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RF-HDT-AJLS-G1 Texas Instruments RF-HDT-AJLS Tag-it(TM) HF-I Pro Transponder Chip (Wafer, bumped, inked, grind, sawn on tape) ri Buy
RF-HDT-AJLE-G1 Texas Instruments RF-HDT-AJLE Tag-it(TM) HF-I Standard Transponder Chip (Wafer, bumped, inked, grind, sawn on tape) ri Buy
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RF TRANSISTOR 1.5 GHZ dual gate

Catalog Datasheet Results Type PDF Document Tags
Abstract: RMPA61800 RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description , Lowell Street Andover, MA 01810 RMPA61800 RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC , 01810 RMPA61800 RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION , assembly. (2) Use 3-1 mil gold wires about 25 mils in length for optimum RF performance. (3) Vg: Gate , Chip RF IN RF OUT L Ground 100pF (Back of Chip) L Bond Wire Ls 10,000pF Gate Supply ... Original
datasheet

7 pages,
378.19 Kb

RMPA61800 CuMoCu RF TRANSISTOR 1.5 GHZ dual gate RMPA61800 abstract
datasheet frame
Abstract: Output Return Loss Gate Voltage (VQ ) Min 6.0 15 28 30 12 Typ 18 31 32 22 9.5 7.4 -0.4 Max , Raytheon Electronics RMPA61800 RMPA61800 Dual-Channel 6-18 GHz 2W MMIC Power Amplifier Description The Raytheon RMPA61800 RMPA61800 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor (PHEMT) process to , Compression,Dual Channel 22% Typical Power Added Efficiency at 1 dB Gain Compression Chip size: 6.55 mm x 5.15 ... OCR Scan
datasheet

2 pages,
249.95 Kb

RF TRANSISTOR 1.5 GHZ dual gate RMPA61800 RMPA61800 abstract
datasheet frame
Abstract: Output Power at Max Efficiency Compression Point = 1.5 dB VDS= 6.0 V IDS= 190mA 12 GHz 12 GHz 12 GHz , MwT-H16 28 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 75 241 72 FEATURES · 28 dBm POWER OUTPUT AT 12 GHz · 11 dB GAIN AT 12 GHz · 0.3 MICRON REFRACTORY METAL/GOLD GATE · 900 MICRON GATE WIDTH 50 35 52 35 52 35 52 35 1067 52 35 , is an AlGaAs/InGaAs heterojunction PHEMT (Pseudomorphic-High-Electron-Mobility Transistor) device ... Original
datasheet

2 pages,
119.98 Kb

datasheet abstract
datasheet frame
Abstract: Transistor) device whose nominal 0.3 micron gate length and 900 micron gate width make it ideally suited to , Optimum P1dB Output Power at Max Efficiency Compression Point = 1.5 dB VDS= 6.0 V IDS= 190mA Cpd , Time 102210 mA 12 GHz PARAMETER Rd Cgs GATE 12 GHz -12.0 55 Cgd Rg , Gate-to-Source Breakdown Volt. Igs= -1.5 mA Gate-to-Drain Breakdown Volt. Igd= -1.5 mA IDSS RF , MwT-H16 32 GHz High Power AlGaAs/InGaAs PHEMT MwT-H16 DUAL BIAS Output Reference Plane MwT-H16 ... Original
datasheet

2 pages,
112.71 Kb

SOLAR TRANSISTOR High Power Microwave Device datasheet abstract
datasheet frame
Abstract: transistors. Thus the transistor emitter voltage adjusts the voltage incident at the gate of the FET so that , needed for operation. A Rohm dual transistor, UMT1N, and a dual chip resistor (8.2 k) are recommended to , The Communications Edge TM Application Note Product Information 5.25 GHz AP4 Application , application note details the performance of the AP4 optimized for the 5.15 ­ 5.35 GHz frequency band to , 5.15 ­ 5.35 GHz 5.25 GHz 10.3 dB -11.0 dB -12.7 dB -20.0 dB 28.7 dBm 42 dBm +8.0 V @ 150 mA ... Original
datasheet

