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S 170 MOSFET TRANSISTOR

Catalog Datasheet Results Type PDF Document Tags
Abstract: P-channel MOSFET. The MIC2514 MIC2514 can be used instead of a separate high-side driver and MOSFET in many , if the die temperature exceeds approximately 170°C. The MIC2514 MIC2514 is available in the 5-lead SOT-23-5 package with a temperature range of -40°C to +85°C. Features · MOSFET on-resistance 1,5£2 typical at , MOSFET source. Also supplies IC's internal circuitry. Connect to supply. Switch Output: Output MOSFET , 1.45 1.65 2.4 1.5 .95 0.5 1.4 1.9 V V V 2.0 2.3 4.5 2.4 2.7 1.5 1.7 1.5 2.0 2.5 Output MOSFET ... OCR Scan
datasheet

5 pages,
173.14 Kb

S 170 MOSFET TRANSISTOR MIC2514 MIC2514 abstract
datasheet frame
Abstract: (Note 3) °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR SYMBOL TEST CONDITIONS V g s =20V, V q s , SILICON MOSFET ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued (TA=25°C unless otherwise noted , CMLDM7002A CMLDM7002A CMLDM7002AJ CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET , special dual versions of the 2N7002 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by , configuration. These special Dual Transistor devices offer low rQS(ON) and low VDS (ON) ARKING CODE: CMLDM7002A CMLDM7002A ... OCR Scan
datasheet

2 pages,
3173.72 Kb

TRANSISTOR MARKING CODE ss S 170 TRANSISTOR S 170 MOSFET TRANSISTOR CMLDM7002A CMLDM7002AJ 2N7002 CMLDM7002A abstract
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Abstract: AN898 AN898 MOSFET Jamie Dunn Microchip Technology Inc. MOSFET MOSFET MOSFET MOSFET Insulated Gate Bipolar Transistor IGBT MOSFET MOSFET MOSFET IGBT 1 5 , MOSFET IGBT ? MOSFET IGBT MOSFET IGBT MOSFET IGBT D C G G S , VCC GND 9 PWM MOSFET IC G Q1 A S D G Q1 VCC D Q2 B Q2 GND S IC 9 12 15 2 Microchip MOSFET 9 10 12 0.5A 9.0A ... Original
datasheet

18 pages,
473.32 Kb

fet 500v 10A AN983 mosfet 4430 "MOSFET " 400V Mosfet 600V, 20A AN885 mosfet 12A 600V mosfet Vcc 250v HEXFET Power MOSFET Designers Manual mosfet 1000v 9A igbt 50V 10A AN898 mosfet 600V 20A AN898 abstract
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Abstract: transistor. Fault conditions turn off the output transistor. The output MOSFET has an intrinsic body diode , turns off the output MOSFET if the die temperature exceeds approximately 170°C. Thermal shut down , MIC2514 MIC2514 is an integrated high-side power switch that co n s is ts o f a TTL c o m p a tib le in p u t and p ro te cte d P-channel MOSFET. The MIC2514 MIC2514 can be used instead of a separate high-side driver and MOSFET in many lowvoltage applications. The MIC2514 MIC2514 switches voltage ranging from 3V to 13.5V and ... OCR Scan
datasheet

5 pages,
190.34 Kb

MIC2514 MIC2514 abstract
datasheet frame
Abstract: CHARACTERISTICS PER TRANSISTOR SYMBOL TEST CONDITIONS VGS=20V, VDS=0V 'GSSF VGS=20V, VDS=0V 'g s s r V DS=60V , CMLDM7002A CMLDM7002A CMLDM7002AJ CMLDM7002AJ* SURFACE MOUNT PICOminiT I DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central DESCRIPTION: TM Semiconductor Corp The C E N T R A L S E M IC O N D U C T O R CMLDM7002A CMLDM7002A , Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver , pinout configuration. These special Dual Transistor devices offers low r^g^o^) and low V ^ g ^ qn ... OCR Scan
datasheet

2 pages,
68.27 Kb

S 170 MOSFET TRANSISTOR CMLDM7002A CMLDM7002AJ CMLDM7002A abstract
datasheet frame
Abstract: Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced , Power MOSFET Transistor Device Data 4-1085 M TY 20N 50E ELECTRICAL CHARACTERISTICS ( T j = 25°C , L-S - nH 7.5 - 4-1086 Motorola TMOS Power MOSFET Transistor Device Data MTY20N50E MTY20N50E , 6. Draln-To-Source Leakage Current versus Voltage Motorola TMOS Power MOSFET Transistor Device , CapacitanceVariation 4-1088 Motorola TMOS Power MOSFET Transistor Device Data MTY20N50E MTY20N50E Figure 8. ... OCR Scan
datasheet

