NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: micro-stripline envelopes. It Is designed for RF wideband amplifiers and applications up to 1 GHz. The transistor , lc= 14 mA; VCE= 10 V; f=500MHz;Tj = 25 °C - 5 - GHz gum maximum unilateral power gain lc = 14 mA; VCE , APX Product specification NPN 5 GHz wideband transistor BFP90A BFP90A - N AMER PHILIPS/DISCRETE bTE T , OQBmbT T3E I APX Product specification NPN 5 GHz wideband transistor BFP90A BFP90A N AUER PHILIPS/DISCRETE , 0031473 4b3 Hi APX Product specification NPN 5 GHz wideband transistor BFP90A BFP90A N AMER PHILIPS/DISCRETE ... | OCR Scan |
8 pages, |
TRANSISTOR D 471 c 3421 transistor BFP90A 1346 transistor SOT173 RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR C 4460 BFP90A abstract |
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| Abstract: Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL , = 10 V; f = 500 MHz; Tj = 25 °C - 5 - GHz gum maximum unilateral power gain lc= 14 mA; VCE= 10 V; f , NPN 5 GHz wideband transistor ' BFP90A BFP90A PHILIPS INTERNATIONAL 5bE D â- 7110B2b 00HS3b0 «PHIN , NPN 5 GHz wideband transistor /'/ ? BFP90A BFP90A PHILIPS INTERNATIONAL SbE D â- 7110fl2b 00i|S3bl 022 «PHIN , Respective Manufacturer 518 Philips Semiconductors Product specification NPN 5 GHz wideband transistor ... | OCR Scan |
8 pages, |
SOT-173 c 3421 transistor 150-1 TRANSISTOR D 471 BFP90A SOT173 BFP90A abstract |
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| Abstract: /DISCRETE b?E D NPN 5 GHz wideband transistor £ BFR106 BFR106 DESCRIPTION NPN silicon planar epitaxial transistor , transition frequency lc = 50 mA; VCE = 9 V; f = 500 MHz; Tmb=25°C - 5 GHz Gum maximum unilateral power gain , AflER PHILIPS/DISCRETE b?E T>- NPN 5 GHz wideband transistor BFR106 BFR106 +i lc = 30 mA; VCE = 6 V; Tamb = , specification N AMER PHILIPS/DISCRETE b7E D NPN 5 GHz wideband transistor BFR106 BFR106 180° 150° lc = 30 mA; VCE = , /DISCRETE b7E D- NPN 5 GHz wideband transistor BFR106 BFR106 Table 1 Common emitter scattering parameters, lc = ... | OCR Scan |
7 pages, |
UBB773 transistor t 2180 L7E transistor IC 1496 function BFR106 702 TRANSISTOR npn BFR106 abstract |
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| Abstract: Thus a four-pin RF bipolar transistor in the SOT-343 package attains about 1 dB more gain at 1.8 GHz , islands act as carriers of twin-diode pairs or transistor chips (RF and LF types). Alignment of pins on , mean that RF Schottky diodes, such as the BAT 15-03W (SOD-323 package), can be used at up to 24 GHz , 100 250 2 npn transistors 2 pnp transistors 1 npn, 1 pnp transistor 2 npn digital transistors 2 pnp digital transistors 1 npn, 1 pnp digital transistor VR V IF mA Ptot mW 70 ... | Original |
5 pages, |
smd code BCR amplifier siemens sot-363 RF NPN POWER TRANSISTOR C 10-50 GHZ BC 148 transistor TRANSISTOR SMD CODE PACKAGE SOT323 bfr 49 smd transistor smd code marking rf ft sot23 smd diode sod-323 marking code 31 smd rf transistor marking sot 23 smd transistor bc 847 SMD TRANSISTOR MARKING BF datasheet abstract |
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| Abstract: Philips Semiconducìors 711Dfl2b DOb^ltib 20Ã- HPHIN NPN 5 GHz wideband transistor Product , 50 mA; VCE = 9 V; f = 500 MHz; TMb = 25 °C - 5 - GHz gUM maximum unilateral power gain lc = 30 mA , Semiconductors ® 711062b DOh^lb? 1M4 â- PHIN Product specification NPN 5 GHz wideband transistor BFR106 BFR106 THERMAL , Semiconductors â- 7110flEb DObTlfctT T17 â- PHIN Product specification NPN 5 GHz wideband transistor BFR106 BFR106 1 lc = , Philips Semiconductors 711Gfi2b DGb^lTO 73e} PHIN Product specification NPN 5 GHz wideband transistor ... | OCR Scan |
7 pages, |
BFR106 0482 transistor BFR106 abstract |
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| Abstract: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 NE699M01 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M01 · HIGH fT: 16 GHz TYP , 13 pF Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2.0 GHz MAX dB 140 16 0.2 , mA Total Power Dissipation mW Junction Temperature °C 150 TSTG Storage , VCE = 2 V f = 2 GHZ 10 Insertion Power Gain, IS21E IS21E|2 (dB) Gain Bandwidth Product, fT (GHz ... | Original |
4 pages, |
SOT-363 662 S21E RF NPN POWER TRANSISTOR C 10-12 GHZ NE699M01-T1 NE699M01 519 510 IS21E 6621 sot-23 datasheet abstract |
