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RF-HDT-SJLS-G1 Texas Instruments
RF-HDT-SNLE-G1 Texas Instruments TAG-IT(TM) HF-I STANDARD TRANSPONDER CHIP (WAFER, INKED, GRIND, SAWN ON TAPE)
RF-HDT-WNMC-M0 Texas Instruments Tag-it(TM) HF-I Plus Transponder Chip (Wafer, unprocessed) 0-WAFERSALE
RF-HDT-AJLC-G0 Texas Instruments
RF-HDT-WNME-M0 Texas Instruments Tag-it(TM) HF-I Standard Transponder Chip (Unprocessed) 0-WAFERSALE
RF-HDT-AJLE-G1 Texas Instruments RF-HDT-AJLE Tag-it(TM) HF-I Standard Transponder Chip (Wafer, bumped, inked, grind, sawn on tape)

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RF 2N3866

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon , ) Selection Low Cost RF Plastic Package Options 1 1 8 1 2 2 3 5 1 4 3 2N3866 , Thermal Data P D Total Device Dissipation Derate above 25º C 2N3866.PDF 10-28-02 Advanced , contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N3866 , , VCE = 5.0 Vdc) 2N3866 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A Collector-Emitter Saturation Voltage Advanced Power Technology
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2N4427 MRF4427 RF NPN POWER TRANSISTOR 1000 WATT Transistor 2N3866 for transistor bfr96 data 2n3866 2N6255 2N5179 BFR91 BFR90 MRF545 MRF544 MRF5812 MRF555
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay , transistors 2N3866; 2N4427 DESCRIPTION APPLICATIONS NPN overlay transistors in TO-39 metal , 2N3866 - 3.5 V 2N4427 - 2.0 V - 0.4 A 2N3866 2N4427 VCEO collector-emitter voltage open base 2N3866 2N4427 VEBO emitter-base voltage open collector IC , 200 °C RF performance TYPE NUMBER f (MHz) VCE (V) Po (W) Gp (dB) (% Philips Semiconductors
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MSA241 2N3866 application note 2N3866 class-a 2n3866 philips 2N3866 metal 2N3866 application Transistor 2n4427 MBB199
Abstract: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN , PRELIMINARY 2N3866/2N3866A.PDF 3-10-99 200 200 8000 Low Cost RF Plastic Package Options 4 , Thermal Data P D Total Device Dissipation Derate above 25ºC PRELIMINARY 2N3866/2N3866A.PDF 3-10-99 2N3866 / 2N3866A ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol Test , 5.0 Vdc) Both (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A Microsemi
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2N3866 equivalent BFR91 parameter S low cost BFR90 transistor 2N3866/2N3866A MRF555T MRF559 MRF8372 MRF557 MRF557T
Abstract: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · Silicon NPN, To , capacitors are air variable 059-7001 Rev - 9-2002 2N3866 / 2N3866A RF Low Power PA, LNA, and , mW/ ºC 059-7001 Rev - 9-2002 2N3866 / 2N3866A ELECTRICAL SPECIFICATIONS (Tcase = 25 , , VCE = 5.0 Vdc) Both (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A , 15 Vdc, f = 200 MHz) Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) 2N3866 2N3866A 500 800 Advanced Power Technology
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mrf571 MRF5943 MRF951 MRF571
Abstract: ï»¿â  bb53131 0Q217Ã1 bQE «APX N AMER PHILIPS/DISCRETE bTE P 2N3866 2N4427 SILICON PLANAR , v.h.f. and u.h.f. equipment. QUICK REFERENCE DATA Collector-emitter voltage Rbe = 10 fi 2N3866 , Ti max. 200 200 °c Transition frequency lc = 50 mA; VCE = 15V;f = 200 MHz min. 500 500 MHz R.F. performance type number f (MHz) VCE (V) Po 45 2N4427 175 12 1 , Respective Manufacturer AMER PHILIPS/DISCRETE 2N3866 2N4427 A blE D ^53^31 002^762 54^ HAPX RATINGS -
OCR Scan
philips ferroxcube 4312 020 36690 Philips 4312 020 4312 020 36640 RF 2N3866 philips 2N4427 PHILIPS Planar choke 7Z5S32 7Z08867 7Z10S20 7ZI0624 53T31
Abstract: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon , our web site at www.microsemi.com or contact our factory direct. 2N3866 / 2N3866A ELECTRICAL , (sat) DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) Both (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866 , ) 2N3866 2N3866A Typ. Max. Unit 500 800 800 - - MHz - 2.8 3.5 pF Rev , . 2N3866 / 2N3866A FUNCTIONAL Symbol Test Conditions Value Min. GPE Pout Power Gain Microsemi
