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HI5860IBZ Intersil Corporation 12-Bit, 130 MSPS, High Speed D/A Converter; SOIC28; Temp Range: -40° to 85°C visit Intersil Buy
HI5860IBZ-T Intersil Corporation 12-Bit, 130 MSPS, High Speed D/A Converter; SOIC28; Temp Range: -40° to 85°C visit Intersil Buy
ISL5629INZ Intersil Corporation Dual 8-bit, +3.3V, 130/210MSPS, CommLink™ High Speed D/A Converter; LQFP48; Temp Range: -40° to 85°C visit Intersil Buy
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ISL5729EVAL1 Intersil Corporation Dual 10-bit, +3.3V, 130/210+MSPS, CommLink™ High Speed D/A Converter; Temperature Range: 0&degC to 70°C; Package: 48-Eval Board visit Intersil
ISL5629EVAL1 Intersil Corporation Dual 8-bit, +3.3V, 130/210+MSPS, CommLink™ High Speed D/A Converter; Temperature Range: 0&degC to 70°C; Package: 48-Eval Board visit Intersil

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Part : RQW130N03FD5TB Supplier : ROHM Manufacturer : America II Electronics Stock : 2,294 Best Price : - Price Each : -
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RQW 130

Catalog Datasheet MFG & Type PDF Document Tags

js 8017

Abstract: RQW 130 features â'¢ 130 V//js Slew Rate â'¢ Fast Settling Time â'¢ 50 nA Input Current â'¢ 10 MHz Bandwidth â'¢ Simple Frequency Compensation â'¢ Short Circuit Protection general description The 8017 , 150 240 mW Slew Rate RBw = 20 ki2 130 130 V/jis Unity Gain Bandwidth (Note 3) rbw = 20 kil 10 , < Raw SANO WIDTH SLEW RATE IX 10 kn 10 k» 20 kfi 10 MHz 130 V/yj 10X lOkft 100 kiî 2 kfi 6 MHî 100 , still be unconditionally stable. However, for optimum frequency response, Rqw should be selected from
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OCR Scan
8017M 8017C ICL8017 js 8017 RQW 130 schematic diagram closed loop control temperature

RQW 130

Abstract: -01, -0 2 , & - 0 3 N/A) -LL: LOCKING LEAD -L A : -R A OPTION WITH -L L OPTION - RQW OPTION -D : DOUBLE - S : SINGLE L E A D STY LE "A" "B" _ -0 1 -0 2 -0 3 -0 4 -0 5 .480 .530 .930 .130 .230
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OCR Scan

RQW 130

Abstract: MRF911 0.61 0.60 0.61 140 135 130 125 125 140 135 130 130 130 10 0.63 0.56 0.53 0.52 0.53 160 150 145 145 145 2 FIGU RE 5 - $22 PARAMETERS F r«qw ney (MHz) VCE (V olti» 5.0 *C (mA) 2.0 5.0
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OCR Scan
MRF911 case 317-01

RQW130N03

Abstract: rqw200n03 TSMT6 1.25 US6K4 Page 130 2.5 Pch 1 VGS=4.5V 2 0.7 0.7 2 0.7 Nch TUMT6 , P.5 130 66 1 Nch RUR040N02 20 4 55 33 25 Pch RZR040P01 ­12 , 220 170 ­ 130 ­ 1.8 QS5U36 20 2.5 120 95 74 ­ 58 ­ 3.5 , =4.5V 2 0.7 2 0.7 Internal Circuitry ­ ­ 0.8 0.7 1.5 1 1 220 170 130 ­ , 36 26 1 TSMT6 1.25 1 220 ­ US6K4 20 1.5 170 130 Nch
ROHM
Original
RQW130N03 rqw200n03 sp8k10s SP8K10 mosfet rqw 130 RQA200N03 2007-D SC-63 50P5842E

