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RF TRANSISTOR 1.5 GHZ dual gate

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Abstract: System Efficiency P 2 BFG325W/XR BFG325W/XR 14 GHz NPN wideband transistor Vout = 1.2V Vout = 0.8V 100 , Further information: 14 GHz NPN wideband transistor Key features Philips BFG325W/XR BFG325W/XR is a 14 GHz NPN silicon planar epitaxial transistor housed in a 4-pin dual-emitter SOT343R (CMPAK-4) plastic package. Designed for RF front end applications in the GHz range, it , receiver DH (TSSOP20 TSSOP20) 74LVC1G32 74LVC1G32 3.3 V single 2-input OR gate GM (MicroPak) SA601 SA601 1 GHz ... Philips Semiconductors
Original
datasheet

8 pages,
173.93 Kb

A wide-band hot mirror BCM847BS BCM857BS Building DECT Repeater buj103ad equivalent diode gm 4c GSM repeater circuit using transistor MSE336 P89LPC9102 PIP212-12M PESD12VL1BA PESD5V0L7BAS RF SMD transistors pnp BFG310W/XR transistor SOT363 SOT343R reset DMX DECODER IC TRANSISTOR SMD CODE PACKAGE SOT363 Transistor SMD SOT363 SC70 SC88 Transistor SMD SOT363 SC70 TEXT
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Abstract: , Mobile Satcom & GPS Systems - 1.5­2 GHz MONOLITHIC INTEGRATED CIRCUITS (continued) RF , Transistor Dual GP NPN Transistor Dual GP PNP Transistor Dual GP PNP Transistor Dual Schottky Barrier , Diode Dual Schottky Barrier Diode Dual UHF/VHF Transistor Dual UHF/VHF Transistor Dual UHF/VHF Transistor Dual N­Channel J­FET Dual N­Channel J­FET Dual N­Channel J­FET P­Channel Low Threshold Low RDS , comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low ... Motorola
Original
datasheet

24 pages,
311.23 Kb

MTB35N06ZL MHW2821-1 MHW910 MBT3904DW9T1 100 amp 1200 volt Triac MHW2723 NPN 800V 900 watt 3a MHW2905 10 amp igbt 1000 volt MHW8272 MRF9242 solid state 220 volt stabilizer circuit MRF1510 triac MAC 97 AB MRF9282 TRANSISTOR MOTOROLA MAC 223 TEXT
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Abstract: with RF drive level, the series gate resistance should be kept small to minimize its pinchoff effect , f, GHz TYPICAL RF PERFORMANCE (room temperature) P1dB, OIP3, Input RL, Output Gain, dB dBm , 1.92 f, GHz f, GHz 1.880 1.960 2.040 f, GHz TYPICAL RF PERFORMANCE (room temperature , stability. It has been assumed that the backside layer has no effect on the RF performance or circuit , same fixed gate voltage for all devices. Active bias circuitry is strongly recommended, as it will ... Sirenza Microdevices
Original
datasheet

8 pages,
114.97 Kb

MCH185A150JK LL1608-FS3N9S Sirenza AN-21 ML200C MCH185A8R2DK LL1608-FS4N7S MCH182CN104KK LL1608-FS5N6S AN066 3143 SPF 188 SPF-3143 SPF-3043 AN-066 AN-066 SPF-3143 TEXT
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Abstract: to its ability to limit gate current under RF drive compression. A graph of gate current vs RF , RF drive level is beginning to self bias the gate to source junction increasing the gate current to , dual PNP transistor is used in the regulator. Q2b is wired solely as a diode to offset the VBE changes , that produces the voltage required to force the desired drain voltage VDS. The dual PNP transistor , gate current when the device is subjected to high RF drive levels. C7 provides a low frequency bypass ... Avago Technologies
Original
datasheet

