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S 170 MOSFET TRANSISTOR

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Abstract: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 â'" 19 May 2011 , -170 mA - 4.5 7.5 Per transistor VDS drain-source voltage VGS gate-source voltage , cm2. BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 2. Pinning , 50 V, 170 mA dual P-channel Trench MOSFET 001aao121 120 001aao122 120 Pder (% , Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal NXP Semiconductors
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AEC-Q101
Abstract: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 - 19 May 2011 , Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning , BSS84AKV NXP Semiconductors 50 V, 170 mA dual P-channel Trench MOSFET 5. Limiting values Table 5 , 50 V, 170 mA dual P-channel Trench MOSFET 001aao121 120 001aao122 120 Pder (% , 50 V, 170 mA dual P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal NXP Semiconductors
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NXP SMD TRANSISTOR MARKING CODE s1 BSS84AK
Abstract: SO T6 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 - 19 May 2011 Product data , transistor -170 mA 7.5 Static characteristics (per transistor) [1] Device mounted on an FR4 , BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 , BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET 5. Limiting values Table 5. Symbol VDS VGS ID IDM , Semiconductors BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET 120 Pder (%) 80 001aao121 120 Ider NXP Semiconductors
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Dual P-Channel MOSFET g1 TRANSISTOR SMD MARKING CODE 771-BSS84AKV115
Abstract: '§ , 请å'è'ƒ ELM çš"è'±æ‡ç‰æ日æ‡ç‰ã'' G S 备注 å• N æ²é" MOSFET ELM32428LA-S , 3.0 V A 1 mΩ 1 S 1 1.3 75 1.5 nA V A 1 170 æ æžé˜å'¼ç"uå , Enhancement Mode Field Effect Transistor å• N æ²é" MOSFET ELM32428LA-S P75N02LDG TO-252 (DPAK , å• N æ²é" MOSFET ELM32428LA-S â æ¦'要 â ç‰¹ç'¹ ELM32428LA-S 是 N æ²é"ä½è¾"å¥ç"uå , =25â"ƒ Ta=100â"ƒ Id 75 50 A 漏极ç"uæuï¼è"‰å²ï¼‰ Idm 170 A 崩溃ç"uæu å ELM Technology
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Abstract: NIKO-SEM N-Channel Logic Level Enhancement Single N-channel MOSFET Mode Field Effect Transistor , Single N-channel MOSFET ELM32428LA-S â General description â Features ELM32428LA-S uses , Id Pulsed drain current Avalanche current Avalanche energy 170 Iar Ta=25°C Ta , -252-3(TOP VIEW) TAB Pin No. 1 2 1 GATE DRAIN 3 2 Pin name SOURCE 3 4-1 G S Single N-channel MOSFET ELM32428LA-S â Electrical characteristics Parameter STATIC PARAMETERS ELM Technology
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Abstract: . 1 2 3 2 1 Pin name GATE DRAIN SOURCE 3 4- 1 G S Single N-channel MOSFET , Single N-channel MOSFET ELM32428LA-S â General description â Features ELM32428LA-S uses , 170 60 A A L=0.1mH Eas 140 mJ L=0.05mH Ta=25°C Power dissipation Ta , 10.0 mΩ S Forward transconductance Gfs Vgs=4.5V, Id=24A Vds=15V, Id=30A Diode forward , gate charge 1 1 1 1.3 V 1 Is Ism 75 170 A A 3 Ciss Coss 2700 500 ELM Technology
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Abstract: P-channel MOSFET. The MIC2514 can be used instead of a separate high-side driver and MOSFET in many , if the die temperature exceeds approximately 170°C. The MIC2514 is available in the 5-lead SOT-23-5 package with a temperature range of -40°C to +85°C. Features · MOSFET on-resistance 1,5£2 typical at , MOSFET source. Also supplies IC's internal circuitry. Connect to supply. Switch Output: Output MOSFET , 1.45 1.65 2.4 1.5 .95 0.5 1.4 1.9 V V V 2.0 2.3 4.5 2.4 2.7 1.5 1.7 1.5 2.0 2.5 Output MOSFET -
