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DUALOUTPUT-ISOFLYBACK-REF Texas Instruments Dual Output Isolated Flyback Design: 5V @ 0.2A, 12V @ 2.1A w/2 addl out 3.3V @ 0.5A, 5V @ 0.5A
TVP5021DUAL Texas Instruments NTSC/PAL Digital Video Decoder 80-HTQFP
RF-HDT-SJLS-G1 Texas Instruments
RF-HDT-SNLE-G1 Texas Instruments TAG-IT(TM) HF-I STANDARD TRANSPONDER CHIP (WAFER, INKED, GRIND, SAWN ON TAPE)
RF-HDT-WNMC-M0 Texas Instruments Tag-it(TM) HF-I Plus Transponder Chip (Wafer, unprocessed) 0-WAFERSALE
RF-HDT-AJLC-G0 Texas Instruments

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RF TRANSISTOR 1.5 GHZ dual gate

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: System Efficiency P 2 BFG325W/XR 14 GHz NPN wideband transistor Vout = 1.2V Vout = 0.8V 100 , Further information: 14 GHz NPN wideband transistor Key features Philips BFG325W/XR is a 14 GHz NPN silicon planar epitaxial transistor housed in a 4-pin dual-emitter SOT343R (CMPAK-4) plastic package. Designed for RF front end applications in the GHz range, it , receiver DH (TSSOP20) 74LVC1G32 3.3 V single 2-input OR gate GM (MicroPak) SA601 1 GHz Philips Semiconductors
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PIP212-12M BCM847BS BCM857BS P89LPC9102 Transistor SMD SOT363 SC70 Transistor SMD SOT363 SC70 SC88 TRANSISTOR SMD CODE PACKAGE SOT363 DMX DECODER IC SOT343R reset transistor SOT363 PBLS15 PBLS40
Abstract: , Mobile Satcom & GPS Systems - 1.5­2 GHz MONOLITHIC INTEGRATED CIRCUITS (continued) RF , Transistor Dual GP NPN Transistor Dual GP PNP Transistor Dual GP PNP Transistor Dual Schottky Barrier , Diode Dual Schottky Barrier Diode Dual UHF/VHF Transistor Dual UHF/VHF Transistor Dual UHF/VHF Transistor Dual N­Channel J­FET Dual N­Channel J­FET Dual N­Channel J­FET P­Channel Low Threshold Low RDS , comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low Motorola
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TRANSISTOR MOTOROLA MAC 223 MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit
Abstract: with RF drive level, the series gate resistance should be kept small to minimize its pinchoff effect , f, GHz TYPICAL RF PERFORMANCE (room temperature) P1dB, OIP3, Input RL, Output Gain, dB dBm , 1.92 f, GHz f, GHz 1.880 1.960 2.040 f, GHz TYPICAL RF PERFORMANCE (room temperature , stability. It has been assumed that the backside layer has no effect on the RF performance or circuit , same fixed gate voltage for all devices. Active bias circuitry is strongly recommended, as it will Sirenza Microdevices
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SPF-3143 MCH185A150JK MCH182CN104KK MCH185A8R2DK LL1608-FS5N6S SPF-3043 SPF 188 3143 AN066 AN-066 EAN-103928
Abstract: to its ability to limit gate current under RF drive compression. A graph of gate current vs RF , RF drive level is beginning to self bias the gate to source junction increasing the gate current to , dual PNP transistor is used in the regulator. Q2b is wired solely as a diode to offset the VBE changes , that produces the voltage required to force the desired drain voltage VDS. The dual PNP transistor , gate current when the device is subjected to high RF drive levels. C7 provides a low frequency bypass Avago Technologies
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VMMK-1225 phemt biasing ATF-36077 k 1225 1000u ATF-36077 VMMK-1218 AV02-1098EN
Abstract: RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description , Lowell Street Andover, MA 01810 RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC , 01810 RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION , assembly. (2) Use 3-1 mil gold wires about 25 mils in length for optimum RF performance. (3) Vg: Gate , Chip RF IN RF OUT L Ground 100pF (Back of Chip) L Bond Wire Ls 10,000pF Gate Supply Raytheon RF Components
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CuMoCu
Abstract: (GHz) Dual Gate FETs VHF Band (f=200 MHz) Dual Gate FET NF-Gps MAP 2.5 Noise Figure NF (dB , .6 Dual Gate FETS , .13 Dual Gate MOS FETs .14 Dual Gate GaAs FETs , .20 Dual Gate MOS FETs NEC
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UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G gaas fet T79 pc1658 D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925