6 pages,
267.46 Kb

VMMK1225 VMMK-1218 ATF-36077 1000u k 1225 VMMK-1225 phemt biasing ATF-36077 TEXT
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Abstract: RMPA61800 RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description , Lowell Street Andover, MA 01810 RMPA61800 RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC , 01810 RMPA61800 RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION , assembly. (2) Use 3-1 mil gold wires about 25 mils in length for optimum RF performance. (3) Vg: Gate , Chip RF IN RF OUT L Ground 100pF (Back of Chip) L Bond Wire Ls 10,000pF Gate Supply ... Raytheon RF Components
Original
datasheet

7 pages,
378.19 Kb

RMPA61800 CuMoCu RF TRANSISTOR 1.5 GHZ dual gate TEXT
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Abstract: (GHz) Dual Gate FETs VHF Band (f=200 MHz) Dual Gate FET NF-Gps MAP 2.5 Noise Figure NF (dB , .6 Dual Gate FETS , .13 Dual Gate MOS FETs .14 Dual Gate GaAs FETs , .20 Dual Gate MOS FETs ... NEC
Original
datasheet

76 pages,
1053.44 Kb

Diode SOT-23 marking 15d t79 Ku BAND SUPER LOW NOISE AMPLIFIER ic 7905 MMIC L band to Ku converter NE582M03 3SK177 uPC1652 2SC5431 2SC2148 NEM0899F01-30 NEC U71 MC-7712 D-40472 NEC Ga FET marking code T79 D-40472 pc1658 D-40472 transistor marking T79 ghz D-40472 gaas fet T79 D-40472 PC1658G D-40472 manual* cygnus sl 5000 D-40472 UAA 1006 D-40472 D-40472 D-40472 TEXT
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Abstract: original data from which it was extracted. Die Model - Gate Width = 600 um, Optimized for 0.1 GHz to , 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS CDQ0303-QS October 2007 - Rev 22 , Pseudomorphic High Electron Mobility Transistor (pHEMT) High Gain: 25 dB @ 900 MHz 21 dB @ 1900 MHz Low Noise Figure: 0.6 dB @ 900 MHz 0.7 dB @ 1900 MHz 17 dBm P1dB at 2 GHz 33 dBm OIP3 at 2 GHz 600um Gate Width: 50 Output Impedance Excellent Uniformity Ultra Compact Surface-Mount QFN Package 10 Year ... Mimix Broadband
Original
datasheet

14 pages,
528.08 Kb

PB-CDQ0303-QS-00B0 PB-CDQ0303-QS-00A0 MCH185A101JK CDQ0303-QS-0G0T CDQ0303-QS-0G00 CDQ0303-QS TEXT
datasheet frame
Abstract: circuit as the previously mentioned dual source type, the gate voltage is selected independently of RS , . Therefore, a positive and negative dual power source should be used to bias the drain and gate separately , receivers, and then in transmitters. Progress in bipolar transistor technology and the production of new , feasible gallium arsenide field effect transistor (GaAs FET) appeared, and the uses of this device are , EFFECT TRANSISTOR (FET) In 1952, Shockley conceived the structure of the field effect type transistor ... California Eastern Laboratories
Original
datasheet

27 pages,
280.79 Kb

NE21889 GUNN DIODE gunn diode datasheet NE9004 NE868296 NE800898-6 NE800898-4 ne800495-6 NE72089 NE8001 shockley diode application NE800495-4 shockley diode NE868199 AN82901-1 SK3448 AN82901-1 ne8002 AN82901-1 diode deg avalanche zo 150 63 AN82901-1 NE24406 AN82901-1 NE800196 AN82901-1 NE800296 AN82901-1 AN82901-1 AN82901-1 TEXT
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Abstract: previously mentioned dual source type, the gate voltage is selected independently of RS and ID. Thus, it is , positive and negative dual power source should be used to bias the drain and gate separately. For a GaAs , receivers, and then in transmitters. Progress in bipolar transistor technology and the production of new , feasible gallium arsenide field effect transistor (GaAs FET) appeared, and the uses of this device are , EFFECT TRANSISTOR (FET) In 1952, Shockley conceived the structure of the field effect type transistor ... California Eastern Laboratories
Original
datasheet

