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Part : MVR22HXBRN303 Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : $0.0839 Price Each : $0.1039
Part : MVR32HXBRN303 Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : $0.0679 Price Each : $0.0829
Part : MVR32KXBRN303 Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : $0.0679 Price Each : $0.0829
Part : MVR34HXBRN303 Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : $0.0739 Price Each : $0.0909
Part : NRN30-30GM50-E2-C-V1 Supplier : PEPPERL+FUCHS Manufacturer : Allied Electronics & Automation Stock : - Best Price : $169.8500 Price Each : $169.8500
Part : NRN30-30GM50-E2-V1 Supplier : PEPPERL+FUCHS Manufacturer : Allied Electronics & Automation Stock : - Best Price : $153.5400 Price Each : $161.62
Part : NRN30-30GM50-E3-V1 Supplier : PEPPERL+FUCHS Manufacturer : Allied Electronics & Automation Stock : - Best Price : $153.5400 Price Each : $161.62
Part : NRN30-30GS50-E2-V1 Supplier : PEPPERL+FUCHS Manufacturer : Allied Electronics & Automation Stock : - Best Price : $157.11 Price Each : $157.11
Part : NRN30-30GS50-E3-V1 Supplier : PEPPERL+FUCHS Manufacturer : Allied Electronics & Automation Stock : - Best Price : $157.11 Price Each : $157.11
Part : FCRN303-1 Supplier : California Micro Devices Manufacturer : Bristol Electronics Stock : 35,100 Best Price : - Price Each : -
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RN303 Datasheet

Part Manufacturer Description PDF Type
RN3030 N/A Discontinued Transistor Data Book 1975 Scan
RN3030R N/A Discontinued Transistor Data Book 1975 Scan
RN3034B80W Philips Semiconductors NPN silicon planar epitaxial microwave power transistor Scan

RN303

Catalog Datasheet MFG & Type PDF Document Tags

R315 crystal

Abstract: sn74f14 RN22 RN28 RN303 RN304 RN305 RN307 RN308 RN310 mnr14-e0a-j-220 8 Page 7 10/7/97 22
Motorola
Original
RN311 SN74F14D R315 crystal sn74f14 smd transistor h5c transistor c143 transistor c413 2062-0000-00 256CK272X2PD SIP10PR 2N7002LT1 AM29F040-120JC AM29F040 RN200

EVB555

Abstract: MPC555 connected to pin 17 of RN303, a spare pullup resistor, to prevent the floating input of IC403. NOTE: these
Motorola
Original
MPC555 EVB555 AN2001/D MPC555EVB/ETAS ES200 MAPI-400

SPS 13002

Abstract: ic403 IC403 (/SGEOF) should be connected to pin 17 of RN303, a spare pullup resistor, to prevent the floating
Motorola
Original
SPS 13002 connector TFM-110 samtec tfm connector TFM connector TFM-130 ETAS CO106 CO107 TFM-130-12S-D-P SFM-130-02-S-D-P

SFM-130

Abstract: Robinson Nugent connected to pin 17 of RN303, a spare pullup resistor, to prevent the floating input of IC403. NOTE: these
Motorola
Original
SFM-130 Robinson Nugent CO601 tfm-110-12-s-d-p TP117 tfm-110 AN2001

IC403

Abstract: sfm-110 resistor. In addition, pin 6 of IC403 (/SGEOF) should be connected to pin 17 of RN303, a spare pullup
Motorola
Original
sfm-110 TP113 CO509 TP-106 Robinson Nugent 2.0 mm SFM-130-02-S-D

MAX232 G4

Abstract: IC404 18 RN303 22K0 1 18 RN302 22K0 1 VCC3_3 VCC3_3 VCC3_3 VCC3_3 R300 4K75
Digital DNA
Original
MAX232 G4 IC404 IC808 ic401 diode C728 diode c729 TP102 TP103 CB100 TP100 TP101 CO101

QSH-030-01-F-D-A

Abstract: Infineon Tricore TC1762 BOOT RN912 RN103 RN113 RN123 RN133 RN153 RN163 RN183 RN203 RN223 RN243 RN273 RN303 RN333 RN363
Infineon Technologies
Original
QSH-030-01-F-D-A Infineon Tricore TC1762 BOOT C701 T C709 diode tc1766 Crystal oscillator r315 TC176X D-81541 RS232 TC1762 TC1764 TC1766

