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RN242-1-02 Schaffner General Purpose Inductor, 33000uH, 50%, 2 Element, ROHS COMPLIANT PACKAGE visit Digikey Buy
RN242-1.4-02 Schaffner General Purpose Inductor, 27000uH, 50%, 2 Element, ROHS COMPLIANT PACKAGE visit Digikey Buy
RN242-1-02-33M Schaffner Single Phase EMI Filter, 300V, 50/60HzHz, visit Digikey Buy
RN242-1.4-02-27M Schaffner Single Phase EMI Filter, 300V, 50/60HzHz, visit Digikey Buy
RN2421(TE85L,F) Toshiba America Electronic Components PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,800MA I(C),SC-59 visit Digikey Buy

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Part : RN242-1-02 Supplier : Schaffner Manufacturer : Allied Electronics & Automation Stock : - Best Price : $3.13 Price Each : $3.13
Part : RN242-1-02-33M Supplier : Schaffner Manufacturer : Allied Electronics & Automation Stock : - Best Price : $2.48 Price Each : $2.48
Part : RN242-1.4-02 Supplier : Schaffner Manufacturer : Allied Electronics & Automation Stock : - Best Price : $3.13 Price Each : $3.13
Part : RN242-1.4-02-27M Supplier : Schaffner Manufacturer : Allied Electronics & Automation Stock : - Best Price : $2.48 Price Each : $2.48
Part : RN242-1-02-33M Supplier : Schaffner Manufacturer : RS Components Stock : 300 Best Price : £1.03 Price Each : £1.03
Part : RN242-1.4-02-27M Supplier : Schaffner Manufacturer : RS Components Stock : 300 Best Price : £1.3380 Price Each : £1.3380
Part : RN242-1-02-33M Supplier : Schaffner Manufacturer : Chip1Stop Stock : 12 Best Price : $2.6210 Price Each : $2.6210
Part : RN242-1.4-02-27M Supplier : Schaffner Manufacturer : Chip1Stop Stock : 14 Best Price : $2.60 Price Each : $2.60
Part : RN2421(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 4,900 Best Price : $0.9160 Price Each : $0.9160
Part : RN242-1-02-33M Supplier : Schaffner Manufacturer : Sager Stock : - Best Price : $1.21 Price Each : $1.34
Part : RN242-1.4-02-27M Supplier : Schaffner Manufacturer : Sager Stock : - Best Price : $1.21 Price Each : $1.34
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RN2421 Datasheet

Part Manufacturer Description PDF Type
RN2421 Toshiba PNP transistor Original
RN2421 Toshiba PNP EPITAXIAL TYPE (SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS) Original
RN2421 Toshiba Pre-Biased Digital Transistor Original
RN2421 N/A The Transistor Manual (Japanese) 1993 Scan
RN 242-1-02 N/A CHOKE 33MH 1A Original
RN242-1-02 Schaffner Common Mode Chokes, Filters, CHOKE COMPENSATED 33MH 1A VERT Original
RN 242-1.4-02 N/A CHOKE 27MH 1.4A Original
RN242-1.4-02 Schaffner Common Mode Chokes, Filters, CHOKE COMPENSATED 27MH 1.4A VERT Original
RN242-1.4/02 Schaffner Inductor, Current Compensated Chokes Original
RN242-1.4/02 Schaffner CHOKE, COM/ASYM MODE 2X27MH 1.4ACHOKE, COM/ASYM MODE 2X27MH 1.4A; Inductance:27mH; Inductor type:Common/Asymmetrical; Current, DC max:1.4A; Resistance:0.5R; Tolerance, +:50%; Tolerance, -:30%; Case style:RN242; Voltage rating, Original

RN2421

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421,RN2422 , "¦) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 RN2424 10 10 RN2425 0.47 , Symbol Collector-Emitter voltage Unit VCBO â'50 V VCEO RN2421~2427 Rating â'50 V â'10 RN2421~2424 Emitter-Base voltage RN2425, 2426 â'5 VEBO â'6 RN2427 , V RN2421~2427 â'800 mA Pc 200 mW Tj 150 °C Tstg â'55~150 °C Toshiba
Original
RN2426 RN1421 RN1427 SC-59

RN2425

Abstract: RN1421 RN2421RN2427 PNP (PCT) () RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427 , 1 2007-11-01 RN2421RN2427 RN2421 RA RN2422 RB RN2423 RC RN2424 RD RN2425 RE RN2426 RF RN2427 RG (Ta = 25°C) RN2421 2427 , 1.3 RN2427 1.54 2.2 2.86 RN24212424 0.9 1.0 1.1 RN24212427 VEB = 10V , ­59 2­3F1A : 0.012 g () R1 (k) R2 (k) RN2421 1 1 RN2422 2.2 2.2 RN2423
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Original
RN2421-RN2427 RN1421RN1427 236MOD RN24222427