RQW 130

Abstract: tlOH-tm33X CYPRESS SEMICONDUCTOR CYPRESS 4bE ]> B SSälLkS 0007020 ? E -r-q^-w CT7C331 4bE D ICYP zjr , CY7C331-20 130 20 12 20 CY7C331-25 120 160 25 25 12 15 25 25 CY7C331-30 150 30 15 30 CY7C331 , Programming Voltage.13.0 V Operating Range Range Ambient Temperature Vcc Commercial , Vcc = Max., Vim = GND, Outputs Open Com'l -20 130 mA Com'l -25, -35 120 Mil -25 160 mA , (ns) Ordering Code Package TJ-pe Operating Range 130 20 12 20 CY7C331-20HC H64 Commercial
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OCR Scan
tlOH-tm33X ELLS 110 CY7C331-20JC CY7C331-20PC CY7C331-20WC CY7C331-25DMB CY7C331-25HMB CY7C331-25LMB

c9ab

Abstract: marking w53 PACKAGE 1. 2. MIN NOM MAX NOTE A 1.10 1.20 1.30 PROFILE A1 0.20
Spansion
Original
S75NS128NDE c9ab marking w53 S29NS-N w933 S72WS-N

RQW 130

Abstract: RP144LD 1 3 4 6 8 9 10 11 12 64 65 66 67 68 69 MCU EXTERNAL BUS 130 72 86 32 MCU , 123 RESERVED ~DSR 126 125 RINGD ~RI 128 127 IRQ ~RTS 130 129 , 124 125 126 127 128 129 130 131 132 SLEEPO RESERVED NOXTL RESERVED VGG RESERVED
Conexant Systems
Original
RP56LD RP336LD RP144LD RS2180 DQG53/ TM99ELV 90/K56

RS2180

Abstract: RP144LD 64 65 66 67 68 69 MCU EXTERNAL BUS 130 72 86 32 MCU: IRQ MCU: ~WKRESOUT MCU , 126 125 RINGD ~RI 128 127 IRQ ~RTS 130 129 GND RESERVED 132 131 , 120 121 122 123 124 125 126 127 128 129 130 131 132 SLEEPO RESERVED NOXTL RESERVED
Conexant Systems
Original
RP336

514256BZ-70

Abstract: 514256BJ-70 SIEMENS 256 K X 4-Bit Dynamic RAM HYB 514256B/BJ/BZ-60/-70/-80 Low Power 256 K x 4-Bit Dynamic RAM HYB 514256BUBJL/BZL-60/-70 Advanced Information â'¢ 262 144 words by 4-bit Organization â'¢ Fast access and cycle time 60 ns access time 110 ns cycle time (HYB 514256B/BL-60) 70 ns access time 130 ns , .2 Clock Generator Column Address Buffers (9) Refresh Controller Refresh Countar (9) RQW Address Buffers (9 , -80 min. max. min. max. min. max. Random read or write cycle time 'rc 110 - 130 - 150 - ns
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OCR Scan
514256BZ-70 514256BJ-70 514256 514256b-70 CCC-13 514256b-60 514256B/BL-70 514256B-80 P-DIP-20-2 P-SOJ-26/20-1 P-ZIP-20/19-1 514256B/BL
Abstract: E DQO ⺠to DQ7 Memory Array 524,288 X 8 Cells A 0 ~ A 9 - ^ l RQW Address Buffer , Access time from RAS Min -6 Max 90 tRAC Min -7 Max Max 130 110 132 , 110 130 ns 11 -50 -50 ns 11 RAS precharge time (C-B-R self refresh) tRPS -
OCR Scan
KM48C512DT KM48C512D/DL KM48V512D/DL QD35421

RQW 130

Abstract: VXK marking 7KH PD[LPXP .RQWLQXRXV YROWDJH 9 .RQW LV WKH PD[LPXP SHUPLVVLEOH YROWDJH DW ZKL.K WKH .DSD.LWRU .DQ EH , & & & 80 100 C 130 T 0D[LPXP YDOXHV IRU VWDQGDUG UDQJH 0D[LPXP YDOXHV IRU H[WHQGHG , ¦3HUIRUPDQ.H§ & & VHULHV :LWKLQ WKH - WR & UDQJH WKH PD[LPXP .RQWLQXRXV YROWDJH 9 .RQW PD\ EH HTXDO WR
EPCOS
Original
VXK marking KTA0216-W

