ELM32428LA-S uses , 170 60 A A L=0.1mH Eas 140 mJ L=0.05mH Ta=25°C Power dissipation Ta , 10.0 mΩ S Forward transconductance Gfs Vgs=4.5V, Id=24A Vds=15V, Id=30A Diode forward , gate charge 1 1 1 1.3 V 1 Is Ism 75 170 A A 3 Ciss Coss 2700 500 ... ELM Technology
Original
datasheet

4 pages,
354.29 Kb

ELM32428LA-S TEXT
datasheet frame
Abstract: P-channel MOSFET. The MIC2514 MIC2514 can be used instead of a separate high-side driver and MOSFET in many , if the die temperature exceeds approximately 170°C. The MIC2514 MIC2514 is available in the 5-lead SOT-23-5 package with a temperature range of -40°C to +85°C. Features · MOSFET on-resistance 1,5£2 typical at , MOSFET source. Also supplies IC's internal circuitry. Connect to supply. Switch Output: Output MOSFET , 1.45 1.65 2.4 1.5 .95 0.5 1.4 1.9 V V V 2.0 2.3 4.5 2.4 2.7 1.5 1.7 1.5 2.0 2.5 Output MOSFET ... OCR Scan
datasheet

5 pages,
173.14 Kb

S 170 MOSFET TRANSISTOR MIC2514 TEXT
datasheet frame
Abstract: =100A/μs Qrr S 170 Ciss Qg 1.0 70 μA 37 200 0.043 11.0 ns A μC , シングル N チャンネル MOSFET ELM32428LA-S ELM32428LA-S ■概要 ■特長 ELM32428LA-S ELM32428LA-S , 75 50 170 アバランシェ電æu アバランシェエネルギー アバã , ¿½ � 4-1 � � シングル N チャンネル MOSFET ELM32428LA-S ELM32428LA-S ■電気的特æ , pF 500 1100 pF 200 pF 19.0 25.0 nC 2 9.0 11.0 nC nC 2 2 11.5 17.0 17.0 ... ELM Technology
Original
datasheet

4 pages,
584.99 Kb

ELM32428LA-S TEXT
datasheet frame
Abstract: Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced , . Motorola TMOS Power MOSFET Transistor Device Data 4-1085 M TY 20N 50E ELECTRICAL CHARACTERISTICS , 20 Adc, V q s = 10 Vdc, R q = 9.1 i l ) *d(on) , TMOS Power MOSFET Transistor Device Data 4-1087 MTY20N50E MTY20N50E POWER MOSFET SWITCHING Switching , CapacitanceVariation 4-1088 Motorola TMOS Power MOSFET Transistor Device Data MTY20N50E MTY20N50E Figure 8 ... OCR Scan
datasheet

6 pages,
242.83 Kb

transistor 667 7A S 170 MOSFET TRANSISTOR transistor TL 431 g TEXT
datasheet frame
Abstract: integrated high-side power switch that c o n s is ts of a T T L c o m p a tib le in p u t and p ro te cte d P-channel MOSFET. The MIC2514 MIC2514 can be used instead of a separate high-side driver and MOSFET in many , if the die temperature exceeds approximately 170°C. The MIC2514 MIC2514 is available in the 5-lead SOT-23-5 package with a temperature range of -4 0°C to +85°C. Features · MOSFET on-resistance 1.5i l typical at , m m m F10 n r OUT P art Identification w NC H ig h -S id e P ow er Sw itch 5 ... OCR Scan
datasheet

