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| Part Number | Manufacturer | Description | ||||||
| 1. |  RFP4N35 |
Intersil Corporation | 4A, 350V and 400V, 2.000 ?, N-Channel Power MOSFETs | 38.51 Kb | 4 Pg. | |||
| 2. | RFP4N35 |
General Electric Solid State | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V, | 203.89 Kb | 4 Pg. | |||
| 3. | RFP4N35 |
Harris Semiconductor | Power MOSFET Data Book 1990 | 224.34 Kb | 4 Pg. | |||
| 4. | RFP4N35 |
Toshiba | Power MOSFETs Cross Reference Guide | 161.9 Kb | 67 Pg. |
| « Previous 1 Next » |
| 1. |  38.52 Kb • 4 Pages |
Abstract: ... RFM4N35, RFM4N40, RFP4N35, RFP4N40. 4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications ... Labels: RFP4N35, Application Notes |
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| 2. |  161.9 Kb • 67 Pages |
Abstract: ... RFP4N35 350 2 4 TO-220AB 2SK2679 B Harris. RFP4N40 400 2 4 TO-220AB 2SK2679 B Harris. RFP50N05 50 0.022 50 TO-220AB 2SK2886 B Harris. RFP50N05L 50 0.022 50 TO-220AB 2SK2551 B Harris. RFP5P12 -120 1 5 TO ... Labels: RFP4N35, Cross Reference |
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