RH1499M RH1499 14-LEAD MIL-STD-883 - Datasheet Archive

 

10MHz, 6V/µs, Quad Rail-to-Rail Input and Output Precision C-Load Op Amp DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH1499 is

 

RH1499M RH1499M 10MHz, 6V/µs, Quad Rail-to-Rail Input and Output Precision C-Load Op Amp DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH1499 RH1499 is a quad, rail-to-rail input and output precision C-LoadTM op amp with a 10MHz gain-bandwidth product and a 6V/s slew rate. (Note 1) The RH1499 RH1499 is designed to maximize input dynamic range by delivering precision performance over the full supply voltage. Using a patented technique, the input stages of the RH1499 RH1499 are trimmed, one at the negative supply and the other at the positive supply. The resulting guaranteed common mode rejection is much better than other railto-rail input op amps. When used as a unity-gain buffer in front of single supply 12-bit A-to-D converters, the RH1499 RH1499 is guaranteed to add less than 1LSB of error even in single 3V supply systems. Total Supply Voltage (V+ to V­) .36V Input Current.±10mA Output Short-Circuit Duration (Note 2) . Continuous Operating Temperature Range. ­55°C to 125°C Specified Temperature Range . ­55°C to 125°C Junction Temperature . 150°C Storage Temperature Range. ­65°C to 150°C Lead Temperature (Soldering, 10 sec) . 300°C With 110dB of supply rejection, the RH1499 RH1499 maintains its performance over a supply range of 2.2V to 36V. The inputs can be driven beyond the supplies without damage or phase reversal of the output. These op amps remain stable while driving capacitive loads up to 10,000pF . The wafer lots are processed to Linear Technology's inhouse Class S flow to yield circuits usable in stringent military and space applications. L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. C-Load is a trademark of Linear Technology Corporation. All other trademarks are the property of their respective owners. BURN-IN CIRCUIT PACKAGE INFORMATION TOP VIEW 50k OUT A 100 RH1499M RH1499M BI +IN D 4 11 V­ 5 10 +IN C 6 9 ­IN C OUT B ­16V 12 ­IN B 50k ­IN D 3 +IN B + 13 V+ RH1499M RH1499M OUT D 2 +IN A ­ 14 ­IN A 16V 1 7 8 OUT C W PACKAGE 14-LEAD 14-LEAD CERAMIC FLATPAK rh1499mfe 1 RH1499M RH1499M TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) VS = ±15V, VCM = VOUT = 0V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS VOS MIN VCM = V+, V­ VCM = 14.5V, ­14.5V Input Offset Voltage Input Offset Voltage Match VCM = V+ to V­ (Channel-to-Channel) VCM = 14.5V to ­14.5V (Note 3) IB Input Bias Current = V+, V­ VCM VCM = 14.5V, ­14.5V Input Offset Current ­55°C TA 125°C SUBMIN TYP MAX GROUP UNITS 800 1 0 250 ­250 