RN2107FVRN2109FV RN2107FV RN2108FV RN2109FV RN1107FV RN1109FV 2109FV 030619EAA

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107FV, RN2108FV, RN2109FV Switching, Inverter Circuit, Interface

RN2107FVRN2109FV RN2107FVRN2109FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107FV RN2107FV, RN2108FV RN2108FV, RN2109FV RN2109FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit in mm 0.4 Complementary to RN1107FV RN1107FV~RN1109FV RN1109FV 0.8±0.05 1 0.4 1.2±0.05 Reduced quantity of parts and manufacturing process 0.8±0.05 Simplified circuit design 1.2±0.05 2 3 0.5±0.05 0.13±0.05 Equivalent Circuit and Bias Resister Values Type No. R1 (k) R2 (k) RN2107FV RN2107FV 10 47 RN2108FV RN2108FV 22 47 RN2109FV RN2109FV 47 22 VESM JEITA TOSHIBA Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Rating RN2108FV RN2108FV VCBO -50 -50 V -6 VEBO -7 V -15 IC Collector power dissipation Junction temperature Storage temperature range RN2107FV RN2107FV ~RN2109FV RN2109FV 2-1L1A V VCEO RN2109FV RN2109FV Collector current Unit RN2107FV RN2107FV Emitter-base voltage 2.EMITTER Weight: 0.0015g (typ.) Symbol RN2107FV RN2107FV ~RN2109FV RN2109FV 1.BASE 3.COLLECTOR JEDEC Collector-base voltage 0.32±0.05 Built-in bias resistors -100 mA PC(Note) 150 mW Tj 150 °C Tstg -55~150 °C Note: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt) 0.5mm 0.45mm 0.45mm 0.4mm 1 2004-06-28 RN2107FVRN2109FV RN2107FVRN2109FV Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN2107FV RN2107FV~2109FV 2109FV Symbol Test Circuit RN2108FV RN2108FV -100 nA VCE = -50V, IB = 0 -500 nA -0.081 -0.15 VEB = -7V, IC = 0 -0.078 -0.145 -0.167 -0.311 80 -0.1 -0.3 -1.8 -1.0 -2.6 -2.2 -5.8 -0.5 RN2109FV RN2109FV VCB = -50V, IE = 0 -0.7 Unit 70 IEBO Max 80 RN2107FV RN2107FV Emitter cut-off current Typ. VEB = -15V, IC = 0 ICEO Min VEB = -6V, IC = 0 ICBO Test Condition -1.0 -0.6 -1.16 RN2107FV RN2107FV DC current gain RN2108FV RN2108FV hFE VCE = -5V, IC = -10mA RN2109FV RN2109FV Collector-emitter saturation voltage RN2107FV RN2107FV~2109FV 2109FV VCE (sat) IC = -5mA, IB = -0.25mA VCE = -0.2V, IC = -5mA RN2107FV RN2107FV Input voltage (ON) RN2108FV RN2108FV VI (ON) RN2109FV RN2109FV RN2107FV RN2107FV mA V V -1.5 -2.6 200 MHz 3 pF 7 10 13 15.4 22 28.6 RN2109FV RN2109FV 32.9 47 61.1 RN2107FV RN2107FV Input voltage (OFF) VCE = -5V, IC = -0.1mA 0.191 0.213 0.232 0.421 0.468 0.515 1.92 2.14 2.35 RN2108FV RN2108FV VI (OFF) RN2109FV RN2109FV Transition frequency RN2107FV RN2107FV~2109FV 2109FV fT VCE = -10V, IC = -5mA Collector output capacitance RN2107FV RN2107FV~2109FV 2109FV Cob VCB = -10V, IE = 0, f = 1MHz RN2107FV RN2107FV Input resistor Resistor ratio RN2108FV RN2108FV RN2108FV RN2108FV R1 R1/R2 RN2109FV RN2109FV 2 V k 2004-06-28 RN2107FVRN2109FV RN2107FVRN2109FV RN2107FV RN2107FV RN2107FV RN2107FV RN2108FV RN2108FV RN2108FV RN2108FV RN2109FV RN2109FV RN2109FV RN2109FV 3 2004-06-28 RN2107FVRN2109FV RN2107FVRN2109FV RN2107FV RN2107FV RN2107FV RN2107FV RN2108FV RN2108FV RN2108FV RN2108FV RN2109FV RN2109FV RN2109FV RN2109FV 4 2004-06-28 RN2107FVRN2109FV RN2107FVRN2109FV Type Name Marking RN2107FV RN2107FV RN2108FV RN2108FV RN2109FV RN2109FV 5 2004-06-28 RN2107FVRN2109FV RN2107FVRN2109FV RESTRICTIONS ON PRODUCT USE · 030619EAA 030619EAA The information contained herein is subject to change without notice. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. · TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-06-28