RT1N150 RT1P150 SC-88 JEITASC-88

RT3TSSM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unitmm

PRELIMINARY RT3TSSM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unitmm RT3TSSM is compound transistor built with RT1N150 RT1N150 chip and RT1P150 RT1P150 chip in SC-88 SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit TERMINAL CONNECTOR EMITTER1 BASE1 COLLECTOR2 EMITTER2 BASE2 :COLLECTOR1 R1 RTr1 RTr2 R1 JEITASC-88 JEITASC-88 MAXIMUM RATING (Ta=25) (RTr1_NPN, RTr2_PNP) SYMBOL RATING UNIT VCBO Collector to Base voltage PARAMETER 50 V VEBO Emitter to Base voltage 6 V VCEO Collector to Emitter voltage 50 V IC Collector current 100 mA ICM Peak Collector current 200 mA PC Collector dissipationTotal, Ta=25 150 mW Tj Junction temperature 150 Tstg Storage temperature -55150 MARKING PNP built in transistor of ""sign is abbreviation. ISAHAYA ELECTRONICS CORPORATION 6 5 4 .T S S 2 3 PRELIMINARY RT3TSSM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25) (RTr1_NPN, RTr2_PNP) Symbol Parameter Limits Test conditions V(BR)CEO Collector to Emitter break down voltage Collector cut off current VCB =50V,IE=0 hFE DC forward current gain VCE=5V,IC=1mA VCE(sat) Collector to Emitter saturation voltage IC=1mA,IB=0.1mA Input resistor R1 Max - - V - - 0.1 A 100 - - - - 0.1 0.3 V - - Gain band width product fT Typ 50 IC=100A,RBE= ICBO RTr1 RTr2 VCE=6V,IE=10mA 100 - k - 200 150 - MHZ PNP built in transistor of ""sign is abbreviation. TYPICAL CHARACTERISTICS RTr1_NPN DC FORWARD CURRENT GAIN VS COLLECTOR CURRENT 10000 INPUT ON VOLTAGE VS COLLECTR CURRENT 10 VCE=0.2V INPUT ON VOLTAGE VI(on) (V) DC FORWARD CURRENT GAIN hFE VCE=5V 1000 100 10 1 0.1 0.1 1 10 100 1 10 COLLECTOR CURRENTIC(mA) COLLECTOR CURRENTIC(mA) COLLECTOR CURRENT VS INPUT OFF VOLTAGE 1000 COLLECTOR CURRENT IC (A) VCE=5V 100 10 0.0 0.5 1.0 1.5 Unit Min 2.0 INPUT OFF VOLTAGE VI(off) (V) ISAHAYA ELECTRONICS CORPORATION 100 PRELIMINARY RT3TSSM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type TYPICAL CHARACTERISTICS RTr2_PNP 1000 DC FORWARD CURRENT GAIN VS COLLECTOR CURRENT INPUT ON VOLTAGE VS COLLECTR CURRENT -10 VCE=-0.2V INPUT ON VOLTAGE VI(on) (V) DC FORWARD CURRENT GAIN hFE VCE=-5V 100 10 1 -0.1 -0.1 -1 -10 -100 -1 -10 COLLECTOR CURRENTIC(mA) COLLECTOR CURRENTIC(mA) -1000 -1 COLLECTOR CURRENT VS INPUT OFF VOLTAGE COLLECTOR CURRENT IC (A) VCE=-5V -100 -10 -0.0 -0.5 -1.0 -1.5 -2.0 INPUT OFF VOLTAGE VI(off) (V) ISAHAYA ELECTRONICS CORPORATION -100 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Aug.2010