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RF605

Catalog Datasheet MFG & Type PDF Document Tags

MRF406 MOTOROLA

Abstract: MOTOROL A SC -CDI0DES/0PT03- 34 DE | b 3 h 7 S S S 003fl0afl 1 '6367255 MOTOROLA SC (DIODES/OPTO) 34C 38088 SILICON RF^t N a NSISTOR DICE: (continued) T~33-/3 DIE NO. - NPN LINE SOURCE - RF605.417 This die provides performance equal to or better than that of the following device types: MRF406 MRFC406 Designed primarily for applications as a power linear amplifier from 2.0 to 30 MHz. · Specified 30 MHz, 12.5 Vdc Characteristics PM = 20 watts (PEP) G pe = 12 dB (min
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MRF406 MOTOROLA

MRF221

Abstract: mrf433 M O T O R O L A SC -CDIODES/OPTO} 34 DE~|fc.3fc.7a5S 003Ö071 i 6367255 MOTOROLA SC (DIO DES/OPTO ) 34c 38071 0 SILICON RF TRANSISTOR DICE (continued) DIE NO. - NPN LINE SOURCE - RF605.419 This die provides performance equal to or better than that of the following device types: 2N6081 MRF209 MRF221 MRF433 2C6081 Designed for 12.5 volts VHF largesignal power amplifier applications. · Specified 175 MHz, 12.5 Vdc Characteristics Poui = 1 5 watts Gpe = 6.3
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MRF476

Abstract: DIE npn RF MOTOROLA SC -CDIODES/OPTOÏ 34 DE | t , 3 b ? a S S OCi af l CHO 7 [ 6367255 MOTOROLA SC
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MRF476 DIE npn RF MOTOROLA TRANSISTOR 712 108 motorola transistor SILICON DICE motorola MRFC476

MRF475

Abstract: MOTOROLA SC -CDIODES/OPTO} ~34 b3ti7S55 0D3fl[]fll i 6 3 6 7 2 5 5 M O T O R O L A SC (D I O D E S / O P T O ) 34C 3 8 0 8 9 D S IL IC O N R F 'T R A N S IS T O R D IC E (continued) r - i i« o 7 DIE NO. - NPN LINE SOURCE - RF605.714 MRFC475 This die provides performance equal to or better than that of the following device types: MRF475 Designed primarily for use in single sideband linear amplifier output applications. · Specified 30 MHz, 13.6 Vdc
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2N5642 motorola

Abstract: M O T O R O L A SC { D I O D E S / O P T O } 34 D F |b3L7E S S 00 3 fl a t .a 6367255 MOTOROLA SC
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2N5642 motorola 2N5642 2C5642
Abstract: MOTOROLA SC -CMODES/OPTÔ} Ï4 dËT| bBbTaSS 03flDbfl 3 f' 6367255 MOTOROLA SC (DIODES/OPTO) SILICON RF TRANSISTOR DICE (continued) 34C 38068 D DIE NO. - NPN LINE SOURCE - RF605.452 This die provides performance equal to or better than that of the following device types: 2N5946 2C5946 Designed for 7.0 to 15 volts UHF power amplifier applications in commercial and industrial FM equipment. · Specified 470 MHz, 12.5 Vdc Characteristics Pom = 10 watts GP e = 6.0 dB (min) Efficiency = 60 -
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ice3

Abstract: MRFC321 motorola SC -CDIODES/OPTOl ^34 »F|b3t:75SS 0030005 3 ! 6367255 MOTOROLA SC ( D IO D E S /O P T O ) d ic e 3 4C 38085 D s ilic o n ftF T r a n s is t o r (continued) r - ?3 - *? DIE NO. - NPN LINE SOURCE - RF605.761 This die provides performance equal to or better than that of the following device types: MRF321 MRFC321 Designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range. ·
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ice3

