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TRF37D73IDSGT Texas Instruments 1 to 6000 MHz 20dB RF Gain Block Amplifier with Powerdown Pin 8-WSON -40 to 85 visit Texas Instruments Buy
TRF37D73IDSGR Texas Instruments 1 to 6000 MHz 20dB RF Gain Block Amplifier with Powerdown Pin 8-WSON -40 to 85 visit Texas Instruments
TPS3103H20DBVRG4 Texas Instruments UltraLow Supply Current, Voltage Supervisory Circuits 6-SOT-23 -40 to 85 visit Texas Instruments
TPS3806J20DBVR Texas Instruments Dual Voltage Detector with Adjustable Hysteresis 6-SOT-23 -40 to 85 visit Texas Instruments Buy
TPS3806J20DBVTG4 Texas Instruments 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6, GREEN, PLASTIC, SOT-23, 6 PIN visit Texas Instruments
TPS3103H20DBVT Texas Instruments UltraLow Supply Current, Voltage Supervisory Circuits 6-SOT-23 -40 to 85 visit Texas Instruments

RF transistor gain 20dB

Catalog Datasheet MFG & Type PDF Document Tags

SiC BJT

Abstract: Transistor BC 457 RF figures of merit reported to date for any SiC bipolar transistor. The calculated maximum , SiC bipolar transistor. 50 µm Fig. 2. Micrographs of a 4-finger RF BJT with , the following formulae [14, 15]: 25 Fig. 3. I-V characteristics of a 4-finger RF transistor. IB , provisions of the copyright laws protecting it. First Demonstration of 4H-SiC RF Bipolar Junction , , University of Colorado, Boulder, CO 80309, USA 2 Abstract - 4H-SiC RF BJTs on a semi-insulating (>105
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LNA SOT23-6

Abstract: MAX2611 -Pin pMAX 8-Pin (jMAX Ultra-low noise, SiGe Ultra-low noise, SiGe Dual LNA, GSM/DCS/PCS, 20dB gain step Dual LNA, GSM/DCS/PCS, 20dB gain step, shutdown OCS/PCS LNA, 20dB gain step, shutdown VCO Buffers , . »»kiyixiyvi Array of Low-Cost RF Building Blocks Wideband Gain Blocks Part Supply Voltage (V) Current (m , ,EW MAX26B1 Supply Voltage (V) Current (m A) RF Frequency (M H z) IF Frequency (M H z) Conversion Gain , Voltage (V) Current (m A) Frequency Range (M H z) Gain (dB) Noise Figure (dB) Input IP3 (dBm) Package
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LNA SOT23-6 MAX2611 AX2232 s0t23 oscillator 6pin AB SOT23-10 MAX2640 MAX2641 AX2651 X2652 900MH 1900MH

022 JRC

Abstract: 3BS transistor . Connection to the supply common is required for proper operation of the gain stage. An external transistor , 'Settling time is specified at a closed loop gain of 10X (20dB). 'Phase margin is specified for a closed loop gain of 10X (20dB). a This Material Copyrighted By Its Respective Manufacturer coniijell corp , , the gain is determined in the conventional sense, by Ri and Rf. Compensation is determined by the , gain levels below 10x, (20dB), input compensation must be used for phase correction. This is shown
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MA-207-CP MA-207 022 JRC 3BS transistor JRC 022 RF transistor gain 20dB 14-PIN 000035M 77777T

T3D 77

Abstract: Ultrasonic amplifier schematic circuit . Connection to the supply common is required for proper operation of the gain stage. An external transistor , (40dB). 'Settling time is specified ata closed loop gain of 10X (20dB). â'¢Phase margin is specified for a closed loop gain of 10X (20dB). J. This Material Copyrighted By Its Respective Manufacturer , In both previous examples, the gain is determined in the conventional sense, by Ri and Rf , shown below. For gain levels below 10X, (20dB), input compensation must be used for phase correction
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T3D 77 Ultrasonic amplifier schematic circuit 10ACL 0D005 mA207 power amplifers schematic 00D0254 2413T17 0D005ES 150MH 100MH

QUALCOMM MSM

Abstract: TA0003 translation, RF and intermediate-frequency (IF) amplification, and automatic gain control (AGC). The chip , nominal gain setting. The RF and LO input-port VSWRs are less than 1.50:1, while the LO output-port VSWR , thirdorder intercept point is +16dBm referenced to 1000. The noise figure is better than 20dB for gain , gain control characteristic is monotonic and linear over the 84dB range. Copyright 1997-2000 RF Micro , and dual-mode (analog/CDMA) handset designs, the engineers at RF Micro Devices (Greensboro, NC), in
RF Micro Devices
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TA0003 QUALCOMM MSM 10MHz 10dBm oscillator gilbert RF9906 RF9908 RF9907 RF9909 QSOP-24

