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RN1308 Datasheet

Part Manufacturer Description PDF Type
RN1308 Toshiba Silicon NPN Transistor with integrated resistor Original
RN1308 Toshiba NPN Transistor Original
RN1308 N/A The Transistor Manual (Japanese) 1993 Scan
RN1308 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
RN1308(TE85L,F) Toshiba Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS NPN 50V 100MA USM Original

RN1308

Catalog Datasheet MFG & Type PDF Document Tags

RN1307

Abstract: RN1308 RN1307RN1309 NPN (PCT) () RN1307,RN1308,RN1309 : mm , , RN2307RN2309 JEDEC JEITA R1 (k) RN1307 10 47 RN1308 22 47 2­2E1A 47 , °C) VCBO 50 V VCEO 50 V RN1307 RN1308 6 VEBO RN1309 7 V , 2.14 2.35 RN13071309 RN1307 RN1308 IEBO RN1309 RN1307 RN1308 hFE , RN1308 RN1308 VI (ON) VI (OFF) VCE = 0.2V, IC = 5mA VCE = 5V, IC = 0.1mA RN1309
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Original
RN2307 RN2309
Abstract: RN1307~RN1309 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307,RN1308,RN1309 , RN1307 Emitter-base voltage RN1308 6 VEBO 7 RN1309 V 15 Collector current Ic , Characteristic Emitter cut-off current RN1308 RN1309 RN1307 DC current gain RN1308 RN1308 VCE , 1.92 2.14 2.35 RN1307 RN1308 R1 RN1309 RN1308 RN1309 RN1307 , ) RN1309 Translation frequency RN1307 RN1308 RN1309 Input voltage (OFF) VCB = Toshiba
Original
RN2207 RN2208 RN2209 SC-70
Abstract: RN1307 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307, RN1308, RN1309 Unit , "¦) RN1307 10 47 RN1308 22 47 RN1309 47 USM R2 (kâ"¦) 22 JEDEC â'• JEITA , voltage VCEO 50 V RN1307 Emitter-base voltage RN1308 6 VEBO 7 V 15 RN1309 , cut-off current DC current gain RN1308 RN1308 IEBO hFE RN1309 Collector-emitter saturation voltage RN1308 VCE = 5V, IC = 10mA â'• VCE (sat) RN1307 Input voltage (ON) â Toshiba
Original
Abstract: RN1307 ~ RN1309 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307, RN1308 , Type No. R1 (kâ"¦) R2 (kâ"¦) RN1307 10 47 RN1308 22 47 RN1309 47 22 , Collector-emitter voltage VCEO 50 V 6 RN1307 Emitter-base voltage RN1308 VEBO 7 RN1309 , cut-off current RN1307 Emitter cut-off current DC current gain RN1308 RN1308 IEBO hFE VCE (sat) RN1308 â'• IC = 5mA, IB = 0.25mA â'• RN1307 Input voltage (ON) VCE = 5V Toshiba
Original

0723 marking

Abstract: , RN1308, RN1309 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS · · · · , Power Dissipation Junction Temperature Storage Temperature Range RN1307 RN1308 RN1309 SYMBOL v CBO , e b = 6V, IC = 0 Emitter Cut-off RN1308 ÏEBO VEB = 7V, I c = 0 Current RN1309 VEB -15V, IC = 0 RN1307 V c e = 5V, lQ = 10mA DC Current Gain RN1308 hpE RN1309 Colleetor-Emitter Saturation VCE (sat) I q = 5mA, Ig = 0.25mA Voltage RN1307 Input Voltage (ON) RN1308 Vi (ON) V c e = 0.2V, I q = 5mA RN1309
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OCR Scan
0723 marking RN1307-RN1309 961001EAA1

RN1307

Abstract: RN1308 RN1307~RN1309 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307,RN1308 , voltage RN1308 6 VEBO 7 V 15 RN1309 Collector current Ic 100 mA Collector , RN1308 RN1309 RN1307 DC current gain RN1308 RN1308 VCE (sat) VI (ON) VCE = 50V , RN1307 RN1308 R1 RN1309 32.9 47 0.191 0.213 0.232 0.421 , capacitance Input resistor 100 VI (OFF) RN1309 Translation frequency RN1307 RN1308
Toshiba
Original

