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Part Manufacturer Description Datasheet BUY
CS8952-CQZR Cirrus Logic Transmitters/Receivers/Transceivers IC 100BASE-TX and 10BASE-T Transceiver visit Digikey Buy
CS8952-IQZR Cirrus Logic Transmitters/Receivers/Transceivers IC 100BASE-TX and 10BASE-T Transceiver visit Digikey Buy
WM7121PIMSE/RV Cirrus Logic Consumer Circuit, CMOS, 3.76 X 2.95 MM, 1.10 MM HEIGHT, 1.70 MM PITCH, HALOGEN AND LEAD FREE, LGA-4 visit Digikey Buy
WM7236IMSE/RV Cirrus Logic Consumer Circuit, CMOS, 4 X 3 MM, 1 MM HEIGHT, 0.90 MM PITCH, HALOGEN AND LEAD FREE, LGA-5 visit Digikey Buy
WM7216IMSE/RV Cirrus Logic Consumer Circuit, CMOS, 4 X 3 MM, 1 MM HEIGHT, 0.85 MM PITCH, HALOGEN AND LEAD FREE, LGA-5 visit Digikey Buy
WM7132PIMSE/RV Cirrus Logic Consumer Circuit, CMOS, 3.76 X 3 MM, 1.10 MM HEIGHT, 0.97 MM PITCH, HALOGEN AND LEAD FREE, LGA-6 visit Digikey Buy

RF+TRANSISTOR+1.5+GHZ+dual+gate

Catalog Datasheet MFG & Type PDF Document Tags

MRF629

Abstract: MRF227 N O r O R O L A SC -CDI0DES/0PT03- 34 DËIb3b7aSS DG3flQbb 0 1 6 3 6 7 2 5 5 M O T O R O L A SC (DIODES/OPTO) 34C 3 8 0 6 6 ? 05" D SILICON RFTRANSISTOR DICE (continued) DIE NO. - NPN LINE SOURCE - RF605.450 This die provides performance equal to or better than that of the following device types: 2N5944 MRF227 MRF629 2C5944 Designed for 7.0 to 15 volts UHF power , = 15 Vdc, VB E = 0 (Tc = 55°C) lc = 100 mAdc, VC E = 5.0 Vdc Min 16 36 4.0 - 20 Max - - -
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OCR Scan

2N5841

Abstract: 2n5842 current-mode circuits at collector currents to 80 mAdc. · fT = 2.2 GHz (min) · C c = 1.5 pF (max) @ Vcb = 4.0 , 25°C, Note 1) Parameter BVqeo ( sus) Min 10 20 3.0 - - - 25 Max - - - 20 100 1.5 200
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OCR Scan
2N5841 2n5842 RF502 2C5841 2N5842

CMPT918

Abstract: rf-transistor Temperature Thermal Resistance SYMBOL vCBO vCEO vEBO 'C PD TJ'Tstg ©JA 30 15 3.0 50 350 -65 to +150 , SYMBOL TEST CONDITIONS MIN MAX UNITS 'CBO VCB=15V 10 nA bvCbo IQ=1 .OUA 30 V bvceo IC=3.0mA 15 V
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OCR Scan
CMPT918 rf-transistor 100MH 500MH 200MH
Abstract: temperature Storage temperature range l^C EO I/CB0 V'ebo /C /e Plot 12 15 2 50 10 280 V , Thermal resistance junction-ambient package mounted on alumina 15 mm x 16.7 mm x 0.7 mm Siemens -
OCR Scan
Q62702-F1068 Q62702-F1080 T-31-17 BF770A
Abstract: e =6.0V, lc =5.0mA, f=200MHz 15 Vq e =6.0V, lc =1,5mA, Rs =50i2, f=200MHz 0001Ã33 hü7 m 182 -
OCR Scan
CMPT5179

BFG425W

Abstract: BFG425W APPLICATION measured 1.8 1.5
Philips Semiconductors
Original
RNR-T45-97-B-0686 BFG425W BFG425W APPLICATION transistor bipolar driver schematic Z048 900MH BFG400W

transistor bipolar driver schematic

Abstract: BFG425W =2GHz |S 21|2 [dB] 17 GP [dB] ~15 GP [dB] ~15 PAE >30% VSWRi
Philips Semiconductors
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RNR-T45-97-B-0787 2Ghz amplifier b0787 BFG425
Abstract: TrL4 IC1 Substrate Value 1 150 150 1.5 1.2 22 1 4.7 10 22 1 Unit k pF pF pF , 22 pF 1 nF 1.5 pF 22 pF 150 Ohm 1k Ohm 1.2 pF BFP420 Semiconductor Group 2 Infineon Technologies
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540ESD BFP540ESD 460L3 BFR460L3 434MH BFP460