6 pages,
242.83 Kb

transistor TL 431 g transistor 667 7A S 170 MOSFET TRANSISTOR datasheet abstract
datasheet frame
Abstract: Power MOSFET Transistor Device Data 4 -987 M TV 25N 50E SAFE OPERATING AREA V D S , D R A IN , MOSFET Transistor Device Data 4 -983 M TV 25N 50E ELECTRICAL CHARACTERISTICS ( T j - 25 C unless , - nH 4-984 Motorola TMOS Power MOSFET Transistor Device Date M T V 25N 50E TYPICAL , Power MOSFET Transistor Device Data 4 -9 8 5 M T V 25N 50E POWER MOSFET SWITCHING Switching , Waveform 4 -988 Motorola TMOS Power MOSFET Transistor Device Data ... OCR Scan
datasheet

6 pages,
267.44 Kb

501 mosfet transistor datasheet abstract
datasheet frame
Abstract: Philips Semiconductors Product specification PowerMOS transistor BUK107-50GL BUK107-50GL Logic level TOPFET_ _ DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount , overload protection reset by input · 5 V logic compatible input level · Control of power MOSFET and supply , o/v CLAMP INPUT RIG POWER MOSFET LOGIC AND PROTECTION id SOURCE Fig.1. Elements of the , PowerMOS transistor Logic level TOPFET LIMITING VALUES Limiting values in accordance with the Absolute ... OCR Scan
datasheet

7 pages,
352.53 Kb

BUK107-50GL BUK107-50GL abstract
datasheet frame
Abstract: 13-34 Motorola TM O S Power MOSFET Transistor Device Data b3 b7 2 5 4 G l G 3 n G ATT , entary T M O S Power M O S F E T H Bridge with Schottky Rectifiers in th e ICePAKTM package is designed , TMOS POWER MOSFET H-BRIDGE 16 AMPERES 60 VOLTS 11 o - CASE 806-05 3 4 12 9 Complementary H-Bridge , Voltage Drain-to-Gate Voltage (Rg s = 1-0 MU) Gate-to-Source Voltage Drain Current - Continuous - Pulsed , Thermal Resistance (Transistor) - Junction to Case - Junctton-to-Ambient Thermal Resistance (Schottky ... OCR Scan
datasheet

2 pages,
120.74 Kb

MPM3008 IcePak Case 806-05 datasheet abstract
datasheet frame
Abstract: capability. This package line includes large current switching transistor series, power MOS FET series, and , No. ole L o w O n - R e s i s t a n c e P o w e r M O S F E T *Low-voltage drive. For P channel (- , typ (S) 3 4 2 4 4 5 2 4 1.3 2 R d S (on) Low On-Resistance. *Very High-speed switching. PD , 450/650 180/260 135/177 VGS=10V typ/max (m Q ) (pF) 120/160 60/80 300/400 130/170 700/950 300/400 , p o s F X 6 0 1 F X 6 0 2 F X 6 0 3 F X 6 0 4 F X 6 0 5 F X 6 0 6 F X 6 0 7 F X 6 0 8 F X 6 1 1 X P ... OCR Scan
datasheet