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MIC2514BM5
Abstract: =100A/μs Qrr S 170 Ciss Qg 1.0 70 μA 37 200 0.043 11.0 ns A μC , ã'·ãƒ³ã'°ãƒ« N チャンãƒãƒ« MOSFET ELM32428LA-S â æ¦'要 â ç‰¹é•· ELM32428LA-S , 75 50 170 ã'¢ãƒãƒ©ãƒ³ã'·ã'§é›»æu ã'¢ãƒãƒ©ãƒ³ã'·ã'§ã'¨ãƒãƒ«ã'®ãƒ¼ ã'¢ãƒã , ¿½ � 4-1 � � ã'·ãƒ³ã'°ãƒ« N チャンãƒãƒ« MOSFET ELM32428LA-S â é›»æ°—çš"特æ , pF 500 1100 pF 200 pF 19.0 25.0 nC 2 9.0 11.0 nC nC 2 2 11.5 17.0 17.0 ELM Technology
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Abstract: Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced , . Motorola TMOS Power MOSFET Transistor Device Data 4-1085 M TY 20N 50E ELECTRICAL CHARACTERISTICS , 20 Adc, V q s = 10 Vdc, R q = 9.1 i l ) *d(on) , TMOS Power MOSFET Transistor Device Data 4-1087 MTY20N50E POWER MOSFET SWITCHING Switching , CapacitanceVariation 4-1088 Motorola TMOS Power MOSFET Transistor Device Data MTY20N50E Figure 8 -
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transistor TL 431 g transistor 667 7A 0E-05
Abstract: integrated high-side power switch that c o n s is ts of a T T L c o m p a tib le in p u t and p ro te cte d P-channel MOSFET. The MIC2514 can be used instead of a separate high-side driver and MOSFET in many , if the die temperature exceeds approximately 170°C. The MIC2514 is available in the 5-lead SOT-23-5 package with a temperature range of -4 0°C to +85°C. Features · MOSFET on-resistance 1.5i l typical at , m m m F10 n r OUT P art Identification w NC H ig h -S id e P ow er Sw itch 5 -
OCR Scan
sot-23-5 9A
Abstract: (Note 3) °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR SYMBOL TEST CONDITIONS V g s =20V, V q s , MOSFET ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued (TA=25°C unless otherwise noted) UNITS , CMLDM7002A CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET , special dual versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by , configuration. These special Dual Transistor devices offer low rQS(ON) and low VDS (ON) ARKING CODE: CMLDM7002A -
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diode marking code ej S 170 TRANSISTOR SPS MARKING CODE sps transistor TRANSISTOR MARKING CODE ss CP324
Abstract: Compliance, Silicon MOSFET Power MOSFET Power RD07MUS2B RoHS Compliance, Silicon MOSFET Power MOSFET Power MOSFET Power Mitsubishi
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an-uhf-097- AN-UHF-098 175MH 527MH 870MH VHF/UHF/870MH VHF/UHF/800MH
Abstract: transistor. Fault conditions turn off the output transistor. The output MOSFET has an intrinsic body diode , turns off the output MOSFET if the die temperature exceeds approximately 170°C. Thermal shut down , MIC2514 is an integrated high-side power switch that co n s is ts o f a TTL c o m p a tib le in p u t and p ro te cte d P-channel MOSFET. The MIC2514 can be used instead of a separate high-side driver and MOSFET in many lowvoltage applications. The MIC2514 switches voltage ranging from 3V to 13.5V and -
OCR Scan
Abstract: CHARACTERISTICS PER TRANSISTOR SYMBOL TEST CONDITIONS VGS=20V, VDS=0V 'GSSF VGS=20V, VDS=0V 'g s s r V DS=60V, VGS , CMLDM7002A CMLDM7002AJ* SURFACE MOUNT PICOminiT I DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central DESCRIPTION: TM Semiconductor Corp The C E N T R A L S E M IC O N D U C T O R CMLDM7002A , Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver , pinout configuration. These special Dual Transistor devices offers low r^g^o^) and low V ^ g ^ qn -