Abstract: original data from which it was extracted. Die Model - Gate Width = 600 um, Optimized for 0.1 GHz to , 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS October 2007 - Rev 22 , Pseudomorphic High Electron Mobility Transistor (pHEMT) High Gain: 25 dB @ 900 MHz 21 dB @ 1900 MHz Low Noise Figure: 0.6 dB @ 900 MHz 0.7 dB @ 1900 MHz 17 dBm P1dB at 2 GHz 33 dBm OIP3 at 2 GHz 600um Gate Width: 50 Output Impedance Excellent Uniformity Ultra Compact Surface-Mount QFN Package 10 Year Mimix Broadband
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CDQ0303-QS-0G00 CDQ0303-QS-0G0T PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 MCH185A101JK
Abstract: circuit as the previously mentioned dual source type, the gate voltage is selected independently of RS , . Therefore, a positive and negative dual power source should be used to bias the drain and gate separately , receivers, and then in transmitters. Progress in bipolar transistor technology and the production of new , feasible gallium arsenide field effect transistor (GaAs FET) appeared, and the uses of this device are , EFFECT TRANSISTOR (FET) In 1952, Shockley conceived the structure of the field effect type transistor California Eastern Laboratories
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NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 ne8002 SK3448 AN82901-1 NE800898-7H NE868898-6 MW77-21 MTT-22 ED-21
Abstract: previously mentioned dual source type, the gate voltage is selected independently of RS and ID. Thus, it is , positive and negative dual power source should be used to bias the drain and gate separately. For a GaAs , receivers, and then in transmitters. Progress in bipolar transistor technology and the production of new , feasible gallium arsenide field effect transistor (GaAs FET) appeared, and the uses of this device are , EFFECT TRANSISTOR (FET) In 1952, Shockley conceived the structure of the field effect type transistor California Eastern Laboratories
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NE72089 universal jfet biasing curve graph gunn diode ghz s-parameter mw7721 ne800495-6 NE800495-4
Abstract: . Thus the transistor emitter voltage adjusts the voltage incident at the gate of the FET so that the , for operation. A Rohm dual transistor, UMT1N, and a dual chip resistor (8.2 k) are recommended to , The Communications Edge TM Application Note Product Information 5.25 GHz AP4 Application , application note details the performance of the AP4 optimized for the 5.15 ­ 5.35 GHz frequency band to , 5.15 ­ 5.35 GHz 5.25 GHz 10.3 dB -11.0 dB -12.7 dB -20.0 dB 28.7 dBm 42 dBm +8.0 V @ 150 mA WJ Communications
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wifi 5 watt amplifier circuit wifi schematic wifi amplifier circuit 120 ap4 resistor 8.2 k wifi 2 watt amplifier circuit 1-800-WJ1-4401
Abstract: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24 , Pseudomorphic High Electron Mobility Transistor (pHEMT) High Gain: 25 dB @ 900 MHz 21 dB @ 1900 MHz Low Noise Figure: 0.6 dB @ 900 MHz 0.7 dB @ 1900 MHz 17 dBm P1dB at 2 GHz 33 dBm OIP3 at 2 GHz 600Âum Gate Width: 50 Output Impedance Excellent Uniformity Ultra Compact Surface-Mount QFN Package 10 Year , MHz 1900 MHz 2400 MHz Units The CDQ0303-QS is a dual, ultra low-noise amplifier combining high Mimix Broadband
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CXX1234-XX-0L0T
Abstract: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24 , Pseudomorphic High Electron Mobility Transistor (pHEMT) High Gain: 25 dB @ 900 MHz 21 dB @ 1900 MHz Low Noise Figure: 0.6 dB @ 900 MHz 0.7 dB @ 1900 MHz 17 dBm P1dB at 2 GHz 33 dBm OIP3 at 2 GHz 600um Gate Width: 50 Output Impedance Excellent Uniformity Ultra Compact Surface-Mount QFN Package 10 Year , MHz 1900 MHz 2400 MHz Units The CDQ0303-QS is a dual, ultra low-noise amplifier combining high Mimix Broadband
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celeritek LNA 17341 RF transistors with s-parameters QFN-4x4 PARKER S11 microwave transducer
Abstract: respect to its ability to limit gate current under RF drive compression. A graph of gate current vs RF , increased to +10dBm, the gate to source junction is starting to conduct even harder because the RF drive , general purpose dual PNP transistor is used in the regulator. Q2b is wired solely as a diode to offset , . The dual PNP transistor provides both regulation and temperature compensation. Equations (3) and (4 , 2. Gate current vs RF drive Level for the VMMK-1218 R5 L1 R7 200 100 C6 C1 250 Avago Technologies