RN1307

Abstract: RN1308 RN1307~RN1309 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307,RN1308,RN1309 , Emitter-base voltage RN1308 6 VEBO RN1309 7 V 15 Collector current Ic 100 mA , cut-off current Test Circuit ICBO Characteristic Emitter cut-off current RN1308 RN1309 RN1307 DC current gain RN1308 RN1308 VCE (sat) VI (ON) VCE = 50V, IB = 0 500 , 61.1 0.191 0.213 0.232 0.421 0.468 0.515 1.92 2.14 2.35 RN1307 RN1308
Toshiba
Original
Abstract: RN1307~RN1309 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307,RN1308,RN1309 , RN1307 Emitter-base voltage RN1308 6 VEBO 7 RN1309 V 15 Collector current Ic , Circuit ICBO Characteristic Emitter cut-off current RN1308 RN1309 RN1307 DC current gain RN1308 RN1308 VCE (sat) VI (ON) VCE = 50V, IB = 0 â'• â'• 500 VEB = 6V, IC = 0 , 0.468 0.515 1.92 2.14 2.35 RN1307 RN1308 â'• R1 RN1309 RN1308 RN1309 â Toshiba
Original

1308 ic

Abstract: KA 2309 VALUES TYPE NO. RN1307 RN1308 RN1309 R1 (kn) 10 22 47 R2 (ka) 47 47 22 2. E M I T T E R 3. CO L LE C , =25°C) SYMBOL VCBO VCEO RN1307 RN1308 RN1309 vEBO RATING 50 50 6 7 15 ic PC Tj Tstg 100 100 150 -55-150 mA mW "C , V c e = 50V, Ib=0 v EB=6v> RN1307 Emitter Cut-off Current RN1308 RN1309 RN1307 DC Current Gain RN1308 RN1309 Collector-Emitter Saturation Voltage RN1307 Input Voltage (ON) RN1308 RN1309 RN1307 Input Voltage (OFF) RN1308 RN1309 Transition Frequency Collector Output Capacitance RN1307 Input Resistor RN1308
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1308 ic KA 2309 marking KN sc70 KN102-2 A 1309 HN1308 RN130
Abstract: RN1307 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307,RN1308,RN1309 , to RN2307~RN2309 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN1307 RN1308 , Collector-base voltage Collector-emitter voltage RN1307 Emitter-base voltage RN1308 RN1309 Collector current , Collector cut-off current RN1307 Emitter cut-off current RN1308 RN1309 RN1307 DC current gain RN1308 RN1309 Collector-emitter saturation voltage RN1307 Input voltage (ON) RN1308 RN1309 RN1307 Input voltage (OFF) RN1308 Toshiba
Original
Abstract: RN1307~RN1309 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307,RN1308 , RN1307 Emitter-base voltage RN1308 6 VEBO 7 V 15 RN1309 Collector current Ic , RN1307 Emitter cut-off current RN1308 0.15 VEB = 7V, IC = 0 0.078 0.145 VEB = 15V, IC = 0 IEBO 0.081 0.167 0.311 RN1307 RN1308 RN1308 VCE (sat) IC = 5mA, IB = , 2.2 VI (ON) RN1307 RN1308 0.1 0.7 RN1309 Input voltage (OFF) 80 70 RN1307 Toshiba
Original

RN1307

Abstract: RN1308 RN1307~RN1309 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307,RN1308,RN1309 , Emitter-base voltage RN1308 6 VEBO 7 RN1309 V 15 Collector current Ic 100 mA , Characteristic Emitter cut-off current RN1308 RN1309 RN1307 DC current gain RN1308 RN1308 VCE , 1.92 2.14 2.35 RN1307 RN1308 R1 RN1309 RN1308 RN1309 RN1307 , ) RN1309 Translation frequency RN1307 RN1308 RN1309 Input voltage (OFF) VCB =
Toshiba
Original
Abstract: ~2309 2 -E B - EQUIVALENT CIRCUIT 9 c BIAS RESISTOR VALUES TYPE NO. RN1307 RN1308 RN1309 R1 , Collector Power Dissipation Junction Temperature Storage Temperature Range RN1308 RN1309 SYMBOL VCBO V , RN1308 RN1309 RN1307 DC Current Gain RN1308 RN1309 Collector-Emitter Saturation Voltage RN1307 Input Voltage (ON) RN1308 RN1309 RN1307 Input Voltage (OFF) RN1308 RN1309 Transition Frequency Collector Output Capacitance RN1307 Input Resistor RN1308 RN1309 RN1307 Resistor Ratio RN1308 RN1309 MIN. 0.081 0.078 0.167 -
OCR Scan
Abstract: ) RN1307, RN1308, RN1309 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS , Range SYMBOL RN1307 RN1308 RN1309 v CBO VCEO Ve b o ic PC Tj Tstg RATING 50 50 6 7 , (Ta = 25°C) CHARACTERISTIC Collector Cut-off Current RN1307 Emitter Cut-off RN1308 Current RN1309 RN1307 DC Current Gain RN1308 RN1309 Collector-Emitter Saturation Voltage RN1307 Input Voltage (ON) RN1308 RN1309 RN1307 Input Voltage RN1308 (OFF) RN1309 Transition Frequency Collector -
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961001EA RN1307-RN

