NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: RMPA61800 RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description , Lowell Street Andover, MA 01810 RMPA61800 RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC , 01810 RMPA61800 RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION , assembly. (2) Use 3-1 mil gold wires about 25 mils in length for optimum RF performance. (3) Vg: Gate , Chip RF IN RF OUT L Ground 100pF (Back of Chip) L Bond Wire Ls 10,000pF Gate Supply ... | Original |
7 pages, |
RMPA61800 CuMoCu RF TRANSISTOR 1.5 GHZ dual gate RMPA61800 abstract |
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| Abstract: Transistor) device whose nominal 0.3 micron gate length and 900 micron gate width make it ideally suited to , Optimum P1dB Output Power at Max Efficiency Compression Point = 1.5 dB VDS= 6.0 V IDS= 190mA Cpd , Time 102210 mA 12 GHz PARAMETER Rd Cgs GATE 12 GHz -12.0 55 Cgd Rg , Gate-to-Source Breakdown Volt. Igs= -1.5 mA Gate-to-Drain Breakdown Volt. Igd= -1.5 mA IDSS RF , MwT-H16 32 GHz High Power AlGaAs/InGaAs PHEMT MwT-H16 DUAL BIAS Output Reference Plane MwT-H16 ... | Original |
2 pages, |
SOLAR TRANSISTOR High Power Microwave Device datasheet abstract |
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| Abstract: 6.5 200 mil BeO disk Notes: 1. Typical at 900 MHz 2. Dual transistor - All data is per individual transistor. 3. Typical G1 dB at 2 GHz Gallium Arsenide (GaAs) Field Effect Transistors (FETs , Gate Width (um) Frequency Range (GHz) Test Freq. (GHz) Vdd (V) I dd (mA) NFo (dB , 135 1.1 1.8 1.4 1.5 0.6 15.5 14.6 14.8 17.0 20.0 45.3 47.0 41.7 42 38 +29.1 , 0.4 16.0 22 +12 SOT-343 (SC-70 SC-70) ATF-36077 ATF-36077 200 1.5 - 18 12 1.5 10 0.5 ... | Original |
2 pages, |
AT-30533 AT-32032 AT-32033 AT-32063 AT-41411 AT-30511 AT-31033 AT-31011 ATF-36163 ATF-54143 application notes LPCC phemt biasing ATF-36077 S21E transistor atf datasheet abstract |
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| Abstract: transistors. Thus the transistor emitter voltage adjusts the voltage incident at the gate of the FET so that , needed for operation. A Rohm dual transistor, UMT1N, and a dual chip resistor (8.2 k) are recommended to , The Communications Edge TM Application Note Product Information 5.25 GHz AP4 Application , application note details the performance of the AP4 optimized for the 5.15 5.35 GHz frequency band to , 5.15 5.35 GHz 5.25 GHz 10.3 dB -11.0 dB -12.7 dB -20.0 dB 28.7 dBm 42 dBm +8.0 V @ 150 mA ... | Original |
3 pages, |
wifi amplifier circuit resistor 8.2 k 120 ap4 RF TRANSISTOR 1.5 GHZ dual gate wifi schematic wifi 5 watt amplifier circuit datasheet abstract |
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| Abstract: System Efficiency P 2 BFG325W/XR BFG325W/XR 14 GHz NPN wideband transistor Vout = 1.2V Vout = 0.8V 100% , GHz NPN wideband transistor Key features Philips BFG325W/XR BFG325W/XR is a 14 GHz NPN silicon planar epitaxial transistor housed in a 4-pin dual-emitter SOT343R (CMPAK-4) plastic package. Designed for RF , trademark of Fairchild Semiconductor. Key features · · · · · Measure 1.5 x 1.0 x 0.5 mm 0.5 mm , ) PBLS1503V PBLS1503V 15 V, 500 mA PNP BISS Loadswitch SOT666 PMEM4020APD PMEM4020APD PNP transistor/Schottky rectifier ... | Original |
8 pages, |
BGM1013 BCM857BS BCM847BS adc ENCODER/DECODER SC16C554B SC16C654B transistor SMD DK rc SSOP20 SOT363 flash sod323 4pin 74LVC1G19 smd transistor sot363 SC16C754B BFG310W/XR datasheet abstract |
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| Abstract: 2 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) GHz single-pole four throw ( SP4T ) GaAs Fig. 1 The , 1.5 2 2.5 3 by previously available FREQUENCY (GHz) SP4Ts on the market. -20 -30 -40 -50 -60 0 0.5 Fax: 978-250-3373 1 1.5 2 FREQUENCY (GHz) 2.5 3 Web Site , gate current is -1 mA (typ). Table 1, the truth table, lists the A and B control voltages vs. the RF , MICROWAVE CORPORATION PRODUCT FEATURE HMC165S14 HMC165S14 SEPTEMBER 1999 MINIATURE DUAL CONTROL SP4T ... | Original |
2 pages, |