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AV02-1202EN avago VMMK application note phemt .s2p
Abstract: APPLICATIONS The D-2704 is a Gallium Arsenide (GaAs) n-channel Dual Gate Field Effect Transistor (FED utilizing a 0.5 micron long Schottky-barrier gate. The device offers low noise figure and high associated , LITTON IND/LITTON SOLID Linon SbE D â  5S4M200 DG0DS12 553 « L I T T Dual Gate , 8 GHz â  Noise Figure 2 .5 dB @ 8 Ghz â  Gain at NF 13 dB @ 8 Ghz â  Mixer, Switch, AGC, and Temperature Compinsation Applications â  0 .5 x 340nm Ti/Pt/Au Gate Chip -
OCR Scan
TRANSISTOR A107 MIL-STD-19500 MIL-STD-750 2285C
Abstract: Max Unit 18.0 GHz dB dBm dBm % dB dB Parameter Min Gate Voltage (VG) Gain vs , RF Components 362 Lowell Street Andover, MA 01810 RMPA61800 Dual-Channel 6-18 GHz 2 Watt Power , RMPA61800 Dual-Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Raytheon RF Components
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25 uF capacitor RAYTHEON ME207XB
Abstract: Transistor) device whose nominal 0.3 micron gate length and 900 micron gate width make it ideally suited to , Time 102210 mA 12 GHz PARAMETER Rd Cgs GATE 12 GHz -12.0 55 Cgd Rg , . MwT-H16 32 GHz High Power AlGaAs/InGaAs PHEMT MwT-H16 DUAL BIAS Output Reference Plane MwT-H16 , MwT-H16 32 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 , 35 50 · 28 dBm POWER OUTPUT AT 12 GHz · 11 dB GAIN AT 12 GHz · 0.3 MICRON REFRACTORY METAL Microwave Technology
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High Power Microwave Device SOLAR TRANSISTOR T-H16 FPH16
Abstract: MwT-H16 28 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 75 241 72 FEATURES · 28 dBm POWER OUTPUT AT 12 GHz · 11 dB GAIN AT 12 GHz · 0.3 MICRON REFRACTORY METAL/GOLD GATE · 900 MICRON GATE WIDTH 50 35 52 35 52 35 52 35 1067 52 35 , is an AlGaAs/InGaAs heterojunction PHEMT (Pseudomorphic-High-Electron-Mobility Transistor) device whose nominal 0.3 micron gate length and 900 micron gate width make it ideally suited to applications Microwave Technology
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Abstract: GND 22 21 GND 20 GND 19 DRAIN / RF OUT 18 GND 17 GND 16 GND 15 GND Function Gate / RF Input Drain , temperature. A Rohm dual transistor - UMT1N - is recommended for cost, minimal board space requirements, and , Advanced Product Information Outline Drawing Functional Pin Layout Pin 3 19 FUNCTION Gate / RF Input , MTTF of a minimum of 100 years at a mounting temperature of 85° C. All devices are 100% RF & DC tested , performance and high efficiency are required. Functional Diagram GND GND GND GND GND 28 GND 1 GND 2 GATE WJ Communications
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FP31QF JESD22-A114 JESD22-C101 J-STD-020A
Abstract: for a PA versus gate control. The RF output dBm voltage/Vramp transfer function is linear for , Subscriber Group, RF Semiconductor Division. Motorola Semiconductor S. A. In the 4.8 V application, the , ON­state for the selected path and the drive levels for an optional RF power switch. Together, these components form a complete system solution for a dual band power amplifier function. A block diagram of the , note describes the realization and performances of a dual band power amplifier for GSM at 900 and Motorola
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AN1602 MRFIC0913 MRFIC1818 DCS1800 MC33169 MMSF4N01HD MRFIC1817 GSM ic AN1602/D GSM/DCS1800
Abstract: Noise LDO Audio Amp Driver Audio Amp RF Power Amplifier Driver - Dual RF Power Amplifier Driver - , Noise LDO Audio Amp Driver Audio Amp RF Power Amplifier Driver - Dual RF Power Amplifier Driver - , Noise LDO Audio Amp Driver Audio Amp RF Power Amplifier Driver - Dual RF Power Amplifier Driver - , Noise LDO Audio Amp Driver Audio Amp RF Power Amplifier Driver - Dual RF Power Amplifier Driver - , Controllers Device CS5323 NCP5332A POWER MANAGEMENT SOLUTIONS ANALOG (cont.) Gate Drive External ON Semiconductor
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NCP1204 NCP1450 NCP1570 NCP1571 bipolar power transistor data SO32W NCP4000 dual zener common anode SGD503/D SO-20W SO-28W NCP1203 NCP1205
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