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RF Transistor s-parameter

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2570A 2SC2570A , 150 -65~150 Tstg Storage Temperature Range isc Websitewww.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2570A 2SC2570A ELECTRICAL , INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Websitewww.iscsemi.cn isc RF Product , Transistor isc Websitewww.iscsemi.cn 2SC2570A 2SC2570A 4 INCHANGE Semiconductor isc Silicon NPN RF ... INCHANGE Semiconductor
Original
datasheet

5 pages,
224.02 Kb

amplifier TRANSISTOR 12 GHZ NF TRANSISTOR RF POWER TRANSISTOR NPN vhf RF TRANSISTOR 2.5 GHZ transistor DB 12 RF POWER TRANSISTOR NPN RF TRANSISTOR RF TRANSISTOR 10 GHZ low noise 2sc2570 Transistor s-parameter TRANSISTOR 10GHZ low-noise amplifier 10GHZ RF Transistor s-parameter vhf s-parameter RF POWER TRANSISTOR NPN RF TRANSISTOR 1.5 GHZ 2SC2570A RF TRANSISTOR 10GHZ low noise RF TRANSISTOR 10GHZ RF Transistor s-parameter TEXT
datasheet frame
Abstract: measurement is performed on matching transistor pairs from a 0.35Pm RF BiCMOS process [4]. The fT peaks of , RF BiCMOS process. The proposed model fits the mismatch characteristics of the key AC parameters , specifically designed for RF applications, the widths of the transistors are limited to a few discrete values , €” Bipolar modeling, mismatch modeling, RF circuit design. I. INTRODUCTION Fast commoditization of , , generating balanced IQ signals at RF is a typical challenge in the realization of such a direct conversion ... Skyworks Solutions
Original
datasheet

4 pages,
301.4 Kb

TEXT
datasheet frame
Abstract: ignored because they are so small. Distributed models are needed at RF frequencies and higher to , circuited. This can be hard to do, especially at RF frequencies where lead inductance and capacitance make , stub shunting the input or output may cause a transistor to oscillate, making the measurement invalid , parameters relationship to optics Impedance mismatches between successive elements in an RF circuit , the Smith Chart. Click over image to animate. Showing transformations graphically To ease his RF ... Hewlett-Packard
Original
datasheet

79 pages,
1276.2 Kb

TEXT
datasheet frame
Abstract: FC4901 FC4901 NPN SILICON RF TRANSISTOR FC4901 FC4901 NPN SOT-323 VHFUHF :S212 13dB , - 1 - FC4901 FC4901 NPN SILICON RF TRANSISTOR (TA=25) V 15 IC , 0.25 - 2 - FC4901 FC4901 NPN SILICON RF TRANSISTOR (TA=25) LASERON MICRO ELECTRONIC CO., LTD - 3 - FC4901 FC4901 NPN SILICON RF TRANSISTOR SMITH VCE=5VIC=20mA, Zo=50 S21-FREQUENCY S21-FREQUENCY , SILICON RF TRANSISTOR S-PARAMETER S-PARAMETER S-PARAMETER 1VCE=5VIC=5mA Freq. S11 S21 S12 ... Laseron Micro Electronic
Original
datasheet

7 pages,
205.8 Kb

transistor c 4058 Transistor B C 458 TRANSISTOR 8053 IC 7587 d 1556 transistor FC4901 6558 s-parameter s11 s12 s21 transistor 5457 transistor 9747 Transistor s-parameter transistor c 2316 RF Transistor s-parameter TEXT
datasheet frame
Abstract: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 2SC3355 , isc Silicon NPN RF Transistor 2SC3355 2SC3355 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise , 1.0 3.0 pF dB INCHANGE Semiconductor isc Silicon NPN RF Transistor isc , Semiconductor isc Silicon NPN RF Transistor 2SC3355 2SC3355 S-PARAMETER VCE = 10 V, IC = 20 mA, ZO = 50 f , Semiconductor isc Silicon NPN RF Transistor 2SC3355 2SC3355 VCE = 10 V, IC = 40 mA, ZO = 50 f (MHz) S11 ... INCHANGE Semiconductor
Original
datasheet

