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RH1499M RH1499 14-LEAD MIL-STD-883 - Datasheet Archive
10MHz, 6V/µs, Quad Rail-to-Rail Input and Output Precision C-Load Op Amp Description Absolute Maximum Ratings The RH1499 is
RH1499M RH1499M 10MHz, 6V/µs, Quad Rail-to-Rail Input and Output Precision C-Load Op Amp Description Absolute Maximum Ratings The RH1499 RH1499 is a quad, rail-to-rail input and output precision C-LoadTM op amp with a 10MHz gain-bandwidth product and a 6V/µs slew rate. (Note 1) The RH1499 RH1499 is designed to maximize input dynamic range by delivering precision performance over the full supply voltage. Using a patented technique, the input stages of the RH1499 RH1499 are trimmed, one at the negative supply and the other at the positive supply. The resulting guaranteed common mode rejection is much better than other railto-rail input op amps. When used as a unity-gain buffer in front of single supply 12-bit A-to-D converters, the RH1499 RH1499 is guaranteed to add less than 1LSB of error even in single 5V supply systems. Total Supply Voltage (V+ to V).36V Input Current.±10mA . Output Short-Circuit Duration (Note 2).Continuous Operating Temperature Range. 55°C to 125°C Specified Temperature Range. 55°C to 125°C Junction Temperature . 150°C Storage Temperature Range. 65°C to 150°C . Lead Temperature (Soldering, 10 sec). 300°C With 110dB of supply rejection, the RH1499 RH1499 maintains its performance over a supply range of 4.5V to 36V. The inputs can be driven beyond the supplies without damage or phase reversal of the output. These op amps remain stable while driving capacitive loads up to 10,000pF . The wafer lots are processed to Linear Technology's inhouse Class S flow to yield circuits usable in stringent military and space applications. L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. C-Load is a trademark of Linear Technology Corporation. All other trademarks are the property of their respective owners. Burn-In Circuit Package Information TOP VIEW 50k OUT A 100 RH1499M RH1499M BI +IN D 4 11 V 5 10 +IN C 6 9 IN C OUT B 16V 12 IN B 50k IN D 3 +IN B + 13 V+ RH1499M RH1499M OUT D 2 +IN A 14 IN A 16V 1 7 8 OUT C W PACKAGE 14-LEAD 14-LEAD CERAMIC FLATPAK rh1499mff RH1499M RH1499M Table 1: Electrical Characteristics (Preirradiation) VS = ±15V, VCM = VOUT = 0V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS VOS MIN VCM = V+, V VCM = 14.5V, 14.5V Input Offset Voltage Input Offset Voltage Match VCM = V+ to V VCM = 14.5V to 14.5V (Channel-to-Channel) (Note 3) IB Input Bias Current = V+, V VCM VCM = 14.5V, 14.5V Input Offset Current 800 250 0 250 715 715 250 0 0 12 200 6 3 70 Input Voltage Range 55°C TA 125°C SUBMIN TYP MAX GROUP UNITS 1400 3 VCM = V+, V VCM = 14.5V, 14.5V Input Noise Voltage TA = 25°C SUBTYP MAX GROUP 200 VCM = V+ VCM = 14.5V VCM = V VCM = 14.5V Input Bias Current Match (Channel-to-Channel) (Note 3) IOS NOTES 15 0.1Hz to 10Hz 1 15 1200 500 0 nA nA nA nA 50 400 nA nA 40 1 1800 500 1200 1100 450 1 300 14.5 2, 3 µV µV 350 µV µV 2, 3 2, 3 14.5 nA nA V 400 nVP-P en Input Noise Voltage Density f = 1kHz 12 nV/Hz in Input Noise Current Density f = 1kHz 0.3 pA/Hz AVOL Large-Signal Voltage