RN1421

Abstract: RN1427 RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421,RN2422,RN2423 , RN1421~RN1427 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2421 1 , Collector-Emitter voltage Symbol RN2421~2427 Rating Unit VCBO -50 V VCEO -50 V RN2421 , power dissipation Junction temperature Storage temperature range V -6 Ic RN2421~2427 -800 mA Pc 200 mW Tj 150 °C Tstg -55~150 °C 1 2001-11-29 RN2421
Toshiba
Original
2427
Abstract: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421,RN2422,RN2423 , Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN2421 RN2422 RN2423 RN2424 RN2425 , voltage Collector-Emitter voltage RN2421~2427 RN2421~2424 Emitter-Base voltage RN2425, 2426 RN2427 Collector current Collector power dissipation Junction temperature Storage temperature range RN2421~2427 Ic , reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 RN2421 Toshiba
Original
Abstract: 1A MAX IMU M RA TI N G S (Ta=25°C) CHARACTERISTIC SYMBOL RN2421-2427 RN2421-2424 v CBO v CE O RATING -50 -5 0 -10 v EBO ic RN2421-2427 PC Tj T stg -5 -6 -800 200 15 0 -55-150 mA mW ° C ° C V UNIT V V , -2.5 -3.0 -1.3 -0.8 -1.0 MHz pF V V mA UNIT nA RN2421-2427 RN2421 RN2422 V Ce - 5 ° V , I b - 0 , =-10V, f=lMHz I E =0 -0.4 -0.5 - Transition Frequency Collector Output Capacitance RN2421-2427 RN2421-2427 , 0.22 MAX. 1.3 2.86 6.11 13 0.61 1.3 2.86 1.1 0.0517 0.11 0.24 kfi UNIT RN2421-2424 RN2425 Resistor -
OCR Scan
RN242

RN1421

Abstract: RN1427 RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421,RN2422,RN2423 , (k) R2 (k) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 RN2424 10 , Collector-Base voltage Collector-Emitter voltage Symbol RN2421~2427 Rating Unit VCBO -50 V VCEO -50 V RN2421~2424 Emitter-Base voltage RN2425, 2426 -10 VEBO -5 RN2427 , Ic RN2421~2427 -800 mA Pc 200 mW Tj 150 °C Tstg -55~150 °C 1
Toshiba
Original

RN1221

Abstract: RN2421 RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421,RN2422,RN2423 , RN1221~1227 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2421 1 , Symbol RN2421~2426 Rating Unit VCBO -50 V VCEO -50 V RN2421~2424 , Junction temperature Storage temperature range -5 V -6 Ic RN2421~2426 -800 mA Pc , 1/6 RN2421~RN2427 Electrical Characteristics (Ta = 25°C) ° Symbol Characteristic
Toshiba
Original
RN2425 equivalent 961001EAA1
Abstract: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421,RN2422,RN2423 , Equivalent Circuit and Bias Resistor Values Type No. RN2421 RN2422 RN2423 RN2424 RN2425 RN2426 RN2427 R1 (k , Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage RN2421~2427 RN2421~2424 Emitter-Base voltage RN2425, 2426 RN2427 Collector current Collector power dissipation Junction temperature Storage temperature range RN2421~2427 Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating -50 Toshiba
Original

2427

Abstract: RN1221 RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421,RN2422,RN2423 , Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2421 1 1 RN2422 , 25°C) ° Characteristic Collector-base voltage Collector-emitter voltage Symbol RN2421~2426 Rating Unit VCBO -50 V VCEO -50 V RN2421~2424 Emitter-base voltage RN2425 , Storage temperature range V -6 Ic RN2421~2426 -800 mA Pc 200 mW Tj 150
Toshiba
Original
Abstract: RN2421-RN2427 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector Cut-off Current RN2421-2427 , TOSHIBA TOSHIBA TRANSISTOR RN2421-RN2427 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN2421 , Power Dissipation Junction Temperature Storage Temperature Range R N2421-2427 RN2421-2424 RN2425, 2426 , RN2425 RN2426 RN2427 RN2421-2424 VCE - - 5 V Input Voltage (OFF) RN2425, 2426 Vi (OFF) I q = -0.1mA RN2427 Transition Frequency RN2421-2427 fT VC E -5V, I q = -20mA Collector Output V C B -10V, IE -
OCR Scan

