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RN2101FRN2106F RN2101F RN2102F RN2103F RN2104F RN2105F RN2106F RN1101F RN1106F - Datasheet Archive
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101F,RN2102F,RN2103F RN2104F,RN2105F,RN2106F Switching, Inverter
RN2101FRN2106F RN2101FRN2106F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2101F RN2101F,RN2102F RN2102F,RN2103F RN2103F RN2104F RN2104F,RN2105F RN2105F,RN2106F RN2106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1101F RN1101F~RN1106F RN1106F Equivalent Circuit and Bias Resister Values Type No. R1 (k) R2 (k) RN2101F RN2101F 4.7 4.7 RN2102F RN2102F 10 10 RN2103F RN2103F 22 22 RN2104F RN2104F 47 47 RN2105F RN2105F 2.2 47 RN2106F RN2106F 4.7 47 JEDEC EIAJ TOSHIBA Maximum Ratings (Ta = 25°C) ° Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol RN2101F RN2101F~2106F 2106F RN2101F RN2101F~2104F 2104F RN2105F RN2105F, 2106F 2106F Rating -50 V VCEO -50 2-2HA1A Unit VCBO V VEBO -10 -5 V Collector current IC -100 mA Collector power dissipation PC 100 mW Tj 150 °C Tstg -55~150 °C Junction temperature Storage temperature range RN2101F RN2101F~2106F 2106F 961001EAA2 961001EAA2 · TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 2000-09-14 1/7 RN2101FRN2106F RN2101FRN2106F Electrical Characteristics (Ta = 25°C) ° Characteristic Test Circuit Min Typ. Max VCB = -50V, IE = 0 -100 VCE = -50V, IB = 0 -500 -0.82 -1.52 -0.38 -0.71 -0.17 -0.33 -0.082 -0.15 -0.078 -0.145 -0.074 -0.138 RN2101F RN2101F 30 RN2102F RN2102F 50 70 80 RN2105F RN2105F 80 RN2106F RN2106F 80 -0.1 -0.3 RN2101F RN2101F -1.1 -2.0 RN2102F RN2102F -1.2 -2.4 -1.3 -3.0 -1.5 -5.0 RN2105F RN2105F -0.6 -1.1 RN2106F RN2106F Collector cut-off current Symbol -0.7 -1.3 -1.0 -1.5 -0.5 -0.8 RN2101F RN2101F ~2106F 2106F ICBO ICEO Test Condition RN2101F RN2101F RN2102F RN2102F Emitter cut-off current RN2103F RN2103F RN2104F RN2104F VEB = -10V, IC = 0 IEBO RN2105F RN2105F VEB = -5V, IC = 0 RN2106F RN2106F DC current gain Collector-emitter saturation voltage Input voltage (ON) RN2103F RN2103F RN2104F RN2104F RN2101F RN2101F ~2106F 2106F RN2103F RN2103F RN2104F RN2104F Input voltage (OFF) RN2101F RN2101F ~2104F 2104F RN2105F RN2105F, 2106F 2106F hFE VCE (sat) VI (ON) VI (OFF) VCE = -5V, IC = -10mA IC = -5mA, IB = -0.25mA VCE = -0.2V, IC = -5mA VCE = -5V, IC = -0.1mA Unit nA mA V V V Transition frequency RN2101F RN2101F ~2106F 2106F fT VCE = -10V, IC = -5mA 200 MHz Collector Output capacitance RN2101F RN2101F ~2106F 2106F Cob VCB = -10V, IE = 0, f = 1MHz 3 6 pF RN2101F RN2101F 3.29 4.7 6.11 RN2102F RN2102F 7 10 13 15.4 22 28.6 RN2104F RN2104F 32.9 47 61.1 RN2105F RN2105F 1.54 2.2 2.86 RN2106F RN2106F 3.29 4.7 6.11 RN2101F RN2101F ~2104F 2104F 0.9 1.0 1.1 0.0421 0.0468 0.0515 0.09 0.1 0.11 Input resistor Resistor ratio RN2103F RN2103F RN2105F RN2105F RN2106F RN2106F R1 R1/R2 2000-09-14 k 2/7 RN2101FRN2106F RN2101FRN2106F 2000-09-14 3/7 RN2101FRN2106F RN2101FRN2106F 2000-09-14 4/7 RN2101FRN2106F RN2101FRN2106F 2000-09-14 5/7 RN2101FRN2106F RN2101FRN2106F 2000-09-14 6/7 RN2101FRN2106F RN2101FRN2106F Type Name Marking RN2101F RN2101F RN2102F RN2102F RN2103F RN2103F RN2104F RN2104F RN2105F RN2105F RN2106F RN2106F 2000-09-14 7/7