RQW 130

Abstract: A10q OUT BUFFffl zr CONIBOUjÅ" -1 RQW PREDECOCER ra RASCUXX M oeevoraR ROW DECO») COLUMN DECO» SBJSEAMP , -60 -70 â'¢80 MIN. MAX. MIN. MAX. MIN. MAX. 1 tRC Random Read or Write Cycle Time 110 - 130 , 60 tRPS RAS Hold Time (Self Refresh Cycle) 110 - 130 - 150 - ns 61 tCHS CAS Hold Time (¡self
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OCR Scan
A10q HY51V16400A V16400A 1AD31-00-MAY95 QD0MH08 1271BSC 0QD441Q

din 82 RGV

Abstract: S73WS256N | Refresl^Counter~| 4 , 1 9 4 ,3 0 4 X 16 Cells A 0 ~A 12 * |rqw Address Buffer)- (A0~A11)-1 AO ~A8 , Don't care -5 -6 -7 110 100 90 150 140 130 mA mA mA |CC 2 Normal L Don't care 2 2 2 2 mA mA |C C 3 Don't care -5 -6 -6 110 100 90 150 140 130 , Normal L 500 300 500 300 pA |C C 6 Dont care -5 -6 -7 150 140 130 150 140 130 mA mA mA |C C 7 L Dont care 550 550 f jA Iccs L Don't care 450
Spansion
Original
S73WS256N din 82 RGV 32M/16M
Abstract: Refresh Counter I I A 0 ~ A 12 Memory Array 4,194,304 X 16 - Cells * |rqw Address , 100 90 150 140 130 mA mA mA |C C 2 Normal L Don't care 2 2 2 2 mA mA |C C 3 Don't care -5 -6 -6 110 100 90 150 140 130 mA mA mA |C C 4 Don't , 500 300 ¡jK pA |C C 6 Don't care -5 -6 -7 150 140 130 150 140 130 mA mA -
OCR Scan
KM416V4000AS KM416V4000A/A-L KM416V4100A/A-L KM416V4000A KM416V4100A DQ0-DQ15

KM416V4104AS

Abstract: 4,194,304 X 4 Cells AO -A11 _ ¿ J rqw Address Buffer} (A0~A10)*1 AO ~A9 _ U c o l . Address Butter , Max Min 110 -50 -6 Max Min 130 -50 -7 Max Units Notes ns ns 12 12 RAS préchargé time (Ü-B-R self
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OCR Scan
KM416V4104AS KM416V4004A/A-L KM416V4104A/A-L KM416V4004A KM416V4104A D033T

304X4

Abstract: EH18 Buffer » I rqw Address Bufierf ^ [Col. Address Buffer } Lower Data out Butler 1 ,0 4 8 ,5 7 , 120 110 100 130 120 110 100 130 120 110 100 mA mA mA IC C 5 Normal L Donâ , 5 5 5 ns 100 100 100 100 us 79 90 110 130 ns 11 -50
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OCR Scan
304X4 EH18 KM44V4104BS KM44C4004B/B-L KM44C4104B/B-L KM44V4004B/B-L KM44V4104B/B-L 44V4104BS
Abstract: Maximum standby current 160 150 130 120 mA Maximum CMOS standby current (DC) 70 70 , , f = fmax ­ 160 ­ 150 ­ 130 ­ 120 ISB1 Deselected, f = 0, all VIN , 'RQ¶W FDUH 8QGHILQHG TAP AC electrical characteristics For notes 1 and 2, +10oC TJ +110oC and -
OCR Scan
KM416V1004BT KM416C1004B/B-L KM416C1204B/B-L KM416V1004B/B-L KM416V1204B/B-L

AS7C33512NTD36A

Abstract: 3.8 ns Maximum operating current 400 350 325 mA Maximum standby current 130 , , Iout = 0 mA ­ 400 ­ 350 ­ 325 mA ISB Deselected, f = fmax ­ 130 ­ , '97+ W7+'; 7HVW 'DWD2XW 7'2 'RQ¶W FDUH 8QGHILQHG TAP AC electrical characteristics For notes 1
Alliance Semiconductor
Original
AS7C33512NTD36A AS7C33512NTD32A

AS7C33512NTD36A

Abstract: W097 150 130 120 mA Maximum CMOS standby current (DC) 70 70 70 70 mA Y , = fmax ­ 160 ­ 150 ­ 130 ­ 120 ISB1 Deselected, f = 0, all VIN 0.2V , 'RQ¶W FDUH 8QGHILQHG TAP AC electrical characteristics For notes 1 and 2, +10oC TJ +110oC and
Alliance Semiconductor
Original
W097
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