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| Part Number | Manufacturer | Description | ||||||
| 1. |  RFM10P15 |
General Electric Solid State | P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -150V. Drain current Rms continuous 10A. | 234.76 Kb | 4 Pg. | |||
| 2. | RFM10P15 |
General Electric Solid State | (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | 243.5 Kb | 4 Pg. | |||
| 3. | RFM10P15 |
Harris Semiconductor | Power MOSFET Data Book 1990 | 243.38 Kb | 4 Pg. |
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| 1. |  302.91 Kb • 5 Pages |
Abstract: ... Thermal Resistance, Junction to Case RθJC RFM10P12, RFM10P15 - - 1.25. oC/W. RFP10P12, RFP10P15 1.67 oC/W. Source to Drain Diode Specifications. PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ... Labels: RFM10P15 |
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