RH1028M RH1128M RH1028 RH1128 MIL-PRF-38535 MIL-STD-883 MIL-STD-1835 TM1019

RH1028M / RH1128M, ULTRALOW NOISE PRECISION HIGH SPEED OP AMP DICE REVISION RECORD REV DESCRIPTION DATE 0 INITIAL RELEASE

SPEC NO. 05-08-5238 REV. B RH1028M RH1028M / RH1128M RH1128M, ULTRALOW NOISE PRECISION HIGH SPEED OP AMP DICE REVISION RECORD REV DESCRIPTION DATE 0 INITIAL RELEASE 02/12/09 A PAGE 11, REMOVE UNNECESSARY TEST CONDITIONS FROM PSRR AND CMRR. CHANGED TEST CONDITIONS ON PSRR. 04/13/09 B CORRECT REVISION TYPOS ON PAGE 1 OF DOCUMENT; UP-REV FROM `0' TO `B' 09/24/09 CAUTION: ELECTROSTATIC DISCHARGE SENSITIVE PART REVISION INDEX REVISION INDEX PAGE NO. REVISION PAGE NO. REVISION 1 B 2 B 3 B 4 B 5 B 6 B 7 B PROG FUNCT 9 B 10 B 11 B 12 B 13 B LINEAR TECHNOLOGY CORPORATION MILPITAS, CALIFORNIA ORIG DSGN ENGR MFG CM QA APPLICATION 8 B TITLE: MICROCIRCUIT, LINEAR, RH1028 RH1028 / RH1128 RH1128 ULTRALOW NOISE PRECISION HIGH SPEED OP AMP DICE SIZE DATE DRAWING NUMBER REV 64155 SIGNOFFS CAGE CODE 05-08-5238 B CONTRACT: FOR OFFICIAL USE ONLY _ LINEAR TECHNOLOGY CORPORATION Page 1 of 13 SPEC NO. 05-08-5238 REV. B 1.0 SCOPE: 1.1 2.0 RH1028M RH1028M / RH1128M RH1128M, ULTRALOW NOISE PRECISION HIGH SPEED OP AMP DICE This specification defines the performance and test requirements for a microcircuit processed to a space level manufacturing flow. APPLICABLE DOCUMENTS: 2.1 Government Specifications and Standards: the following documents listed in the Department of Defense Index of Specifications and Standards, of the issue in effect on the date of solicitation, form a part of this specification to the extent specified herein. SPECIFICATIONS: MIL-PRF-38535 MIL-PRF-38535 MIL-STD-883 MIL-STD-883 3.0 Test Method and Procedures for Microcircuits MIL-STD-1835 MIL-STD-1835 2.2 Integrated Circuits (Microcircuits) Manufacturing, General Specification for Microcircuits Case Outlines Order of Precedence: In the event of a conflict between the documents referenced herein and the contents of this specification, the order of precedence shall be this specification, MIL-PRF-38535 MIL-PRF-38535 and other referenced specifications. REQUIREMENTS: 3.1 General Description: This specification details the requirements for the RH1028M RH1028M / RH1128M RH1128M, Ultra Noise Precision High Speed Op Amps Dice and Element Evaluation Test Samples, processed to space level manufacturing flow as specified herein. 3.2 Part Number: 3.3 Special Handling of Dice: Rad Hard dice require special handling as compared to standard IC dice. Rad Hard dice are susceptible to surface damage due to the absence of silicon nitride passivation as on standard dice. Silicon nitride protects the dice surface from scratches by its hard and dense properties. The passivation on Rad Hard dice is silicon dioxide which is much "softer" than silicon nitride. RH1028M RH1028M Dice / RH1128M RH1128M Dice LTC recommends that dice handling be performed with extreme care so as to protect the dice surface from scratches. If the need arises to move the die around from the chip tray, use a Teflon tipped vacuum wand. This wand can be made by pushing a small diameter of Teflon tubing onto the tip of a steel tipped wand. The inside diameter of the Teflon tip should match the dice size for efficient pickup. The tip of the Teflon should be cut square and flat to ensure good vacuum to dice surface. Ensure the Teflon tip remains clean from debris by inspecting under stereo scope. During die attach, care must be exercised to ensure no tweezers touch the top of the dice. _ LINEAR TECHNOLOGY CORPORATION Page 2 of 13 SPEC NO. 05-08-5238 REV. B RH1028M RH1028M / RH1128M RH1128M, ULTRALOW NOISE PRECISION HIGH SPEED OP AMP DICE 3.4 The Absolute Maximum Ratings (Note 1) Supply Voltage (-55°C TO 125°C) . . . . . . . . . . . . . +16V Differential Input Current (Note 9) . . . . . . . . . . . . . +25mA . . . . . . . . . . . . . Input Voltage Equal to Supply Voltage . . . . . . . . . . . . . Output Short Circuit Duration Indefinite Operating Temperature Range . . . . . . . . . . . -55°C to 125°C . . . . . . . . . . . . Storage Temperature Range -65°C to 150°C Lead Temperature (Soldering, 10 sec.) . . . . . . . . . . . . 