DF2S3.6SC

Abstract: TC7SZ34FU Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 RN2305 RN1308 RN2303 RN1302 RN2305 RN1304 RN2325A RN1111F Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 RN2305 RN1308 RN2303 RN1302 RN2305 RN1304 RN2325A RN1111
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Original
TC7SZ00AFS TC7SZ00FE TC7SZ00FU TC7SZ00F TC7WZ00FK TC7WZ00FU DF2S3.6SC TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 BCJ0052E SC-88A SC-74A

HN4C06J

Abstract: te85l F RN1306 RN1307 RN1308 RN1309 RN1310 RN1311 RN47A2JE R2 Q1 R1 Collector and base connection NPN + PNP R2 RN1301 RN1302 RN1303 RN1304 RN1305 RN1306 RN1307 RN1308 RN1309 RN1310 , RN1302 RN1303 RN1304 RN1305 RN1306 RN1307 RN1308 RN1309 RN1310 RN1311 Q2 RN1301 RN1302 RN1303 RN1304 RN1305 RN1306 RN1307 RN1308 RN1309 RN1310 RN1311 VCEO (V) 50 IC (mA , RN1301 RN1302 RN1303 RN1304 RN1305 RN1306 RN1307 RN1308 RN1309 RN1310 RN1311 RN1312 ­
Toshiba
Original
HN4C06J te85l F HN1B04FE SUFFIX TE85L Toshiba 2SC4117 1SS302

SN1311

Abstract: RN1305 0.00025 RN1308 SW/INV/D 50 50 0.1 0.1 0.1 50 80 5 0.01 0.3 0. 005 0.00025 RN1309 MS SW/INV/D 50 50 , 6 R1/R2 22K/47K RN2308 (SC-70(2-2E1A) BEC, R RN1308 250* 10 0. 005 6 R1/R2 47K/22K RN2309
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RN1401 RN1402 RN1403 RN1404 SN1311 RN13U RN1406

diode 2sa1015

Abstract: rn4601 RN1306 RN2306 RN 1307 RN2307 RN1308 RN2308 RN1309 RN2309 RN1310 RN2310 RN1311 RN2311 RN1312 RN2312 RN1313
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RN2226 diode 2sa1015 rn4601 2sa1015 sot-23 2SC1815 2SA1015 VRN2501/ RN1502 RN2502

RN1417

Abstract: rn4601 RN1227 RN1241 RN1242 RN1243 RN1244 RN1301 RN1302 RN1303 RN1304 RN1305 RN1306 RN1307 RN1308 RN1309 RN1310
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RN1417 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006

2N3904 331 transistor

Abstract: C549 transistor RN1304 RN1305 RN1306 Page 705 711 711 711 716 716 720 - - Type No. RN1307 RN1308 RN1309 RN1310
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02CZ2 02CZ5 02CZ6 02CZ27 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 2N5551 2SC1815 2SK246 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124

AWT1922S11

Abstract: GRM36cog270J50 the pass transistor. The control NPN is a Toshiba RN1308 with built in bias resistors. The pass , CONTROL I_4 R1 R2 RN1308 1 Control=0V - PA disconnected PACKAGE OUTLINE DRAWING D C
Anadigics
Original
AWT1922S11 GRM36cog270J50 gsm signal Booster FSF52 4604 mosfet LA 20-PB AWT1922 ERJ-36SYJ222V ERJ-36SYJ562V ERJ-36SYJ152V ECS-H1AY225R GRM36COG150J50
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