RF POWER TRANSISTOR NPN vhf

Abstract: RF TRANSISTOR isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3122 DESCRIPTION ·High Gain: Gpe= 24dB TYP. @ f= 200MHz ·Low Noise: NF= 2.0dB TYP. @ f= 200MHz APPLICATIONS ·Designed for TV VHF RF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER , Websitewww.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor , INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Websitewww.iscsemi.cn isc RF Product
INCHANGE Semiconductor
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RF POWER TRANSISTOR NPN vhf RF TRANSISTOR high gain low voltage NPN transistor rf amplifier 10mhz vhf high gain transistor RF POWER TRANSISTOR NPN 200MH
Abstract: loop gain of 10X (20dB). â'˜ Phase margin is specified for a closed loop gain of 10X (20dB). V/MSec , are: In both previous examples, the gain is determined in the conventional sense, by Ri and Rf , follower. Connection to the supply common is required for proper operation of the gain stage. An external transistor can be used to gate off the signal at the output. Features 1.5GHz G A IN -B A N D W ID T H PR , gain stage provides all of the voltage gain with a single pole roll-off, up to 30MHz, where a second -
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0DQ0224

MQE9

Abstract: 74674 incorporates two bias circuits for RF LNAs, two first mixers, a second mixer, a programmable gain amplifier , circuits for external RF transistors, whose NF and power gain can be better selected. The HD155121F has , Item LNA transistor bias current Frequency Power gain Noise figure 3rd order input intercept point Mode , HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A (Z) 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular
Hitachi Semiconductor
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MQE9 74674 HITEC 623 Nippon capacitors GSM53 Hitachi DSA002752 D-85622

Hitachi DSA002743

Abstract: Nippon capacitors incorporates two bias circuits for RF LNAs, two first mixers, a second mixer, a programmable gain amplifier , external RF transistors, whose NF and power gain can be better selected. This circuit amplifies the RF , HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems) ADE-207-265 (Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular , (LNA) bias circuit First mixer IF amplifier and second mixer Programmable Gain Amplifier (PGA) IQ
Hitachi Semiconductor
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Hitachi DSA002743

HD155121F

Abstract: Common PCN Handset Specification Phase incorporates two bias circuits for RF LNAs, two first mixers, a second mixer, a programmable gain amplifier , , whose NF and power gain can be better selected. This circuit amplifies the RF signal after selection , - Input (PCN RF) Frequency Power gain Noise figure 3rd order input intercept , 6.5 9.5 12.5 dB RF = 940MHz, LO = 1165MHz, IF = 225MHz PCN Conversion gain 2 Note , HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A (Z) 2nd
Hitachi Semiconductor
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Common PCN Handset Specification Phase GSM LNA 70953 2 way antenna splitter, circuit diagram toko BFP420 GSM ic

49MHz FM transmitter

Abstract: 49MHz FM transceiver terminal of RF amplifier transistor. 55 RFC Amount of amplification can be selected using the resistor load at RF amplifier collector. It is an emitter terminal of RF amplifier transistor. The gain , when emitter of RF AMP is connected to the ground, and voltage gain on 1 Kohm of collector load is Av = 20dB It is a base terminal of RF amplifier transistor. Base of TR is biased internally to about 0.8V , capacitance - Adjustable power amp gain · FM Receiver part - Complete dual conversion circuit with RF
Samsung Electronics
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KA8510 KA8510Q KSC1674Y 49MHz FM transmitter 49MHz FM transceiver 49.86Mhz cordless receiver 49MHz 49mhz transmitter and receiver 2.4 cordless phone Transceiver IC 64-QFP-1420C 46/49MH 455KH

cordless receiver 49MHz

Abstract: 49mhz transmitter and receiver collector It is an em itter terminal of RF am plifier transistor The gain of RF AMP can be adjusted using , Adjustable power amp gain · FM Receiver part - Complete dual conversion circuit with RF amplifier - Excellent , ) amplified at RF AMP is input to this terminal. It is an collector term inal of RF am plifier transistor , connected to the ground, and vol tage gain on 1 Kohm of collector load is Av = 20dB It is a base term inal o f RF am plifier transistor. Base o f TR is biased internally to about 0.8V from the common-emitter
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KA8810 49.86Mhz fm audio circuit 49mhz receiver ka8511Q KA8510/11 KA8511Q 10/1S
Abstract: incorporates two LNA bias circuits for external RF transistors, whose NF and power gain can be better selected , PCN Power gain 960 PCN Frequency â'" 50 â'" ñ Note Input (PCN RF) 1 , 1617MHz, IF = 225MHz Conversion gain 2 1 RF = 1842MHz, LO = 1617MHz, IF = 225MHz GSM â , HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems) HITACHI ADE-207-265 (Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN -
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SL6619

