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RF-HDT-SJLS-G1 Texas Instruments
RF-HDT-SNLE-G1 Texas Instruments TAG-IT(TM) HF-I STANDARD TRANSPONDER CHIP (WAFER, INKED, GRIND, SAWN ON TAPE)
RF-HDT-WNMC-M0 Texas Instruments Tag-it(TM) HF-I Plus Transponder Chip (Wafer, unprocessed) 0-WAFERSALE
RF-HDT-AJLC-G0 Texas Instruments
RF-HDT-WNME-M0 Texas Instruments Tag-it(TM) HF-I Standard Transponder Chip (Unprocessed) 0-WAFERSALE
RF-HDT-AJLE-G1 Texas Instruments RF-HDT-AJLE Tag-it(TM) HF-I Standard Transponder Chip (Wafer, bumped, inked, grind, sawn on tape)

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Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 148 Best Price : $1.26 Price Each : $1.32
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RF Transistor s-parameter

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2570A , Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2570A ELECTRICAL , INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Websitewww.iscsemi.cn isc RF Product , Transistor isc Websitewww.iscsemi.cn 2SC2570A 4 INCHANGE Semiconductor isc Silicon NPN RF Transistor S-PARAMETER VCE = 10 V, IC = 5 mA, ZO = 50 S-PARAMETER VCE = 10 V, IC = 20 mA, ZO = 50 INCHANGE Semiconductor
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RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise RF TRANSISTOR 1.5 GHZ s-parameter RF POWER TRANSISTOR NPN RF Transistor s-parameter vhf low-noise amplifier 10GHZ
Abstract: SILICON RF TRANSISTOR S-PARAMETER S-PARAMETER S-PARAMETER 1VCE=5VIC=5mA Freq. S11 S21 S12 , FC4901 NPN SILICON RF TRANSISTOR FC4901 NPN SOT-323 VHFUHF :S212 13dB , - 1 - FC4901 NPN SILICON RF TRANSISTOR (TA=25) V 15 IC , 0.25 - 2 - FC4901 NPN SILICON RF TRANSISTOR (TA=25) LASERON MICRO ELECTRONIC CO., LTD - 3 - FC4901 NPN SILICON RF TRANSISTOR SMITH VCE=5VIC=20mA, Zo=50 S21-FREQUENCY Laseron Micro Electronic
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transistor c 2316 Transistor s-parameter transistor 9747 transistor 5457 s-parameter s11 s12 s21 6558 YK50-100 S22-FREQUENCY S12-FREQU
Abstract: measurement is performed on matching transistor pairs from a 0.35Pm RF BiCMOS process [4]. The fT peaks of , RF BiCMOS process. The proposed model fits the mismatch characteristics of the key AC parameters , specifically designed for RF applications, the widths of the transistors are limited to a few discrete values , '" Bipolar modeling, mismatch modeling, RF circuit design. I. INTRODUCTION Fast commoditization of , , generating balanced IQ signals at RF is a typical challenge in the realization of such a direct conversion Skyworks Solutions
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170GH 40PA/P 200PA/P
Abstract: ignored because they are so small. Distributed models are needed at RF frequencies and higher to , circuited. This can be hard to do, especially at RF frequencies where lead inductance and capacitance make , stub shunting the input or output may cause a transistor to oscillate, making the measurement invalid , parameters relationship to optics Impedance mismatches between successive elements in an RF circuit , the Smith Chart. Click over image to animate. Showing transformations graphically To ease his RF Hewlett-Packard
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Abstract: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 , isc Silicon NPN RF Transistor 2SC3355 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise , 1.0 3.0 pF dB INCHANGE Semiconductor isc Silicon NPN RF Transistor isc , Semiconductor isc Silicon NPN RF Transistor 2SC3355 S-PARAMETER VCE = 10 V, IC = 20 mA, ZO = 50 f , Semiconductor isc Silicon NPN RF Transistor 2SC3355 VCE = 10 V, IC = 40 mA, ZO = 50 f (MHz) S11 INCHANGE Semiconductor
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3094 transistor transistor s11 s12 s21 s22 transistor k 0247 634 transistor 647 transistor transistor 647
Abstract: RF figures of merit reported to date for any SiC bipolar transistor. The calculated maximum , SiC bipolar transistor. 50 um Fig. 2. Micrographs of a 4-finger RF BJT with , the following formulae [14, 15]: 25 Fig. 3. I-V characteristics of a 4-finger RF transistor. IB , provisions of the copyright laws protecting it. First Demonstration of 4H-SiC RF Bipolar Junction , , University of Colorado, Boulder, CO 80309, USA 2 Abstract - 4H-SiC RF BJTs on a semi-insulating (>105 -