500 0 12 6 ­15 0.1Hz to 10Hz ­500 0 nA nA nA nA 400 nA nA 40 300 2, 3 0 200 70 1 Input Voltage Range 1200 V V 715 ­1200 3 1800 1400 1 ­715 1100 50 250 2, 3 V V 350 450 3 VCM = V+, V­ VCM = 14.5V, ­14.5V Input Noise Voltage TA = 25°C SUBTYP MAX GROUP 200 VCM = V+ VCM = 14.5V VCM = V­ VCM = ­14.5V Input Bias Current Match (Channel-to-Channel) (Note 3) IOS NOTES 15 ­14.5 2, 3 14.5 nA nA V 400 nVP-P en Input Noise Voltage Density f = 1kHz 12 nV/Hz in Input Noise Current Density f = 1kHz 0.3 pA/Hz AVOL Large-Signal Voltage Gain VO = ­14.5V to 14.5V, RL = 10k VO = ­10V to 10V, RL = 2k CMRR Common Mode Rejection Ratio VCM = V+ to V­ VCM = 14.5V to ­14.5V CMRR Match (Channel-to-Channel) (Note 3) VCM = V+ to V­ VCM = 14.5V to ­14.5V Power Supply Rejection Ratio VS = ±2V to ±16V PSRR Match (Channel-to-Channel) (Note 3) VS = ±2V to ±16V Output Voltage Swing (Low) (Note 4) No Load ISINK = 1mA ISINK = 10mA ISINK = 5mA PSRR VOL VOH Output Voltage Swing (High) (Note 4) ISC Short-Circuit Current IS No Load ISOURCE = 1mA ISOURCE = 10mA ISOURCE = 5mA 1000 500 2300 90 102 400 V/mV V/mV 25 100 2, 3 102 dB dB 100 dB dB 88 100 82 100 1 103 90 3 5, 6 80 84 4 60 86 3 5200 110 83 110 18 50 230 1 ±15 Supply Current per Amp 10 150 800 ±30 1.8 GBW Gain-Bandwidth Product f = 100kHz 6.8 Slew Rate AV = ­1, RL = 10k, VO = ±10V, Measure at VO = ±5V 3.5 6 2.5 ±7.5 1 10.5 SR 1 500 5 100 4 75 150 25 250 300 2.5 75 420 4 25 70 4 800 ±12 2.2 5.8 4 4 5, 6 5, 6 mV mV mV mV mV mV mV mV 2, 3 3 mA 2, 3 mA 8.5 2.2 dB dB 180 4 30 100 500 2, 3 MHz 5, 6 V/s rh1499mfe 2 RH1499M RH1499M TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. SYMBOL PARAMETER VOS Input Offset Voltage 10Krad (Si) MIN MAX 20Krad (Si) MIN MAX 50Krad (Si) MIN MAX 100Krad (Si) MIN MAX 200Krad (Si) MIN MAX UNITS VCM = V+, V­ 950 950 950 950 950 V = V+, V­ 765 815 865 915 965 nA 100 100 100 100 100 nA CONDITIONS IB Input Bias Current VCM IOS Input Offset Current NOTES VCM = V+, V­ V­ Input Voltage Range V­ V+ V­ V+ V­ V+ V­ V+ V CMRR Common Mode Rejection Ratio VO = ­14.5V to 14.5V, RL = 10k 500 500 500 500 500 V/mV VO = ­10V to 10V, RL = 2k AVOL Large-Signal Voltage Gain V+ 250 250 250 250 250 V/mV VCM = V+ to V­ 86 86 86 86 86 dB 83 83 83 83 83 dB 90 90 90 90 90 dB 83 83 83 83 83 dB CMRR Match VCM = V+ to V­ (Channel-to-Channel) PSRR Power Supply Rejection Ratio VS = ±2V to ±16V PSRR Match VS = ±2V to ±16V (Channel-to-Channel) VOUT 3 3 Output Voltage Swing Low No Load ISINK = 1mA ISINK = 10mA 4 60 100 500 60 100 500 60 100 500 60 100 500 60 100 500 mV mV mV Output Voltage Swing High No Load ISOURCE = 1mA ISOURCE = 10mA 4 20 150 800 20 150 800 20 150 800 20 150 800 20 150 800 mV mV mV ISC Short-Circuit