27 pages,
415.66 Kb

shockley diode application NE8001 universal fet biasing curve graph diagram of gunn diode NE800898-7H GaAs FET amplifer NE8681 impatt diode NE800495-4 ne800495-6 NE24406 NE800196 AN82901-1 gunn diode ghz s-parameter AN82901-1 universal jfet biasing curve graph AN82901-1 SK3448 AN82901-1 ne8002 AN82901-1 NE72089 AN82901-1 diode deg avalanche zo 150 63 AN82901-1 NE800296 AN82901-1 AN82901-1 AN82901-1 TEXT
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Abstract: . Thus the transistor emitter voltage adjusts the voltage incident at the gate of the FET so that the , for operation. A Rohm dual transistor, UMT1N, and a dual chip resistor (8.2 k) are recommended to , The Communications Edge TM Application Note Product Information 5.25 GHz AP4 Application , application note details the performance of the AP4 optimized for the 5.15 ­ 5.35 GHz frequency band to , 5.15 ­ 5.35 GHz 5.25 GHz 10.3 dB -11.0 dB -12.7 dB -20.0 dB 28.7 dBm 42 dBm +8.0 V @ 150 mA ... WJ Communications
Original
datasheet

3 pages,
201.2 Kb

wifi 2 watt amplifier circuit resistor 8.2 k 120 ap4 wifi amplifier circuit RF TRANSISTOR 1.5 GHZ dual gate wifi schematic wifi 5 watt amplifier circuit TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
transistor BFG10 BFG10 - NPN 2 GHz RF power transistor BFG10/X BFG10/X - NPN 2 GHz RF power transistor BFG10W/X BFG10W/X - UHF power transistor BFG11 BFG11 - NPN 2 GHz RF power transistor BFG11/X BFG11/X - NPN 2 GHz RF power transistor BFG11W/X BFG11W/X - NPN 2 GHz power dual-gate MOS-FETs BF1102 BF1102 - Dual N-channel dual gate MOS-FETs BF1102R BF1102R - Dual N-channel dual gate MOS-FETs BF1105 BF1105 - N-channel dual-gate MOS-FETs BF1105R BF1105R -
/datasheets/files/philips/catalog/listing/30928-v1.html
Philips 17/02/2002 443.53 Kb HTML 30928-v1.html
SILICON NPN SWITCHING TRANSISTOR BU406 BU406 2848 HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS SD1729 SD1729 TH416 TH416 GHZ SATCOM APPLICATIONS RF & MICROWAVE TRANSISTORS SD1888-03 SD1888-03 6419 N-CHANNEL 100V - 0.33 OHM - 2A SOT-223 STRIPFET POWER MOSFET STN2NE10 STN2NE10 2856 1.6 GHZ SATCOM APPLICATIONS RF & MICROWAVE TRANSISTORS , TRIAC & PWM DRIVER ST52E301/C ST52E301/C ST52T301/P ST52T301/P 2859 1.6 GHZ SATCOM APPLICATIONS RF & MICROWAVE TRANSISTORS 74VCX16245 74VCX16245 2860 1.65 GHZ SATCOM APPLICATIONS RF & MICROWAVE TRANSISTORS SD1897 SD1897 6424 N-CHANNEL 800V - 4.6 OHM
/datasheets/files/stmicroelectronics/stonline/db/psearch-v3.txt
STMicroelectronics 30/03/1999 189.32 Kb TXT psearch-v3.txt
transistor BFG10 BFG10 - NPN 2 GHz RF power transistor BFG10/X BFG10/X - NPN 2 GHz RF power transistor BFG10W/X BFG10W/X - UHF power transistor BFG11 BFG11 - NPN 2 GHz RF power transistor BFG11/X BFG11/X - NPN 2 GHz RF power transistor BF1102 BF1102 - Dual N-channel dual gate MOS-FETs BF1102R BF1102R
/datasheets/files/philips/catalog/listing/30928.html
