RLS244 - Datasheet Archive

 

SILICON EPITAXIAL PLANAR DIODE High Voltage Switching General Purpose Rectification Applications Features · Glass sealed

 

RLS244 RLS244 SILICON EPITAXIAL PLANAR DIODE High Voltage Switching General Purpose Rectification Applications Features · Glass sealed envelope. (MSD) · VRM = 250V guaranteed. · High reliability. Absolute Maximum Ratings (Ta = 25oC) Parameter Symbol Limits Unit Peak reverse voltage VRM 250 V DC reverse voltage VR 220 V Peak forward current IFM 625 mA Mean rectifying current IO 200 mA Surge current(1s) Isurge 1000 mA Power dissipation Ptot 300 mW Tj 175 O -65 to +175 O Junction temperature Storage temperature TS C C Characteristics at Ta = 25oC Symbol Min. Typ. Max. Unit Forward voltage at IF = 200mA VF - - 1.5 V Reverse current at VR = 220V IR - - 10 uA Capacitance between terminals at f = 1MHz CT - - 3 pF Reverse recovery time at IF = 20mA, IR = 20mA, RL = 50 trr - - 75 ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/08/2002