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RN6003 Datasheet

Part Manufacturer Description PDF Type
RN6003 Toshiba Pre-Biased Digital Transistor Original
RN6003 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan

RN6003

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Voltage Transition Frequency TEST SYMBOL MEASURING CIR­ Tr CUIT RN6003 â'" hFE 1 RN2425 â'" hFE 2 RN5006 â'" hFE 3 RN6003 â'" V CE 1 RN2425 â'" V CE 2 RN5006 â'" V CE 3 â'" 'OFF R1 RN6003 â'" RN2425 â'" R2 R' RN2425 TEST CONDITION MIN. TYP. MAX. V c e = - , = 300mA â'" 0.89 1.2 V fT1 fT2 *T3 RN6003 RN2425 RN5006 â'" â'" â'" V -
OCR Scan
TA8303F 8303F SSOP16 SSOP16-P-225-1
Abstract: RN6003 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN6003 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Small flat package , temperature range * : Mounterd on ceramic substrate (250mm2 × 0.8t) 1 2001-06-07 RN6003 , 2 V 2001-06-07 RN6003 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is Toshiba
Original
RN5003 SC-62
Abstract: Weight : 0.14g (Typ.) & dp d G RN6003 RN2425 a RN6003 470Q, RN2425 Q4 W RN6003 , CONDITION MIN. TYP. MAX. UNIT Current Gain hFE 1 RN6003 â'" Vce= - 2V, Iq = -500mA 100 400 â'" hFE 2 RN2425 â'" Vce = - 1V, \q = - 100mA 100 â'" â'" Saturation Voltage VCE 1 RN6003 â'" \q = -500mA, \q , RN6003 â'" VCC = 7V â'" â'" 1.0 jua RN2425 Input Resistance R1 RN6003 â'" 7 10 13 k n R2 , fT1 RN6003 â'" Vce = -2V, \q = -500mA â'" 120 â'" MHz fT2 RN2425 â'" Vce = - 5V, Iq= -100mA â'" 200 -
OCR Scan
TA8300F RN600 980910EBA2
Abstract: Weight : 0.14g (Typ.) toto to to d G RN6003 RN2425 a RN6003 470Q, RN2425 Q4 WW .a 05 RN6003 470(2 RN2425 Q6 Tv 0> 1 2001-06-27 TOSHIBA TA8300F FUNCTION DESCRIPTION ON , Current Gain hFE 1 RN6003 â'" Vce= - 2V, Iq = -500mA 100 400 â'" hFE 2 RN2425 â'" Vce = - 1V, \q = - 100mA 100 â'" â'" Saturation Voltage VCE 1 RN6003 â'" \q = -500mA, \q= -50mA -0.5 â'" â'" V VCE 2 RN2425 â'" \q = -50mA, Ib = - 1mA -0.5 â'" â'" V Leakage Current 'OFF RN6003 â'" VCC = 7V â'" â'" 1.0 -
OCR Scan
500mA H-bridge
Abstract: TEST CIRCUIT TEST CONDITION MIN. TYP. MAX. UNIT Current Gain hFE 1 RN6003 â'" Vce= - 2V, Iq = -500mA , = 500mA 160 â'" 600 Saturation Voltage VCE 1 RN6003 â'" \q = -500mA, \q= -50mA -0.5 â'" â'" V , '" â'" 0.5 V Leakage Current 'OFF â'" VCC = 7V â'" â'" 1.0 jua Input Resistance R1 RN6003 â'" 7 10 , Forward Voltage vF RN5006 â'" lp = 300mA â'" 0.89 1.2 V Transition Frequency fT1 RN6003 â'" Vce = -2V, lc -
OCR Scan
Abstract: Tr CUIT RN6003 - hpE 1 RN2425 - hFE 2 RN6003 - VCE 1 RN2425 - VCE 2 RN6003 - 'OFF RN2425 RN6003 - Ri RN2425 - *2 RN2425 - Rr RN6003 - fT1 RN2425 - fT2 TEST CONDITION VCE= VCE = \q = lç = - 2V -
OCR Scan
Abstract: Frequency TEST SYM BO L MEASURING CIR­ Tr CUIT RN6003 â'" h FE 1 RN2425 â'" h FE 2 RN6003 â'" V CE 1 RN2425 â'" VCE 2 RN6003 â'" 'OFF RN2425 R1 RN6003 â'" RN2425 â'" R 2 RN2425 â'" R2' RN6003 â'" fT1 â'" RN2425 fT2 TEST CONDITION Vc e Vc e lc = lç = MIN. TYP -
OCR Scan
8300F
Abstract: Tr CUIT RN6003 - hpE 1 - RN2425 hFE 2 - RN5006 hFE 3 - RN6003 VCE 1 RN2425 - VCE 2 RN5006 - VCE 3 - 'OFF - RN6003 R1 - RN2425 R2 R' RN2425 - vF fT1 fT2 fT3 RN5006 RN6003 RN2425 RN5006 - -
OCR Scan
Abstract: CONDITION SYMBOL MEASURING CIR Tr CUIT RN6003 - VCE = - 2V, lc = -500mA hpE 1 - VCE = - IV, lc= -100mA RN2425 hFE 2 - V c e = 1V, lc = 500mA RN5006 hFE 3 - lç = - 500mA, Iß = - 50mA RN6003 VCE 1 RN2425 - , RN6003 RN2425 RN2425 RN5006 RN6003 RN2425 RN5006 - - - - - VCC =7V A kn kn lF = 300mA -
OCR Scan
TA8304F
Abstract: Gain hFE 1 RN6003 â'" Vce= - 2V, Iq = -500mA 100 â'" 400 hFE 2 RN2425 â'" Vce = - 1V, \q = - 100mA 100 â'" â'" hFE 3 RN5006 â'" Vce = 1V, lc = 500mA 160 â'" 600 Saturation Voltage VCE 1 RN6003 â , jua Input Resistance R1 RN6003 â'" 7 10 13 k n R2 RN2425 â'" 0.329 0.47 0.61 kO Resistance Ratio , Transition Frequency fT1 RN6003 â'" Vce = -2V, lc = -500mA â'" 120 â'" MHz fT2 RN2425 â'" Vce = - 5V, lc = -
OCR Scan