Current ±10 IS Supply Current GBW Gain-Bandwidth Product f = 100kHz SR Slew Rate AV = ­1, RL = 10k, VO = ±10V, Measure at VO = ±5V ±10 2.5 ±10 2.5 ±10 2.5 ±10 2.5 mA 2.5 mA 4.5 4.5 4.5 4.5 4.5 MHz 3 3 3 3 3 V/s rh1499mfe 3 RH1499M RH1499M TABLE 2: ELECTRICAL CHARACTERISTICS (Preirradiation) VS = 3V, 5V; VCM = VOUT = half supply, unless otherwise noted. SYMBOL PARAMETER CONDITIONS VOS MIN VCM = V+, V­ VCM = V+ ­ 0.5V, V­ + 0.5V Input Offset Voltage Input Offset Voltage Match VCM = V+ to V­ (Channel-to-Channel) VCM = V+ ­ 0.5V, V­ + 0.5V (Note 3) IB Input Bias Current VCM = V+, V­ VCM = V+ ­ 0.5V, V­ + 0.5V Input Offset Current ­55°C TA 125°C MIN TYP MAX SUBGROUP UNITS 800 1 250 0 ­250 10 450 1100 ­450 0 nA nA nA nA 30 400 nA nA 15 300 V­ 0.1Hz to 10Hz 2, 3 0 180 65 1 Input Voltage Range V V 650 3 5 0 1400 1 ­650 1800 0 0 1100 ­1100 200 2, 3 V V 300 350 3 VCM = V+, V­ VCM = V+ ­ 0.5V, V­ + 0.5V Input Noise Voltage TA = 25°C SUBTYP MAX GROUP 150 VCM = V+ VCM = V+ ­ 0.5V VCM = V­ VCM = V­ + 0.5V Input Bias Current Match (Channel-to-Channel) (Note 3) IOS NOTES V+ V­ + 0.5V 2, 3 V+ ­ 0.5V nA nA V 400 nVP-P en Input Noise Voltage Density f = 1kHz 12 nV/Hz in Input Noise Current Density f = 1kHz 0.3 pA/Hz CIN Input Capacitance AVOL Large-Signal Voltage Gain CMRR Common Mode Rejection Ratio CMRR Match (Channel-to-Channel) (Note 3) 5 VS = 5V, VO = 75mV to 4.8V, RL = 10k VS = 3V, VO = 75mV to 2.8V, RL = 10k 600 3800 500 2000 VS = 5V, VCM = V+ to V­ VS = 3V, VCM = V+ to V­ VS = 5V, VCM = 0.5V to 4.5V VS = 3V, VCM = 0.5V to 2.5V 76 72 pF 90 86 VS = 5V, VCM = V+ to V­ VS = 3V, VCM = V+ to V­ VS = 5V, VCM = 0.5V to 4.5V VS = 3V, VCM = 0.5V to 2.5V 4 60 210 25 210 1 2, 3 68 65 3 75 70 91 86 85 85 1 2, 3 66 62 88 1 120 82 86 104 80 105 82 5, 6 118 2, 3 V/mV V/mV dB dB dB dB dB dB dB dB dB Power Supply Rejection Ratio VS = 2.2V to 12V, VCM = VO = 0.5V PSRR Match (Channel-to-Channel) (Note 3) VS = 2.2V to 12V, VCM = VO = 0.5V Output Voltage Swing (Low) (Note 4) No Load ISINK = 1mA ISINK = 2.5mA 4 14 50 90 30 100 200 4 25 65 110 75 150 220 5, 6 mV mV mV Output Voltage Swing (High) (Note 4) No Load ISOURCE = 1mA ISOURCE = 2.5mA 4 2.5 70 140 10 150 250 4 5 100 180 25 250 300 5, 6 mV mV mV ISC Short-Circuit Current VS = 5V VS = 3V IS Supply Current per Amp PSRR VOL VOH 3 ±12.5 ±12 24 19 1.7 1 2.2 1 ±5 ±5 dB ±10 ±9.5 2 2, 3 2.7 mA mA 2, 3 mA rh1499mfe 4 RH1499M RH1499M TABLE 2: ELECTRICAL CHARACTERISTICS (Preirradiation) VS = 3V, 5V; VCM = VOUT = half supply, unless otherwise noted. NOTES MIN TA = 25°C SUBTYP MAX GROUP SYMBOL PARAMETER CONDITIONS GBW Gain-Bandwidth Product VS = 5V, f = 100kHz 6.8 10.5 SR Slew Rate VS = ±2.5V, AV = ­1, RL = 10k,VO = ±2V, Measure at VO = ±1V 2.6 4.5 ­55°C TA 125°C MIN TYP MAX 5.8 8.5 2 3.6 SUBGROUP UNITS 4 MHz 5, 6 V/s TABLE 2A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = 5V, 3V; VCM = half supply, TA = 25°C, unless otherwise noted. SYMBOL PARAMETER VOS IB IOS Input Offset Voltage Input Bias Current Input Offset Current CONDITIONS 10Krad (Si) NOTES MIN MAX 20Krad (Si) MIN MAX 50Krad (Si) MIN MAX 100Krad (Si) MIN MAX VCM = V+, V­ 950 950 950 950 950 V VCM = V+, V­ 700 750 800 850 900 nA VCM = V+, V­ 65 nA V+ V 65 V­ Input Voltage Range = 75mV to V+ ­ 0.2V AVOL Large-Signal Voltage VO Gain R1 = 10k CMRR Common Mode Rejection Ratio PSRR Power Supply Rejection Ratio V+ 65 V­ V+ 65 V­ V+ V­ 3 300 300 300 V/mV 70 70 70 70 dB 70 70 70 70 70 dB 88 3 300 70 VS = 2.2V to 12V, VCM = VO = 0.5V PSRR Match VS = 2.2V to 12V, (Channel-to-Channel) VCM = VO = 0.5V 65 V­ 300 VCM = V+ to V­ CMRR Match VCM = V+ to V­ (Channel-to-Channel) V+ 200Krad (Si) MIN MAX UNITS 88 88 88 88 dB 82 82 82 82 82 dB Output Voltage Swing Low No Load ISINK = 1mA ISINK = 2.5mA 4 60 100 200 60 100 200 60 100 200 60 100 200 60 100 200 mV mV mV Output Voltage Swing High VOUT No Load ISOURCE = 1mA ISOURCE = 2.5mA 4 20 150 250 20 150 250 20 150 250 20 150 250 20 150 250 mV mV mV ISC Short-Circuit Current IS Supply Current SR Slew Rate ±8 ±8 2.2 VS = ±2.5V, AV = ­1, RL = 10k, VO = ±2V, Measure at VO = ±1V 2 Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: A heat sink may be required to keep the junction temperature below this absolute maximum rating when the output is shorted indefinitely. ±8 2.2 2 ±8 2.2 2 ±8 2.2 2 mA 2.2 2 mA V/s Note 3: Matching parameters are the difference between amplifiers A and D and between B and C. Note 4: Output voltage swings are measured between the output and power supply rails. rh1499mfe 5 RH1499M RH1499M TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 MIL-STD-883 TEST REQUIREMENTS Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6 Group A Test Requirements (Method 5005) PDA Test Notes SUBGROUP 1,2,3,4,5,6 Group B and D for Class S, and End Point Electrical Parameters (Method 5005) The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. 1,2,3 Linear Technology Corporation reserves the right to test to tighter limits than those given. *PDA applies to subgroup 1. See PDA Test Notes. TOTAL DOSE BIAS CIRCUIT 40pF 5k 15V ­ 5k 8V + ­15V RH1499 RH1499 TC rh1499mfe 6 RH1499M RH1499M TYPICAL PERFORMANCE CHARACTERISTICS Large Signal Voltage Gain RL = 10k 6000 Slew Rate 8 VS = ±15V VO = ±10V RL = 2k 3000 VS = ±15V VO = ±14.5V AVOL (V/mV) AVOL (V/mV) Large Signal Voltage Gain 4000 4000 VS = 5V VO = 75mV TO 4.8V 2000 VS = ±15V VO = ±10V