3 pages,
201.2 Kb

wifi 2 watt amplifier circuit resistor 8.2 k 120 ap4 wifi amplifier circuit RF TRANSISTOR 1.5 GHZ dual gate wifi schematic wifi 5 watt amplifier circuit datasheet abstract
datasheet frame
Abstract: 6.5 200 mil BeO disk Notes: 1. Typical at 900 MHz 2. Dual transistor - All data is per individual transistor. 3. Typical G1 dB at 2 GHz Gallium Arsenide (GaAs) Field Effect Transistors (FETs , Gate Width (µm) Frequency Range (GHz) Test Freq. (GHz) Vdd (V) I dd (mA) NFo (dB , 135 1.1 1.8 1.4 1.5 0.6 15.5 14.6 14.8 17.0 20.0 45.3 47.0 41.7 42 38 +29.1 , 0.4 16.0 22 +12 SOT-343 (SC-70 SC-70) ATF-36077 ATF-36077 200 1.5 - 18 12 1.5 10 0.5 ... Original
datasheet

2 pages,
38.71 Kb

AT-32032 AT-32033 AT-32063 AT-41411 AT-31011 AT-30533 AT-30511 ATF-36163 ATF-54143 application notes LPCC phemt biasing ATF-36077 S21E SOT343 42 transistor atf datasheet abstract
datasheet frame
Abstract: System Efficiency P 2 BFG325W/XR BFG325W/XR 14 GHz NPN wideband transistor Vout = 1.2V Vout = 0.8V 100% , GHz NPN wideband transistor Key features Philips BFG325W/XR BFG325W/XR is a 14 GHz NPN silicon planar epitaxial transistor housed in a 4-pin dual-emitter SOT343R (CMPAK-4) plastic package. Designed for RF , trademark of Fairchild Semiconductor. Key features · · · · · Measure 1.5 x 1.0 x 0.5 mm 0.5 mm , ) PBLS1503V PBLS1503V 15 V, 500 mA PNP BISS Loadswitch SOT666 PMEM4020APD PMEM4020APD PNP transistor/Schottky rectifier ... Original
datasheet

8 pages,
173.93 Kb

PIP212-12M sod323 4pin SSOP20 transistor SMD DK rc smd transistor sot363 SC16C754B SC16C654B SC16C554B SA8027 SA601DK SOT363 flash BFG310W/XR RF SMD transistors pnp SOT343R reset datasheet abstract
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Abstract: (GHz) Figure 4. VMMK-1225 VMMK-1225 50 Gain vs Frequency for varying printed circuit board thickness 1.5 , respect to its ability to limit gate current under RF drive compression. A graph of gate current vs RF , RF drive level is beginning to self bias the gate to source junction increasing the gate current to , dual PNP transistor is used in the regulator. Q2b is wired solely as a diode to offset the VBE changes , that produces the voltage required to force the desired drain voltage VDS. The dual PNP transistor ... Original
datasheet

6 pages,
267.46 Kb

VMMK1225 VMMK-1218 ATF-36077 1000u VMMK-1225 k 1225 phemt biasing ATF-36077 VMMK-1225 abstract
datasheet frame
Abstract: 2 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) GHz single-pole four throw ( SP4T ) GaAs Fig. 1 The , 1.5 2 2.5 3 by previously available FREQUENCY (GHz) SP4Ts on the market. -20 -30 -40 -50 -60 0 0.5 Fax: 978-250-3373 1 1.5 2 FREQUENCY (GHz) 2.5 3 Web Site , gate current is -1 mA (typ). Table 1, the truth table, lists the A and B control voltages vs. the RF , MICROWAVE CORPORATION PRODUCT FEATURE HMC165S14 HMC165S14 SEPTEMBER 1999 MINIATURE DUAL CONTROL SP4T ... Original
datasheet

2 pages,
44.8 Kb

SP4T package SOIC14 HMC165S14 74HCT04 sp4t switch die antenna diversity switch HMC165S14 abstract
datasheet frame
Abstract: with RF drive level, the series gate resistance should be kept small to minimize its pinchoff effect , f, GHz f, GHz 1.880 1.960 2.040 f, GHz TYPICAL RF PERFORMANCE (room temperature) P1dB , assumed that the backside layer has no effect on the RF performance or circuit design. Design , voltage. Normal pinchoff variation from part-to-part may preclude the use of the same fixed gate voltage , pinchoff variation and provide temperature compensation. Most active bias circuits limit the transistor ... Original
datasheet