Abstract: RN6003 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN6003 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Small flat package l PC = , °C Marking * : Mounterd on ceramic substrate (250mm2 × 0.8t) 1 2001-10-29 RN6003 , RN6003 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the Toshiba
Original
Abstract: RN6003 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN6003 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Small flat package PC = 12W (mounted on ceramic substrate) Complementary to RN5003 Equivalent Circuit JEDEC EIAJ , 1/2 RN6003 Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Collector Toshiba
Original
961001EAA2
Abstract: SYMBOL MEASURING Tr TEST CIRCUIT TEST CONDITION MIN. TYP. MAX. UNIT Current Gain hFE 1 RN6003 â'" Vce= - , â'" Vce = 1V, lc = 500mA 160 â'" 600 Saturation Voltage VCE 1 RN6003 â'" \q = -500mA, \q= -50mA , RN6003 â'" 7 10 13 k n R2 RN2425 â'" 0.329 0.47 0.61 kO Resistance Ratio R' RN2425 â'" 0.042 â'" 0.051 Diode Forward Voltage vF RN5006 â'" lp = 300mA â'" 0.89 1.2 V Transition Frequency fT1 RN6003 â -
OCR Scan
Abstract: CONDITION MIN. TYP. MAX. UNIT Current Gain hFE 1 RN6003 â'" Vce= - 2V, Iq = -500mA 100 â'" 400 hFE 2 , Saturation Voltage VCE 1 RN6003 â'" \q = -500mA, \q= -50mA -0.5 â'" â'" V VCE 2 RN2425 â'" Ic = - 50mA, Ib , â'" VCC = 7V â'" â'" 1.0 jua Input Resistance R1 RN6003 â'" 7 10 13 k n R2 RN2425 â'" 0.329 , = 300mA â'" â'" 1.2 V Transition Frequency fT1 RN6003 â'" Vce = -2V, lc = -500mA â'" 120 â'" MHz -
OCR Scan
TDA 2060
Abstract: RN6003 (RN6003) M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER A M PLIFIER APPLICATIONS. PO W ER SW IT C H IN G APPLICATIONS. 1.7 M A X . Unit in mm 0.4±0.Q 5 With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process Small Flat Package P q = 1~2W (Mounted on Ceramic substrate) Complementary to RN5003 EQ U IVALEN T CIRCUIT -0 = + 0 .08 0.4 5 - 0 .0 5 + 0.0 8 0.4 - 0 .0 5 + 0 .0 8 0.4 - 0 .0 5 R = 10k0 (TYP.) M A X IM U M R ATING S (Ta -
OCR Scan
Abstract: RN6003 â'" hFE 1 RN2425 â'" hFE 2 RN5006 â'" hFE 3 RN6003 â'" V CE 1 RN2425 â'" V CE 2 RN5006 â'" V CE 3 â'" 'OFF R1 RN6003 â'" RN2425 â'" R2 R' RN2425 â'" TEST CONDITION , â'" â'" fT1 fT2 *T3 RN6003 RN2425 RN5006 â'" â'" â'" V ç e = - 2V, lç = - -
OCR Scan
Abstract: T O SH IB A RN6003 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN6003 Unit in mm MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. 4.6MAX. 1.7 MAX. With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process Small Flat Package P q = 1~2W (Mounted on Ceramic substrate) Complementary to RN5003 - 0 = + 0 .0 8 0 .4 5 - 0 . 0 5 +0.0 8 + 0 .0 8 0 .4 - 0 . 0 5 -
OCR Scan
Abstract: -1 -0.05 RN6002 PA/PSW/D -30 -30 -2 0.5 1 -0. 1 -30 100 360 -2 -0.5 -0.5 -1.2 -1 -0.05 RN6003 PA , 120* -2 -0.5 40» R1 10K SC-62 ECB, R RN6003 140» -1 -0. 5 55» R1 10K SC-62 ECB, R -
OCR Scan
RNZ501 RN2503 RN2504 RN2505 RN2506 RN2507 8N1606 RT1P137P RT1N140S RT1N140C RT1N137P RT1N137L RS/2502
Abstract: SILICON PNP EPITAXIAL TYPE RN6003 Unit in mm 1.7 MAX. 0 -4 ± 0 .0 5 ^ MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process Small Flat Package PC = 1~2W (Mounted on Ceramic substrate) Complementary to RN5003 EQUIVALENT CIRCUIT + 0 .0 8 0.4 5 -0 .0 5 + 0.0 8 0.4 -0 .0 5 + 0 .0 8 0 .4 -0 .0 5 R= lOkfi (TYP.) M A X IM U M RATINGS (Ta = 25°C) 1 -
OCR Scan
Abstract: RN5003 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN5003 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Small flat package PC = 12W (mounted on ceramic substrate) Complementary to RN6003 Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 0.05g Maximum Ratings (Ta = 25°C) ° Characteristic SC-62 2-5K1A Marking Toshiba
Original
Abstract: RN5003 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN5003 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Small flat package PC = 12W (mounted on ceramic substrate) Complementary to RN6003 Equivalent Circuit JEDEC EIAJ TOSHIBA SC-62 2-5K1A Weight: 0.05g Maximum Ratings (Ta = 25°C) ° Characteristic Marking Toshiba
Original
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