SP4T package SOIC14 HMC165S14 74HCT04 sp4t switch die antenna diversity switch HMC165S14 abstract |
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| Abstract: (GHz) Figure 4. VMMK-1225 VMMK-1225 50 Gain vs Frequency for varying printed circuit board thickness 1.5 , respect to its ability to limit gate current under RF drive compression. A graph of gate current vs RF , RF drive level is beginning to self bias the gate to source junction increasing the gate current to , dual PNP transistor is used in the regulator. Q2b is wired solely as a diode to offset the VBE changes , that produces the voltage required to force the desired drain voltage VDS. The dual PNP transistor ... | Original |
6 pages, |
VMMK1225 VMMK-1218 ATF-36077 1000u VMMK-1225 k 1225 phemt biasing ATF-36077 VMMK-1225 abstract |
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| Abstract: with RF drive level, the series gate resistance should be kept small to minimize its pinchoff effect , f, GHz f, GHz 1.880 1.960 2.040 f, GHz TYPICAL RF PERFORMANCE (room temperature) P1dB , assumed that the backside layer has no effect on the RF performance or circuit design. Design , voltage. Normal pinchoff variation from part-to-part may preclude the use of the same fixed gate voltage , pinchoff variation and provide temperature compensation. Most active bias circuits limit the transistor ... | Original |
8 pages, |
ML200C MCH185A150JK MCH182CN104KK LL1608-FS4N7S LL1608-FS3N9S SPF 188 SPF-3143 SPF-3043 AN-066 AN-066 abstract |
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| Abstract: RMPA61800 RMPA61800 Dual-Channel 6-18 GHz 2W MMIC Power Amplifier The Raytheon RMPA61800 RMPA61800 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor (PHEMT) process to maximize efficiency and , Input Return Loss Output Return Loss Gate Voltage (VG) Two Identical Channels 18.0 dB Typical , Compression, Single Channel 33 dBm Output Power at 3 dB Gain Compression, Dual Channel 22% Typical Power ... | Original |
2 pages, |
RMPA61800 RAYTHEON amplifier TRANSISTOR 12 GHZ 9452 RMPA61800 abstract |
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| Abstract: (Pseudomorphic-High-Electron-Mobility Transistor) device whose nominal 0.3 micron gate length and 250 micron gate width make it ideally , MwT-H7 32 GHz Medium Power/ High Gain AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns FEATURES 50 50 · 21.5 dBm POWER OUTPUT AT 12 GHz · EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS · 0.3 MICRON REFRACTORY METAL/GOLD GATE · 250 MICRON GATE WIDTH · CHOICE OF CHIP AND TWO PACKAGE TYPES 70 241 100 50 50 50 50 356 CHIP ... | Original |
2 pages, |
SOLAR TRANSISTOR H773 datasheet abstract |
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| .2 1.3 30 8 to 16 1.5@800MHz Fully internal bias SOT143B VHF and UHF 1 11 24 BF1109R BF1109R BF1109R BF1109R MOSFETS for RF preamplifier stages 2.2 1.3 30 8 to 16 1.5@800MHz Fully internal 1109WR 1109WR 1109WR 1109WR; N-channel dual-gate MOS-FETs General info Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect .2 1.3 30 8 to 16 1.5@800MHz Fully internal bias SOT143B VHF and UHF 1 11 24 www.datasheetarchive.com/files/philips/pip/bf1109_r_wr_2.html |
Philips | 23/04/2003 | 4.73 Kb | HTML | bf1109_r_wr_2.html |
| preamplifier stages 3.1 1.7 40 1.7 3 to 27 1.5@800MHz With external bias SOT143B VHF and UHF 2 12 36 BF908R BF908R BF908R BF908R MOSFETS for RF preamplifier stages 3.1 1.7 40 1.7 3 to 27 1.5 BF908-R BF908-R BF908-R BF908-R_2 Product information page BF908 BF908 BF908 BF908; BF908R BF908R BF908R BF908R; Dual-gate MOS-FETs General info Depletion type field-effect transistor in a plastic microminiature SOT143 BF908 BF908 BF908 BF908; BF908R BF908R BF908R BF908R Dual-gate MOS-FETs 30-jul-96 Product Specification 8 60 www.datasheetarchive.com/files/philips/pip/bf908-r_2.html |
Philips | 23/04/2003 | 4.72 Kb | HTML | bf908-r_2.html |