8 pages,
114.97 Kb

MCH182CN104KK AN066 LL1608-FS3N9S ML200C MCH185A150JK LL1608-FS4N7S LL1608-FS5N6S 3143 SPF 188 SPF-3143 SPF-3043 AN-066 AN-066 abstract
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BF1204 BF1204 BF1204 BF1204 - Dual N-channel dual gate MOS-FET BF199 BF199 BF199 BF199 - NPN medium frequency transistor wideband differential transistor BFG10 BFG10 BFG10 BFG10 - NPN 2 GHz RF power transistor BFG10/X BFG10/X BFG10/X BFG10/X - NPN 2 GHz RF power transistor BFG10W/X BFG10W/X BFG10W/X BFG10W/X - UHF power transistor BFG11 BFG11 BFG11 BFG11 - NPN 2 GHz RF power transistor BFG11/X BFG11/X BFG11/X BFG11/X - NPN 2 GHz RF power transistor BFG11W/X BFG11W/X BFG11W/X BFG11W/X - NPN transistor BFG97 BFG97 BFG97 BFG97 - NPN 5 GHz wideband transistor BFM505 BFM505 BFM505 BFM505 - Dual NPN wideband
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Philips 17/02/2002 443.53 Kb HTML 30928-v1.html
BF1101WR BF1101WR BF1101WR BF1101WR - N-channel dual-gate MOS-FETs BF1102 BF1102 BF1102 BF1102 - Dual N-channel dual gate MOS-FETs transistors BF901 BF901 BF901 BF901 - Silicon n-channel dual gate MOS-FETs BF901R BF901R BF901R BF901R - Silicon n-channel dual gate MOS-FETs BF904 BF904 BF904 BF904 - N-channel dual gate MOS-FETs BF904R BF904R BF904R BF904R - N-channel dual N-channel dual gate MOS-FETs BF909R BF909R BF909R BF909R - N-channel dual gate MOS-FETs BF909WR BF909WR BF909WR BF909WR - dual-gate MOS-FET BF992 BF992 BF992 BF992 - Silicon N-channel dual gate MOS-FET BF994S BF994S BF994S BF994S - N-channel
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consumption discretes (15) Low-side Switch (20) MOSFETS for RF preamplifier stages (35) Matched power darlington transistors (7) Multi-chip 25 - 300 V MOSFETs (12) N-channel dual gate MOSFETs transistors (55) Transistor wideband NPN up to 10 GHz (47) Transistor wideband NPN up to 25 GHz (5) Transistor wideband NPN up to 3.5 GHz (12) Transistor wideband NPN up to 45 GHz (2) Transistor wideband NPN up to 6 GHz (20) Transistor wideband NPN up to 8 GHz (11) Transistor wideband PNP up
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Philips 15/04/2003 50.23 Kb HTML 30928_i.html
PNP high-voltage transistor BF901 BF901 BF901 BF901 Silicon n-channel dual gate MOS-FETs BF901R BF901R BF901R BF901R BFE520 BFE520 BFE520 BFE520 NPN wideband differential transistor BFG10 BFG10 BFG10 BFG10 NPN 2 GHz RF power transistor BFG10/X BFG10/X BFG10/X BFG10/X NPN 2 GHz RF power transistor BFG10W/X BFG10W/X BFG10W/X BFG10W/X UHF power transistor BFG11 BFG11 BFG11 BFG11 NPN 2 GHz RF power transistor BFG11/X BFG11/X BFG11/X BFG11/X NPN 2 GHz RF power transistor BFG97 BFG97 BFG97 BFG97 NPN 5 GHz wideband transistor BFM505 BFM505 BFM505 BFM505 Dual NPN wideband transistor
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Philips 21/12/2000 824.32 Kb HTML 285.html