Gain VO = 14.5V to 14.5V, RL = 10k VO = 10V to 10V, RL = 2k CMRR Common Mode Rejection Ratio VCM = V+ to V VCM = 14.5V to 14.5V CMRR Match (Channel-to-Channel) (Note 3) VCM = V+ to V VCM = 14.5V to 14.5V Power Supply Rejection Ratio VS = ±2V to ±16V PSRR Match (Channel-to-Channel) (Note 3) VS = ±2V to ±16V Output Voltage Swing (Low) (Note 4) No Load ISINK = 1mA ISINK = 10mA ISINK = 5mA PSRR VOL VOH Output Voltage Swing (High) (Note 4) No Load ISOURCE = 1mA ISOURCE = 10mA ISOURCE = 5mA 1000 500 102 84 103 90 3 2300 90 3 5200 110 83 4 110 ±15 10 150 800 102 100 88 100 100 4 2.5 75 420 4 30 100 500 86 82 18 50 230 4 100 80 1 400 25 1 60 4 ISC Short-Circuit Current ±30 IS Supply Current per Amp GBW Gain-Bandwidth Product f = 100kHz 6.8 Slew Rate AV = 1, RL = 10k, VO = ±10V, Measure at VO = ±5V 3.5 6 2.5 2, 3 75 150 500 5 100 1 25 250 800 ±12 2.2 5.8 4 4 5, 6 5, 6 mV mV mV mV mV mV mV mV 2, 3 3 mA 2, 3 mA 8.5 2.2 dB dB 25 70 ±7.5 dB dB dB dB 300 1 V/mV V/mV 2, 3 180 10.5 SR 1.8 5, 6 MHz 5, 6 V/µs rh1499mff RH1499M RH1499M Table 1A: Electrical Characteristics (Postirradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. SYMBOL PARAMETER VOS Input Offset Voltage 10Krad (Si) MIN MAX 20Krad (Si) MIN MAX 50Krad (Si) MIN MAX 100Krad (Si) MIN MAX 200Krad (Si) MIN MAX UNITS VCM = V+, V 950 950 950 950 950 µV = V+, V 765 815 865 915 965 nA 100 100 100 100 100 nA CONDITIONS IB Input Bias Current VCM IOS Input Offset Current NOTES VCM = V+, V V Input Voltage Range V V+ V V+ V V+ V V+ V CMRR Common Mode Rejection Ratio VO = 14.5V to 14.5V, RL = 10k 500 500 500 500 500 V/mV VO = 10V to 10V, RL = 2k AVOL Large-Signal Voltage Gain V+ 250 250 250 250 250 V/mV VCM = V+ to V 86 86 86 86 86 dB 83 83 83 83 83 dB 90 90 90 90 90 dB 83 83 83 83 83 dB CMRR Match VCM = V+ to V (Channel-to-Channel) PSRR Power Supply Rejection Ratio 3 VS = ±2V to ±16V PSRR Match VS = ±2V to ±16V (Channel-to-Channel) 3 Output Voltage Swing Low No Load ISINK = 1mA ISINK = 10mA 4 60 100 500 60 100 500 60 100 500 60 100 500 60 100 500 mV mV mV Output Voltage Swing High VOUT No Load ISOURCE = 1mA ISOURCE = 10mA 4 20 150 800 20 150 800 20 150 800 20 150 800 20 150 800 mV mV mV ISC Short-Circuit Current ±10 IS Supply Current GBW Gain-Bandwidth Product f = 100kHz SR Slew Rate AV = 1, RL = 10k, VO = ±10V, Measure at VO = ±5V ±10 2.5 ±10 2.5 ±10 2.5 ±10 2.5 mA 2.5 mA 4.5 4.5 4.5 4.5 4.5 MHz 3 3 3 3 3 V/µs rh1499mff RH1499M RH1499M Table 2: Electrical Characteristics (Preirradiation) VS = 5V; VCM = VOUT = half supply, unless otherwise noted. SYMBOL PARAMETER CONDITIONS VOS MIN VCM = V+, V VCM = V+ 0.5V, V + 0.5V Input Offset Voltage Input Offset Voltage Match VCM = V+ to V VCM = V+ 0.5V, V + 0.5V (Channel-to-Channel) (Note 3) IB Input Bias Current VCM = V+, V VCM = V+ 0.5V, V + 0.5V Input Offset Current 800 200 0 250 650 650 250 0 0 10 180 5 3 65 V Input Voltage Range 55°C TA 125°C MIN TYP MAX 1400 3 VCM = V+, V VCM = V+ 0.5V, V + 0.5V Input Noise Voltage TA = 25°C SUBTYP MAX GROUP 150 VCM = V+ VCM = V+ 0.5V VCM = V VCM = V + 0.5V Input Bias Current Match (Channel-to-Channel) (Note 3) IOS NOTES 0.1Hz to 10Hz 1 SUBGROUP UNITS 1100 350 1800 0 450 1100 1100 450 0 nA nA nA nA 0 1 30 400 nA