OCR Scan
Abstract: RD07MUS2B 7W 0.2+/-0.05 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz , 7W V GS-IDS CHARACTERISTICS 7 Ta=+25°C V DS=10V RoHS Compliance, Silicon MOSFET Power Transistor , f-Po CHARACTERISTICS @f=450-527M Hz Po 100 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz , =7.2V Pin=0.5W Idq=250mA 100 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz , Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz TYPICAL CHARACTERISTICS ( Vds Mitsubishi
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RD07MUS2 RD07MUS diode gp 424 RD07M AN-UHF-116 AN-VHF-046
Abstract: Mfafxm w an A M P com pany RF MOSFET Power Transistor, 15W, 28V 100-500 MHz Features · · · · · · N -C hannel H nhancem ent M ode Device DMOS S tru ctu re Lower C apacitances for B ro a d b an d O p e ra tio n C o m m o n S ource C onfiguration Low er N oise Floor 100 MHz to 500 MHz O p e ratio , : RF MOSFET Power Transistor, 15W, 28V UF2815B V2.00 Typical Broadband Performance Curves , 14.33 14.73 &27 6.22 L14 1.32 e sa 140 2XO 3.66 .10 20.96 14.61 15.24 6.33 6.46 1.40 1.70 a i7 16S 2.39 -
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cis 280v ZL04D 50OHM
Abstract: turns off the output transistor. Overcurrent and overtemperature fault conditions inhibit MOSFET turn on , is a quad integrated high-side power switch that consists of four protected N-channel MOSFET output , powered from switch #1 's supply input. The MIC2507 allows any output to be pulled higher than its input , MOSFET on-resistance 120mQ typical at 5V 130m£2 typical at 3.3V · · · · · · · Applications · Battery , Miere/ Pin Configuration M IC 2507 1 4 -P in S O IC (M ) Pin Description Pin Number -
OCR Scan
Abstract: PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8 , RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W ABSOLUTE MAXIMUM RATINGS , RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TYPICAL CHARACTERISTICS DRAIN , RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TYPICAL CHARACTERISTICS Pin-Po , Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TYPICAL CHARACTERISTICS Vgs-Ids Mitsubishi
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rd02mus TC 4863 DB D 1652 transistor MOSFET RF POWER TRANSISTOR VHF T112 transistor 0882 520MH RD02MUS2-101
Abstract: NIKO-SEM P-Channel Logic Level Enhancement å• P æ²é" MOSFET Mode Field Effect Transistor , å• P æ²é" MOSFET ELM33405CA-S â æ¦'要 â ç‰¹ç'¹ ELM33405CA-S 是 P æ²é"ä½è¾"å¥ç"uå , ¼•è"šåç§° 1 2 1 å•ä½ â"ƒ/W GATE SOURCE 3 DRAIN G S 4- 1 å¦'é'确认语è¨'çš"å‡ç¡®æ'§ , 请å'è'ƒ ELM çš"è'±æ‡ç‰æ日æ‡ç‰ã'' å• P æ²é" MOSFET ELM33405CA-S â ç"u特æ , =-2A 100 180 16 -2.5 V A 1 mΩ 1 S 1 -1.2 -1.6 -1.5 nA V A 1 -3 ELM Technology
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PA503EMG
Abstract: RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE , ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor , RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W TYPICAL CHARACTERISTICS (These , SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz , , Silicon MOSFET Power Transistor,175MHz,527MHz,7W TEST CIRCUIT(f=135-175MHz) Vdd Vgg C2 C1 22uF Mitsubishi
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f763 329J mitsubishi MOSFET gp 817 jc 817 j-120 135-527MH
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