2N6095

Abstract: 2C6095 MO T O R O L A SC {DIODES/OPTO 34 DeT J L 3 b 7 5 5 5 0D3fi074 | 6367255 MOTOROLA SC (DIODES/OPTO) 38074 D SILICON RF TR A N SISTO R DICE (continued) 7^3 3 0 / DIE NO. - PNP LINE SOURCE - RF605.324 This die provides performance equal to or better than that of the following device types: 2N6095 MRF432 2C6095 Designed for 12.5 volts VHF largesignal amplifier applications. · Specified 175 M Hz, 12.5 Vdc Characteristics = 15 watts G pe = 6.3 dB (min
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MRF323

Abstract: MOTORO LA SC -CDIODES/OPTOJ 34 DE | b B b 7 E S S 003Ô0SL, S | ~ 6367255 MOTOROLA SC CDIODES/OPTO) 3^C 38086 D SILICON RF TRANSISTOR DICE (continued) die no. - npn LINE SOURCE - RF605.762 This die provides performance equal to or better than that of the following device types: MRF323 MRFC323 · Specifications 400 MHz, 28 Vdc Characteristics PM = 20 watts (CW) Gpe = 10 dB (CW, 400 MHz) Minimum Efficiency = 50% (CW, 400 MHz) Designed primarily for wideband
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2N5945 Motorola

Abstract: MOTOROLA SC -CDIODES/OPTOÏ 34 D E | b3L7E55 3flQb7 1 Î 6367255 ' * MOTOROLA SC
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2N5945 Motorola 3L7E55 2N5945 2C5945

mrf222

Abstract: 2C6082 MOTOROLA SC Î D I O D E S / O P T O } 34 D E J b 3 b 7 2 5 S 0036075 S | ~ 6 3 6 7 2 5 5 M O T O R O L A SC (DIODES/OPTO) 34C 3 8 0 7 2 T ~ ?J~(/ D 'SlÜcfcN RF TRANSISTOR DICE (continued) DIE NO. - NPN LINE SOURCE - RF605.481 2C6082 c* Designed for 12.5 volts VHF large-signal amplifier applications. This die provides performance equal to or better than that of the following device types: 2N6082 MRF222 MRF233 MRF234 MRF449.A · Specified 175 MHz, 12.5 Vdc
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MRF449A

motorola transistor 614

Abstract: 2N5641 MOTOROLA SC {DI ODES /O PTOl T m »FJb3t,7ESS 0Q3fl0tl Q ! 6 3 6 7 2 5 5 MOTOROLA SC (DIODES/OPTO) 34C 38061 SILICON R F TRANSISTOR DICE (continued) r - / 3 - 07 D DIE NO. 2C5641 - NPN LINE SOURCE - RF605.165 & T his die provides perform ance equal to or better than that of the following device types: 2N5641 D e sig n ed primarily for w ideband large-signal amplifier stages in the 125-175 M H z frequency range. · Specified 175 MHz, 28 Vdc Characteristics Pout =
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motorola transistor 614 2N5641/D

MRF220

Abstract: Motorola 2N6080 MOTOROL A SC -CDIODES/OPTO} 34 D rjb 3 b 7 2 S S 003A070 j 6367255 MOTOROLA SC (D IO D E S /O P T O ) 34C 38070 D SILICON RF TRANSISTOR DICE (continued) 7"> J ? - O 7 DIE NO. - NPN LINE SOURCE - RF605.418 2C6080 This die provides performance equal to or better than that of the following device types: 2N6080 MRF220 MRF237 Designed for 12.5 volts VHF largesignal power amplifier applications. · Specified 175 MHz, 12.5 Vdc Characteristics Poui = 4 -0 watts G
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Motorola 2N6080 mrf237 MOTOROLA Transistor MRF237 Transistor motorola 418