Abstract: "Pager receiver" . This can be caused by inadequate RF decoupling or too much circuit gain near the transistor upper , the gain near the upper frequency of the LNA transistor. On the SL6619 reference pager receiver board , significantly different (usually higher) than that expected from the same gain measurement with the receiver RF , board fitted with the larger dual-loop antenna option, this gain is approximately 20dB in the Elena , matched 50ohm input from a signal generator. Fig. 1(a) and Fig. 1(b) indicate the receiver gain should be
Mitel Semiconductor
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AN4700 323MH
Abstract: . Connection to the supply common is required for proper operation of the gain stage. An external transistor can be used to gate off the signal at the output. The single gain stage provides all of the voltage gain with a single pole roll-off, up to 30MHz, where a second pole is located. .A P P L IC A T IO , (20dB). 'Phase margin is specified for a closed loop gain of 10X (20dB). V/pSec GHz MHz nSecond , ) ACL = Rf /Ri The equations are based on the need to reduce the loop gain by an amount equivalent to -
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0D00353 00003S4

"Pager receiver"

Abstract: SL6619 . This can be caused by inadequate RF decoupling or too much circuit gain near the transistor upper , the gain near the upper frequency of the LNA transistor. On the SL6619 reference pager receiver board , significantly different (usually higher) than that expected from the same gain measurement with the receiver RF , board fitted with the larger dual-loop antenna option, this gain is approximately 20dB in the Elena , matched 50ohm input from a signal generator. Fig. 1(a) and Fig. 1(b) indicate the receiver gain should be
Zarlink Semiconductor
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Abstract: mA pV pV dB V dB 20dB SINAD 12dB SINAD RF input , point. The RF input is a diode-biased transistor with a bias current of typically 300pA. The , otherwise stated): Vcc = 2.5V to 7.5V, Tmb = -30°C to +85°C, IF = 455kHz, RF = 50MHz, Quad Coil Working Q , T â'ž b = 25â' C 40 . 70pA 40 . 70pA dB kHz kohm IF Amplifier Gain Frequency Diff -
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SL6652 100MFIZ

cfw 455 murata

Abstract: CFW 455E Mixer RF input impedance OSC input impedance OSC input bias Mixer gain 3rd order input intercept OSC input level OSC frequency Oscillator Current sink Hfe fT IF Amplifier Gain Frequency Diff , 20 20dB SINAD 12dB SINAD RF input , TRANSISTOR RFC 330p 200k 9 10 +1.2V 1.5k 100n LOAD RESISTOR 14 13 12 220n , ): VCC = 2.5V to 7.5V, Tamb = -30°C to +85°C, IF = 455kHz, RF = 50MHz, Quad Coil Working Q = 30 Value
GEC Plessey Semiconductors
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cfw 455 murata CFW 455E Murata Ceramic Filter RSSI mixer 455 murata filter cfw 455 mp20 transistor DS3285

cfw 455e murata

Abstract: CFW 455E 1.5 5 3 40 1.2 7 2.0 10 1.4 mA µV µV dB V dB 20dB SINAD 12dB SINAD RF input , corresponding reduction of the mixer input intercept point. The RF input is a diode-biased transistor with a , AUDIO OUTPUTS VCC 39k 330p VCC OSCILLATOR TRANSISTOR +15dB (ADJUSTABLE) 100MHz MAX 19 8µA RFC 2k , 2.5V to 7.5V, Tamb = -30°C to +85°C, IF = 455kHz, RF = 50MHz, Quad Coil Working Q = 30 Value Characteristics Min. Overall Supply current Sensitivity AM rejection Vbias Co-channel rejection Mixer RF input
GEC Plessey Semiconductors
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cfw 455e murata murata filter cfW 455 E murata Adjustable 455KHz Ceramic Filter

omni spectra test fixture

Abstract: RF transistor gain 20dB RF Power Field Effect Transistor LDMOS, 800-1000 MHz, 2W, 26V 10/31/03 Preliminary , Vdc, Id = 0.1 A) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) (1) Common Source Amplifier Gain , ) 21 30 RF Power LDMOS Transistor, 800-1000 MHz, 2W, 26V MAPLST0810-002PP 10/31/03 , to 1GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase Flatness Excellent Thermal Stability Performance at 960MHz, 26Vdc Q Average Output Power: 2W min. Q Gain
M/A-COM
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omni spectra test fixture 960MH 26VDC 925MH
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