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Part : ARN1-2020-10.00.10.00 Supplier : IDEC Manufacturer : Sager Stock : - Best Price : $67.39 Price Each : $76.05
Part : CAF94120(IO2450-RN12) Supplier : LAIRD PLC Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : CRN-1/2-0-40MM Supplier : TE Connectivity Manufacturer : Sager Stock : - Best Price : - Price Each : -
Part : CRN-1/2-X-STK Supplier : TE Connectivity Manufacturer : Sager Stock : - Best Price : $1.00 Price Each : $1.18
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RN1226 Datasheet

Part Manufacturer Description PDF Type
RN1226 Toshiba Silicon NPN Epitaxial Type (PCT Process) Transistor Original
RN1226 Toshiba NPN Transistor Original
RN1226 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
RN1226 N/A The Transistor Manual (Japanese) 1993 Scan

RN1226

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 SW , . RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 RI (kfì) 1 2.2 4.7 10 0.47 1 2.2 R2 (kO) 1 2.2 4.7 , \T1 0 0 1 111 1 XMM J. RN1222 RN1223 Emitter Cut-off RN1224 lEBO Current RN1225 RN1226 RN1227 RN1221 RN1222 RN1223 DC Current Gain RN1224 hFE RN1225 RN1226 RN1227 RN1221 Collector-Emitter Saturation Voltage RN1222-1227 VCE (sat) RN1221 RN1222 RN1223 Input Voltage (ON) RN1224 VI (ON) RN1225 RN1226 RN1227 RN1221 -
OCR Scan
toshiba ta 1222 TRANSISTOR 1221 RN2221--2227 55MAX RN1221--1227 RN1221-1224 RN1221-1227
Abstract: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Unit: mm Switching, Inverter , 10 RN1226 1 10 RN1227 2.2 10 JEDEC EIAJ TOSHIBA Weight: 0.13g 2-4E1A , 150 °C Tstg -55~150 °C 1 2001-06-07 RN1221,RN1222,RN1223,RN1224,RN1225,RN1226 , 0.682 0.35 0.65 0.378 0.703 RN1225 RN1226 RN1227 RN1221 Toshiba
Original
1227 RN2221
Abstract: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Unit: mm Switching, Inverter , 10 RN1226 1 10 RN1227 2.2 10 JEDEC JEITA TOSHIBA 2-4E1A Weight: 0.13g , ,RN1225,RN1226,RN1227 Electrical Characteristics (Ta = 25°C) Symbol Characteristic Collector cut-off , 0.71 0.365 0.682 0.35 0.65 0.378 0.703 RN1225 RN1226 Toshiba
Original
Abstract: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Switching, Inverter Circuit , RN1224 RN1225 RN1226 RN1227 R1 (k) 1 2.2 4.7 10 0.47 1 2.2 R2 (k) 1 2.2 4.7 10 10 10 10 JEDEC EIAJ , ,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1221~1227 RN1221 RN1222 RN1223 Emitter cut-off current RN1224 RN1225 RN1226 Toshiba
Original
Abstract: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Unit: mm Switching, Inverter , 10 RN1226 1 10 RN1227 2.2 10 JEDEC EIAJ TOSHIBA Weight: 0.13g 2-4E1A , ,RN1225,RN1226,RN1227 Electrical Characteristics (Ta = 25°C) ° Symbol Characteristic Collector , 0.71 0.365 0.682 0.35 0.65 0.378 0.703 RN1225 RN1226 Toshiba
Original
Abstract: RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Switching, Inverter Circuit , 10 RN1226 1 10 RN1227 2.2 10 JEDEC EIAJ TOSHIBA Weight: 0.13g 2-4E1A , 1/7 RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 Electrical Characteristics (Ta = 25 , RN1222 Test Condition RN1224 IEBO VEB = 10V, IC = 0 RN1225 RN1226 RN1227 Toshiba
Original
rm-1225 961001EAA2 RM1225
Abstract: RN1221,1222,1223 RN1224,1225 RN1226,1227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER , RN1223 RN1224 RN1225 RN1226 RN1227 Rl(kil) 1 2.2 4.7 10 0.47 1 2.2 R2(kil) 1 2.2 J EDEC 1 . EMITTER 2 , 150 -55-150 V mA mW °C °C PC Tj Tstg 125 RN1221,1222,1223 RN1224,1225 RN1226,1227 , Emitter Cut-off Current RN1223 RN122A RN1225 RN1226 RN1227 RN1221 RN1222 RN1223 DC Current Gain RN1224 RN1225 RN1226 RN1227 Collector-Emitter Saturation Voltage RN1221 VCE(sat) RN1222-1227 RN1221 RN1222 -