300°C Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. 3.5 Design, Construction, and Physical Dimensions: Detail design, construction, physical dimensions, and electrical requirements shall be specified herein. 3.6 Outline Dimensions and Pad Functions: Dice outline dimensions, pad functions, and locations shall be specified in Figure 1. 3.7 Radiation Hardness Assurance (RHA): 3.7.1 The manufacturer shall perform a lot sample test as an internal process monitor for total dose radiation tolerance. The sample test is performed with MIL-STD-883 MIL-STD-883 TM1019 TM1019 Condition A as a guideline. 3.7.2 For guaranteed radiation performance to MIL-STD-883 MIL-STD-883, Method 1019, total dose irradiation, the manufacturer will provide certified RAD testing and report through an independent test laboratory when required as a customer purchase order line item. 3.7.3 Total dose bias circuit is specified in Figure 2. 3.8 3.9 Wafer Lot Acceptance: Wafer lot acceptance shall be in accordance with MIL-PRF-38535 MIL-PRF-38535, Appendix A, except for the following: Top side glassivation thickness shall be a minimum of 4KÅ. 3.10 Wafer Lot Acceptance Report: SEM is performed per MIL-STD-883 MIL-STD-883, Method 2018. Copies of SEM photographs shall be supplied with the Wafer Lot Acceptance Report as part of a Space Data Pack when specified as a customer purchase order line item. 3.11 4.0 Wafer (or Dice) Probe: Dice shall be 100% probed at Ta = +25°C to the limits shown in Table I herein. All reject dice shall be removed from the lot. This testing is normally performed prior to dicing the wafer into chips. Final specifications after assembly are sample tested during the element evaluation. Traceability: Wafer Diffusion Lot and Wafer traceability shall be maintained through Quality Conformance Inspection. QUALITY CONFORMANCE INSPECTION: Quality Conformance Inspection shall consist of the tests and inspections specified herein. _ LINEAR TECHNOLOGY CORPORATION Page 3 of 13 SPEC NO. 05-08-5238 REV. B 5.0 RH1028M RH1028M / RH1128M RH1128M, ULTRALOW NOISE PRECISION HIGH SPEED OP AMP DICE SAMPLE ELEMENT EVALUATION: A sample from each wafer supplying dice shall be assembled and subjected to element evaluation per Table III herein. 5.1 100 Percent Visual Inspection: All dice supplied to this specification shall be inspected in accordance with MIL-STD-883 MIL-STD-883, Method 2010, Condition A. All reject dice shall be removed from the lot. 5.2 Electrical Performance Characteristics for Element Evaluation: The electrical performance characteristics shall be as specified in Table I and Table II herein. 5.3 Sample Testing: Each wafer supplying dice for delivery to this specification shall be subjected to element evaluation sample testing. No dice shall be delivered until all the lot sample testing has been performed and the results found to be acceptable unless the customer supplies a written approval for shipment prior to completion of wafer qualification as specified in this specification. 