BFG10 BFG10 BFG10 BFG10 - NPN 2 GHz RF power transistor BFG10/X BFG10/X BFG10/X BFG10/X - NPN 2 GHz RF power transistor BF1102 BF1102 BF1102 BF1102 - Dual N-channel dual gate MOS-FETs BF1102R BF1102R BF1102R BF1102R - Dual N-channel dual gate MOS-FETs BF1203 BF1203 BF1203 BF1203 - Dual N-channel dual gate MOS-FET
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Philips 01/06/2005 587.72 Kb HTML 30928-v2.html
BFG10 BFG10 BFG10 BFG10 - NPN 2 GHz RF power transistor BFG10/X BFG10/X BFG10/X BFG10/X - NPN 2 GHz RF power transistor BFG11 BFG11 BFG11 BFG11 - NPN 2 GHz RF power transistor BFG11/X BFG11/X BFG11/X BFG11/X - NPN 2 GHz RF power transistor BF1102 BF1102 BF1102 BF1102 - Dual N-channel dual gate MOS-FETs
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BF1102 BF1102 BF1102 BF1102 - Dual N-channel dual gate MOS-FETs BF904 BF904 BF904 BF904 - N-channel dual gate MOS-FETs BF904R BF904R BF904R BF904R - N-channel dual gate MOS-FETs BF909 BF909 BF909 BF909 - N-channel dual gate MOS-FETs BF909R BF909R BF909R BF909R - N-channel dual gate MOS-FETs
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Philips 25/04/2003 646.65 Kb HTML 27117.html
NF(dB) 1.5 I s (mA) 4 Gain(dB) 19 @(GHz) 2.0 Category MMIC amplifiers and mixers BFG16A BFG16A BFG16A BFG16A VCEO max(V) 25 @ f1 500.0 POLARITY NPN G UM @ f1(dB) 10.0 f T (GHz) 1.5 P tot (MW NPN up to 3.5 GHz BFQ17 BFQ17 BFQ17 BFQ17 @ f1 200.0 f T (GHz) 1.5 f T / I C CURVE(SEE FIGURE MAX(dB) 2.4@f1 VCEO max(V) 15 Category Transistor wideband NPN up to 6 GHz @ f2(dB) 15 G UM @ f1(dB) 18.0 @ f(MHz) 500 Category Transistor wideband NPN up to 8 GHz
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N-Channel MOS-Fieldeffect Triode, Depletion Mode bf550 BF550/BF550R BF550/BF550R BF550/BF550R BF550/BF550R Silicon PNP RF Transistor bf569 BF569/BF569R BF569/BF569R BF569/BF569R BF569/BF569R Silicon PNP RF Transistor bf579 BF579/BF579R BF579/BF579R BF579/BF579R BF579/BF579R Silicon PNP RF Transistor cd_fax BF775 BF775 BF775 BF775 Silicon PNP RF Transistor bf961 BF961 BF961 BF961 BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode bf964 BF964S BF964S BF964S BF964S Transistor bf988 BF988 BF988 BF988 BF988 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode bf994 BF994S BF994S BF994S BF994S N-Channel BF998 BF998 BF998 BF998 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode cd_fax BFP181T BFP181T BFP181T BFP181T Silicon NPN Planar RF
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Temic 12/03/1997 67.32 Kb TXT allparts.txt
) 87c751 Specification For A Bus-Controlled Monitor 1.5 GHz Low Noise Amplifier with the BFG425W BFG425W BFG425W BFG425W 1.9 GHz low noise amplifier with the BFG425W BFG425W BFG425W BFG425W 10.8MHz FSK Decoder current Preamplifier for 1,9 GHz at 3V Low power single/dual frequency synthesizers Synthesizer UMA1015M UMA1015M UMA1015M UMA1015M low power dual 1 GHz frequency synthesizer UMA1021M UMA1021M UMA1021M UMA1021M Low 10H/10020EV8 10H/10020EV8 10H/10020EV8 10H/10020EV8 High-Speed (4.4ns) ECL PLD 15 W class-AB amplifier with the BLV2044 BLV2044 BLV2044 BLV2044 for
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