RURD410 RURD415 RURD420 RURD410S RURD415S RURD420S TA49034 RUR410 RUR415 RUR420

RURD410, RURD415, RURD420, RURD410S, RURD415S, RURD420S 4A, 100V - 200V Ultrafast Diodes March 1997 Features Package ·

S E M I C O N D U C T O R RURD410 RURD410, RURD415 RURD415, RURD420 RURD420, RURD410S RURD410S, RURD415S RURD415S, RURD420S RURD420S 4A, 100V - 200V Ultrafast Diodes March 1997 Features Package · Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . tRR t3 > 0 L1 tA(MIN) R4 10 Q2 Q1 +V1 0 IF LLOOP t2 R2 t1 dIF dt tRR tA tB 0 DUT Q4 0.25 IRM t3 IRM C1 0 R4 VR Q3 -V2 R3 -V4 VRM FIGURE 2. tRR WAVEFORMS AND DEFINITIONS FIGURE 1. tRR TEST CIRCUIT 5-22 RURD410 RURD410, RURD415 RURD415, RURD420 RURD420, RURD410S RURD410S, RURD415S RURD415S, RURD420S RURD420S Typical Performance Curves 100 20 IR , REVERSE CURRENT (µA) IF , FORWARD CURRENT (A) +175oC +175oC 10 +100oC o +25 C 1 10 1 +100oC 0.1 0.01 +25oC 0.001 0.5 0 0.25 0.5 0.75 1 1.25 1.5 0 50 VF , FORWARD VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP 150 200 FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE TC = +25oC 25 TC = +100oC 50 20 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 100 VR , REVERSE VOLTAGE (V) tRR 15 tA 10 tB 5 0 0.5 tRR 30 tA 20 tB 10 0 4 1 40 0.5 4 1 IF , FORWARD CURRENT (A) IF , FORWARD CURRENT (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT TC = +175oC 80 IF(AV) , AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) 100 tRR 60 tA 40 tB 20 0 0.5 1 4 IF , FORWARD CURRENT (A) 5 4 DC 3 SQ. WAVE 2 1 0 150 155 160 165 170 175 o TC , CASE TEMPERATURE ( C) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES 5-23 RURD410 RURD410, RURD415 RURD415, RURD420 RURD420, RURD410S RURD410S, RURD415S RURD415S, RURD420S RURD420S IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 130 L R + VDD 1M DUT 12V VAVL Q2 CURRENT SENSE 130 IL IL I V VDD 12V t0 FIGURE 9. AVALANCHE ENERGY TEST CIRCUIT t1 t2 t FIGURE 10. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. Sales Office Headquarters For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS 1-800-4-HARRIS UNITED STATES Harris Semiconductor 1301 Woody Burke Road Melbourne, Florida 32902 TEL: (407) 724-3000 EUROPE Harris Semiconductor Mercure Centre Rue de la Fusee, 100 1130 Brussels, Belgium TEL: (32) 2-724-2111 SOUTH ASIA Harris Semiconductor H.K. Ltd. 13/F Fourseas Building 208-212 Nathan Road Tsimshatsui, Kowloon Hong Kong TEL: (852) 723-6339 S E M I C O N D U C TO R 5-24 NORTH ASIA Harris K.K. Shinjuku NS Bldg. Box 6153 2-4-1 Nishi-Shinjuku Shinjuku-Ku, Tokyo 163 Japan TEL: (81) 3-3345-8911