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MRF553 MRF607 MRF581A BFY90 MRF914 MRF581 MRF586
Abstract: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN , Thermal Data P D Total Device Dissipation Derate above 25ºC MSC1067.PDF 3-10-99 2N3866 , (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A Collector-Emitter , (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) MSC1067.PDF 3-10-99 2N3866 2N3866A Typ. Max. Unit 500 800 800 - - MHz - 2.8 3.5 pF 2N3866 / 2N3866A FUNCTIONAL Symbol Microsemi
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npn UHF transistor transistor BFR91 4600 8 pin ic UHF power TRANSISTOR PNP TO-39
Abstract: File No. 80 QUGB/JD RF Power Transistors Solid State Division 2N3866 Silicon N-P-N Overlay , S a: LU 1 10 û. li. « 0.8 0.6 200 400 FREQUENCY (f)â'" MHz RCA-2N3866 is an , periphery-to-emitter area ratio resulting in low output capacitance, high rf current handling capability, and substantially higher power gain. The 2N3866 is intended for class-A, -B, or -C amplifier, frequency-multiplier , Lj : 2 turns No. 18 wire, 1/4" ID, 1/8" long L2: Ferrite rf choke, 1 turn, Z = 450Sà «CS-l3t45 -
OCR Scan
RCA-2N3866 RCA 2N3866 2N3866 RF output Design 2N3866 RF CLASS A rca 0190 transistor rca 711
Abstract: RF performance TYPE NUMBER f (MHz) VCE (V) Po (W) Gp (dB) 11 (%) 2N3866 , 2N3866; 2N4427 APPLICATIONS DESCRIPTION NPN overlay transistors in TO-39 metal packages with the , collector-emitter voltage open base 2N3866 2N4427 emitter-base voltage VEBO UNIT R B E=10ii 2N3866 VCEO MAX. open collector 2N3866 Ic 2N4427 collector current (DC) lc(AV , SYMBOL VCBO PARAMETER collector-base voltage 2N3866 CONDITIONS MIN. open emitter 55 New Jersey Semiconductor
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Abstract: C A SE 79*04 TO-205AD , SS C) F IG U R E 7 - SM ALL-SIGN AL C U R R EN T GAIN MOTOROLA RF DEVICE DATA 2-12 2N3866 , â  SEMICONDUCTOR 2N38G6 2N3866A TECHNICAL DATA The RF Line 1.0 W - 400 M Hz HIGH FREQ , Vdc) hFE Both 2N3866 2N3866A 5.0 10 25 200 200 â'" 1.0 500 800 - Cob , = 200 MHz) MHz fT 2N3866 2N3866A Output Capacitance (Vcb - 28 Vdc, Ig = 0, f - 1.0 MH 2 -
OCR Scan
2N3866 MOTOROLA s-parameter 2N3866A 2n3866a Motorola 0QT4032 Q0101 15V0C T-33-05
Abstract: v.h.f. and u.h.f. equipment. QUICK REFERENCE DATA R.F. performance Collector-emitter voltage 2N3866 , b5E D 711Dfl2b 00L3b7fl CHG â  PHIN PHILIPS INTERNATIONAL 2N3866 2N4427 SILICON PLANAR , . 500 500 MHz type number f (MHz) VCE (V) Po (W) Gp (dB) V 10 >45 2N4427 175 12 , Respective Manufacturer 2N3866 2N4427 bSE D 711DÃSb â¡Dt.3t.7c] T27 IPHIN PHILIPS INTERNATIONAL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) 2N3866 2N4427 -
OCR Scan
PHILIPS 4312 amplifier
Abstract: , TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY, TYPES 2N3866, 2N3866A, 2N3866UB, 2N3866AUB, JAN, JANTX, JANTXV , °C/W 2N3866, 2N3866A 1.0 2.9 60 30 3.5 0.4 60 175 2N3866UB, 2N3866AUB , (2N3866, 2N3866A) and 3.08 mW/°C (2N3866UB, 2N3866AUB) above TA ≥ +25°C. (2) TA = room ambient as , = 200 MHz hFE (1) VCE = 5.0 V dc IC = 50 mA dc 2N3866 2N3866A 2N3866 2N3866A 2N3866UB , MIL-PRF-19500 and as follows: η: . (eta) Collector efficiency = rf power out x 100 dc Microsemi
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MIL-PRF-19500/398K MIL-PRF-19500/398J JANHCA2N3866 JANHCA2N3866A
Abstract: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA 2N3866 2N3866A The RF Line 1.0 W - 400 MHz H , 0 C A S E 7 9 -0 4 T O -2 0 5 A D IT O -3 9 ) MOTOROLA RF DEVICE DATA 2N3866, 2N3866A , I D , 3 / 1 6 " lo n g R 1: 5 6 Ohm s MOTOROLA RF DEVICE DATA 2-11 2N3866, 2N3866A F IG U R , S IG N A L C U R R E N T G A IN MOTOROLA RF DEVICE DATA 2-12 2N3866, 2N3866A F IG U R E 8 , 5.0 0.1 hFE Both 2N3866 2N3866A v CE(sat) 5.0 10 25 - 200 200 1.0 Vdc fT 2N3866 2N3866A MHz -