5.4 Part Marking of Element Evaluation Sample Includes: 5.4.1 LTC Logo 5.4.2 LTC Part Number 5.4.3 Date Code 5.4.4 Serial Number 5.4.5 ESD Identifier per MIL-PRF-38535 MIL-PRF-38535, Appendix A 5.4.6 Diffusion Lot Number 5.4.7 Wafer Number 5.5 5.6 Mechanical/Packaging Requirements: Case Outline and Dimensions are in accordance with Figure 4. 5.7 Terminal Connections: The terminal connections shall be as specified in Figure 5. 5.8 6.0 Burn-In Requirement: Burn-In circuit for W package is specified in Figure 3. Lead Material and Finish: The lead material and finish shall be alloy 42 with hot solder dip (Finish letter A) in accordance with MIL-PRF-38535 MIL-PRF-38535. VERIFICATION (QUALITY ASSURANCE PROVISIONS) 6.1 Quality Assurance Provisions: Quality Assurance provisions shall be in accordance with MIL-PRF38535 MIL-PRF38535. Linear Technology is a QML certified company and all Rad Hard candidates are assembled on qualified Class S manufacturing lines. 6.2 Sampling and Inspection: Sampling and Inspection shall be in accordance with Table III herein. 6.3 Screening: Screening requirements shall be in accordance with Table III herein. 6.4 Source Inspection: _ LINEAR TECHNOLOGY CORPORATION Page 4 of 13 SPEC NO. 05-08-5238 REV. B RH1028M RH1028M / RH1128M RH1128M, ULTRALOW NOISE PRECISION HIGH SPEED OP AMP DICE 6.4.1 6.4.2 6.5 The manufacturer will coordinate Source Inspection at wafer lot acceptance and pre-seal internal visual. The procuring activity has the right to perform source inspection at the supplier's facility prior to shipment for each lot of deliverables when specified as a customer purchase order line item. This may include wafer lot acceptance, die visual, and final data review. Deliverable Data: Deliverable data that will ship with devices when a Space Data Pack is ordered: 6.5.1 Lot Serial Number Sheets identifying all Canned Sample devices accepted through final inspection by serial number. 6.5.2 6.5.3 100% attributes (completed element evaluation traveler). Element Evaluation variables data, including Burn-In and Op Life 6.5.4 SEM photographs (3.10 herein) 6.5.5 Wafer Lot Acceptance Report (3.9 herein) 6.5.6 A copy of outside test laboratory radiation report if ordered 6.5.7 Certificate of Conformance certifying that the devices meet all the requirements of this specification and have successfully completed the mandatory tests and inspections herein. Note: Items 6.5.1 and 6.5.7 will be delivered as a minimum, with each shipment. 7.0 Packaging Requirements: Packaging shall be in accordance with Appendix A of MIL-PRF-38535 MIL-PRF-38535. All dice shall be packaged in multicavity containers composed of conductive, anti-static, or static dissipative material with an external conductive field shielding barrier. _ LINEAR TECHNOLOGY CORPORATION Page 5 of 13 SPEC NO. 05-08-5238 REV. B RH1028M RH1028M / RH1128M RH1128M, ULTRALOW NOISE PRECISION HIGH SPEED OP AMP DICE DICE OUTLINE DIMENSIONS AND PAD FUNCTIONS FIGURE 1 _ LINEAR TECHNOLOGY CORPORATION Page 6 of 13 SPEC NO. 05-08-5238 REV. B RH1028M RH1028M / RH1128M RH1128M, ULTRALOW NOISE PRECISION HIGH SPEED OP AMP DICE TOTAL DOSE BIAS CIRCUIT FIGURE 2 _ LINEAR TECHNOLOGY CORPORATION Page 7 of 13 SPEC NO. 05-08-5238 REV. B RH1028M RH1028M / RH1128M RH1128M, ULTRALOW NOISE PRECISION HIGH SPEED OP AMP DICE BURN-IN CIRCUIT FIGURE 3 _ LINEAR TECHNOLOGY CORPORATION Page 8 of 13 SPEC NO. 05-08-5238 REV. B RH1028M RH1028M / RH1128M RH1128M, ULTRALOW NOISE PRECISION HIGH SPEED OP AMP DICE (W10) GLASS SEALED FLATPACK / 10LEADS 10LEADS CASE OUTLINE ja = +170°C/W jc = +40°C/W FIGURE 4 _ LINEAR TECHNOLOGY CORPORATION Page 9 of 13 SPEC NO. 05-08-5238 REV. B RH1028M RH1028M / RH1128M RH1128M, ULTRALOW NOISE PRECISION HIGH SPEED OP AMP DICE TERMINAL CONNECTIONS FIGURE 5 _ LINEAR TECHNOLOGY CORPORATION Page 10 