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  1 - 9 of about 9 for RFP4N06   
  Part Number Manufacturer   Description      
 1.   RFP4N06  RFP4N06 Intersil Corporation   4A, 50V and 60V, 0.800 ?, N-Channel Power MOSFETs 40.16 Kb  5 Pg.  
 2.   RFP4N06  RFP4N06 General Electric Solid State   N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V, 234.41 Kb  4 Pg.  
 3.   RFP4N06  RFP4N06 Harris Semiconductor   Power MOSFET Data Book 1990 248.11 Kb  4 Pg.  
 4.   RFP4N06  RFP4N06 Toshiba   Power MOSFETs Cross Reference Guide 161.9 Kb  67 Pg.  
 5.   RFP4N06L  RFP4N06L General Electric Solid State   N-channel logic level power field-effect transistor (LL FET). 60V, 4A. 235.31 Kb  4 Pg.  
 6.   RFP4N06L  RFP4N06L Intersil Corporation   4A, 50V and 60V, 0.800 ?, Logic Level, N-Channel Power MOSFETs 35.56 Kb  5 Pg.  
 7.   RFP4N06L  RFP4N06L Harris Semiconductor   Power MOSFET Data Book 1990 255.56 Kb  4 Pg.  
 8.   RFP4N06L  RFP4N06L Toshiba   Power MOSFETs Cross Reference Guide 161.9 Kb  67 Pg.  
 9.   RFP4N06L  RFP4N06L Fairchild Semiconductor   4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFET 333.3 Kb  5 Pg.  
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  1 - 2 of about 2+ for RFP4N06   
1. Datasheet Text Contains RFP4N06
40.15 Kb  •  5 Pages

Abstract: ... RFP4N05, RFP4N06. 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching ...

Labels: RFP4N06

Datasheet

  
2. Datasheet Text Contains RFP4N06
161.9 Kb  •  67 Pages

Abstract: ... RFP4N06 60 0.8 4 TO-220AB Harris. Revised 1Q '99 - 48 - A:Nearest, B:Different Package. Power MOSFETs Cross Reference Alphanumerically. Part V. DSS RDS(ON) ID PD Package Toshiba Note Vender. Number ...

Labels: RFP4N06, Cross Reference

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