2427

Abstract: d 2427 (Ta=25°C) SYMBOL RN2421-2427 RN2421-2424 VCB0 VCE0 RATING -50 -50 -10 vEB0 ic PC RN2421-2427 Ti Tstg , ELECTRICAL CHARACTERISTICS CHARACTERISTIC Collector Cut-off Current RN2421-2427 RN2421 RN2422 RN2423 Emitter , Output Capacitance RN2425.2426 RN2427 RN2421-2427 RN2421-2427 fT Cob VCE=-5V, Ic=-20mA VCB=-10V, IE , RN2421-2424 RN2425 Resistor Rntio R1/R2 RN24 26 RN2427 0.09 0.2 0.1 0.22 0.11 0.24 R1 (Ta=25°C) SYMBOL , RN2421,2422,2423 RN2424,2425 RN2426,2427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER
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OCR Scan
d 2427 RN1421-1427 RN2422-2427
Abstract: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 Switching, Inverter Circuit, Interface , . R1 (kâ"¦) R2 (kâ"¦) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 RN2424 , °C) Characteristics Collector-Base voltage Collector-Emitter voltage Symbol RN2421 to 2427 Rating Unit VCBO â'50 V VCEO â'50 V RN2421 to 2424 Emitter-Base voltage RN2425, 2426 â Toshiba
Original
Abstract: RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421,RN2422,RN2423 , Type No. R1 (kâ"¦) R2 (kâ"¦) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 , ° Characteristics Collector-Base voltage Collector-Emitter voltage Symbol RN2421~2427 Rating Unit VCBO â'50 V VCEO â'50 V RN2421~2424 Emitter-Base voltage RN2425, 2426 â , temperature range V â'6 Ic RN2421~2427 â'800 mA Pc 200 mW Tj 150 °C Toshiba
Original

RN2421-2427

Abstract: 2427 RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2421,RN2422,RN2423 , RN1421~RN1427 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2421 1 , Collector-Emitter voltage Symbol RN2421~2427 Rating Unit VCBO -50 V VCEO -50 V RN2421 , Collector power dissipation Junction temperature Storage temperature range V Ic RN2421~2427 -800 , test report and estimated failure rate, etc). 1 2007-11-01 RN2421~RN2427 Electrical
Toshiba
Original
Abstract: RN2421-2427 VCBO VCEO Emitter-Base Voltage RN2421-2424 RN2425, 2426 RN2427 VE BO RN2421-2427 , CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector Cut-off Current RN2421-2427 SYMBOL : CBO : CEO , q = â'"100mA RN2425 RN2426 RN2427 RN2421-2424 V C E -5 V Input Voltage (OFF) RN2425, 2426 Vi (OFF) I q = â'"0.1mA RN2427 Transition Frequency RN2421-2427 fT VC E = _ 5 V , I q = â'"20mA Collector Output v CB = - i o v , IE = 0 RN2421-2427 ^ob f = 1MHz Capacitance RN2421 RN2422 RN2423 -
OCR Scan

high frequency diode

Abstract: 15536-1 Super M ini G eneral ~800m A Su p er M ini G eneral Built-in Resistor RN1421 -2 7 RN2421 -2 7 ~20V 50V C , Series RN2701 Series RN2601 Series RN2901 Series RN2421 Series RN6006 RN6001 Series RN4601
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OCR Scan
2SC4116 high frequency diode 15536-1 1SS1 A1873 flowchart 2SC2873 2SA1213 2SC3074 2SC3072 2SA1242 2SC2859

RN1417

Abstract: rn4601 RN2413 RN2414 RN2415 RN2416 RN2417 RN2418 RN2421 RN2422 RN2423 RN2424 RN2425 RN2426 RN2427 RN2501 RN2502
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OCR Scan
RN1417 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006

en2222

Abstract: RN2224 RN2421 ïK2 SW/INV/D -50 -50 -0.8 0. 2 -0.1 -50 60 -1 -0. 1 -0.25 -0.05 -0.001 RN2422 , (SC-59(2-3F1*) EBC, R RN2421 200* -5 -0.02 13* R1/R2 2. 2K/2. 2K RN1422 (SC-59(2-3F1*) EBC, R
-
OCR Scan
RN2221 RN2224 RN2225 RN2226 RN2227 RN2301 en2222 8N23 EN2222 8N2223
Abstract: TOSHIBA TOSHIBA TRANSISTOR RN1421-RN1427 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS High Current Type (Iq (MAX.) = 800mA) With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts Manufacturing Process Low V c e (sat) Complementary to RN2421~2427 Unit in mm + 0.5 EQUIVALENT CIRCUIT BIAS RESISTOR VALUES TYPE No. RN1421 RN1422 RN1423 RN1424 RN1425 -
OCR Scan
RN1421-1424 N1421-1427

diode 2sa1015

Abstract: rn4601 RN2226 RN 1227 RN2227 RN1421 RN2421 RN 1422 RN2422 RN1423 RN2423 RN1424 RN2424 RN1425 RN2425 RN1426
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OCR Scan
diode 2sa1015 2sa1015 sot-23 2SC1815 2SA1015 VRN2501/ RN1502 RN1503
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