6 pages,
271.5 Kb

transistor 1892 RF TRANSISTOR 10GHZ low noise 772 transistor TRANSISTOR 10GHZ 7217 transistor 3094 npn RF TRANSISTOR 10GHZ s-parameter RF POWER TRANSISTOR NPN s-parameter s11 s12 s21 Transistor 2sc3355 NPN transistor mhz s-parameter 7338 transistor transistor 647 RF Transistor s-parameter 647 transistor 634 transistor transistor k 0247 transistor s11 s12 s21 s22 2Sc3355 3094 transistor TEXT
datasheet frame
Abstract: RF figures of merit reported to date for any SiC bipolar transistor. The calculated maximum , SiC bipolar transistor. 50 um Fig. 2. Micrographs of a 4-finger RF BJT with , the following formulae [14, 15]: 25 Fig. 3. I-V characteristics of a 4-finger RF transistor. IB , provisions of the copyright laws protecting it. First Demonstration of 4H-SiC RF Bipolar Junction , , University of Colorado, Boulder, CO 80309, USA 2 Abstract - 4H-SiC RF BJTs on a semi-insulating (>105 ... Original
datasheet

5 pages,
251.32 Kb

POWER BJTs bc 457 Transistor s-parameter RF POWER TRANSISTOR NPN BJT with i-v characteristics common emitter bjt Bipolar Junction Transistor powersi RF Bipolar Transistor bipolar transistor s-parameter NPN transistor mhz s-parameter RF Transistor s-parameter RF transistors with s-parameters rf POWER BJTs 4h sic bipolar transistor ghz s-parameter Transistor BC 457 SiC BJT TEXT
datasheet frame
Abstract: RF losses in the output transistor and therefore increases the power added efficiency (PAE). The , depicted results are the impedances seen by the output transistor for optimum RF power and power added , transistor structures. All necessary circuitry for proper operation of RF power cells (band gap, biasing , circuit board. The upper layer contains the RF lines and most DC connections. The internal layers are , . The RF lines for the LNA and PA input and output are 50 W lines with a width of 1 mm and a spacing of ... Atmel
Original
datasheet

20 pages,
1126.25 Kb

T7024 TEXT
datasheet frame
Abstract: Preliminary 10W Power Transistor RT240PD RT240PD Product Features Application · High Output , RF Sub-Systems · Base Station · Converter · IMT-2000 IMT-2000 · ISM · MMDS · Wi-Fi, Wi-max , ) All specifications may change without notice. www.rfhic.com Preliminary 10W Power Transistor , + + Z5 R2 - Z6 RT240PD RT240PD RF OUT RF IN Z1 C1 Z3 Z2 R1 Z7 Z4 , Transistor RT240PD RT240PD Test Circuit Board All specifications may change without notice. www.rfhic.com ... RFHIC
Original
datasheet

10 pages,
629.08 Kb

RT240PD Gan transistor transistor c5 transistor tc 144 TRANSISTOR Z10 era-4 transistor z4 j RF Transistor s-parameter transistor 1608 z3 transistor Z7 transistor gsm wcdma repeater 1608 B 100NF RT240 RT240PD transistor z5 RT240PD B 1449 transistor RT240PD TRANSISTOR Z4 RT240PD cdma repeater circuit RT240PD RT240PD RT240PD transistor Z2 transistor z9 TEXT
datasheet frame
Abstract: been changed. The depicted results are the impedances seen by the output transistor for optimum RF , transistor structures. · All necessary circuitry for proper operation of RF power cells (band gap , circuit board. The upper layer contains the RF lines and most DC connections. The internal layers are , . The RF lines for the LNA and PA inputs as well as outputs are 50 lines and a width of 1 mm and a , upper layer contains the RF lines and most DC connections. The internal layers are used for ground ... Atmel
Original
datasheet

18 pages,
1151.3 Kb

short distance rf tx ic schematics for a PA amplifier QFN20 J103 transistor top view 4549D atmel 811 T7024 300 ohm 2 ghz Antenna bipolar transistor ghz s-parameter dc to 3 ghz lna application circuits TEXT
datasheet frame
Abstract: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II , Transistor Structure . A. What is a , GaAs Bipolar or Silicon Transistor? . , . FET: Field Effect Transistor. A type of transistor in which the current is controlled by the application of a varying electric field. V. VI. VII. 2 GaAs FET: A field effect transistor made ... Hewlett-Packard
Original
datasheet

