RN6002 RN5002 SC-62 961001EAA2

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN6002 Motor Drive Circuit Applications Power Amplifier Applications

RN6002 RN6002 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN6002 RN6002 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Small flat package PC = 12W (mounted on ceramic substrate) Complementary to RN5002 RN5002 Equivalent Circuit JEDEC EIAJ TOSHIBA SC-62 SC-62 2-5K1A Weight: 0.05g Maximum Ratings (Ta = 25°C) ° Characteristic Marking Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -2 A Base current IB -0.4 A Collector power dissipation PC 500 mW Collector power dissipation PC * 1000 mW Tj 150 °C Tstg -55~150 °C Junction temperature Storage temperature range * : Mounterd on ceramic substrate (250mm2 × 0.8t) 961001EAA2 961001EAA2 · TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 2000-09-14 1/2 RN6002 RN6002 Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Collector cut-offcurrent ICBO Emitter cut-off current IEBO V(BR)CES Characteristic Collector-emitter breakdown voltage DC current gain hFE (1) hFE (2) Min Typ. Max Unit VCB = -30V, IE = 0 -0.1 µA VEB = -5V, IC = 0 -0.68 -0.89 -1.28 mA IC = -10mA -30 V VCE = -2V, IC = -0.5A 100 360 VCE = -2V, IC = -2.0A 50 -0.5 Test Condition Collector-emitter saturation voltage VCE (sat) IC = -1A, IB = -0.05A Base-emitter saturation voltage VBE (sat) IC = -1A, IB = -0.05A -1.2 V fT VCE = -2V, IC = -0.5A 120 MHz Cob VCB = -10V, IE = 0, f = 1 MHz 40 pF R 3.9 5.6 7.3 k Transition frequency Collector output capacitance Resistor 2000-09-14 V 2/2