nA 15 300 1 V+ V + 0.5V 2, 3 µV µV 300 µV µV 2, 3 2, 3 V+ 0.5V nA nA V 400 nVP-P en Input Noise Voltage Density f = 1kHz 12 nV/Hz in Input Noise Current Density f = 1kHz 0.3 pA/Hz CIN Input Capacitance AVOL Large-Signal Voltage Gain VS = 5V, VO = 75mV to 4.8V, RL = 10k 600 3800 CMRR Common Mode Rejection Ratio VS = 5V, VCM = V+ to V VS = 5V, VCM = 0.5V to 4.5V 76 90 CMRR Match (Channel-to-Channel) (Note 3) VS = 5V, VCM = V+ to V VS = 5V, VCM = 0.5V to 4.5V 75 91 Power Supply Rejection Ratio VS = 4.5V to 12V, VCM = VO = 0.5V 88 105 PSRR Match (Channel-to-Channel) (Note 3) VS = 4.5V to 12V, VCM = VO = 0.5V 82 120 VOL Output Voltage Swing (Low) (Note 4) No Load ISINK = 1mA ISINK = 2.5mA 4 14 50 90 30 100 200 4 25 65 110 75 150 220 5, 6 mV mV mV VOH Output Voltage Swing (High) (Note 4) No Load ISOURCE = 1mA ISOURCE = 2.5mA 4 2.5 70 140 10 150 250 4 5 100 180 25 250 300 5, 6 mV mV mV ISC Short-Circuit Current VS = 5V 2, 3 mA IS Supply Current per Amp 2, 3 mA GBW Gain-Bandwidth Product VS = 5V, f = 100kHz 6.8 10.5 SR Slew Rate VS = ±2.5V, AV = 1, RL = 10k,VO = ±2V, Measure at VO = ±1V 2.6 4.5 PSRR 5 3 3 ±12.5 pF 4 210 68 5, 6 85 1 dB dB 2.2 86 104 80 1 118 ±5 1 2, 3 2 3.6 2.7 8.5 2 dB dB ±10 5.8 4 V/mV dB dB 66 24 1.7 60 MHz 5, 6 V/µs rh1499mff RH1499M RH1499M Table 2A: Electrical Characteristics (Postirradiation) VS = 5V; VCM = half supply, TA = 25°C, unless otherwise noted. SYMBOL PARAMETER CONDITIONS 10Krad (Si) NOTES MIN MAX 20Krad (Si) MIN MAX 50Krad (Si) MIN MAX 100Krad (Si) MIN MAX 200Krad (Si) MIN MAX UNITS VOS Input Offset Voltage VCM = V+, V 950 950 950 950 950 µV IB Input Bias Current VCM = V+, V 700 750 800 850 900 nA IOS Input Offset Current VCM = V+, V 65 nA 65 Large-Signal Voltage VO = 75mV to V+ 0.2V Gain R1 = 10k 300 300 300 300 300 V/mV CMRR Common Mode Rejection Ratio 70 70 70 70 70 dB 70 70 70 70 70 dB 88 88 88 88 88 dB 82 82 82 82 82 dB PSRR VOUT Power Supply Rejection Ratio ISC VS = 4.5V to 12V, VCM = VO = 0.5V PSRR Match VS = 4.5V to 12V, (Channel-to-Channel) VCM = VO = 0.5V Output Voltage No Load Swing Low ISINK = 1mA ISINK = 2.5mA Output Voltage Swing High No Load ISOURCE = 1mA ISOURCE = 2.5mA Short-Circuit Current IS Slew Rate 3 V V+ V V+ V V+ V 4 60 100 200 60 100 200 60 100 200 60 100 200 60 100 200 mV mV mV 4 20 150 250 20 150 250 20 150 250 20 150 250 20 150 250 mV mV mV ±8 Supply Current SR 3 V+ 65 Input Voltage Range CMRR Match VCM = V+ to V (Channel-to-Channel) V 65 AVOL VCM = V+ to V V+ 65 V ±8 2.2 VS = ±2.5V, AV = 1, RL = 10k, VO = ±2V, Measure at VO = ±1V Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: A heat sink may be required to keep the junction temperature below this absolute maximum rating when the output is shorted indefinitely. 2 ±8 2.2 2 ±8 2.2 2 ±8 2.2 2 mA 2.2 2 mA V/µs Note 3: Matching parameters are the difference between amplifiers A and D and between B and C. Note 4: Output voltage swings are measured between the output and power supply rails. rh1499mff RH1499M RH1499M Table 2: Electrical Test Requirements MIL-STD-883 MIL-STD-883 TEST REQUIREMENTS Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6 Group A Test Requirements (Method 5005) PDA Test Notes SUBGROUP 1,2,3,4,5,6 Group B and D for Class S, and End Point Electrical Parameters (Method 5005) The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. 