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SiC BJT Transistor BC 457 bipolar transistor ghz s-parameter 4h sic rf POWER BJTs RF transistors with s-parameters
Abstract: RF losses in the output transistor and therefore increases the power added efficiency (PAE). The , depicted results are the impedances seen by the output transistor for optimum RF power and power added , transistor structures. All necessary circuitry for proper operation of RF power cells (band gap, biasing , circuit board. The upper layer contains the RF lines and most DC connections. The internal layers are , . The RF lines for the LNA and PA input and output are 50 W lines with a width of 1 mm and a spacing of Atmel
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T7024 QFN20 4549C
Abstract: Preliminary 10W Power Transistor RT240PD Product Features Application · High Output , RF Sub-Systems · Base Station · Converter · IMT-2000 · ISM · MMDS · Wi-Fi, Wi-max , ) All specifications may change without notice. www.rfhic.com Preliminary 10W Power Transistor , + + Z5 R2 - Z6 RT240PD RF OUT RF IN Z1 C1 Z3 Z2 R1 Z7 Z4 , Transistor RT240PD Test Circuit Board All specifications may change without notice. www.rfhic.com RFHIC
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transistor z9 transistor Z2 cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 900MH IS-95 K045101
Abstract: been changed. The depicted results are the impedances seen by the output transistor for optimum RF , transistor structures. · All necessary circuitry for proper operation of RF power cells (band gap , circuit board. The upper layer contains the RF lines and most DC connections. The internal layers are , . The RF lines for the LNA and PA inputs as well as outputs are 50 lines and a width of 1 mm and a , upper layer contains the RF lines and most DC connections. The internal layers are used for ground Atmel
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4549D dc to 3 ghz lna application circuits 300 ohm 2 ghz Antenna atmel 811 J103 transistor top view schematics for a PA amplifier
Abstract: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II , Transistor Structure . A. What is a , GaAs Bipolar or Silicon Transistor? . , . FET: Field Effect Transistor. A type of transistor in which the current is controlled by the application of a varying electric field. V. VI. VII. 2 GaAs FET: A field effect transistor made Hewlett-Packard
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ATP-1054 high frequency transistor ga as fet bipolar transistor s-parameter high power FET transistor s-parameters 5963-2025E 5966-0779E
Abstract: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II , . Transistor Structure . , Microwave Performance . E. Why a GaAs FET Instead of a GaAs Bipolar or Silicon Transistor , . GaAs: Gallium Arsenide. A semiconductor compound. FET: Field Effect Transistor. A type of transistor , : A field effect transistor made from gallium arsenide. Source, Drain and Gate: The three basic Agilent Technologies
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DC bias of gaas FET NF50 vacuum tube amplifier
Abstract: shorting of the second harmonic reduces RF losses in the output transistor and therefore increases the , seen by the output transistor for optimum RF power and power added efficiency. Frequency , designed for operation in TDMA systems like Bluetooth, DECT, IEE 802.11 FHSS WLAN, home RF and ISM , layers are used. The layer on the top side contains the RF lines and the DC connections. The internal layers are used for ground connections. The RF lines for the PA input and output are 50 ohm lines with Atmel
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T7023 HP-VFQFP-N16 RF MODULE CIRCUIT DIAGRAM dect
Abstract: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c , webpage at http://www.infineon.com BGB420 Active Biased Transistor BGB420 Features · For high , technology Bias,4 C,3 Description SIEGET®-25 NPN Transistor with integrated biasing for high gain , sheet 5 2001-08-10 BGB420 ID RBias Bias-T IBias Bias,4 VD RF Out IC C,3 Bias B,1 E,2 N.C. RF In Bias-T Fig. 2: Test Circuit for Electrical Characteristics Infineon Technologies