OCR Scan
s-parameter 2N3866 motorola 2N3866 2n3866 211 sm 190 e3055 U028
Abstract: e re d b y T e c h n o lo g y m m RF Products m 2N3866 12N3866A ELECTRICAL , m m RF Products m 2N3866 I 2N3866A P A O K A B E E iTY ILE M 2 4 S A B £ c M , Micmsemi P ro g re s s P o w e re d b y T e c h n o lo g y m m a RF Products m 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · Silicon NPN, To-39 packaged VHF/UHF -
OCR Scan
MRF transistor mrf 304 107j capacitor MRF transistor mrf 1300 capacitor 107J MRFS81 RF557T MRFS44 044AM
Abstract: 2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a , =5.0mA BVEBO IC=100uA VCE(SAT) IC=100mA, IB=20mA hFE VCE=5.0V, IC=50mA (2N3866 only) hFE VCE=5.0V, IC=50mA (2N3866A only) hFE fT fT Cob GPE VCE=5.0V, IC=360mA VCE=15V, IC=50mA, f=200MHz (2N3866 only) VCE=15V, IC , 3.0 10 45 MHz MHz pF dB % R1 (28-April 2005) Central TM Semiconductor Corp. 2N3866 Central Semiconductor
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200MH 400MH
Abstract: *T min. 500 500 M Hz R.F. performance type number 2N3866 2N4427 f (MHz) V C E , â  bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D , pre-driver stages in v.h.f. and u.h.f. equipment. Q U IC K R E F E R E N C E D A T A 2N3866 Collector-em , values in accordance w ith the A b s o lu te M ax im u m System ( I E C 134) 2N3866 Collector-base , specified 2N3866 Collector cut-off current 2N4427 'C E O 'C E O < < 20 MA 20 p A v -
OCR Scan
t 3866 power transistor transistor 3866 s t 3866 transistor transistor 3866 175MH 550S7
Abstract: 6 * 6 S !ç(mA) r T-33-05 - Collector-base Capacitance. 2N3866-BFR97 32 VC0(V) RF Output Power. I , 30E D â  7^53537 QQ311fl7 b â  \ rz7 SGS-THOMSON ~~ 2N3866 IM@^©[ì|L1CTÌH«[]©S_BFR97 S G S-THOMSON VHF-UHF POWER AMPLIFIER DESCRIPTION The 2N3866 and BFR97 are silicon planar epitaxial NPN , W Tstg, Tj Storage and Junction Temperature - 65 to 200 °C March 1989 1/3 ocn 2N3866-BFR97 * G , 1 kQ Li, U = 5 cm Line (2x5 mm) , U, 1-6 = RF choke 0.1 nH L4 = Ferrite choke 1 mm _ SGS-THÃMSON -
OCR Scan
2N3866-BFR97 TRANSISTOR BFR97 2N3866 SCHEMATIC QQ311 50J-L
Abstract: , HIGH-FREQUENCY TYPES 2N3866, 2N3866A, 2N3866UB, 2N3866AUB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This , -39), figure 2 (surface mount, UB), and figure 3 (die). * 1.3 Maximum ratings. PT TC = (3), 2N3866 , linearly 5.71 mW/°C (2N3866, 2N3866A) and 2.86 mW/°C (2N3866UB, 2N3866AUB) above TA +25°C. TA = Room , mA dc 2N3866 2N3866A 2N3866 2N3866A 2N3866UB 2N3866AUB 2N3866UB 2N3866AUB Min Max 15 200 , : : (eta) Collector efficiency = rf power out x 100 dc power in Pin: Input power Pout: Output power -
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transistor equivalents for 2n3866 clare mercury relay mercury clare 851 clare mercury circulator MHz 2500 relay 3131 MIL-PRF-19500/398F MIL-PRF-19500/398E
Abstract: 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , requirements. Typical Gain-Bandwidth Product versus Collector Current RF Small-Signal Transistors Motorola small-signal and medium power RF transistors with gain-bandwidth products from 1.0 GHz to 8.0 GHz operate with , combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , SELECTION GUIDE 3-66 RF SMALL-SIGNAL TRANSISTORS (continued) UHF and Microwave Oscillators The -
OCR Scan
MRF329 2N3866 MOTOROLA s parameters 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 2N3553 motorola 2N5836 2N5837 MRF511 MRF517 MRF525 2N2857
Abstract: 2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a , V VCE(SAT) hFE IC=100mA, IB=20mA VCE=5.0V, IC=50mA (2N3866) VCE=5.0V, IC=50mA (2N3866A) 10 200 25 200 hFE hFE fT fT VCE=5.0V, IC=360mA VCE=15V, IC=50mA, f=200MHz (2N3866 , ) 2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR Figure 1. 400MHz Test Circuit TO-39 CASE - Central Semiconductor
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15-September
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