RL = 10k 6 SLEW RATE (V/s) 8000 2000 1000 4 2 VS = 3V VO = 75mV TO 2.8V 0 0 1 10 100 TOTAL DOSE-Krad (Si) 1000 0 10 100 TOTAL DOSE-Krad (Si) 1 RH1499 RH1499 G01 VS = ±15, 5V, 3V 3 VS = ±15V, 5V, 3V VCM = 0V 200 20 IOS (nA) VOS (V) 40 0 0 ­20 ­400 ­40 ­600 0 ­60 ­800 1 10 100 TOTAL DOSE-Krad (Si) 1000 ­80 1 10 100 TOTAL DOSE-Krad (Si) RH1499 RH1499 G04 VS = ±15V, 5V, 3V VCM = 0V V­ V CM ±2V VS ±16V VCM = 0V 140 VS = ±15V 100 VS = 5V PSRR (dB) CMRR (dB) 110 ­600 1000 Power Supply Rejection Ratio 160 V+ 120 ­400 10 100 TOTAL DOSE-Krad (Si) RH1499 RH1499 G06 Common Mode Rejection Ratio 130 ­200 IB (nA) 1 1000 RH1499 RH1499 G05 Input Bias Current 0 VS = ±15V, 5V, 3V VCM = 0V 60 ­200 1 1000 Input Offset Current 80 400 2 10 100 TOTAL DOSE-Krad (Si) RH1499 RH1499 G03 Input Offset Voltage 800 600 IS (mA) 1 RH1499 RH1499 G02 Supply Current per Amp 4 1000 90 VS = 3V 80 120 100 70 60 ­800 80 50 1 10 100 TOTAL DOSE-Krad (Si) 1000 RH1499 RH1499 G07 1 10 100 TOTAL DOSE-Krad (Si) 1000 RH1499 RH1499 G08 1 10 100 TOTAL DOSE-Krad (Si) 1000 RH1499 RH1499 G09 rh1499mfe 7 RH1499M RH1499M TYPICAL PERFORMANCE CHARACTERISTICS Supply Current vs Supply Voltage 2.0 TA = 125°C TA = 25°C 1.5 TA = ­55°C 1.0 0.5 0 4 8 12 16 20 24 28 32 TOTAL SUPPLY VOLTAGE (V) 400 300 VS = 5V, 0V 1.5 1.0 0.5 75 50 25 TEMPERATURE (°C) 100 0 Open-Loop Voltage Gain vs Temperature 0 ­100 TA = 125°C ­200 TA = 25°C 125 ­400 ­2 ­1 0 2 3 4 5 1 COMMON MODE VOLTAGE (V) 6 RH1499 RH1499 G12 400 RL = 2k VS = ±15V VS = ±15V VCM = 15V 300 1000 100 200 NPN ACTIVE 10 ­50 0 ­25 25 50 75 100 125 TEMPERATURE (°C) VS = 5V, 0V VCM = 5V PNP ACTIVE VS = ±15V VCM = ­15V 100 0 ­100 ­200 VS = 5V, 0V VCM = 0V ­300 ­400 ­50 ­35 ­20 ­5 10 25 40 55 70 85 100 TEMPERATURE (°C) RH1499 RH1499 G13 RH1499 RH1499 G14 Output Saturation Voltage vs Load Current (Output High) Output Saturation Voltage vs Load Current (Output Low) 1000 SATURATION VOLTAGE (mV) 1000 SATURATION VOLTAGE (mV) TA = ­55°C Input Bias Current vs Temperature INPUT BIAS CURRENT (nA) OPEN LOOP VOLTAGE GAIN (V/mV) 100 RH1499 RH1499 G11 RH1499 RH1499 G10 10000 200 ­300 0 ­50 ­25 36 VS = 5V, 0V VS = ±15V INPUT BIAS CURRENT (nA) SUPPLY CURRENT PER AMPLIFIER (mA) SUPPLY CURRENT PER AMPLIFIER (mA) 2.0 0 Input Bias Current vs Common Mode Voltage Supply Current vs Temperature 100 10 TA = ­55°C 100 TA = 25°C TA = 125°C 10 TA = ­55°C TA = 125°C TA = 25°C 1 0.001 0.01 0.1 1 LOAD CURRENT (mA) 10 RH1499 RH1499 G15 1 0.001 0.01 0.1 1 LOAD CURRENT (mA) 10 RH1499 RH1499 G16 rh1499mfe 8 Linear Technology Corporation ID No. 66-10-1499 · LT 0909 REV E · PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507 www.linear.com © LINEAR TECHNOLOGY CORPORATION 2003