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BFP420 GPS05605 BR 8050 BFP420 application notes SOT343 marking 0 mmic 414 rf transistor CHIP T502 P t502 6 D-81541
Abstract: EPC8007 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Features: â , Compliant), Halogen Free Applications: â'¢ Ultra high speed DC-DC conversion â'¢ RF Envelope Tracking â , Page 1 EPC8007 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet DYNAMIC , www.epc-co.com COPYRIGHT 2013 Page 2 EPC8007 â'" Enhancement Mode Power Transistor Preliminary , EPC8007 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Figure 6: Figure 7 Efficient Power Conversion
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j731
Abstract: EPC8009 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Features: â , Compliant), Halogen Free Applications: â'¢ Ultra high speed DC-DC conversion â'¢ RF Envelope Tracking â , Page 1 EPC8009 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet DYNAMIC , www.epc-co.com COPYRIGHT 2013 Page 2 EPC8009 â'" Enhancement Mode Power Transistor Preliminary , EPC8009 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Figure 6: Figure 7 Efficient Power Conversion
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J1034
Abstract: Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . , Preliminary Active Biased Transistor BGB540 Features · For high gain low noise amplifiers · Ideal for , Description SIEGET®-45 NPN Transistor with integrated biasing for high gain low noise figure applications. IC , Bias-T RF Out RF In N.C. B,1 E,2 Bias-T Fig. 2: Test Circuit for Electrical , factor: 0.1) 2.7k 27k R2 Q2 R1 Q1 Q2 R1 R2 2 1 Transistor Chip Data T513 (Berkley-SPICE Infineon Technologies
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1741 transistor equivalent table BFP540 spice BGB540-Chip NPN marking MCs RF POWER TRANSISTOR NPN 3GHz 324E-09 BFP540
Abstract: EPC8008 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Features: â , Compliant), Halogen Free Applications: â'¢ Ultra high speed DC-DC conversion â'¢ RF Envelope Tracking â , Page 1 EPC8008 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet DYNAMIC , www.epc-co.com COPYRIGHT 2013 Page 2 EPC8008 â'" Enhancement Mode Power Transistor Preliminary , EPC8008 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Figure 6: Figure 7 Efficient Power Conversion
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Abstract: EPC8003 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Features: â , Compliant), Halogen Free Applications: â'¢ Ultra high speed DC-DC conversion â'¢ RF Envelope Tracking â , Page 1 EPC8003 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet DYNAMIC , www.epc-co.com COPYRIGHT 2013 Page 2 EPC8003 â'" Enhancement Mode Power Transistor Preliminary , EPC8003 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Figure 6: Figure 7 Efficient Power Conversion
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Abstract: EPC8005 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Features: â , Compliant), Halogen Free Applications: â'¢ Ultra high speed DC-DC conversion â'¢ RF Envelope Tracking â , Page 1 EPC8005 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet DYNAMIC , www.epc-co.com COPYRIGHT 2013 Page 2 EPC8005 â'" Enhancement Mode Power Transistor Preliminary , EPC8005 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Figure 6: Figure 7 Efficient Power Conversion
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Abstract: EPC8002 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Features: â , die form with solder bars Applications: â'¢ Ultra high speed DC-DC conversion â'¢ RF Envelope , www.epc-co.com COPYRIGHT 2013 Page 1 EPC8002 â'" Enhancement Mode Power Transistor Preliminary , Mode Power Transistor Preliminary Specification Sheet Figure 1: Figure 2: Figure 3: Figure 4 , COPYRIGHT 2013 Page 3 EPC8002 â'" Enhancement Mode Power Transistor Preliminary Specification Sheet Efficient Power Conversion
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