| .2 1.3 1.2 Fully internal bias MOSFETS for RF preamplifier stages 2.2 1.5@800MHz 30 MOSFETS for RF preamplifier stages 30 VHF and UHF 1.5@800MHz 30 .2 8 to 16 2.2 11 1.5@800MHz 30 MOSFETS for RF preamplifier stages VHF MOSFETS for RF preamplifier stages 8 to 16 11 1.3 1.2 BF1109WR BF1109WR BF1109WR BF1109WR VHF and UHF 1.5 RF preamplifier stages 1.5@800MHz 1.2 30 Fully internal bias 30 1 www.datasheetarchive.com/files/philips/pip/bf1109_r_wr_2-v1.html |
Philips | 14/02/2002 | 11.51 Kb | HTML | bf1109_r_wr_2-v1.html |
| ; BF908R BF908R BF908R BF908R; Dual-gate MOS-FETs General info Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R -V(P)GS MAX(V) V DS max(V) Y FS (ms) BF908 BF908 BF908 BF908 3.1 1.7 40 1.7 3 to 27 1.5@800MHz With external bias VHF and UHF 2 12 36 BF908R BF908R BF908R BF908R 3.1 1.7 40 1.7 3 to 27 1.5 908; BF908R BF908R BF908R BF908R Dual-gate MOS-FETs 30-7-1996 Product Specification 8.0 60 www.datasheetarchive.com/files/philips/pip/bf908-r_2-v2.html |
Philips | 15/06/2005 | 6.31 Kb | HTML | bf908-r_2-v2.html |
| Noise HCMOS Dual Gate: VHC/VHCT Low Noise HCMOS Card Products Memory Card Protection Circuits Transil 400W 600W 1.5kW 5 Motion Control Boards Radio Frequency RF Power HF Transistors VHF -Band Radar Transistors 1.6 GHz Satcom Transistors Telemetry/Communication Transistors Power Modules RF Signal GPS Wireless ICs RF Transistors www.datasheetarchive.com/files/stmicroelectronics/stonline/books/toc/ds/index-v1.htm |
STMicroelectronics | 08/02/2001 | 45.54 Kb | HTM | index-v1.htm |
| Modules Boards RF & Microwave Silicon Power Transistors & Hybrid Power Modules Cross Protection Circuits Transil 400W SMD Transil 600W SMD Transil 1.5W SMD Transil 400W Axial Transil 600W Axial Transil 1.5W Axial Transil 5KW Axial Transil Application Notes Boards Motion Control Boards RF & Microwave Silicon Power Transistors Transistors 1.6 GHz Satcom Transistors Telemetry/Communication Transistors General Purpose www.datasheetarchive.com/files/stmicroelectronics/stonline/books/fr03.htm |
STMicroelectronics | 27/03/1998 | 19.6 Kb | HTM | fr03.htm |
| Protection Circuits Transil 400W 600W 1.5kW 5kW Trisil 30 RF & Microwave Silicon Power Transistors & Hybrid Power Modules HF Transistors VHF -Band Radar Transistors S-Band Radar Transistors 1.6 GHz Satcom Transistors Telemetry Package Ceramic Chip Carrier Ceramic Dual In-Line Standard Glass Plastic Dual In Flash Memory Single Supply 3V Single Supply 5V Dual Supply 3V Advanced www.datasheetarchive.com/files/stmicroelectronics/stonline/books/fr03-v2.htm |
STMicroelectronics | 14/06/1999 | 16.64 Kb | HTM | fr03-v2.htm |
| Protection Circuits Transil 400W 600W 1.5kW 5kW Trisil 30 RF & Microwave Silicon Power Transistors & Hybrid Power Modules HF Transistors VHF -Band Radar Transistors S-Band Radar Transistors 1.6 GHz Satcom Transistors Telemetry Package Ceramic Chip Carrier Ceramic Dual In-Line Standard Glass Plastic Dual In Flash Memory Single Supply 3V Single Supply 5V Dual Supply 3V Advanced www.datasheetarchive.com/files/stmicroelectronics/stonline/books/pdf/menu/index-v1.htm |
STMicroelectronics | 14/06/1999 | 14.97 Kb | HTM | index-v1.htm |
| Single Gate: VHC/VHCT Low Noise HCMOS Single Gate: HCMOS Dual Gate: VHC 600W 1.5kW 5kW Trisil 30A Motion Control Boards Radio Frequency RF Power HF Transistors L-Band Radar Transistors S-Band Radar Transistors 1.6 GHz Satcom Transistors General Purpose Linear Transistors Hybrid Power Modules RF www.datasheetarchive.com/files/stmicroelectronics/stonline/books/toc/ds/index.htm |
STMicroelectronics | 24/10/2000 | 46.82 Kb | HTM | index.htm |
| 1109; BF1109R BF1109R BF1109R BF1109R; BF1109WR BF1109WR BF1109WR BF1109WR; N-channel dual-gate MOS 1109 2.2 1.3 30 8 to 16 1.5@800MHz Fully internal bias VHF and UHF 1 11 24 BF1109R BF1109R BF1109R BF1109R 2.2 1.3 30 8 to 16 1.5@800MHz Fully internal bias VHF and UHF 1 11 24 BF1109WR BF1109WR BF1109WR BF1109WR 2.2 1.3 30 8 to 16 1.5@800MHz Fully internal bias VHF and UHF 1 11 24 count File size BF1109 BF1109 BF1109 BF1109; BF1109R BF1109R BF1109R BF1109R; BF1109WR BF1109WR BF1109WR BF1109WR N-channel dual-gate MOS-FETs 8 www.datasheetarchive.com/files/philips/pip/bf1109_r_wr_2-v2.html |
Philips | 15/06/2005 | 6.35 Kb | HTML | bf1109_r_wr_2-v2.html |