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| Abstract: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION , (All Leads) 5 4 DESCRIPTION The NE699M01 NE699M01 is an NPN high frequency silicon epitaxial transistor , = 2 V, IE = 0, f = 1 MHz 2 pF Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2.0 GHz , Total Power Dissipation mW Junction Temperature °C Storage Temperature °C Tape & Reel , GHz Insertion Power Gain, |S21E|2 (dB) Gain Bandwidth Product, fT (GHz) 20 10 0 VCE ... | Original |
6 pages, |
S21E of IC 7432 NE699M01-T1 NE699M01 NE687 AT 1004 S12 IC 7432 datasheet abstract |
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| Abstract: SILICON TRANSISTOR NE661M04 NE661M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · · · · · HIGH POWER GAIN: IS21EI2 IS21EI2 = 17 dB TYP at 2 GHz HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.2 , Gain4 at VCE = 2 V, IC = 5 mA, f = 2 GHz Insertion Power Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz Noise Figure at VCE = 2 V, IC = 2 mA, f = 2 GHz, ZIN = ZOPT Output Power at 1 dB compression point at VCE = 2 V , Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C ... | Original |
9 pages, |
NE661M04 NE661M04 abstract |
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| Abstract: Power, POUT (dBm) 70 80 VCE = 2 V, f = 2 GHz Icq = 5 mA (RF OFF) 70 15 60 10 50 , NEC's NPN SILICON TRANSISTOR NE851M13 NE851M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE , Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = , INFORMATION V mA Total Power Dissipation mW Junction Temperature °C 150 TSTG Storage , TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse ... | Original |
9 pages, |
transistor BF 697 901 704 16 08 55 MJE 280 power transistor NE851M13 NE851M13-T3 S21E ta 7136 160 e7 LB 11899 2SC5801 IC 2262 AF NE851M13 abstract |
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| Abstract: (mA) 70 15 25 Output Power, POUT (dBm) 80 VCE = 2 V, f = 1 GHz Icq = 5 mA (RF OFF , NEC's NPN SILICON TRANSISTOR NE851M13 NE851M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE ,  Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC , mA 100 PT2 Total Power Dissipation mW 140 TJ Junction Temperature °C 150 , epoxy board. TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE ... | Original |
10 pages, |
S21E NE851M13 2SC5801 of IC 7476 in file NE851M13-T3-A NE851M13 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| SEMICONDUCTORS BFS520 BFS520 BFS520 BFS520 NPN 9 GHz wideband transistor September 1995 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 BFS520 BFS520 BFS520 FEATURES • High power gain • Low noise figure • High transition ; Tamb = 25 °C. handbook, halfpage MRC022 MRC022 MRC022 MRC022 0 2 4 6 8 10 12 1 10 100 fT (GHz) IC (mA) 3 V = 8 VCEV ; Tamb = 25 °C âˆ' 9 âˆ' GHz GUM maximum unilateral power gain Ic = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 junction temperature âˆ' 175 °C September 1995 3 Philips Semiconductors Product specification NPN 9 GHz www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFS520_CNV_3.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| SEMICONDUCTORS BFS505 BFS505 BFS505 BFS505 NPN 9 GHz wideband transistor September 1995 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 BFS505 BFS505 BFS505 FEATURES • Low current consumption • High power gain • Low noise current. f = 1 GHz; Tamb = 25 °C. handbook, halfpage MRC013 MRC013 MRC013 MRC013 0 2 4 6 8 10 12 10âˆ'1 1 10 102 fT (GHz) IC (m Product specification NPN 9 GHz wideband transistor BFS505 BFS505 BFS505 BFS505 PACKAGE OUTLINE UNIT A1 max bp c D E e1 HE Lp Q . DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFS505_CNV_3.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| BFR505T BFR505T BFR505T BFR505T NPN 9 GHz wideband transistor M3D173 M3D173 M3D173 M3D173 2000 May 17 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505T BFR505T BFR505T BFR505T FEATURES • Low current consumption • High power gain • Low Product specification NPN 9 GHz wideband transistor BFR505T BFR505T BFR505T BFR505T In Figs 6 to 9, GUM = maximum unilateral power communication equipment (cellular phones, cordless phones and pagers) up to 2 GHz. DESCRIPTION NPN transistor in 2000 May 17 3 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505T BFR505T BFR505T BFR505T www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFR505T_3.