2N6096

Abstract: SILICON DICE motorola M O T O R O L A SC -CDI0DES/0PT03- 34 » F | t,3L,7ESS 0 0 3 Û G 7 S I 6367255 MOTOROLA SC (D IO D E S /O P T O ) 34C 3 8 0 75 SILICON RF TRANSISTOR DICE (continued) T- it die no. - pnp LINE SOURCE - RF605.325 This die provides performance equal to or better than that of the following device types: 2N6096 2C6096 Designed for 12.5 volts VHF largesignal amplifier applications. · Specified 175 M Hz, 12.5 Vdc Characteristics Pout = 3 0 watts G pe = 5 .7 dB (min
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mrf314a

Abstract: SILICON DICE motorola M O T O R O L A SC O I O D E S / O P T O l - 34 DE |t,3t,7aSS D03flD04 6 3 &7 2 5 5 MOTOROLA SC (DIO DES/O PTO ) 3 4C 38084 ' SILICON RF 'TRANSISTOR DICE (continued) T1 M DIE NO. LINE SOURCE - RF605.780 MRFC314A- n p n This die provides performance equal to or better than that of the following device types: MRF314A Designed primarily for wideband large-signal driver and output amplifier stages in the 30-200 MHz frequency range. · Specified 30-200 MHz, 28 Vdc
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MRFC314A--

2N6094

Abstract: MOTOROLA SC {DIODES/OPTO} 3M D ET|t.3b7255 0030073 7 ! 6367255 MOTOROLA SC (DIODES/OPTO) 34C 38073 0 SILICON RF TRANSISTOR DICE (continued) T *- ? ? - W DIE NO. - PNP LINE SOURCE - RF605.323 This die provides performance equal to or better than that of the following device types: 2N6094 2C6094 1 j_ Designed for 12.5 volts VHF largesignal amplifier applications. · Specified 175 MHz, 12.5 Vdc Characteristics P«n = 4.0 watts Gpe = 12 dB (min
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MRF629

Abstract: MRF227 N O r O R O L A SC -CDI0DES/0PT03- 34 DËIb3b7aSS DG3flQbb 0 1 6 3 6 7 2 5 5 M O T O R O L A SC (DIODES/OPTO) 34C 3 8 0 6 6 ? 05" D SILICON RFTRANSISTOR DICE (continued) DIE NO. - NPN LINE SOURCE - RF605.450 This die provides performance equal to or better than that of the following device types: 2N5944 MRF227 MRF629 2C5944 Designed for 7.0 to 15 volts UHF power amplifier applications in commercial and industrial FM equipment. · Specified 470 MHz, 12.5 Vdc
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2N3950

Abstract: 2N5070 MOTOROLA SC {DIODES/OHTOJ 34 D E ^ | t 3 t ? a S S ' 0D3f i Df l 7 7 "J- 6367255 MOTOROLA SC ( DIODES/OPTO) 34C 38087 D SILICO N RF TR A N SISTO R DICE (continued) 7 ^ 33 - // DIE NO. - NPN LINE SOURCE - RF605.411 MRFC401 This die provides performance equal to or better than that of the following device types: 2N3950 2N5070 2N5071 MRF401 Designed primarily for applications as a high-power linear amplifier from 2.0 to 75 MHz. · Specified 30 MHz, 28 Vdc
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DMX0518

Abstract: MOTOROLA SC Î D I O D E S / O P T O } 34 D E J b 3 b 7 2 5 S 0036075 S | ~ 6 3 6 7 2 5 5 M O T O R O L A SC (DIODES/OPTO) 34C 3 8 0 7 2 T ~ ?J~(/ D 'SlÜcfcN RF TRANSISTOR DICE (continued) DIE NO. - NPN LINE SOURCE - RF605.481 2C6082 c* Designed for 12.5 volts VHF large-signal amplifier applications. This die provides performance equal to or better than that of the following device types: 2N6082 MRF222 MRF233 MRF234 MRF449.A · Specified 175 MHz, 12.5 Vdc
Miteq
Original
DMX0518 DMX0518L DMY0518L DMX0618L DMY0618L DMX0618