Philips 25/04/2003 593.37 Kb HTML 30928.html
diodes 2N3904 2N3904 - NPN switching transistor 2N3906 2N3906 - PNP switching transistor 2N4401 2N4401 - NPN switching transistor 2N5401 2N5401 - PNP high-voltage transistor 2N5550 2N5550 - NPN high-voltage transistors N-channel enhancement mode field-effect transistor
/datasheets/files/philips/catalog/listing/27046.html
Philips 25/04/2003 970.82 Kb HTML 27046.html
cascode transistor BFG10 BFG10 - NPN 2 GHz RF power transistor BFG10/X BFG10/X - NPN 2 GHz RF power transistor BF1102 BF1102 - Dual N-channel dual gate MOS-FETs BF1102R BF1102R - Dual N-channel dual gate MOS-FETs BF1105 BF1105 - Dual N-channel dual gate MOS-FET BF1204 BF1204 - Dual
/datasheets/files/philips/catalog/listing/27046-v2.html
Philips 01/06/2005 903.08 Kb HTML 27046-v2.html
N-Channel MOS-Fieldeffect Triode, Depletion Mode bf550 BF550/BF550R BF550/BF550R Silicon PNP RF Transistor bf569 BF569/BF569R BF569/BF569R Silicon PNP RF Transistor bf579 BF579/BF579R BF579/BF579R Silicon PNP RF Transistor cd_fax BF775 BF775 Silicon PNP RF Transistor bf961 BF961 BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode bf964 BF964S BF964S Transistor bf988 BF988 BF988 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode bf994 BF994S BF994S N-Channel BF998 BF998 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode cd_fax BFP181T BFP181T Silicon NPN Planar RF
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Temic 12/03/1997 67.32 Kb TXT allparts.txt
  One-Shot With Clear and Complementary Outputs 5420DM 5420DM. -   Dual 4-Input NAND Gate 5474DM 5474DM. -   Dual 2-Input AND Gate 54F10 54F10 MW8 -   Triple 3-Input NAND Gate 54F109DC 54F109DC -   Dual JK (Note: Overbar Over Register 54F20 54F20 MW8 -   Dual 4-Input NAND Gate 54F20DC 54F20DC -   Dual 4-Input NAND Gate 54F20DM 54F20DM. -   Dual 4-Input NAND Gate 54F20DMQB 54F20DMQB -   Dual 4-Input NAND Gate 54F20FMQB 54F20FMQB. -   Dual 4-Input NAND Gate 54F20LMQB 54F20LMQB. -   Dual 4-Input NAND Gate 54F219 54F219 MW8 -   64-Bit Random Access Memory with
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National 03/04/1998 914.22 Kb HTM wcd052dd.htm
No abstract text available
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Temic 03/03/1997 149 Kb XLS allparts.xls
QUAD DARLINGTON SWITCH ST | QUAD INVERTING TRANSISTOR SWITCH ST | DUAL HIGH CURRENT RELAY DRIVER ST 2-INPUT AND GATE (OPEN DRAIN) ST | TRIPLE 3-INPUT NAND GATE ST | DUAL J-K FLIP FLOP WITH CLEAR ST | DUAL J-K FLIP FLOP WITH PRESET AND CLEAR ST | TRIPLE 3-INPUT AND GATE ST | DUAL J-K FLIP FLOP WITH BIT PIPO SHIFT REGISTER ST | 8 BIT PIPO SHIFT REGISTER ST | DUAL 4-INPUT NAND GATE ST | DUAL 4-INPUT AND GATE ST | DUAL MONOSTABLE MULTIVIBRATOR ST | 3 TO 8 LINE DECODER LATCH ST | 3 TO 8 LINE
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STMicroelectronics 20/10/2000 158.98 Kb TIT ds.tit