RF3375 - Datasheet Archive

 

0 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications · Basestation Applications ·

 

RF3375 RF3375 0 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications · Basestation Applications · Driver Stage for Power Amplifiers · Broadband, Low-Noise Gain Blocks · Final PA for Low-Power Applications · IF or RF Buffer Amplifiers · High Reliability Applications Product Description The RF3375 RF3375 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 input and output impedances and requires only two external DC-biasing elements to operate as specified. 1.04 0.80 0.50 0.30 3.10 2.90 0.48 0.36 2 PL 1.60 1.40 4.60 4.40 2.60 2.40 Dimensions in mm. 1.80 1.45 Shaded lead is pin 1. 1.75 1.40 0.53 0.41 0.43 0.38 Optimum Technology Matching® Applied Si BJT GaAs HBT Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT Package Style: SOT89 GaAs MESFET SiGe Bi-CMOS Features · DC to >6000MHz Operation · Internally Matched Input and Output GND · 13.2dB Small Signal Gain · +28dBm Output IP3 4 1 2 3 RF IN GND RF OUT · +16.0dBm Output P1dB Functional Block Diagram Rev A7 050524 Ordering Information RF3375 RF3375 General Purpose Amplifier RF337XPCBA-41XFully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 4-591 RF3375 RF3375 Absolute Maximum Ratings Parameter Parameter dBm °C °C mA Caution! ESD sensitive device. Unit +13 -40 to +85 -60 to +150 80 Input RF Power Operating Ambient Temperature Storage Temperature ICC Rating Specification Min. Typ. Max. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25 °C, ICC =65mA (See Note 1.) Overall Frequency Range 3dB Bandwidth Gain 12.5 12.5 12.2 12.2 12.0 10.0 Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reverse Isolation +31.0 +28.0 +17.0 +14.5 DC to >6000 6 13.5 13.5 13.2 13.2 13.0 12.4 4.6