6 pages,
201.12 Kb

sot-23-5 9A MIC2514 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
DENSITY" POWER MOS TRANSISTOR Datasheet N-CHANNLE ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR STP40N03L-20 STP40N03L-20 Document Format Size Document MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA n TYPICAL R DS(on) = 0.016 W n V DS > I D(on) x R DS(on)max I D = 20 A 15 22 S C iss C oss C rss Input Capacitance Output = 24 V I D = 20 A R G = 50 W V GS = 5 V (see test circuit, figure 5) 200 A/ m s Q g Q gs Q
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4886.htm
STMicroelectronics 20/10/2000 11.71 Kb HTM 4886.htm
THRESHOLD POWER MOS TRANSISTOR Datasheet N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR STP38N06 STP38N06 Document Format Size Document Number HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA n TYPICAL R DS(on) = 0.026 W n AVALANCHE RUGGED 14 19 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = GS = 10 V (see test circuit, figure 5) 240 A/ m s Q g Q gs Q gd Total Gate Charge Gate-Source Charge
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3645.htm
STMicroelectronics 20/10/2000 12.44 Kb HTM 3645.htm
DENSITY" POWER MOS TRANSISTOR Datasheet N-CHANNLE ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR STP40N03L-20 STP40N03L-20 Document Format Size - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA n TYPICAL I D = 20 A 15 22 S C iss C oss C rss Input Capacitance Output Capacitance Reverse (see test circuit, figure 5) 200 A/ m s Q g Q gs Q gd Total Gate Charge Gate-Source Charge
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4886-v3.htm
STMicroelectronics 25/05/2000 10.98 Kb HTM 4886-v3.htm
ST | N-CHANNEL 55V - 0.0055 OMH - 80A - TO-220 STRIPFET POWER MOSFET STP80NF55-07 STP80NF55-07 N-CHANNEL 55V - 0.0055 OMH - 80A - TO-220 STRIPFET POWER MOSFET Document Number: 6191 0.0055 W - 80A - TO-220 STripFET ] " POWER MOSFET TARGET DATA n TYPICAL R DS(on) = 0.0055 W n Power MOSFET is the second generation of STMicroelectronics unique "Single Feature Size ] " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6191.htm
STMicroelectronics 02/04/1999 6.76 Kb HTM 6191.htm
FEATURE SIZE POWER MOSFET Datasheet N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET STP80NE06-10 STP80NE06-10 Document Format Size Document Number SINGLE FEATURE SIZE ] " POWER MOSFET n TYPICAL R DS(on) = 0.0085 W n EXCEPTIONAL dv/dt CAPABILITY n 100% AVALANCHE TESTED n APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the transistor shows extremely high packing density for low on-resistance, rugged avalanche
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5632.htm
STMicroelectronics 20/10/2000 9.93 Kb HTM 5632.htm
ST | N-CHANNEL 55V - 0.0055 OMH - 80A - TO-220 STRIPFET POWER MOSFET STP80NF55-07 STP80NF55-07 N-CHANNEL 55V - 0.0055 OMH - 80A - TO-220 STRIPFET POWER MOSFET Document Number: 6191 0.0055 W - 80A - TO-220 STripFET ] " POWER MOSFET TARGET DATA n TYPICAL R DS(on) = 0.0055 W n Power MOSFET is the second generation of STMicroelectronics unique "Single Feature Size ] " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6191-v1.htm
STMicroelectronics 14/06/1999 6.73 Kb HTM 6191-v1.htm
ST | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET STP80NE06-10 STP80NE06-10 N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Document Number: 5632 ENHANCEMENT MODE " SINGLE FEATURE SIZE ] " POWER MOSFET n TYPICAL R DS(on) = 0.0085 W n EXCEPTIONAL dv/dt CAPABILITY n 100% AVALANCHE TESTED n APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is transistor shows extremely high packing density for low on-resistance, rugged avalanche
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5632-v1.htm
STMicroelectronics 02/04/1999 7.49 Kb HTM 5632-v1.htm
TO-220 STRIPFET MOSFET Datasheet N-CHANNEL 100V - 0.07 OHM - 20A - TO-220 STRIPFET MOSFET STP20NE10 STP20NE10 Document Format Size Document Number Date Raw Text Format STP20NE10 STP20NE10 N - CHANNEL 100V - 0.07 W - 20A - TO-220 STripFET ] MOSFET n CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size ] " strip-based process.The resulting transistor shows extremely high packing density for low on-
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6050.htm
STMicroelectronics 20/10/2000 9.86 Kb HTM 6050.htm
ST | N-CHANNEL 100V - 0.07 OHM - 20A - TO-220 STRIPFET MOSFET STP20NE10 STP20NE10 N-CHANNEL 100V - 0.07 OHM - 20A - TO-220 STRIPFET MOSFET Document Number: 6050 Date TO-220 STripFET ] MOSFET n TYPICAL R DS(on) = 0.07 W n EXCEPTIONAL dv/dt CAPABILITY n 100% AVALANCHE TESTED n APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size ] " strip-based process.The resulting transistor shows extremely
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6050-v2.htm
STMicroelectronics 14/06/1999 7.4 Kb HTM 6050-v2.htm
FEATURE SIZE POWER MOSFET Datasheet N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET STP80NE06-10 STP80NE06-10 Document Format Size Document Number ENHANCEMENT MODE " SINGLE FEATURE SIZE ] " POWER MOSFET n TYPICAL R DS(on) = 0.0085 W n EXCEPTIONAL This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size ] " strip-based process. The resulting transistor shows extremely high packing density for low
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5632-v3.htm
STMicroelectronics 25/05/2000 9.33 Kb HTM 5632-v3.htm