of 13 SPEC NO. 05-08-5238 REV. B RH1028M RH1028M / RH1128M RH1128M, ULTRALOW NOISE PRECISION HIGH SPEED OP AMP DICE TABLE I DICE ELECTRICAL CHARACTERISTICS Element Evaluation (Notes 1, 2) (PRE-IRRADIATION) Note 1: Input offset voltage measurements are performed by automatic test equipment approximately 0.5 seconds after application of power. Note 2: Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please refer to LTC standard product data sheet for other applicable product information. Please consult factory For more information on dice performance and lot qualifications via lot sampling test procedures. Dice data sheet subject to change. Please consult factory for current revision in production. _ LINEAR TECHNOLOGY CORPORATION Page 11 of 13 SPEC NO. 05-08-5238 REV. B RH1028M RH1028M / RH1128M RH1128M, ULTRALOW NOISE PRECISION HIGH SPEED OP AMP DICE TABLE II: ELECTRICAL CHARACTERISTICS (NOTE 4) (POST-IRRADIATION) Note 3: Input offset voltage measurements are performed by automatic test equipment approximately 0.5 seconds after application of power. In addition, at TA = 25° offset voltage is measured with the chip heated to C, approximately 55° to account for the chip t emperature rise when the device is fully warmed up. C Note 4: Post-Irradiation electrical characteristics are based on LTC standard product data sheet. _ LINEAR TECHNOLOGY CORPORATION Page 12 of 13 CLASS SUBGROUP K/S H/B OPERATION 1 X SEM 2 X X ELEM ENT ELECTRICAL (WAFER SORT @25° ) C 3 X X ELEM ENT VISUAL (2nd OP) 4 X X INTERNAL VISUAL (3rd OP) X DIE SHEAR M ONITOR X BOND PULL M ONITOR 5 X STABILIZATION BAKE X TEM PERATURE CYCLE X CONSTANT ACCELERATION X FINE LEAK X GROSS LEAK 6 X FIRST ROOMELECTRICAL - READ & RECORD (REPLACE ANY ASSEM BLY-RELATED REJECTS) X ELECT. READ & RECORD @+125° or +150° , -55° C C C X X X 7 BURN-IN: +125° /240 hrs. or +150° C C/120 C/120 hrs. POST BURN-IN ELECTRICAL @25° READ & RECORD C PRE OP-LIFE ELECTRICAL @25° READ & RECORD C X X X OPERATINGLIFE: +125° /1000 hrs. or +150° C C/500 C/500 hr s. POST OP-LIFE ELECT. (R&R 25° , +125° or +150° , -55° ) C C C C X WIRE BOND EVALUATION M IL-STD-883 IL-STD-883 M ETHOD CONDITION 2018 N/A 2010 2010 2019 2011 1008 1010 2001 1014 1014 A A C C E A C QUANTITY (ACCEPT NUM BER) REF. M ETHOD 2018 FOR S/S 100% 100% ASSEM BLED PARTS ONLY ASSEM BLED PARTS ONLY 43 (3) 1015 1005 +125° M UM C INIM 24 0 HOURS +125° M UM C INIM 1000 HOURS 2011 NOTE: LTC is not qualified to process to M IL-PRF-38534 IL-PRF-38534. This is an LTC im posed elem evaluation that follows ent M IL-STD-883 IL-STD-883 test methods and conditions. Please note the quantity and accept num froma Sam Size Series of ber ple 15% accept on 3, and note that the actual sam and accept num does not begin until Subgroup 6. , ple ber NOTE: Tests within Subgroup 5 m be perform in any sequence. ay ed NOTE: LTC's radiation tolerant (RH) die has a topside glassivation thickness of 4KÅ m um inim . NOTE: Sample sizes on the travelers m be larger than that indicated in the above table; however, the larger sam size is ay ple to accom modate extra units for replacem devices in the event of equipm or operator error and for assembly ent ent related rejects in Subgroup 6, and for Wire Bond Evaluation, Subgroup 7. The larger sam size is at all tim ple es kept segregated and, if used for qualification, has all the required processing im posed. 15 (0) or 25 (1) - # of wires _ LINEAR TECHNOLOGY CORPORATION Page 13 of 13 TABLE III RH ELEMENT EVALUATION TABLE QUALIFICATION OF DICE SALES RH1028M RH1028M / RH1128M RH1128M, ULTRALOW NOISE PRECISION HIGH SPEED OP AMP DICE SPEC NO. 05-08-5238 REV. B RH CANNED SAM TABLE FOR QUALIFYING DICE SALES PLE