NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| RN6003 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan |  |
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| RN6003 | Toshiba | Pre-Biased Digital Transistor |
3 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: : 0.14g (Typ.) & dp d G RN6003 RN2425 RN2425 a RN6003 470Q, RN2425 RN2425 Q4 W RN6003 470(2 , CONDITION MIN. TYP. MAX. UNIT Current Gain hFE 1 RN6003 - Vce= - 2V, Iq = -500mA 100 400 - hFE 2 RN2425 RN2425 - Vce = - 1V, \q = - 100mA 100 - - Saturation Voltage VCE 1 RN6003 - \q = -500mA, \q= -50mA -0.5 - - V VCE 2 RN2425 RN2425 - \q = -50mA, Ib = - 1mA -0.5 - - V Leakage Current 'OFF RN6003 - VCC = 7V - - 1.0 jua RN2425 RN2425 Input Resistance R1 RN6003 - 7 10 13 k n R2 RN2425 RN2425 - 0.329 0.47 0.61 kO ... | OCR Scan |
4 pages, |
TA8300F SSOP16 RN600 RN2425 RN6003 TA8300F abstract |
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| Abstract: : 0.14g (Typ.) toto to to d G RN6003 RN2425 RN2425 a RN6003 470Q, RN2425 RN2425 Q4 WW .a 05 RN6003 470(2 RN2425 RN2425 Q6 Tv 0> 1 2001-06-27 TOSHIBA TA8300F TA8300F FUNCTION DESCRIPTION ON EACH , Current Gain hFE 1 RN6003 - Vce= - 2V, Iq = -500mA 100 400 - hFE 2 RN2425 RN2425 - Vce = - 1V, \q = - 100mA 100 - - Saturation Voltage VCE 1 RN6003 - \q = -500mA, \q= -50mA -0.5 - - V VCE 2 RN2425 RN2425 - \q = -50mA, Ib = - 1mA -0.5 - - V Leakage Current 'OFF RN6003 - VCC = 7V - - 1.0 jua RN2425 RN2425 Input ... | OCR Scan |
5 pages, |
TA8300F SSOP16 RN6003 RN2425 500mA H-bridge TA8300F abstract |
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| Abstract: RN6003 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN6003 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Small flat package PC = 12W (mounted on ceramic substrate) Complementary to RN5003 RN5003 Equivalent Circuit JEDEC EIAJ , 1/2 RN6003 Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Collector ... | Original |
2 pages, |
RN5003 RN6003 RN6003 abstract |
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| Abstract: SYMBOL MEASURING Tr TEST CIRCUIT TEST CONDITION MIN. TYP. MAX. UNIT Current Gain hFE 1 RN6003 - Vce= - , 1V, lc = 500mA 160 - 600 Saturation Voltage VCE 1 RN6003 - \q = -500mA, \q= -50mA -0.5 - - V VCE , Leakage Current 'OFF - VCC = 7V - - 1.0 jua Input Resistance R1 RN6003 - 7 10 13 k n R2 RN2425 RN2425 - , 300mA - 0.89 1.2 V Transition Frequency fT1 RN6003 - Vce = -2V, lc = -500mA - - 120 MHz fT2 RN2425 RN2425 - ... | OCR Scan |
4 pages, |
TA8303F SSOP16 RN6003 RN5006 RN2425 TA8303F abstract |
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| Abstract: Current Gain hFE 1 RN6003 - Vce= - 2V, Iq = -500mA 100 - 400 hFE 2 RN2425 RN2425 - Vce = - 1V, \q = - 100mA 100 - - hFE 3 RN5006 RN5006 - Vce = 1V, lc = 500mA 160 - 600 Saturation Voltage VCE 1 RN6003 - \q = , 600mA, Ib = 20mA - - 0.5 V Leakage Current 'OFF - VCC = 7V - - 1.0 jua Input Resistance R1 RN6003 - , Forward Voltage vF RN5006 RN5006 - lp = 300mA - - 1.2 V Transition Frequency fT1 RN6003 - Vce = -2V, lc = -500mA ... | OCR Scan |
4 pages, |
TA8304F SSOP16 RN6003 RN5006 RN2425 TA8304F abstract |
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| Abstract: RN6003 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN6003 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Small flat package , temperature range * : Mounterd on ceramic substrate (250mm2 Ã- 0.8t) 1 2001-06-07 RN6003 , 2 V 2001-06-07 RN6003 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is ... | Original |
3 pages, |
RN6003 RN5003 RN6003 abstract |
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| Abstract: TEST CONDITION MIN. TYP. MAX. UNIT Current Gain hFE 1 RN6003 - Vce= - 2V, Iq = -500mA 100 - 400 hFE , Saturation Voltage VCE 1 RN6003 - \q = -500mA, \q= -50mA -0.5 - - V VCE 2 RN2425 RN2425 - Ic = - 50mA, Ib = - 1mA , jua Input Resistance R1 RN6003 - 7 10 13 k n R2 RN2425 RN2425 - 0.329 0.47 0.61 kO Resistance Ratio R' , fT1 RN6003 - Vce = -2V, lc = -500mA - - 120 MHz fT2 RN2425 RN2425 - Vce = - 5V, lc = -100mA - - 200 MHz ... | OCR Scan |
5 pages, |
TA8303F SSOP16 RN6003 RN5006 RN2425 TA8303F abstract |
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| Abstract: ) CHARACTERISTIC SYMBOL MEASURING Tr TEST CIRCUIT TEST CONDITION MIN. TYP. MAX. UNIT Current Gain hFE 1 RN6003 - , Vce = 1V, lc = 500mA 160 - 600 Saturation Voltage VCE 1 RN6003 - \q = -500mA, \q= -50mA -0.5 - - V , Leakage Current 'OFF - VCC = 7V - - 1.0 jua Input Resistance R1 RN6003 - 7 10 13 k n R2 RN2425 RN2425 - , 300mA - - 1.2 V Transition Frequency fT1 RN6003 - Vce = -2V, lc = -500mA - 120 - MHz fT2 RN2425 RN2425 - Vce ... | OCR Scan |
5 pages, |
TA8304F SSOP16 RN6003 RN5006 RN2425 TA8304F abstract |
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| Abstract: RN5003 RN5003 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN5003 RN5003 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Small flat package PC = 12W (mounted on ceramic substrate) Complementary to RN6003 Equivalent Circuit JEDEC EIAJ TOSHIBA SC-62 SC-62 2-5K1A Weight: 0.05g Maximum Ratings (Ta = 25°C) ° Characteristic Marking ... | Original |
3 pages, |
RN6003 RN5003 RN5003 abstract |
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| Abstract: PA/PSW/D -30 -30 -2 0.5 1 -0. 1 -30 100 360 -2 -0.5 -0.5 -1.2 -1 -0.05 RN6003 PA/PSW/D -30 -30 -2 , R1 5.6K SC-62 SC-62 ECB, R RN6002 RN6002 120* -2 -0.5 40» R1 10K SC-62 SC-62 ECB, R RN6003 140» -1 -0. 5 ... | OCR Scan |
2 pages, |
RT1P141C RN2504 RN2505 RN2506 RN2507 RN2508 RN2509 RN2510 RN2511 RS2603 RT1N137P RT1N140C RT1N140S RT1P137P RN2503 RNZ501 RS/2502 RNZ501 abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| RN6003 | N/A | Silicon PNP + Resistor | |