C547* transistor

Abstract: transistor C4 016 output) Coil_1 15 nH Input match (base-bias) Coil_2 15 nH Output match (collector-bias) us4 , 15 nH 15 nH size: H=0.5mm 0603 Philips 0603 Philips 0603 Philips 0603 Philips 0603 , ] 1.1 1.5 1.7 -27 -30 -31 3.0 2.7 2.8 1.6 1.5 1.5 1.7 1.8 2.0 0.5 1.0 1.5
Siemens
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BCR400W C547* transistor transistor C4 016 BFP420 application note SOT343 C5 RF TRANSISTOR C547u D-81541

BFG403W

Abstract: 0805CS Series 1.5 2 2.5 3 Vcon [V Figure 2: ISUP and S21 as funcion of VCON. (VSUP=3.0V, f
Philips Semiconductors
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BFG403W 0805CS 0805CS Series 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W amplifier 900mhz RNR-T45-97-B-006

BFG425W

Abstract: 900mhz driver mA 1.7 10 2 1.5 IC Vdrop 1.6 1.4 1.3 10 1 1.2 1.1 1 10 0 0.9 0.8 , application 2.2 1.5 mA mA 1.8 1.1 IContr. IContr. 1.2 1 0.9 1.6 1.4 0.8
Philips Semiconductors
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900mhz driver DRIVER DESIGN philips c3 RF 900MHz RNR-T45-97-B-0688
Abstract: Transistor 10 3 mA V 2 1.7 1.6 10 2 Vdrop 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 -2 10 , Control current I = f (V S) in current source application 1.5 mA 2.2 mA 1.2 1.8 IContr Infineon Technologies
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EHA07188

IC 555

Abstract: 726-BCR400WH6327 10 2 1.5 IC V drop 1.6 1.4 1.3 10 1 1.2 1.1 1.0 10 0 0.9 0.8 0.7 0.6 , in current source application 2.2 1.5 mA mA 1.8 1.2 1.6 IContr. IContr
Infineon Technologies
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726-BCR400WH6327 IC 555 IC555 npn marking tx BCR400WH6327 marking transistor RF H6327

IC 555

Abstract: IC555 Transistor V 10 3 2 mA 1.7 10 2 1.5 IC V drop 1.6 1.4 1.3 10 1 1.2 , source application in current source application 2.2 1.5 mA mA 1.8 1.1 IContr
Infineon Technologies
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IC 555 as temperature controller ic 555 timer working IC 555 working 43K10 power dissipation fet 400W VPS05605 EHA07190 EHA07217 EHA07218 EHA07219 EHA07191

IC 555

Abstract: ic 555 timer working 1 nF 22 pF 1 nF 1.5 pF 22 pF 150 Ohm 1k Ohm 1.2 pF BFP420 , BCR400W / collector current C1 1.5 pF 0603 Input match C2 1.2 pF 0603 Output
Infineon Technologies
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BCR400 IC 555 timer application note ic 555 DC bias of FET marking W4s

C547* transistor

Abstract: BCR400W HP-MDS f=1.5GHz BFG425W SPICE model 15.1 -25.5 1.6 1.8 1.5 |S21|2 [dB] |S12|2 [dB] VSWRi
Infineon Technologies
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AN016

Philips npo 0805

Abstract: 5Ghz lna transistor datasheet Z0~95 (PCB: r ~4.6, H=0.5mm) Emitter induction: u-stripline + via 15 0 22 82 100 4.7 5.6 , : R1 R2 R3 R4 R5 C1 C2 C3 C4 C5 C6 15 K 0 22 82 100 4.7 pF 5.6 pF 5.6 pF 1 , MODEL NF [dB] note 1. 1.7 1.7 1.9 2.0 2.2 2.4 14.3 1.5 16.3 2.0 note 1: There , 6.7 NF [dB] 1.5 1.7 1.8 1.9 2.1 2.3 note 1: IP3_A: IP3 without LF-decoupling at base
Philips Semiconductors
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CMP409 CMP250 Philips npo 0805 5Ghz lna transistor datasheet CMP286 CMP287 philips satellite systems RNR-T45-97-B-0584 CMP408 CMP358 CMP394 CMP197 CMP18

C547* transistor

Abstract: BFP420 match through C7 that provides better than 1.5:1 match. L2 is the RF choke grounded through C5 and , Current 5 5 Operating Frequency 2400-2483.5 1930-1990 Gain 10 12 NF 1.5 1.3 Input IP3 0 3 1 dB Compression Point -5.0 0 Input VSWR (50 Ohms) 2.5:1 (-9.5 dB) -10 Output VSWR (50 Ohms) 1.5:1 (-14 dB) -15 Stability at all Frequencies Unconditionally Stable Unconditionally Stable , TOKO 13 15 nH INDUCTOR TOKO 12 2.7 nH INDUCTOR TOKO 11 0603 30 K OHM RES ROHM 10 0603 120 pF
Siemens
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R3150 A04 RF amplifier SIEMENS BFP420
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