NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| RF101L2S | ROHM Electronics | Fast recovery diode |
4 pages, |
Original |  |
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| RF101L2S | ROHM Electronics | Fast Recovery Diode |
2 pages, |
Original | |
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| RF101L2S | ROHM Electronics |
3 pages, |
Original | |
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| RF101L2STE25 | ROHM Electronics | DIODE FAST RECOVERY RECTIFIER 200V 1A 2PMDS T/R |
4 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: RF101L2S Diodes Fast recovery Diode RF101L2S External dimensions (Unit : mm) Applications High frequency rectification Features 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss 2 3 4.5�2 1 4 5.0�3 1.2�3 1.5�2 CATHODE , 3 EX. RF101L2S EX. 2003,09 , 4 贩稭anufacturing date 6,6 3,9 Absolute maximum , handing required. 1/2 RF101L2S Diodes Electrical characteristic curves (Ta=25癈) 100 125癈 ... | Original |
2 pages, |
RF101L2S RF101L2S abstract |
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| Abstract: RF101L2S Diodes Fast recovery Diode RF101L2S Land size figure (Unit : mm) Dimensions (Unit : mm) Applications General rectification Features 1) Small power mold type. (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss Structure Construction Silicon epitaxial , V A ns Conditions IF=1.0A VR=200V Rev.B 1/3 RF101L2S Diodes Electrical characteristic curves (Ta=25 C) Mounted on epoxy board Rev.B 2/3 RF101L2S Diodes Rev.B 3/3 ... | Original |
4 pages, |
RF101L2S RF101L2S abstract |
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| Abstract: SPICE PARAMETER RF101L2S by ROHM FAE Div. * DRF101L2S DRF101L2S D model * Date: 2008/07/30 .MODEL DRF101L2S DRF101L2S D + IS=37.295E-12 295E-12 + N=1.1193 + RS=2.8051E-3 8051E-3 + IKF=17.551E-3 551E-3 + EG=1.0200 + CJO=37.745E-12 745E-12 + M=.4084 + VJ=.49252 + ISR=588.30E-12 30E-12 + NR=2.5000 + BV=200 + TT=30.434E-9 434E-9 + TIKF=0.01 ... | Original |
1 pages, |
tt 3043 RF101L2S DRF101L2S ROHM tt30434e9 TT3043 295E-12 8051E-3 551E-3 745E-12 30E-12 434E-9 RF101L2S abstract |
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| Abstract: RF101L2S Diodes Fast recovery Diode RF101L2S Land size figure (Unit : mm) Dimensions (Unit : mm) Applications General rectification 2.0 2.0 2.6�2 0.1�02 0.1 Structure 2.0�2 1.5�2 Construction Silicon epitaxial planar 5.0�3 6 4.5�2 6 1.2�3 4.2 , VR=200V IF=0.5A,IR=1A,Irr=0.25*IR Rev.B 1/3 RF101L2S Diodes Electrical characteristic curves , 2/3 RF101L2S Diodes 3 2 DC Io V VR t t D=t/ D=t/T VR=100V T T Tj=150 ... | Original |
4 pages, |
RF101L2S diode sod 106 SOD-106 RF101L2S abstract |
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| Abstract: RF101L2S Diodes Fast recovery Diode RF101L2S External dimensions (Unit : mm) Applications High frequency rectification Features 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss 2 3 4.5�2 1 4 5.0�3 1.2�3 1.5�2 CATHODE , 3 EX. RF101L2S EX. 2003,09 , 4 贩稭anufacturing date 6,6 3,9 Absolute maximum , handing required. 1/2 RF101L2S Diodes Electrical characteristic curves (Ta=25癈) 100 125癈 ... | Original |
3 pages, |
RF101L2S RF101L2S abstract |
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| Abstract: RF101L2S Diodes Fast recovery Diode RF101L2S Applications General rectification Land size figure (Unit : mm) External dimensions (Unit : mm) 2.0 2.0 2.6�2 0.1�02 0.1 Structure 2.0�2 1.5�2 Construction Silicon epitaxial planar 5.0�3 6 4.5�2 6 , Conditions IF=1.0A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR Rev.A 1/3 RF101L2S Diodes Electrical , AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS Rev.A 2/3 RF101L2S Diodes 3 ... | Original |
4 pages, |
RF101L2S RF101L2S abstract |
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| Abstract: -RF101A2S -RF101A2S -RF101L2S -RF601B2D -RF601B2D -RB160L-60 -RB160L-60 - STM ... | Original |
1 pages, |
MBR0520PbF MBRS1100T3G MBRS130LT3G SS14 SOD123 SS16 SMB ss36 MURS160T3G MURS320T3G B340A SMB DIODES 1N4005 SMB MBRM130LT1G SS34 smc SS34 sma ss24 SMA MBR0520LT1G MBR0530T1G MBR0520LT1G abstract |
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| Abstract: Limits Unit RF071M2S RF071M2S RF101L2S RF301B2S RF301B2S RF501B2S RF501B2S RF601B2D RF601B2D RF601T2D RF601T2D RF1001T2D RF1001T2D RF1601T2D RF1601T2D RF2001T2D RF2001T2D 200 , Cathode common TO-220FN Part No. IO VR RF071M2S RF071M2S 0.7A RF101L2S Configurate ... | Original |
3 pages, |
TO-220FN RF1001T2D RF101L2S RF1601T2D RF2001T2D RF301B2S RF501B2S RF601B2D RF601T2D RF071M2S datasheet abstract |
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| Abstract: RF103L2S RF103L2S Diodes Fast recovery Diode RF103L2S RF103L2S !External dimensions (Unit : mm) !Applications High frequency rectification !Features 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss 2 3 4.5�2 1 4 5.0�3 1.2�3 1.5�2 CATHODE MARK 0.1 +0.02 -0.1 2.0�2 2.6�2 !Construction Silicon epitaxial planar 1 , 2 贩稵ype No. 3 EX. RF101L2S EX. 2003,09 , 4 贩稭anufacturing date 6,6 3,9 !Absolute maximum ... | Original |
2 pages, |
RF103L2S RF101L2S RF103L2S abstract |
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| Abstract: RF103L2S RF103L2S Diodes Fast recovery Diode RF103L2S RF103L2S !External dimensions (Unit : mm) !Applications High frequency rectification !Features 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss 2 3 4.5�2 1 4 5.0�3 1.2�3 1.5�2 CATHODE MARK 0.1 +0.02 -0.1 2.0�2 2.6�2 !Construction Silicon epitaxial planar 1 , 2 贩稵ype No. 3 EX. RF101L2S EX. 2003,09 , 4 贩稭anufacturing date 6,6 3,9 !Absolute maximum ... | Original |
3 pages, |
RF103L2S RF101L2S RF103L2S abstract |
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