1 pages,
55.3 Kb

datasheet abstract
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/Space Optical Storage Power MOSFET Drivers Power Supply Support Special Analog Switches/MUXes Status Temp. Package MSL Price US $ ISL6504CB ISL6504CB ISL6504CB ISL6504CB Active Comm 16 Ld SOIC 1 1.70 ISL6504CB-T ISL6504CB-T ISL6504CB-T ISL6504CB-T Active Comm 16 Ld SOIC T+R 1 1.70 ISL6504CBN ISL6504CBN ISL6504CBN ISL6504CBN Active Comm 16 Ld SOIC bridge and the PCI slots through an external NPN pass transistor during sleep states (S3, S4/S5). In pass MOSFET to connect the outputs directly to the 3.3V input supplied by an ATX power supply, for
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Intersil 07/09/2006 31.02 Kb HTML device_isl6504.html
FEATURE SIZE POWER MOSFET STP80NE06-10 STP80NE06-10 STP80NE06-10 STP80NE06-10 Document Format Size Document ENHANCEMENT MODE " SINGLE FEATURE SIZE ] " POWER MOSFET n TYPICAL R DS(on) = 0.0085 W n EXCEPTIONAL This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size ] " strip-based process. The resulting transistor shows extremely high packing density for low area ( 1 ) I SD 3 80 A, di/dt 3 300 A/ m s, V
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STMicroelectronics 20/10/2000 9.93 Kb HTM 5632.htm
STP80NE06-10 STP80NE06-10 STP80NE06-10 STP80NE06-10 N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Document ENHANCEMENT MODE " SINGLE FEATURE SIZE ] " POWER MOSFET n TYPICAL R DS(on) = 0.0085 W n EXCEPTIONAL dv/dt CAPABILITY n 100% AVALANCHE TESTED n APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is transistor shows extremely high packing density for low on-resistance, rugged avalanche ( 1 ) I SD 3 80 A, di/dt 3 300 A/ m s, V DD 3 V (BR)DSS , T j 3 T JMAX TYPE V DSS R DS(on) I D
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STMicroelectronics 02/04/1999 7.49 Kb HTM 5632-v1.htm
STP20NE10 STP20NE10 STP20NE10 STP20NE10 N-CHANNEL 100V - 0.07 OHM - 20A - TO-220 STRIPFET MOSFET Document Number 20A - TO-220 STripFET ] MOSFET n TYPICAL R DS(on) = 0.07 W n EXCEPTIONAL dv/dt CAPABILITY n 100% AVALANCHE TESTED n APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size ] " strip-based process.The resulting transistor operating area ( 1 ) I SD 3 20 A, di/dt 3 300 A/ m s, V DD 3 V
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6050-v1.htm
STMicroelectronics 02/04/1999 7.44 Kb HTM 6050-v1.htm
0.07 OHM - 20A - TO-220 STRIPFET MOSFET STP20NE10 STP20NE10 STP20NE10 STP20NE10 Document Format STP20NE10 STP20NE10 STP20NE10 STP20NE10 N - CHANNEL 100V - 0.07 W - 20A - TO-220 STripFET ] MOSFET n TYPICAL R DS(on ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size ] " strip-based process.The resulting transistor shows extremely ) I SD 3 20 A, di/dt 3 300 A/ m s, V DD 3 V (BR)DSS , T j 3 T JMAX
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STMicroelectronics 25/05/2000 9.26 Kb HTM 6050-v3.htm
STP20NE10 STP20NE10 STP20NE10 STP20NE10 N-CHANNEL 100V - 0.07 OHM - 20A - TO-220 STRIPFET MOSFET Document Number 20A - TO-220 STripFET ] MOSFET n TYPICAL R DS(on) = 0.07 W n EXCEPTIONAL dv/dt CAPABILITY n 100% AVALANCHE TESTED n APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size ] " strip-based process.The resulting transistor operating area ( 1 ) I SD 3 20 A, di/dt 3 300 A/ m s, V DD 3 V
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STMicroelectronics 14/06/1999 7.4 Kb HTM 6050-v2.htm
STP80NE06-10 STP80NE06-10 STP80NE06-10 STP80NE06-10 N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Document ENHANCEMENT MODE " SINGLE FEATURE SIZE ] " POWER MOSFET n TYPICAL R DS(on) = 0.0085 W n EXCEPTIONAL dv/dt CAPABILITY n 100% AVALANCHE TESTED n APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is transistor shows extremely high packing density for low on-resistance, rugged avalanche ( 1 ) I SD 3 80 A, di/dt 3 300 A/ m s, V DD 3 V (BR)DSS , T j 3 T JMAX TYPE V DSS R DS(on) I D
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STMicroelectronics 14/06/1999 7.45 Kb HTM 5632-v2.htm
ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET STP80NE06-10 STP80NE06-10 STP80NE06-10 STP80NE06-10 Document Format STP80NE06-10 STP80NE06-10 STP80NE06-10 STP80NE06-10 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE ] " POWER MOSFET n TYPICAL R DS ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size ] " strip-based process. The resulting transistor shows ( 1 ) I SD 3 80 A, di/dt 3 300 A/ m s, V DD 3 V (BR)DSS , T j 3 T
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STMicroelectronics 25/05/2000 9.33 Kb HTM 5632-v3.htm
TO-220 STRIPFET MOSFET STP20NE10 STP20NE10 STP20NE10 STP20NE10 Document Format Size Document Number TO-220 STripFET ] MOSFET n TYPICAL R DS(on) = 0.07 W n EXCEPTIONAL dv/dt CAPABILITY n 100% AVALANCHE TESTED n APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size ] " strip-based process.The resulting transistor ( 1 ) I SD 3 20 A, di/dt 3 300 A/ m s, V DD 3 V (BR)DSS , T j 3 T JMAX TYPE V DSS
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STMicroelectronics 20/10/2000 9.86 Kb HTM 6050.htm
HIGH DENSITY" POWER MOS TRANSISTOR STP40N03L-20 STP40N03L-20 STP40N03L-20 STP40N03L-20 Document Format Size ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA n TYPICAL R DS(on) = 0.016 I D = 20 A 15 22 S C iss C oss C rss Input Capacitance Output Capacitance Reverse (see test circuit, figure 5) 200 A/ m s Q g Q gs Q gd Total Gate Charge Gate-Source Charge di/dt = 100 A/ m s V DD = 24 V T j = 150 o C (see test circuit, figure 5) 65 0.12 4
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STMicroelectronics 20/10/2000 11.71 Kb HTM 4886.htm