OCR Scan
1223 equivalent RN2221-2227 RN122
Abstract: RN1221RN1227 NPN (PCT) () RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 , RN1224 10 10 RN1225 0.47 10 RN1226 1 10 RN1227 2.2 10 1 2007-11-01 , 90 RN1225 90 RN1226 90 RN1227 90 0.25 , RN1225 0.6 2.0 RN1226 0.7 2.5 RN1227 1.0 3.0 RN12211224 0.8 , RN1223 3.29 4.7 6.11 7 10 13 RN1225 0.329 0.47 0.61 RN1226 0.7 1.0 -
Original
RN2227 RN2221RN2227 RN12211227 RN12221227
Abstract: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 SW , RN1225 0.47 10 RN1226 1 10 RN1227 2.2 10 Weight : 0.13g M A X IM U M , RN1225 veb RN1226 RN1227 = 5 v , ie = o V e b = 6V, IC = 0 60 â'" 65 â'" â'" RN1223 70 â'" â'" 90 â'" â'" RN1225 90 â'" â'" RN1226 90 â'" â , 100mA RN1226 0.7 â'" RN1227 1.0 â'" 0.8 â'" 1.3 RN1225, 1226 VI (OFF) V c -
OCR Scan
Abstract: RN1225 MS SW/INV/D 50 50 0.8 0.3 0.1 50 90 1 0.1 RN1226 MS SW/INV/D 50 50 0.8 0.3 0.1 50 90 1 , * R1/R2 1K/10K 8N2226 (2-4E1A) ECB, R RN1226 300* 5 0.02 7* 81/82 2.2K/10K BN2227 (2-4E1A) ECB -
OCR Scan
RN1002 RN1003 RN1004 RN1006 RN1007 RN1008 KN1204 RN1Z BN1243 RN1011 RN1201
Abstract: [1 ] [ 1 ] Alphanum eric Product List Device RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN1007 RN1008 RN1009 RN1010 RN1011 RN1101 RN1102 RN1103 RN1104 R N H 05 RN1106 RN1107 RN1108 RN1109 RN1110 RN1111 RN1112 RN1113 RN1114 R N U 15 RN1116 RN1117 RN1118 RN1201 RN1202 RN1203 RN1204 RN1205 Page 75 75 75 75 75 75 80 80 80 84 84 87 87 87 87 87 87 93 93 93 98 98 102 102 106 106 106 106 106 113 113 113 113 113 Device RN1206 RN1207 RN1208 RN1209 RN1210 RN1211 RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 -
OCR Scan
RN1417 rn4601 RN1241 RN1242 RN1243 RN1244 RN1301 RN1302
Abstract: 2.2 4.7 10 10 10 10 RN1221 RN2221 RN1222 RN2222 RN1223 RN2223 RN1224 RN2224 RN1225 RN2225 RN1226 -
OCR Scan
RN2226 2sa1015 sot-23 diode 2sa1015 2SC1815 2SA1015 VRN2501/ RN1502 RN2502
Abstract: RN1225 (2-4E1A) ECB. R RN2225 200* -5 -0.02 13* R1/R2 1K/10K RN1226 (2-4E1A) ECB, R RN2226 200* -5 -
OCR Scan
RN2301 RN2302 RN2303 RN2304 en2222 8N23 EN2222 8N2223
Abstract: * RN1223 * RN1224 * RN1225 * RN1226 * RN1227 * RN1241 * RN1242 * RN1243 * RN1244 RN1301 RN1302 RN1303 -
OCR Scan
02CZ2 02CZ5 02CZ6 02CZ27 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 2N5551 2SC1815 2SK246 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124
Abstract: RN1226 RN1225 RN1224 RN1223 RN1222 RN1221 NPN E C MINI B R2 RN5006 -
Original
LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2sc2240 equivalent 2N3904 MOTOROLA 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A
Abstract: RN1326A RN2326A RN1226 RN2226 RN1426 RN2426 2.2 10 RN1327A RN2327A RN1227 Toshiba
Original
toshiba YK smd marking bdj0097a smd marking Yd rn4983 VA MARKING 2904 SMD IC 050106DAA1 SC-70 12341D5AD BDJ0097A
Abstract: RN1226 RN2226 RN1426 RN2426 2.2 10 RN1327A RN2327A RN1227 RN2227 RN1427 RN2427 5.6 10 -
OCR Scan
ERI - 35 - 2 YE 0515 transistor 2SC2458 2SA1314 2SC3326 diode marking YF MQ SC-62 80MIN 120-4O RN2001 RN2002 RN2003 RN2009
Abstract: 2.2 4.7 10 10 10 10 RN1221 RN2221 RN1222 RN2222 RN1223 RN2223 RN1224 RN2224 RN1225 RN2225 RN1226 Toshiba
Original
TC7SZ08FU lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU 3407C-0209
Abstract: * RN1223 * RN1224 * RN1225 * RN1226 * RN1227 * RN1241 * RN1242 * RN1243 * RN1244 RN1301 RN1302 RN1303 Toshiba
Original
TPCA*8030 TPCA*8036 TPC8A03 TPC8037 Sj 88a diode TPCA8028 TC7SHU04FU SC-88A TC7SH08FU TC7SH14FU TC7SH32FU TC7SH86FU
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