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Part Manufacturer Description Datasheet BUY
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil

RFN10 DIODE

Catalog Datasheet MFG & Type PDF Document Tags

RFN-10

Abstract: T2D DIODE RFN10T2D Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification Dimensions (Unit : mm) 4.5±0.3 0.1 10.0±0.3 0.1 2.8±0.2 0.1 Structure 3)Low switching loss , RFN10 T2D 8.0±0.2 12.0±0.2 15.0±0.4 0.2 8.0 0.7±0.1 0.05 Features 1)Cathode common Dual type , Unit V V A A C C Tc=122°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value , Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=5A VR=200V IF
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RFN-10 T2D DIODE T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE AVE24 R1120A

T2D DIODE 02

Abstract: T2D DIODE Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10T2DFH Applications General rectification Dimensions (Unit : mm) Structure 4.5±0.3 ã''ã''ã'' 0.1 2.8±0.2 ã''ã''ã'' 0.1 â'  1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10 , week factory) Conditions Limits 200 200 Tc=122°C 1/2Io at per diode 60Hz half sin wave , ns Rth(j-c) junction to case ï¼ ï¼ 2.5 °C/W Thermal Resistance * per diode
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T2D DIODE 02 T2D DIODE 16 T2D 80 diode T2D 80_ diode

RFN-10

Abstract: RFN10NS3S Data Sheet Super Fast Recovery Diode RFN10NS3S lSeries Standard Fast Recovery lDimensions (Unit : mm) lLand size figure (Unit : mm) lApplications General rectification RFN10 NS3S lFeatures 1)Low switching loss 2)High current overload capacity 3)Cathode common single type ROHM : LPDS JEITA : TO263S lStructure lConstruction Silicon epitaxial planer Manufacture Year, Week and Day lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Tc=25C) Parameter
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AVE13

RFN10-NS3S

Abstract: rfn10 Data Sheet Super Fast Recovery Diode RFN10NS3S lSeries Standard Fast Recovery lDimensions (Unit : mm) lLand size figure (Unit : mm) lApplications General rectification RFN10 NS3S lFeatures 1)Low switching loss 2)High current overload capacity 3)Cathode common single type ROHM : LPDS JEITA : TO263S lStructure lConstruction Silicon epitaxial planer Manufacture Year, Week and Day lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Tc=25C) Parameter
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RFN10-NS3S

T2D DIODE

Abstract: RFN-10 Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification Dimensions (Unit : mm) 4.5±0.3 0.1 10.0±0.3 0.1 2.8±0.2 0.1 Structure 3)Low switching loss 14.0±0.5 1.3 0.8 (1) (2) (3) 13.5MIN Construction Silicon epitaxial planer 1.2 5.0±0.2 RFN10 , Unit V V A A C C Tc=122°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value , Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=5A VR=200V IF
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T2D 6 N diode T2D 8 diode diode T2D T2D 75 diode T2D DIODE 60 T2D 1 DIODE

RFN-10

Abstract: Data Sheet Super Fast Recovery Diode RFN10TF6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure zApplications General rectification zFeatures 1)Low switching loss 2)High current overload capacity RFN10 TF6S zConstruction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week zAbsolue Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward
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RFN10NS3S

Abstract: RFN10-NS3S RFN10NS3S Data Sheet Super Fast Recovery Diode RFN10NS3S lSeries Standard Fast Recovery lDimensions (Unit : mm) lLand size figure (Unit : mm) lApplications General rectification RFN10 NS3S lFeatures 1)Low switching loss 2)High current overload capacity 3)Cathode common single type ROHM : LPDS JEITA : TO263S lStructure lConstruction Silicon epitaxial planer Manufacture Year, Week and Day lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Tc=25C) Parameter
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rfn10n D080A
Abstract: Data Sheet Super Fast Recovery Diode RFN10TF6S zDimensions(Unit : mm) zSerise Standard Fast Recovery zStructure zApplications General rectification RFN10 TF6S zFeatures 1)Low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week zAbsolu e Maximum Ratings(Tc=25°C) Symbol Conditions Limits Repetitive peak reverse voltage Parameter VRM Duty 0.5 600 V Reverse voltage ROHM
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Abstract: Data Sheet Super Fast Recovery Diode RFN10TF6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure zApplications General rectification RFN10 TF6S zFeatures 1)Low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week zAbsolu e Maximum Ratings(Tc=25°C) Symbol Conditions Limits Unit Repetitive peak reverse voltage Parameter VRM Duty 0.5 600 V Reverse ROHM
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Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10TF6SFH zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure zApplications General rectification RFN10 TF6S zFeatures 1)Low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week zAbsolu e Maximum Ratings(Tc=25°C) Symbol Conditions Limits Unit Repetitive peak reverse voltage Parameter VRM Duty 0.5 ROHM
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RFN10NS6S

Abstract: Data Sheet Super Fast Recovery Diode RFN10NS6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zApplications General rectification zLand Size Figure(Unit : mm) RFN10 NS6S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolu e Maximum Ratings(Tc=25°C) Parameter Symbol Conditions Limits Unit
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RFN-10

Abstract: RFN10NS6S Data Sheet Super Fast Recovery Diode RFN10NS6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN10 NS6S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S Manufacture Date zTaping Dimensions(Unit : mm) zAbsolue Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average
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RFN-10

Abstract: RFN10NS6S RFN10NS6S Data Sheet Super Fast Recovery Diode RFN10NS6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN10 NS6S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S Manufacture Date zTaping Dimensions(Unit : mm) zAbsolue Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse
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RFN-10

Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10NS6SFH zSerise Standard Fast Recovery zLand Size Figure(Unit : mm) zDimensions(Unit : mm) zApplications General rectification RFN10 NS6S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolu e Maximum Ratings(Tc=25°C) Parameter Symbol Conditions
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RFN-10

Abstract: RFN10TF6S RFN10TF6S Data Sheet Super Fast Recovery Diode RFN10TF6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure zApplications General rectification zFeatures 1)Low switching loss 2)High current overload capacity RFN10 TF6S zConstruction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week zAbsolue Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average
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