1,2,3 Linear Technology Corporation reserves the right to test to tighter limits than those given. *PDA applies to subgroup 1. See PDA Test Notes. Total Dose Bias Circuit 40pF 5k 15V 8V 5k + 15V RH1499 RH1499 TC rh1499mff RH1499M RH1499M Typical Performance Characteristics Large-Signal Voltage Gain RL = 10k 6000 4000 VS = 5V VO = 75mV TO 4.8V 2000 0 VS = ±15V VO = ±10V RL = 2k 2000 1000 1 10 100 TOTAL DOSE-Krad (Si) 0 1000 4 2 1 10 100 TOTAL DOSE-Krad (Si) 0 1000 VS = ±15, 5V 200 20 IOS (nA) 40 0 0 10 100 TOTAL DOSE-Krad (Si) 20 40 600 1 200 400 1 60 800 1000 1 10 100 TOTAL DOSE-Krad (Si) RH1499 RH1499 G04 1 VS = ±15V, 5V VCM = 0V V V CM ±2V VS ±16V VCM = 0V 140 VS = ±15V 100 PSRR (dB) CMRR (dB) 110 600 1000 Power Supply Rejection Ratio 160 V+ 120 400 10 100 TOTAL DOSE-Krad (Si) RH1499 RH1499 G06 Common Mode Rejection Ratio 130 200 IB (nA) 80 1000 RH1499 RH1499 G05 Input Bias Current 0 VS = ±15V, 5V VCM = 0V 60 400 VOS (µV) 3 1000 Input Offset Current 80 VS = ±15V, 5V VCM = 0V 600 0 10 100 TOTAL DOSE-Krad (Si) RH1499 RH1499 G03 Input Offset Voltage 800 2 1 RH1499 RH1499 G02 Supply Current per Amp 4 VS = ±15V VO = ±10V RL = 10k 6 RH1499 RH1499 G01 IS (mA) Slew Rate 8 3000 VS = ±15V VO = ±14.5V AVOL (V/mV) AVOL (V/mV) Large-Signal Voltage Gain 4000 SLEW RATE (V/µs) 8000 90 VS = 5V 80 70 120 100 60 800 1 10 100 TOTAL DOSE-Krad (Si) 1000 RH1499 RH1499 G07 50 1 10 100 TOTAL DOSE-Krad (Si) 1000 RH1499 RH1499 G08 80 1 10 100 TOTAL DOSE-Krad (Si) 1000 RH1499 RH1499 G09 rh1499mff RH1499M RH1499M Typical Performance Characteristics Supply Current vs Supply Voltage 2.0 TA = 25°C TA = 55°C 1.0 0.5 0 0 4 8 12 16 20 24 28 32 TOTAL SUPPLY VOLTAGE (V) 1.0 0.5 25 75 50 25 TEMPERATURE (°C) 100 0 100 TA = 125°C 200 TA = 25°C 125 400 2 1 0 2 3 4 5 1 COMMON MODE VOLTAGE (V) 6 RH1499 RH1499 G12 VS = ±15V VCM = 15V 300 1000 100 200 NPN ACTIVE 0 25 50 75 100 125 TEMPERATURE (°C) VS = 5V, 0V VCM = 5V PNP ACTIVE 100 VS = ±15V VCM = 15V 0 100 200 VS = 5V, 0V VCM = 0V 300 400 50 35 20 5 10 25 40 55 70 85 100 TEMPERATURE (°C) RH1499 RH1499 G13 RH1499 RH1499 G14 Output Saturation Voltage vs Load Current (Output High) Output Saturation Voltage vs Load Current (Output Low) 1000 SATURATION VOLTAGE (mV) 1000 SATURATION VOLTAGE (mV) TA = 55°C 400 INPUT BIAS CURRENT (nA) OPEN LOOP VOLTAGE GAIN (V/mV) 0 Input Bias Current vs Temperature RL = 2k VS = ±15V 25 100 RH1499 RH1499 G11 Open-Loop Voltage Gain vs Temperature 10 50 200 300 RH1499 RH1499 G10 10000 VS = 5V, 0V 300 VS = 5V, 0V 1.5 0 50 36 400 VS = ±15V INPUT BIAS CURRENT (nA) TA = 125°C SUPPLY CURRENT PER AMPLIFIER (mA) SUPPLY CURRENT PER AMPLIFIER (mA) 2.0 1.5 Input Bias Current vs Common Mode Voltage Supply Current vs Temperature 100 10 TA = 55°C TA = 125°C 1 0.001 TA = 25°C 0.01 0.1 1 LOAD CURRENT (mA) 10 RH1499 RH1499 G15 100 TA = 25°C TA = 125°C 10 TA = 55°C 1 0.001 0.01 0.1 1 LOAD CURRENT (mA) 10 RH1499 RH1499 G16 rh1499mff Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507 www.linear.com ID No. 66-10-1499 · LT 0110 REV F · PRINTED IN USA LINEAR TECHNOLOGY CORPORATION 2003