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| BFS540 BFS540 BFS540 BFS540 NPN 9 GHz wideband transistor book, halfpage M3D102 M3D102 M3D102 M3D102 2000 May 30 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 BFS540 BFS540 BFS540 FEATURES • High power gain • Low noise figure A I =C 2000 May 30 7 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS equipment with signal frequencies up to 2 GHz. DESCRIPTION NPN transistor in a SOT323 plastic package GHz; Tamb = 25 °C âˆ' 9 âˆ' GHz GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFS540_4.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| A Ptot total power dissipation Tsp ≤ 90 °C [1] - - 135 mW Philips Semiconductors BFG424F BFG424F BFG424F BFG424F NPN 25 GHz BFG424F BFG424F BFG424F BFG424F NPN 25 GHz wideband transistor VCE = 2 V; f = 2 GHz; Tamb = 25 °C VCE = 2 V; f = 0.9 GHz; Tamb BFG424F BFG424F BFG424F BFG424F NPN 25 GHz wideband transistor 1. Product profile 1.1 General description NPN double (max) maximum power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C [2] - 23 - dB NF noise figure IC = 2 m BFG424F BFG424F BFG424F BFG424F NPN 25 GHz wideband transistor 5. Limiting values [1] Tsp is the temperature at the soldering www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG424F_1.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| A Ptot total power dissipation Tsp ≤ 103 °C [1] - - 135 mW Philips Semiconductors BFG424W BFG424W BFG424W BFG424W NPN 25 GHz NPN 25 GHz wideband transistor 7. Characteristics [1] Gp(max) is the maximum power gain, if K > 1. If BFG424W BFG424W BFG424W BFG424W NPN 25 GHz wideband transistor 1. Product profile 1.1 General description NPN double (max) maximum power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C [2] - 22 - dB NF noise figure IC = 2 m NPN 25 GHz wideband transistor 5. Limiting values [1] Tsp is the temperature at the soldering point of www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG424W_1.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| Mar 11 DISCRETE SEMICONDUCTORS BFG410W BFG410W BFG410W BFG410W NPN 22 GHz wideband transistor 1998 Mar 11 2 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W BFG410W BFG410W BFG410W FEATURES • Very high power gain • Low ) âˆ' 10 12 mA Ptot total power dissipation Ts ≤ 110 °C âˆ' âˆ' 54 mW hFE DC current gain IC = 10 mA; VCE = 2 V frequency IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C âˆ' 22 âˆ' GHz Gmax maximum power gain IC = 10 mA; VCE âˆ' GHz Gmax maximum power gain; note 1 IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C; see Figs 7 and 8 www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG410W_4.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| . APPLICATIONS • Communication and instrumentation systems. DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz frequency IC = 15 mA; VCE = 6 V; fm = 1 GHz 8 âˆ' GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C 15 âˆ' dB F noise figure Î"S = Î"opt; IC = 5 mA; VCE = 6 V; f = 1 GHz 1.4 âˆ' dB Ptot total power dissipation Ts = 60 °C; note 1 âˆ' 360 mW Rth j-s thermal resistance from junction to www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (PBR941_5.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| . APPLICATIONS • Communication and instrumentation systems. DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz frequency IC = 30 mA; VCE = 6 V; fm = 1 GHz 8 âˆ' GHz GUM maximum unilateral power gain IC = 30 mA; VCE = 6 V; Tamb = 25 °C; f = 1 GHz 14 âˆ' dB F noise figure Î"S = Î"opt; IC = 5 mA; VCE = 6 V; f = 1 GHz 1.3 âˆ' dB Ptot total power dissipation Ts = 60 °C; note 1 âˆ' 365 mW Rth j-s thermal resistance from junction to www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (PBR951_5.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| */ /* - Analog Switches */ /* - Power Sypplies */ /* - Transistors */ /* - Audio Amplifiers */; } /* */ /* RF Components */ /* RF Amplifiers */ part ad8350 : so8, msop8 { newattr "$comment" = "1GHz ) ; } /* */ /* Transistors / Transistoren */ /* Bipolar NPN */ part npn : default bsx { newattr "$comment" = "Transistor bipolar NPN" ; pin (c,b,e) ; } /* MOS-FET P-Channel / Anreicherungs IG-FET MOS P-Kanal */ part vp0808 , 10, 12, 2, 6, 3, 11, 8, 7,14, 1) ; } /* Audio Preamplifiers / Audio-Vorverstaerker */ part www.datasheetarchive.com/download/48664731-299145ZC/bae65022linux.tgz |
Kaleidoscope | 22/08/2005 | 11421.08 Kb | TGZ | bae65022linux.tgz |