12 pages,
86.16 Kb

Transistor s-parameter high power FET transistor s-parameters bipolar transistor s-parameter high frequency transistor ga as fet ATP-1054 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
Product Folder:TRF7003 TRF7003, SILICON RFMOS DISCRETE TRANSISTOR >> Semiconductor Home > Products > Analog & Mixed-Signal > RF > Cellular / PCS > TRF7003 TRF7003, SILICON RFMOS DISCRETE TRANSISTOR Device Status: Active >  Description is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET) manufactured using the PACKAGES USING JEDEC PCB DESIGNS   (SZZA017A SZZA017A) THERMAL CONSIDERATIONS FOR RF POWER AMPLIFER DEVICES
/datasheets/files/texas-instruments/data/wwwti~1.com/sc/docs/products/analog/trf700~1.htm
Texas Instruments 28/01/2000 14.44 Kb HTM trf700~1.htm
Product Folder:TRF7003 TRF7003, SILICON RFMOS DISCRETE TRANSISTOR >> Semiconductor Home > Products > Analog & Mixed-Signal > RF > Cellular / PCS > TRF7003 TRF7003, SILICON RFMOS DISCRETE TRANSISTOR Device Status: Active >  Description is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET) manufactured using the PACKAGES USING JEDEC PCB DESIGNS   (SZZA017A SZZA017A) THERMAL CONSIDERATIONS FOR RF POWER AMPLIFER DEVICES
/datasheets/files/texas-instruments/data/www.ti.com/sc/docs/products/analog/trf7003.html
Texas Instruments 29/01/2000 14.44 Kb HTML trf7003.html
Super Wide-band RF Choke Super Wide-band RF Choke Purpose of the Product Use of Heterojunction Bipolar Transistor technology has resulted in development amplifiers cover a bandwidth from DC to 8 GHz. They need biasing current injected at the RF output port. As the RF and DC share this port, an inadequately designed DC biasing circuit will degrade the RF performance. It is commonly recommended to use a resistor and RF choke in series with the DC supply. The
/datasheets/files/mini-circuits/html/rfc_apn.htm
Mini-Circuits 18/02/2002 11.16 Kb HTM rfc_apn.htm
HFA3046 HFA3046, HFA3096 HFA3096, HFA3127 HFA3127, HFA3128 HFA3128 Transistor Arrays RF Up/Down Conversion Is Simplified By Linear Transistor Arrays   Datasheet & Related Docs    Description    Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation's complementary transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides illustrating the use of these devices as RF amplifiers. For more information, visit our website at
/datasheets/files/intersil/device_pages/device_hfa3127.html
Intersil 07/09/2006 32.34 Kb HTML device_hfa3127.html
HFA3046 HFA3046, HFA3096 HFA3096, HFA3127 HFA3127, HFA3128 HFA3128 Transistor Arrays RF Up/Down Conversion Is Simplified By Linear Transistor Arrays   Datasheet & Related Docs    Description    Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation's complementary transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides illustrating the use of these devices as RF amplifiers. For more information, visit our website at
/datasheets/files/intersil/device_pages/device_hfa3128.html
Intersil 07/09/2006 32.08 Kb HTML device_hfa3128.html
HFA3046 HFA3046, HFA3096 HFA3096, HFA3127 HFA3127, HFA3128 HFA3128 Transistor Arrays RF Up/Down Conversion Is Simplified By Linear Transistor Arrays   Datasheet & Related Docs    Description    Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation's complementary transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides illustrating the use of these devices as RF amplifiers. For more information, visit our website at
/datasheets/files/intersil/device_pages/device_hfa3096.html
Intersil 07/09/2006 29.69 Kb HTML device_hfa3096.html
No abstract text available
/download/32796902-145429ZC/bgc405.zip ()
Infineon 08/09/2000 29.79 Kb ZIP bgc405.zip
characterization, transistor development, model verification and LNA design. available in three frequency bands: 300MHz to 6 GHz for RF Communications applications; 2-26.5 GHz for Technology   Microwave, Communications Test, Wireless, RF
/datasheets/files/hewlett-packard/apps/cpcat/prodpages/np5bnpts.htm
Hewlett-Packard 18/12/1997 7.05 Kb HTM np5bnpts.htm
HFA3046 HFA3046, HFA3096 HFA3096, HFA3127 HFA3127, HFA3128 HFA3128 Transistor Arrays RF Up/Down Conversion Is Simplified By Linear Transistor Arrays   Datasheet & Related Docs    Description    Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation's complementary transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides illustrating the use of these devices as RF amplifiers. For more information, visit our website at
/datasheets/files/intersil/device_pages/device_hfa3046.html
Intersil 07/09/2006 29.65 Kb HTML device_hfa3046.html
Models Spice and S-parameter Device models and parameters Field Effect Transistors models PowerMOS Transistors models RF Wideband Transistors models Schottky Barrier Diodes models Small Signal Transistor models Diodes models MMICs models Varicap models
/datasheets/files/philips/models/index-v2.html
Philips 14/06/2005 1.14 Kb HTML index-v2.html