P36-103-11R9

Abstract: CB605 be placed within 2 inch of the CPU. su sC RN302A RN302B RN302C RN302D RN303A RN303B RN303C , cavity on L6 1 1 1 C314 C315 C316 1 7 0Ohm 8 RN303D id 2 2 2 22UF/6.3V
Infineon Technologies
Original
P36-103-11R9 CB605 r741 on semiconductor r639 on semiconductor r643 smd diode OE R612 TC1130 PC100

dc motor uln2003

Abstract: PTC501 450 3.Opt 4.Opt 3.Opt 125J 125J 125J 0* 0* El* R38s R38s R38s 49 50 51 RN3020 RN3020R RN3030 200m , # RN3030R SFF103 SFF121 200m 200m 200m 3.OA 5.0A 5.OA 5.0* 15 25 20 25 25 50 20 5.On 100p 5.0 5.00 5.00
RS Components
Original
dc motor uln2003 PTC501 LPC2368 gpio ports DIN14162 usb controller using LPC1343 dc motor interface with 8051 using uln2003 COQ302 PAQ30203 PAF30102 COR301 COR302 PAQ30103

RY130

Abstract: ry185 Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor RN3034B80W FEATURES QUICK REFERENCE DATA â'¢ Suitable for short and medium pulse application up to 100 |j.s pulse width, 10% duty factor. Microwave performance up to Tmb = 25 °C in a , _ RN3034B80W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , Objective specification NPN Silicon planar epitaxial RN3034B80W m icrowave power transistor
Anglia Catalog
Original
RY130 ry185 Piher* pot 47K Ry110 RY182 Piher* pot 470K 1000M MIL-STD-202 1500V 3590S-2-201L 3590S-2-501L 3590S-2-102L

LC2608

Abstract: C1308 DIODE 450 3.Opt 4.Opt 3.Opt 125J 125J 125J 0* 0* El* R38s R38s R38s 49 50 51 RN3020 RN3020R RN3030 200m , # RN3030R SFF103 SFF121 200m 200m 200m 3.OA 5.0A 5.OA 5.0* 15 25 20 25 25 50 20 5.On 100p 5.0 5.00 5.00
-
Original
LC2608 C1308 DIODE asus B649 cpu Yonah-2M sc1834 MAX6657MSA ICS954310 DDR2-667 667MH 945GM 02G010009121

transistor k1502

Abstract: dr 25 germanium diode Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor RN3034B80W FEATURES â'¢ Suitable for short and medium pulse application up to 100 |j.s pulse width, 10% duty factor. â'¢ Diffused emitter ballasting resistors improve ruggedness â , NPN silicon planar epitaxial _ K . RN3034B80W microwave power transistor LIMITING VALUES In , K 4 â  , RN3034B80W microwave power transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER
-
OCR Scan
transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 NPN110 B0-60V BVCEO-40V FE-3000 BVCE0-40V MHM1201
Abstract: GND B B RN302A RN302B RN302C RN302D RN303A RN303B RN303C GND R301 VCCSENSE 2 , C316 1 C317 7 0Ohm 8 RN303D 22UF/6.3V 2 22UF/6.3V 2 22UF/6.3V N/A 22UF/6.3V N/A -
OCR Scan

SA2713

Abstract: MA7809 Decoupling Capacitor Place near CPU 1 + 1 1 1 1 1 CE302 100UF/2.5V RN302A RN302B RN302C RN302D RN303A RN303B RN303C RN303D 2 100Ohm 2 1 C323 C324 C325 C326 C327 C328 c0402 c0402 c0402 c0402 c0402
-
OCR Scan
SA2713 MA7809 RN1030A MEM808 UC320 2n4089 SA2711 SA2712 SA2714 SA2715 SA2716

RN3034B80W

Abstract: RN3030R Transistors P-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)15 V(BR)GSS (V) I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) V(GS)th (V) (Min) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V) (Test Condition
-
OCR Scan

asus

Abstract: IT8510 GND GND GND B B RN302A RN302B RN302C RN302D RN303A RN303B RN303C GND R301 VCCSENSE , C316 1 C317 7 0Ohm 8 RN303D 22UF/6.3V 2 22UF/6.3V 2 22UF/6.3V N/A 22UF/6.3V N/A
-
Original
ISL6262CRZ IT8510 isl6227caz it85 D1309 IT8510TE IT8511E RTL8100CL 02G010008811 R5C832 AD1986A R5C841

l9122

Abstract: asus 18 RN303 22K0 1 18 RN302 22K0 1 VCC3_3 VCC3_3 VCC3_3 VCC3_3 R300 4K75
-
Original
RC415M l9122 RC415ME 12G140001089 ATI SB600 CON3603 ICS951463 533MH DDR2-533 IT8510/8511 SB600
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